• Bulletin of the Korean Chemical Society
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• 제31권4호
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• pp.934-940
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• 2010

The reduction of [$Os_3(CO)_{11}P(OMe)_3$] and subsequent ionic coupling of the reduced species with $[Ru({\eta}^5-C_5H_5)(CH_3CN)_3]^+$ resulted in the formation of [$Os_3(CO)_{11}P(OMe)_3(Ru({\eta}^5-C_5H_5))_2$] which can be converted to spiked tetrahedral cluster, [$HOs_3(CO)_{11}P(OMe)_3Ru_2({\eta}^5-C_5H_5)(C_5H_4)$] via the intramolecular hydrogen transfer. Due to the unavailability of a suitable single crystal, the PW91/SDD and LDA/SDD density functional methods were used to predict possible structures and the available spectroscopic information (IR, NMR) of [$Os_3(CO)_{11}P(OMe)_3(Ru({\eta}^5-C_5H_5))_2$]. The most probable geometry found by constrained search is the isomer (a2) in which the phosphite, $P(OMe)_3$, occupies an axial position on one of the two osmium atoms that is edge bridged by the $Ru(CO)_2({\eta}^5-C_5H_5)$ unit. By using the most probably geometry, the predicted infrared frequencies and $^1H$, $^{13}C$ and $^{31}P$ NMR chemical shifts of the compound are in the same range as the experimental values. For this type of complex, the LDA/SDD method is appropriate for IR predictions whereas the OPBE/IGLO-II method is appropriate for NMR predictions. The activation energy and reaction energy of the intramolecular hydrogen transfer coupled with the structural change of the transition metal framework were estimated at the PW91/SDD level to be 110.32 and -0.14 kcal/mol respectively.

• Progress in Superconductivity
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• 제13권3호
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• pp.163-168
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• 2012

The effects of Ta substitution on the superconducting and magnetic properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z(0{\leq}x{\leq}0.5)$ system have been investigated. The X-ray diffraction measurements indicate that the Ta ion replaces Ru sites up to x = 0.4. It is found that the Ta substitution for Ru significantly reduces the weak-ferromagnetic component of the field-cooled magnetic susceptibility without an appreciable change of room temperature thermopower at lower Ta doping level below x = 0.2. The resistive transition temperature tends to decrease monotonically from 27 K for the x = 0 sample to 16 K (9 K) for the x = 0.4 (x = 0.5) sample. These results suggest that superconductivity of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ compound is not significantly affected by the magnetic state of the Ru sublattice. The experimental results are discussed in connection with previous reports on the effects of Nb substitution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.143-144
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• 2005

Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.94.1-94.1
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• 2011

In this work, ordered mesoporous carbons (OMCs) were prepared by the conventional templating method using mesoporous silica (SBA-15) for Pt-Ru catalyst supports in fuel cells. The influence of surface modification on carbon supports on the electrochemical activities of Pt-Ru/OMCs was investigated with different pH. The neutral-treated OMCs (N-OMCs), base-treated OMCs (B-OMCs), and acid-treated OMCs (A-OMCs) were prepared by treating OMCs with 2 M $C_6H_6$, 2 M KOH, and 2 M $H_3PO_4$, respectively. The surface characteristic of the carbon supports were determined X-ray photoelectron spectroscopy (XPS). The electrochemical activities of the Pt-Ru catalysts had been enhanced when the OMCs supports were treated by basic or neutral agents, while the electrochemical activities had been decayed for the A-OMCs supported Pt-Ru.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.205-208
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• 2001

Schottky barrier diodes are fabricated on a intrinsic GaN(4${\mu}{\textrm}{m}$) epitaxial structure grown by rf plasma molecular beam epitaxy (MBE) on sapphire substrates. First, We make Ohmic electrodes (Ti/Al/Ti/Au) by evaporator. Next, we contact RuO$_2$ by dipping in the solution (RuCl$_3$.HClO$_4$), and then we deposit Ni/Au on the surface of RuO$_2$ by evaporator. We study the electrical characteristics of GaN Schottky barrier diodes made by these methods. Measurements are C-V, I-V, SEM, EDX, and XRD for the characteristics of devices. Thickness of RuO$_2$ layer depends on supplied voltage and dipping time. Device of thinner RuO$_2$ layer have a good Schottky characteristics compare with device of thicker RuO$_2$ layer

• 공업화학
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• 제20권5호
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• pp.522-526
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• 2009

다양한 금속(Ru, Mn, Co, Fe)을 $Al_2O_3$와 $CeO_2$에 담지한 촉매를 이용하여 1,2-Dichlorobenzen (1,2-DCB) 제거를 위한 촉매산화 실험을 실시하였다. 이와 더불어 동시에 NOx 제거가 이루어져 단일 촉매층에서 산화/환원 이원 기능이 가능한 촉매를 연구하고자 하였다. 실험결과 1,2-DCB 산화제거효율은 Ru/Co/$Al_2O_3$, Mn-Fe/$CeO_{2}$, 상용촉매인 Cr/$Al_2O_3$ 순으로 나타났다. 또한 1,2-DCB 산화제거효율이 가장 우수하였던 Ru/Co/$Al_2O_3$는 Chlorobenzene (CB)의 분해실험에서도 VOC 제거에 있어서 잘 알려진 Pt-Pd/$Al_2O_3$ 보다 우수한 활성을 나타내었다. 또한 $Cl_2$와 같은 생성물에 의하여 활성의 저하 및 황에 대한 내피독성과 내구성에서 우수한 결과를 얻을 수 있었다. NOx 제거에 있어서도 $260^{\circ}C$에서 NOx 전환율이 70% 정도로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Journal of Photoscience
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• 제7권4호
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• pp.155-159
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• 2000

[Ru(bpy)$_2$(dppz)]$^2$$^{+}$ (bpy = 2,2'-bipyridine, dppz = dipyrido[3,2-a:2',3'-c]phenazine)(RuBD), a long-lifetime metal-ligand complex displays photophysical properties including long lifetime, polarized emission, and very little background fluorescence. To further show the usefulness of this luminophore(RuBD) for probing nucleic acid dynamics, its intensity and anisotropy decays when bound to tRN $A^{val}$ were examined using frequency-domain fluorometry with a blue light-emitting diode(LED)as the modulated light source. Unexpectedly much longer mean lifetime was obtained at 4$^{\circ}C$(<$\tau$>=178.3 ns) as compared to at $25^{\circ}C$(<$\tau$>=117.0 ns), suggesting more favorable conformation of tRN $A^{val}$ for RuBD when intercalated at 4$^{\circ}C$. The anisotropy decay data showed longer rotational correlation times at 4$^{\circ}C$(52.7 and 13.0 ns) than at $25^{\circ}C$ (32.9 and 10.3 ns). The presence of two rotational correlation times suggests that RuBD reveals both local and overall rotational motion of tRN $A^{val}$. Due to long lifetime of RuBD and small size of tRN $A^{val}$, very low steady-state anisotropy values were observed, 0.048 and 0.036 at 4 and $25^{\circ}C$, respectively. However, a clear difference in the modulated anisotropy values was seen between 4 and $25^{\circ}C$. These results indicate that RuBD can be useful for studying hydrodynamics of small nucleic acids such as tRN $A^{val}$.^{val}$.>.$.>.

• Archives of Pharmacal Research
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• 제25권2호
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• pp.143-150
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• 2002

Fluorescent probes bound to DNA typically display nanosecond decay times and reveal only nanosecond motions. We extend the time range of measurable DNA dynamics using $[Ru(pby)_2(dppz)]^{2+}$ (bpy=2.2'-bipyridine, dppz=dipyrido[3,2-a2',3'-c]phenazine) (RuBD) which displays a mean lifetime near 90 ns. To test the usefulness of RuBD as a probe for diffusive processes in calf thymus DNA, we compared the efficiencies of fluorescence resonance energy transfer (FRET) using three donors which display lifetimes near 5 ns for acridine orange (AO), 22 ns for ethidum bromide (EB) and 92 ns for RuBD, with nile blue (NB) as the acceptor. The F rster distances for AO-NB, EB-NB and RuBD-NB donor-acceptor pairs were 42.3, 52.3, and $30.6{\;}{\AA}$, respectively. All three donors showed dramatic decreases in fluorescence intensities and more rapid intensity decays with increasing NB concentrations. The intensity decays of AO and EB in the presence of varying concentrations of NB were satisfactorily described by the one-dimensional FRET model without diffusion (Blumen and Manz, 1979). In the case of the long-lifetime donor RuBD, the experimental phase and modulation somewhat deviated from the recovered values computed from this model. The recovered NB concentrations and FRET efficiencies from the model were slightly larger than the expected values, however, the recovered and expected values did not show a significant difference. Thus, it is suggested that the lifetime of RuBD is too short to measure diffusive processes in calf thymus DNA.

• 한국자기학회지
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• 제17권3호
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• pp.124-127
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• 2007

비정질 $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$층을 갖는 자기터널접합(magnetic tunneling junctions; MTJ)를 연구하였다. 비정질 자유층이 MTJ의 스위칭 특성에 미치는 영향을 중점적으로 이해하기 위하여 기존의 사용된 CoFe 그리고 NiFe층들을 대신하여 비정질 강자성체 CoFeSiB을 사용하였다. CoFeSiB은 CoFe과 NiFe보다 각각 낮은 포화자기장($M_s:\;560\;emu/cm^3$)과 높은 자기이방성 상수($K_u:\;0.2800\;erg/cm^3$)를 갖는다. CoFeSiB층들의 사이에 1.0 nm Ru층 삽입시 $-0.003\;erg/cm^3$ 교환결합에너지($J_{ex}$)를 나타내었다. $Si-SiO_2-Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 또는 CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60(in nm) MTJ 구조의 터널접합에 대하여 실험 및 시뮬레이션 결과를 통하여 낮은 $J_{ex}$에 기인하는 스위칭 자기장(switching field; $H_{sw}$)의 시료 크기 의존성이 나타나는 것을 알 수 있었다. CoFeSiB 합성형 반강자성 구조는 micrometer뿐만 아니라 submicrometer 시료 크기영역에서도 보자력($H_c$)의 감소와 민감도를 증가 시킴으로써 자기 스위칭 특성에 유리한 것으로 확인 되었다.