• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.44-44
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• 2011

현존하는 초경도 박막물질 중 입방정 질화붕소(cBN)은 철계 금속과의 반응안정성 및 낮은 온도에서의 합성가능성 등 많은 장점을 가지고 있다. 그러나 필수로 수반되는 이온충돌 효과로 인해 박막 내 높은 잔류응력으로 인한 박리 현상으로 응용이 어려운 실정에 있다. 현재까지 이를 개선하기 위해 수소를 첨가하여 박막의 잔류응력을 줄이는 연구, B4C 타겟을 이용하여 B-C-N 의 gradient layer를 설계하여 점진적으로 잔류응력을 감소시키는 연구 등 많은 연구들이 진행되고 있다. 본 연구에서는 MOCVD로 만들어진 NCD(Nano Crystalline Diamond) buffer layer 위에 RF-UBM(unbalanced magnetron) PVD를 이용하여 BN을 증착시켰다. hBN 타겟을 이용하여 2mTorr에서 400W 의 RF 파워를 사용하여 기판에 RF bias를 인가해 실험하였다. cBN 박막과 기판의 lattice mismatch 를 줄이기 위해서 본 연구소에서 제공되는 NCD 기판을 사용하였으며, 다이아몬드 기판과 cBN 박막의 1:1 에피성장을 이루기 위해 상온에서부터 800도까지 온도 변화를 주어 cBN을 증착시켰다. FTIR(Fourier transform infrared spectroscopy)로 $sp^2$구조인 hBN과 $sp^3$구조인 cBN의 성장유무를 확인하였으며, FTIR peak intensity 차이로 박막내 cBN의 함량을 계산하였고, Scratch test로 박막과 기판사이의 밀착력을 상대적으로 비교하였으며, 격자의 에픽성장을 확인하기 위해 FIB 의 작업을 거쳐 HRTEM 으로 각 위치별로 SAD pattern를 이용하여 성장거동을 확인하였다.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.357-360
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• 2011

N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.596-602
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD)radio frequency plasma-assisted chemical vapor deposition). In order to increased the nucleation density, the WC-Co substrate was polished with 3${\mu}m$ diamond paste. And the WC-Co substrate was preatreated in $HNO_3\;:\;H_2O$ = 1:1 and $O_2$ plasma. In $H_2-CH_4$ gas mixture, the crystallinity of thin film increased with decreasing $CH_4$ concentration at 800W discharge power and 20torr reaction pressure. In $H_2-CH_4-O_2$ gas mixture, the crystallinity of thin film increased with increasing $O_2$ concentration at 800W discharge power, 200torr reaction pressure and 4% $CH_4$ concentration.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.147-147
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• 2010

태양전지의 효율 향상을 위해 웨이퍼 표면에 반사방지막 코팅을 위한 패시베이션 물질들에 대한 연구가 활발히 진행 되고 있다. 이 과정에서 널리 사용하는 ARC 물질로 SiNx 박막이 있다. SiNx 박막은 PECVD 법으로 저온에서 실리콘 기판 위에 증착 가능한 장점이 있다. 플라즈마 분위기 가스로 아르곤 또는 질소 사용하며 SiNx 박막의 광학적, 전기적인 특성은 화학적 조성비에 의해 결정되며 증착온도 가변에 박막의 특성이 변화하며 이를 이용하여 태양전지의 효율을 향상 시킬 수 있다. 본 연구에서는 SiNx 박막을 형성하는데 질소 가스 분위기에서 PECVD를 이용하여 증착하고 그 특성을 분석하였다. 박막은 0.8 Torr의 압력에서 $150^{\circ}C\;{\sim}\;450^{\circ}C$의 기판온도로 증착되었으며 이때의 RF power은 100W ~ 300W로 가변 되었다. 증착된 박막은 1.94 에서 2.23의 폭넓은 굴절률 값을 가지고 있었다. $SiH^4/NH_3$ 가스 비의 증가에 따라 박막 두께와 굴절률이 감소함을 확인할 수 있었다.증착된 SiNx 박막의 소수반송자 수명 측정 결과 굴절률 2.23인 박막의 경우 약 87 us의 수명을 나타냈으며, 굴절률이 1.94로 줄어듦에 따라 소수 반송자 수명 역시 79 us로 감소하였다. SiNx 박막은 n-rich 보다 Si-rich 인 경우 effective 반송자 수명을 증가시켜 표면 재결합 속도를 줄이는데 유용함을 확인하였다. 또한 증착온도가 증가할수록, RF power가 증가 할수록 소수 반송자 수명 역시 증가하였다. 반사도의 경우 $SiH_4$의 비율이 증가할수록 반사도가 감소함을 확인 하였으며, 증착온도 증가에 따라, RF power 증가에 따라 반사도가 감소하였다. 결과적으로 $450^{\circ}C$의 기판온도와 300W의 RF power에서 증착된 SiNx 박막의 경우 가장 우수한 전기적, 광학적 특성을 보여주었다.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.397-402
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• 1998

$SiO_2$ etch characteristics were studied as a function of the basic parameters, such as the main RF power and the operating pressure in a helicon plasma. $SiO_2$ etch characteristics were improved as the main RF power was increased and the operating pressure was decreased. $SiO_2$ etch selectivity over silicon increased from 2.9 to 25.33 when the RF input power increased from 300 W to 2 kW and from 2.3 to 16.21 when the operating pressure decreased from 10 mTorr to 1.5 mTorr with $C_4F_8$ plasma. We used a quadrupole mass spectrometer to measure the relative abundancies of various ionic and radical species to explain the experimental results and found that when the operating pressure is low and the RF input power is high, the highly selective $SiO_2$ etch is achieved as a result of density increment of the densities of various ionic species.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.250-254
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• 2003

A film bulk acoustic resonator (FBAR) device for 2 GHz radio frequency (RF) bandpass filter application is presented. This FBAR device consists of an aluminum nitride (AlN) film sandwiched between top(Al) and bottom(Au) electrodes and an acoustic multilayer reflector of a silicon dioxide/tungsten (SiO2/W). The A/N film deposited using a RF sputtering was observed to have small columnar grains with a strongly preferred orientation towards c axis. In addition to a high quality factor (4300), a large return loss of 37.19 dB was obtained.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.1A
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• pp.48-57
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• 2006

TWTA is to perform the function that amplifies the input RF signal and outputs it to the antenna. This paper proposes a method that is to improve the cathode ripple or the SHF TWTA for satellite communications. Through the embodiment and experiment of 600W SHF TWTA, this method satisfies the design specifications. Also, RF performance is improved by reducing the noise of auxiliary power sources supplied to the RF part and eliminating the unexpected noise. Therefore, this method is very effective and can be used to develop the similar equipments.

• Journal of Ginseng Research
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• v.21 no.1
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• pp.13-18
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• 1997

Identification and changes of physiologically active substances during chilling storage of dehisced ginseng (Panax ginseng C. A. Meyer) seeds were analyzed using various preparatory separation methods and purification columns; Dowex 50W and silica gel columns. Seven components with Rf values of 0.20, 0.40, 0.58, 0.66, and 0.70 In solvent system, $CHCl_3$:MeOH=3:1 (v/v), Rf values of 0. 63 and 0.74 in solvent system, $CHCl_3$:MeOH:$H_2O$:=7:3:1 (v/v) were obtained through Dowex 50W and silica gel column chromatographies. Two components with Rf values of 0.20 and 0.63 in the all chilling treatments were detected in the extract obtained through both chromatographies, and only the former component was gradually increased till 4 weeks of chilling storage and then rapidly decreased from 8 to 16 weeks. UV spectra of Rf values of 0.66 and 0.56 were similar to that of cytokinin, but their physiological activities were not found. Rf values of 0.20 showed activity by radish cotyledon expansion bioassay. The component with Rf value of 0.20 was revealed to have a naphthalene in the proposed chemical structure by various NMR techniques.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.