• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.29-34
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• 2009

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.764-769
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• 2002

The effect of excess Bi contents on the ferroelectric properties of B $i_{3.25}$ L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) thin films has been investigated. Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/ $SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10% excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of 326 and dielectric loss of 0.024. The BLT thin films showed little polarization fatigue test up to 3.5$\times$10$^{9}$ bipolar switching cycling.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.265-271
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• 2003

Ferroelectric lanthanum-substituted Bi$_4$Ti$_3$O$_{12}$(BLT) thin films were fabricated by spin-coating onto a Pt/Ti/SiO$_2$/Si substrate by metalorganic decomposition technique. The grain size in BLT thin films were prepared with controlled by various drying process. The effect of grain size on the crystallization and ferroelectric properties were investigated by x-ray diffraction and field emission scanning electron microscope. The dependence of crystallization and electrical properties are related to the grain size in BLT thin films with different drying temperature. The remanent polarization of BLT thin film increases with the increasing grain size. The value of 2P$_{r}$ and E$_{c}$ of BLT thin film dried at 45$0^{\circ}C$ were 25.9 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm, respectively. The BLT thin film with larger grain size has better fatigue properties. The fatigue properties revealed that small grained film showed more degradation of switching charge than large grained films.lms.s.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.163-168
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• 2003

In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of $0.2Pb(Mg_{1/3}Nb_{2/3)O_3-0.38PbZrO_3-0,42PbTiO_3$ followed by lamination and burnout & co-firing processes. The actuators of $10\times10\times0.6~2\textrm{mm}^3$ in size were formed in a way that $60 ~ 200\mu\textrm{m}$ thick were stacked alternatively with $5\mu\textrm{m}$ thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of $90^{\circ}$/$180^{\circ}$ domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.23-25
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• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

• 한국독어학회지:독어학
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• 제2집
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• pp.75-100
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• 2000

Das Ziel dieses Aufsatzes ist es, dass wir aile seit Lakoff(1965) als inchoative Verben angenommenen Konstruktionen aus Adjektiv + werden bzw. die dazu synonymen Verben nicht mehr unter eine Kategorie 'Inchoativ' subsumieren, und diese Konstruktionen mutatives(werden + dick), ingressives(werden + krank) und duratives Verb(werden + dicker) untergliedern, und $schlie{\ss}lich$ auf Grund dieser Analyse Vendlers 4 Situationstypen Zustand, Prozess, Accomplishmen und Achievement noch deutlicher spezifizieren. Mutative Verben sind rechtsbegrenzte Prozessverben, ingressive Verben linksbegrenzte Zustandsverben, und durative Verben nichtbegrenzte Prozessverben. In mutativen und durativen Verben wird der Vorgang als Kontinuum aufgefasst, und in ingressiven Verben wird der Vorgang als diskontinuierliche Aufeinanderfolge zweler $Zust\"{a}nde.\;\"{U}brigens$ haben mutative Verben obligatolisch Prozesscharakter und der Prozess bewirkt $Zustandsver\"{a}nderung$. Ingressive Verben haben nicht $prim\"{a}r$ Prozesscharakter, und $m\"{o}glicher$ Prozess $verl\"{a}uft$ innerhalb emes Zustandes. Es gibt also $gen\"{u}gend$ Motivation $daf\"{u}r$, werden bei allen drei Klassen in einheitlicher Weise zu beschreiben. Nach $g\"{a}ngiger$ Auffassung ist die Semantische Form(SF) von werden vom semantisch unmarkierten sein durch das telische $Pt\"{a}dikat\;_{BECOME}$ unterschieden. In diesem Aufsatz $ersetzt_{CHANGE}\;das\;Pradikat\;_{BECOME;}$ die Bedeutung von $von\;_{BECOME}$ ist eine der $m\"{o}glichen kontextabh\"{a}ngigen$ semantischen Anreicherungen $von\;_{CHANGE.\;CHANGE}$ ist unterbestimmt $bez\"{u}glich\;Telizit\"{a}t$ und Prozesshaftigkeit. $_{CHANGE}[P(X)]$ ist die Basis­bedeutungskomponente von werden in allen adjektivischen werden­Konstruktionen. Mit Hilfe von $Pr\"{a}dikaten\;_{CHANGE,\;TARG},\;und\;_{ATOM}$ bekommen wir die Beschreibung von $Markiertheitsverh\"{a}Itnissen$ zwischen den Situations­typen, die mit nur zwei semantischen Klassifizierungskomponenten(${\pm}Prozess,\;{\pm}Become$) nicht darzustellen sind. Veranderungssituationen sind $Nicht-Zust\"{a}nde$, markiert durch das $Pt\"{a}dikat\;_{CHANGE}.\;Ver\"{a}nderungs­situationen$ mit einem Ziel(TARG) sind Ereignisse. Eine Veranderung ohne Begrenzung ist ein Prozess. Achievements sind $atomare(_{ATOM})\;Ereignisse(_{TARG})$. Accomplishments sind durch TARG hinreichend charakterisiert, d.h. eine $zielbezogene(_{TARG})$ Veranderung, die nicht als $atomar(_{-ATOM})$ gekennzeichnet ist, ist ein Accomplishment.

• 한국결정학회지
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• 제11권1호
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• pp.22-27
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• 2000

The structure of cis-(malonato)[(4R,5R)-4,5-bis(aminomethyl)-2-isopropyl-1,3-dioxolane]platinum(II) with a potent anticancer activity has been determined by the X-ray crystallographic method. Crystal data are as follows: Pt(C/sub 11/H/sub 20/N₂O/sub 6/), M/sub 4/=471.38, monoclinic, P2₁, a=7.112(1), b=33.615(3), c=7.135(1)Å, β=116.80(1)°, V=1522.6(3)Å, and Z=4. The two independent molecules with very similar structures are approximately related by pseudo two-fold screw axis symmetry, which makes the monolinic cell look like the orthorhombic cell with one molecule in the asymmetric unit and space group C222₁. The crystal packing mode is similar to that of the analogue with the dimethyl substituents instead of the isopropyl group. The Pt atom is coordinate to two O and two N atoms in a square planar structure. The six-membered chelate ring in the leaving ligand assumes a conformation intermediate between the half chair and the boat forms. The seven-membered ring in the carrier ligand assumes a twist-chair conformation and the oxolane ring assumes an envelope conformation. Crystal packing consists of the extensive hydrogen-bonding network in the two-dimensional molecular layers and weak van der Waals interactions between these layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.177-180
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• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

• 한국인터넷방송통신학회논문지
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• 제12권1호
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• pp.245-248
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• 2012

본 논문에서는 실리콘 기반의 기술과 차별화하여 저온동시소성세라믹 (LTCC) 기판을 이용하여 대표적 압전물질인 PZT 박막의 최적의 증착조건을 연구하였다. LTCC 기술은 실리콘 기반의 기술에 비하여 낮은 생산 단가, 높은 수율, 3차원 구조물의 용이한 제작성 등으로 인하여 센서 및 액추에이터와 같은 10 um ~ 수백 um 정도의 중규모 디바이스를 제작하는데 있어서 중요한 역할을 담당하고 있다. LTCC 기판은 NEG사의 MLS 22C 상용 파우더를 이용하여 100 um 두께의 그린쉬트를 적층하고 동시소결하여 400 um 두께로 제작하였다. 제작한 기판위에 Pt/Ti 하부전극을 증착하고 RF 마그네트론 스퍼터링 방법을 이용하여 PZT 박막의 증착조건을 연구하였다. 증착조건으로는 RF 전력과 아르곤과 산소 가스비를 가변하여 실시하였으며, XRD와 EDS를 사용하여 박막의 결정성 및 성분을 분석하였다. 실험을 통하여 얻어진 최적의 증착조건은 RF 전력 125W, 아르곤과 산소비 15:5에서 가장 우수한 특성을 나타내는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.171-171
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• 2010

In this work, we investigated the effect of the oxidation temperature on the unipolar and bipolar resistance switching behaviors of the oxidized TiO-x films. TiOx films on Pt electrodes were fabricated by the oxidation of Ti films at $550^{\circ}C$ for 1 to 3 hours. The unipolar and bipolar resistance switching properties were investigated with the oxidation temperature and time. Also, the crystal structure and the physical properties such as chemical bonding states of TiOx layers were characterized in addition to the resistance switching characteristics. The resistance switching behaviors of TiOx films oxidized at above $450^{\circ}C$ and below $650^{\circ}C$ was shown. So, we investigated that the resistance switching behaviors of TiOx films oxidized at $550^{\circ}C$ with the oxidation time from 1 to 3 hour. The memory windows of unipolar switching in the oxidized TiOx films were reduced with increasing the oxidation time, but those of the bipolar switching were slightly enlarged. The enlargement of rutile TiO2 peak with increasing the oxidation time and temperature was studied by X-ray diffraction. An increase of non-lattice oxygen and Ti3+ in the TiOx films with the oxidation times was investigated by X-ray photoemission spectroscopy. It was expected that the uipolar and bipolar resistive switching of the oxidized TiOx film was strongly related with the migration of non-lattice oxygen anions and schottky barrier height, respectively.