• Bulletin of the Korean Chemical Society
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• v.19 no.10
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• pp.1084-1090
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• 1998

The oxidation of triphenylphosphine by [(tpy)(phen)RuⅣ(O)]2+ and [(bpy)(p-tert-butylpy)RuⅣ(0)]2+ (tpy is 2,2': 6',2"-terpyridine, phen is 1,10-phenanthroline, bpy is 2,2'-bipyridine, and p-tert-butylpy is para-tertbutylpyridine) in CH3CN has been studied. Experiments using 18O-labeled complex show the oxyl group transfer from [RuⅣ=O]2+ to triphenylphosphine occured quantitatively within experimental error. Kinetic data were fit to a second-order for [RuⅣ=O]2+ and [PPh3]. The initial product, [RuⅡ-OPPh3]2+, was formed as an observable intermediate and then underwent slow solvolysis. The reaction proceeded as endothermic in activation enthalpy and a decrease in activation entropy. The oxidative reactivity of four representative ruthenium mono-oxo oxidants against triphenylphosphine was compared. These systems have been utilized as electrochemical oxidative catalysts.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• Analytical Science and Technology
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• v.19 no.5
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• pp.422-432
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• 2006

The volatile organic compounds(VOCs) have been recognized as a major contributor to air pollution. The catalytic oxidation is one of the most important processes for VOCs destruction due to getting high efficiency at low temperature. In this study, monometallic Pt and bimetallic Pt-Ru, Pt-Ir were supported to ${\gamma}-Al_2O_3$. Xylene, toluene and MEK were used as reactants. The monometallic or bimetallic catalysts were prepared by the excess wetness impregnation method and were characterized by XRD, XPS, TEM and BET analysis. As a result, Pt-Ru, Pt-Ir bimetallic catalysts showed higher conversion than Pt monometallic catalyst. Pt-Ir bimetallic catalyst showed the highest conversion on the ${\gamma}-Al_2O_3$ support. In the VOCs oxidation, Pt-Ru, Pt-Ir bimetallic catalyst had multipoint active sites, so it improved the range of Pt metal state. Therefore, bimetallic catalysts showed higher conversion of VOCs than monometallic ones. In this study, the use of small amount of Ru, Ir to Pt promoted oxidation conversion of VOCs.

• Journal of Radiation Protection and Research
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• v.8 no.1
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• pp.15-25
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• 1983

The sequential separation of Ru-103, Cs-137 and Ce-144 was carried out by organic cation exchanger, Amberite CG-120, and inorganic ion exchangers, silica gel and montmorillonite. The optimum conditions of Ru-103, Cs-137 and Ce-144 on Amberite CG-120 are 0.01M-, 0.01M- and 0.1IM- hydrochloric acid for the adsorption, and 3M-, 3M- and 5M-hydrochloric acid for the desorption, respectively. The optimum conditions of Ru-103, Cs-137 and Ce-144 on silica gel are pH 8, pH 8 and pH 8 for the adsorption. and 3M-, 1M- and 1M-hydrochloric acid for the desorption. respectively. The optimum conditions of Ru-103, Cs-137 and Ce-144 on montmorillonite are pH 8, 0.01M-hydrochloric acid and pH 4 for the adsorption, and 1M-, 5M- and 3M-hydrochloric acid for the desorption. respectively. The adsorption which occurs at lower ionic strength and the differences in desorption ionic strength are utilized for the separation of tracer mixture in continuous experiments. The individual separation of Ru-103, Cs-137 and Ce-144 can be carried out more efficiently with montmorillonite than with silica gel and Amberite CG-120.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1021-1026
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• 1997

RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.271-275
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• 2019

Anodic $TiO_2$ nanotubes were simultaneously grown and doped with $RuO_2$ by single-step anodization in a negatively-charged $RuO_4{^-}$ precursor. Subsequently, a high positive voltage was imposed on the nanotubes in an $F^-$-based electrolyte (a process referred to as potential shock), which led to the formation of a through-hole $RuO_2$-doped $TiO_2$ nanotube membrane without significant loss of the $RuO_2$ catalyst. XPS results confirmed that the doped Ru metal was converted into $RuO_2$ as the potential shock voltage increased. Further increases in the potential shock voltage led to the formation of $RuO_x/Ru$ in the $TiO_2$ nanotubes. All of our results clearly showed that a through-hole catalyst-doped $TiO_2$ nanotube membrane can be produced by a sequence consisting of single-step anodization and the potential shock process.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.237-243
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• 1999

스크린 프린팅법을 이용하여 NOX 감지용 WO3 후막형 가스센서를 제조하였다. 본 실험에서는 감지막의 소성 온도에따른 감도변화 및 Ru을 첨가함으로써 감도의 증진을 중점적으로 조사하였다. 또한 NO2 50 ppm하에서 CO, H2, CH4 그리고 i-C4H10등의 가스에 대하여 cross sensitivity를 조사하였다. WO3 가스센서는 소성온도 50$0^{\circ}C$, 작동온도 30$0^{\circ}C$에서 최대감도를 얻었다. 순수한 WO3에 Ru(0.004 wt%)을 첨가시 NO2 및 NO 가스에 대한 감도가 크게 증진되었다. 그러나 순수한 WO3 센서는 Ru(0.004 wt%)이 첨가된 WO3 센서보다 더 우수한 cross sensitivity를 보였다.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.652-657
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• 1990

Primary amines react with 1,6-hexanediol at 180$^{\circ}C$ for 5 h under argon atmosphere in the presence of both $RuCl_3{\cdot}3H_2$O and $PR_3$ to give N-substituted perhydroazepine derivatives in good yields. For aromatic amines such as anilines, $RuCl_3{\cdot}3H_2$O combined with $PPh_3$ showed the highest catalytic activity. On the other hand, in the reaction of aliphatic amines, $RuCl_3{\cdot}3H_2$O combined with $PBu_3$ showed the highest catalytic activity. These differences may be attributed to the difference in the basicity of these amines. Less basic aromatic amines may require less basic phosphines, while more basic aliphatic amines may require more basic phosphines as the ligands.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.84-90
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• 1992

The dependence of electrical characteristics of RuO$_2$-based thick film resistors on the RuO$_2$ contents, glass composition variation and the firing temperatures was measured. The sheet resistance of resistors decreased as the contents of RuO$_2$ increased and at firing temperatures higher than C, the sheet resistance increased as the firing temperature increased. In case of using lead borosilicate glass-containing $Bi_{2}O_{3}$, the sheet resistance decreased as the contents of $Bi_{2}O_{3}$ increased. TCR changes from negative to positive values as RuO$_2$ contents increased and from positive to negative values as the firing temperature increased. TCR increased to positive values as $Bi_{2}O_{3}$ increased in the glass.