• Magazine of the Korean Society of Agricultural Engineers
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• v.15 no.1
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• pp.2853-2877
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• 1973

Models of cross-sections and channels were made in order to measure seepage losses. Cross-sections were made of sand, sandy clay loam and loam, their thicknesses being 30cm and 40cm, respectively. Flow depths kept in the cross-sections were 4cm, 6cm, 8cm and 10cm. Straight and curved channel models were provided so as to measure seepage losses, when constant water depths maintained at the heads of the channels were 7.3cm and 5.7cm, respectively. The results obtained in this experiment are presented as follows: 1) A cumulative seepage loss per unit length at a point in the channel varies in accordance with time and flow depth. The general equation of cumulative seepage loss may be as follows(Ref. to Table V.25): $$q_{cum}=\int_{o}^aq(a)dt+\int_a^bq(b)dt+\int_b^tq(c)dt$$ 2) In case that the variation of water depth through the channel is slight, the total seepage loss may be computed by applying the following general equation: $$\={q}_{cum}{\cdot}x=\int_o^tq_{cum}\frac{{\partial}x}{{\partial}t}dt$$ 3) Because seepage loss varies considerably according to water depth in case that the variation of flow depth through the channel is great, seepage loss should be computed by taking account of the change of flow depth. 4) The relation between time and traveling distance of water flow may be presented as the following general equation(Ref. to Table V.29): $$x=pt^r$$ 5) The ratios of the seepage losses of the straight channel to the curved channel are 1:1.03 for a flow depth of 7.3cm and 1:1.068 for that of 5.7cm. 6) The ratios of the seepage losses occurring through the bottom to those through the inclined plane in the channel cross-section are 1:2.24 for a water depth of 8cm and 1:2.47 for a depth of 10cm in case that soil-layer is 30cm in thickness. Similarly, those ratios are 1:2.62 and 1:2.93 in case of a soil-layer thickness of 40cm(Ref. to Table V.5).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.88-88
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• 2009

$BiFeO_3$(BFO), when forming a solid solution with $BaTiO_3$(BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.7BFO-0.3BTO thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $600^{\circ}C$ and an oxygen partial pressure of 10mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with. the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron. microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.313-313
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• 2010

$BiFeO_3$ (BFO), when forming a solid solution with $BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.8 BFO-0.2 BTO thin films on Pt(111)/$TiO_2/SiO_2$/Si substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $700^{\circ}C$ and an oxygen partial pressure of 10mTorr and 330mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower and higher oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.206-206
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• 2010

정보화 기술이 급속히 발전함에 따라서 보다 많은 양의 data를 전송, 처리, 저장 하게 되면서 이를 처리 할 수 있는 대용량, 고속, 비휘발성의 차세대 메모리의 개발이 요구 되고 있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Off state)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을 가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time이 $10^5$배 이상 빠르며, 2~5V 이하의 낮은 전압에서 동작이 가능하다. 또한 구조가 간단하여 공정상의 결함을 현저히 줄일 수 있다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 저항 변화의 특징을 잘 나타내는 물질에는 $TiO_2$, $Al_2O_3$, $NiO_2$, $HfO_2$, $ZrO_2$등의 많은 전이금속산화물들이 있다. 본 연구에서는 Reactive DC-magnetron Sputtering 방법과 DC-magnetron sputter를 이용하여 Ti를 증착한 후 Oxidation 방법으로 각각 증착한 $TiO_2$박막을 사용하여 저항변화특성을 관찰하였다. $TiO_2$상부에 Atomic Layer Deposition (ALD)를 이용하여 $HfO_2$ 박막을 증착하여 표면처리를 하고, 또한 $TiO_2$에 다른 전이 금속박막 층을 추가 증착하여 저항변화 특성에 접합한 조건을 찾는 연구를 진행하였다. 하부 전극과 상부 전극 물질로는 Si 100 wafer 위에 Pt 또는 TiN을 사용하였다. 저항변화 특성을 평가하기 위해 Agilent E5270B를 이용하여 current-voltage (I-V)를 측정하였다. X-ray Diffraction (XRD)를 이용하여 증착 된 전기금속 박막 물질의 결정성을 관찰했으며, Atomic Force Microscopy (AFM)을 이용하여 증착 된 샘플의 표면을 관찰했다. SEM과 TEM을 통해서는 sample의 미세구조를 확인 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.190-190
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• 2008

자연적으로 발생되는 파도, 비, 우박 등과 철도, 차량 및 엘리베이터 등과 같은 인위적인 설치, 이동에 의해 발생되는 진동에너지는 우리 일상생활에서 가장 흔하게 발생할 수 있는 에너지원인데, 이러한 진동에너지는 압전 소재를 이용하여 재생 가능하여 최근에는 이에 대한 연구가 활발히 진행되어 왔다. 예를 들면, 미국의 MIT에서는 인간이 걸을 때 신발에 가해지는 압력을 이용하여 전력을 발생시키는 연구를 진행하여 2.9 mW의 전력을 얻었다. 특히 이러한 기술은 인간의 걷기 운동 등과 같은 일상적인 동작으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수가 있어서, 소형 전자기기 등에 서 기존 이차전지를 대체 또는 보완 할 수 있는 기술로 검토되고 있다. PZT계 세라믹스는 높은 유전상수와 우수한 압전특성으로 이러한 압전발전 분야에서 가장 널리 사용되어지고 있다. 하지만 에너지 효율을 높이기 위하여 적층 구조의 제작 시 구조적 특성상 내부전극이 도포된 상태에서 동시 소결이 필요한데, $1000^{\circ}C$ 이상의 높은 소결온도 때문에 소재 원가가 낮은 Ag전극 대신 값비싼 Pd나 pt가 다량 함유된 Ag/Pd, Ag/Pt 전극이 사용되고 있어 경제성이 떨어지는 단점을 갖게 된다. 순수 Ag 전극을 사용하거나 Ag의 비율이 높은 내부전극을 사용하기 위해서는 $900^{\circ}C$ 이하에서 소결되고 우수한 전기적 특성을 보이는 압전 세라믹스 소재를 개발 하는 것이 필요하다. 따라서 본 연구에서는 압전특성이 우수한 $(Pb_{1-x}Cd_x)(Ni_{1/3}Nb_{2/3})_{0.25}(Zr_{0.35}/Ti_{0.4})O_3$ 계의 조성을 설계하고, 소결온도를 낮추기 위해서 2 단계 하소법을 이용하였다. 또한 $MnCO_3$, $SiO_2$, $Pb_3O_4$ 등을 소랑 첨가하여 액상 소걸 특성을 부여하여 소결 온도를 감소시키려는 시도도 하였다. 소결체의 전체적인 제조 공정은 일반적인 벌크 세라믹의 소걸 공정을 따랐다. 최종 소결된 시편을 XRD분석을 통하여 상을 확인하였고 SEM을 이용하여 미세조직을 관찰 하였다. 전기적 특성을 평가하기 위하여 두께를 1mm로 연마한 시편에 Ag 전극을 도포하여 $650^{\circ}C$ 에서 열처리한 후, 분극처리 하였다. Impedance analyzer를 이용하여 압전 특성 (전기기계결합계수 및 기계적품질계수)을 측정 하였고, 압전전하상수는 $d_{33}$-meter로 측정하였다. 본 연구에서는 압전체에 가해지는 하중의 크기, 시편의 크기, 하중을 가하는 방법, 에너지 저장회로의 최적화 등을 다양하게 시도하면서 에너지 변환 및 저장 효율을 평가하였다.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.202-209
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• 2005

Phase evolution, microstructure and the electrical properties such as $k_p$ and $Q_m$ of $Pb(Mg_{1/3}Nb_{2/3})O_3[PMN]-Pb(Mn_{1/3}Nb_{2/3})O3[PM'N]-PbZrO_3[PZ]-PbTiO_3[PT]$ quaternary system were investigated within the compositional ranges $0{\leq}y{\leq}0.125$, y+z=0.125, and $0.39{\leq}x{\leq}0.54$ of the formula $Pb_{0.97}Sr_{0.03}[Mg_{1/3}Nb_{2/3})_y\;(Mn_{1/3}Nb_{2/3})_z\;(Zr_{x}Ti_{1-x})_{1-(y+z)}]O_3$. In the case of increasing Mn/(Mg+Mn) ratio for a fixed Zr/Ti ratio of 47.5/52.5, phase relation remained unchanged but the grain size drastically decreased, and the electrical properties changed as following: both $k_P$ and $Q_m$ reached the peak values at $Mn/(Mg+Mn)\cong0.3l7$ and gradually decreased; $\varepsilon33^T$ showed a monotonic decrease; P-E hysteresis loop gradually changed to asymmetrical one, and $E_i$ increased in correspondence. With increasing Zr/Ti ratio for a fixed Mn/(Mg+Mn) ratio of 0.317, on the contrary, the cell parameter $(\alpha^2c)^{1/3}$ gradually increased, and tetragonal-rhombohedral morphotropic phase boundary appeared in the range of $51/49{\leq}Zr/Ti{\leq}54/46$. the meantime, the grain size substantially increased, and the electrical properties changed as following: $k_P$ and $\varepsilon33^T$ reached peak values at Zr/Ti=51/49 and 48/52, respectively, and then gradually decreased; change of $Q_m$ was adverse to $k_P$; both $E_C\;and\;E_i$ considerably decreased while $P_S$ moderately increased. For the system 0.125(PMN+PM'N)-0.875PZT studied, the composition Mn/(Mg+Mn)=0.3l7 and Zr/Ti=51/49 revealed some promising electrical properties for piezoelectric transformer application such as $k_P=0.58,\;Q_m\cong1000$, and $\varepsilon^T_{33}=970$, as well as dense and fine-grained microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.168-171
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• 2003

Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.43-47
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• 2003

Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.