• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.675-680
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• 1992

The purpose of this investigation was to study the stability of perovskite structure, the variation of electrical properties and a microstructure with varing amount of PbTiO3 additive in PZN-PT-BT system. The results are as follows: 1. The pyrochlore phase was reduced as the amount of PbTiO3 additive was increased and completely eliminated at 0.15PT in PZN-PT-BT system. 2. The aging rate was increased in proportion to tetragonality because the internal stress was increased in proportion to tetragonality. 3. On increasing the amount of PbTiO3 additive, the Curie temperature was increased in proportion to tetragonality. 4. As the amount of PT in the composition increase, the variation of dielectric constant was sharpened and the diffuseness of the transition decreased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.378-387
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• 1994

To improve the properties of $PbTiO_3$ thin films successfully grown by thermal diffusion of 3 component layers of $Ti0_2/Pb/TiO_2(900{\AA}/900{\AA}/900{\AA})$ in preceding research, 3, 5, 7, 9, and 11 multilayer structures $(TiO_2/Pb/.../Tio_2)$ with thinner component layer of $200~300 {\AA}$ thick were deposited on Si substrate by RF sputtering, which were followed by RTA to form $PbTiO_3$ thin films. As a result, $PbTiO_3$ single phase was formed above $500^{\circ}C$. When the thickness of component layer reduced and the number of component layers increased, suppression of Pb-silicate and voids formation resulted in relatively sharp interfaces and the film composition became more homogeneous. Relative dielectric constants in MIM structure were independent of the annealing condition, but they increased with increasing thickness of the $PbTiO_3$ thin films. The maximum breakdown field in MIS structure reached 150kV/cm.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.206-213
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• 1991

The crystallized solder glasses with the low melting temperature for electronic package were prepared with the compositions of 77-80wt% PbO, 4.5-6wt% ZnO, 7.5-8.5wt% $B_2O_3$, 1-2wt% CaO, and 0.5-2.0wt% $P_2O_5$ containing 3-7wt% $TiO_2$. The Characterization of the solder glasses were studied using DTA, SEM and XRD. Frit containing 3wt% $TiO_2$ had crytallzation temperature range of $420-440^{\circ}C$. The major crystalline phase was identified as $2PbO{\cdot}ZnO{\cdot}B_2O_3$ by X-ray diffraction. Frits containing 4 wt% $TiO_2$ consisted of crysalline Phases of $PbTiO_3$ and $2PbO{\cdot}ZnO{\cdot}B_2O_3$ in the temperature range of $420-440^{\circ}C$, When g1ass frit containing 5wt% $TiO_2$ were heat-treated in the temperature range of $440-460^{\circ}C$, major crytalline phase was perovskite lead titanate.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.438-445
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• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.235-241
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• 1996

In this paper dielectric and electrostrictive strain properties of (1-y-x)Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$-PbTiO$_{3}$$-yPbTiO_{3}-xSrTiO_{3}[(1-y-x)PMN-yPT-xST]$ ceramics fabricated by using columbite precursor method have been investigated with the substitution of SrTiO$_{3}$(ST). Dielectric constant of the specimens increased with the increase of ST content up to 5[m/o] and decreased with further substitution of ST. And the pyrochlore phase decreased with the increase of ST content up to 5[m/o] in XRD analysis. The elimination of the pyrochlore phase improved dielectric constants. The electrostrictive strains generated by AC electric field have the highest value at 5[m/o] SrTiO$_{3}$ addition and the hysteresis of strain ranged from 12 to 20[%]. The electrostrictive strain at various temperature investigated in the temperature range of $-50[^{\circ}C]~74[^{\circ}C].$ In higher temperature than phase transition region, it showed paraelectric property which shows very small hystersis.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.189.2-189
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.8-11
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• 1988

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.354-359
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• 1999

• Journal of Sensor Science and Technology
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• v.12 no.1
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• pp.10-15
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• 2003

$PbTiO_3$/P(VDF/TrFE) thin film for pyroelectric infrared sensor's sensing materials have been fabricated by spin coating technique. 65 wt% VDF and 35 wt% TrFE were for P(VDF/TrFE) powder. $PbTiO_3$ powder was used for a ceramic - polymer composites materials. Surface of composite thin film by ceramic fraction factor was observed by SEM. The $PbTiO_3$/P(VDF/TrFE) thin film capacitancy, dielectric constant and dielectric loss measured by impedence analyzer(HP4192A) and pyroelectric coefficient was measured by semiconductor parameter analyzer(HP4145B).