• 제목/요약/키워드: $Pr_6O_{11}$ -based ZnO varistors

검색결과 53건 처리시간 0.021초

소결시간에 따른 ZnO-Pr6O11계 바리스터의 전기적, 유전적 특성 (Electrical and Dielectric Properties of ZnO-Pr6O11 Varistors with Sintering Time)

  • 남춘우;박종아;유대훈
    • 한국전기전자재료학회논문지
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    • 제18권6호
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    • pp.543-549
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    • 2005
  • The electrical and dielectric properties of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-based$ varistors were investigated in the sintering time range of $1\~3$ h. Increasing sintering time improved the densification of ceramics, whereas deteriorated the nonlinearity, in which the nonlinear exponent greatly decreased from 55.3 to 38.2 and the leakage current increased from 0.1 to $1.1\;{\mu}A$. The donor concentration and density of interface states increased in the range of $(1.06\~1.60)\times10^8/cm^3\;and\;(3.15\~3.67)\times10^{12}/cm^2$ with increasing sintering time, respectively. while, in dielectric properties, the increase of sintering time increased in the range of $0.0228\~0.0505$ in tans and $1.32\~1.36\;{\mu}s$ in relaxation time.

$Y_2O_3$ 첨가에 따른 ZnO:Pr 바리스터의 미세구조 및 전기적 특성에 관한 연구 (A Study on the Microstructure and Electrical Properties of ZnO:Pr Varistor with $Y_2O_3$Additive)

  • 남춘우;정순철;이외천
    • 한국전기전자재료학회논문지
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    • 제11권1호
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    • pp.48-56
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    • 1998
  • Pr\ulcornerO\ulcorner-based ZnO varistors were fabricated in the range of $Y_2$O$_3$additive content from 0.5 to 4.0mol%, and its microstructure and electrical properties were investigated. Yttrium was distributed nearly in the grain boundaries and the cluster phase formed at nodal point but more in cluster phase. The average grain size was decreased markedly from 34.9 to 8.6${\mu}{\textrm}{m}$ with increasing $Y_2$O$_3$additive content. It is believed that the decrease of grain size is attributed to the formation of cluster phase and the weakening of driving force for liquid sintering. As a result, $Y_2$O$_3$was acted as the inhibitor of the grain growth. With increasing $Y_2$O$_3$additive content, the varistor voltage, the activation energy, and the nonlinear exponent increased whereas the leakage current decreased, especially 4.0mol% $Y_2$O$_3$-added varistor exhibited very good I-V characteristics; nonlinear exponent 87.42 and leakage current 46.77nA. On the other hand, as $Y_2$O$_3$additive content increases, the varistor showed tendency of the salient decrease for donor concentration and the increase for barrier height. Conclusively, it is estimated that ZnO:Pr varistor compositions added more than 2.0mol% $Y_2$O$_3$are to be used to fabricate useful varistors.

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소결온도에 따른 ZPCCE계 바리스터의 제한전압특성 (Clamping Voltage Characteristics of ZPCCE-Based Varistors with Sintering Temperature)

  • 남춘우;박종아;김명준;유대훈
    • 한국전기전자재료학회논문지
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    • 제17권8호
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    • pp.835-839
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    • 2004
  • The surge characteristics of ZnO varistors consisting of $ZnO-{Pr}_6{O}_11-CoO-{Cr}_2{O}_3-{Er}_2{O}_3$ceramics were investigated at various sintering temperatures. As sintering temperature raises, the varistor voltage was decreased from 341.2 to 223.1 V/mm, the nonlinear exponent was decreased from 64,9 to 44.1. On the other hand, the leakage current exhibited a minimum(0.64 $\mu$A) at 134$0^{\circ}C$, The clamping capability was slightly deteriorated with increasing sintering temperature. On the whole, the ZPCCE-based ZnO varistors exhibited good clamping voltage characteristics as exhibiting the clamping voltage ratio of 1.85 ∼ 1.92 approximately at surge current of 100 A.

냉각속도에 따른 $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}-Y_{2}O_{3}$계 바리스터의 안정성 (Stability Of $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}-Y_{2}O_{3}$Based Varistors with Cooling Rate)

  • 류정선;정영철;김향숙;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.410-414
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    • 2001
  • The microstructure, V-I characteristics, and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Y$_2$O$_3$based vairstors were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, and the varistor voltage and the leakage current in the V-I chracteristics. But the nonlinear exponent relatively strongly affected by cooling rate. And the cooling rate also greatly affected the stability for DC stress. In gross, the varistors cooled with 4$^{\circ}C$/min exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent is -1.44% and -4.85%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12 h)+(0.85 V$_{1mA}$115$^{\circ}C$/12 h)\`(0.90 V$_{1mA}$12$0^{\circ}C$/12 h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12 h)+(0.95 V$_{1mA}$15$0^{\circ}C$/12 h). It should be emphasized that the stability of these varistors is much superior to that of others.s.of others.s.

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Pr6O11계 ZnO 바리스터 세라믹스의 미세구조 및 전기적 특성에 미치는 Dy2O3첨가의 영향 (Influence of Dy2O3 Addition on Microstructure and Electrical Properties of Pr6O11 Varistor Ceramics)

  • 남춘우;박종아
    • 한국재료학회지
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    • 제13권10호
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    • pp.645-650
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    • 2003
  • The microstructure and electrical characteristics of $Pr_{6}$ $O_{11}$ -based ZnO varistor ceramics composed of $ZnO-Pr_{6}$ $O_{ 11}$/$-CoO-Cr_2$$O_3$-$Dy_2$$O_3$-based ceramics were investigated with $Dy_2$$O_3$content in the range of 0.0∼2.0 mol%. As $Dy_2$$O_3$content was increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu\textrm{m}$ and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing $Dy_2$$O_3$content. The addition of $Dy_2$$O_3$highly enhanced the nonlinear properties of varistors, compared with the varistor without $Dy_2$$O_3$. In particular, the varistor with $Dy_2$$O_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of $(4.19∼0.33) ${\times}$10^{18}$ //㎤ and $(5.38∼1.74) ${\times}$10^{12}$ $\textrm{cm}^2$, respectively, with increasing $Dy_2$$O_3$content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% $Dy_2$$O_3$.

반응표면분석법에 의한 적층 칩 바리스터의 전기적 특성 (Electrical Properties of Multilayer Chip Varistors in the Response Surface Analysis)

  • 윤중락;정태석;최근묵;이석원
    • 한국전기전자재료학회논문지
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    • 제20권6호
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    • pp.496-501
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    • 2007
  • In order to enhance sintering characteristics on the $ZnO-Pr_6O_{11}$ based multilayer chip varistors (MLVs), a response surface analysis using central composite design method were carried out. As a result, varistor voltage($V_{1mA}$), nonlinear coefficient ($\alpha$), leakage current ($I_L$) and capacitance (C) were considered to be mainly affected by sintered temperature and holding time. MLVs sintered at $1200^{\circ}C$ and above $1200^{\circ}C$ revealed poor electrical characteristics, possibly due to the reaction between electrode materials(Pd) and $ZnO-Pr_6O_{11}$ based ceramics. On the sintering temperature range $1150{\sim}1175^{\circ}C$, nonlinear coefficient ($\alpha$) and leakage current ($I_L$) were shown to be $60{\sim}69$ and below $0.3{\mu}A$, respectively. In particular, MLVs sintered at $1175^{\circ}C$, 1.5 hr and $2^{\circ}C/hr$ (cooling speed) showed stable ESD(Electrical Static Discharge) characteristics under the condition of 10 times at 8 Kv with deviation varistor voltage, and deviation nonlinear coefficient were 0.3% and 0.33% (at positive), 0.55% (at negative), respectively.

ZPCCY계 세라믹 바리스터의 소결시간에 따른 전기적 특성 및 안정성 (The Electrical Properties and Stability of ZPCCY-Based Ceramic Varistors with Sintering Timpertature)

  • 정영철;류정선;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.472-475
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    • 2001
  • The electrical properties and stability of ZPCCY-based varistors composing of $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}-Y_{2}O_{3}$ ceramics were investigated with sintering time. As sintering time is increased, the nonlinear exponent decreased in the range of 51.19~26.70. Among varistors having above 30 in nonlinear exponent, for the varistor sintered for 1h, the nonlinearity was superior to the stability comparatively and, in the case of 2h, the stability was superior to the nonlinearity relatively. Consequently, it is estimated that the varistors sintered for 1~2h will be applied to various fields by trade-off between nonlinearity and stability.

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ZPCCY계 세라믹 바리스터의 소결시간에 따른 전기적 특성 및 안정성 (The Electrical Properties and Salability of ZPCCY-Based Ceramic Varistors wish Sintering Timperature)

  • 정영철;류정선;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.472-475
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    • 2001
  • The electrical properties and stability of ZPCCY-based varistors composing of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Y$_2$O$_3$ ceramics were investigated with sintering time. As sintering time is increased, the nonlinear exponent decreased in the range of 51.19∼26.70. Among varistors having above 30 in nonlinear exponent, for the varistor sintered for 1h, the nonlinearity was superior to the stability comparatively and, in the case of 2h, the stability was superior to the nonlinearity relatively. Consequently, it is estimated that the varistors sintered for 1∼2h will be applied to various fields by trade-off between nonlinearity and stability.

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고신뢰성 ESD보호용 칩 바리스터의 전기적 특성 (Electrical Properties of Multilayer Chip Varistor for ESD Protection with High Reliability.)

  • 윤중락;;;;;;최근묵;정태석;이석원;이헌용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.319-320
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    • 2006
  • In order to improve the ESD(Electrical Static Discharge) resistance of multilayer chip varistors, we have investigated ZnO-$Pr_6O_{11}$ based chip varistor by applying tape casting technology, whose fundamental component were ZnO : $Pr_6O_{11}$ :$Co_3O_4$: $Y_2O_3$: $Al_2O_3$=93.67: 2.53:2.53:1.25 : 0.015 (wt %). The effect of sintering condition on the multilayer chip varistors and electric properties was studied. The electrical properties and ESD resistance of multilayer chip varistor could be influenced the sintering temperature and condition.

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$La_{2}o_{3}$가 첨가된 ZPCCL계 세라믹스의 바리스터 특성 (Varistor Characteristics of ZPCCL-Based Ceramics Doped with $La_{2}o_{3}$)

  • 정영철;류정선;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.415-418
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    • 2001
  • The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

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