• 분석과학
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• 제9권4호
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• pp.382-391
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• 1996

세라믹스 분야, 전자요업 분야 등에서 폭넓게 사용되고 있는 티탄산바륨 소재에 대하여 신속하고 정확하게 분석할 수 있는 X-선 형광분석용 표준물질 12종을 제작하였다. 특히 매질효과 제거, 보관성, 균질성 등을 고려하면서 융제 ($Li_2B_4O_7+LiBO_2$)로 시료를 16배 희석하여 제작 하였다. 티타늄을 비롯한 몇 원소는 매트릭스의 영향을 받는 것으로 보여 실험 계수법을 사용하고 Lucas Tooth와 Price의 식을 이용해 매트릭스의 영향을 보정해 주었다. 세 곳의 분석기관에서 X-선 형광분광기로 12개의 표준물질에 포함된 15 원소에 대하여 검정곡선을 작성해 본 결과 BaO, PbO, SrO, $Fe_2O_3$, $La_2O_3$, $SnO_2$, ZnO, $ZrO_2$, CaO들은 correlation factor가 0.995를 넘는 아주 좋은 곡선을 얻었다. $SiO_2$와 $Al_2O_3$는 X-선 형광세기도 약하고 correlation factor가 낮은 검정 곡선을 보였다.

• 한국세라믹학회지
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• 제48권5호
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• pp.467-470
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• 2011

Pb(Zr,Ti)$O_3$ (PZT) based ceramics with superior piezoelectric properties have been extensively used in various domestic and industrial appliances. However, PZT ceramics causing environmental contamination and health problems need to be eventually replaced by any of Pb-free materials. $(Na_{0.53}K_{0.47})(Nb_{1-x}Ta_x)O_3$ (NKNT), one of Pb-free piezoelectric ceramics, has long been known but its properties are not fully understood and developed. In this study, dielectric and piezoelectric properties of Pb-free NKNT ceramics were studied with Ta substitution for B-site at x = 0~0.6. It was found that polymorphic phase transition (PPT) between orthorhombic and tetragonal phases was notably influenced by Ta substitution. The highest piezoelectric coefficient ($d_{33}$) of 284 pC/N was occurred at x = 0.45.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.218-218
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• 2008

최근 미관을 위하여 소형 네온관 등이 사용되고 있다. 따라서 네온관 등 구동에 사용되는 인버터는 안정기 역할을 하면서 소형화와 경량화가 중요한 요소이다. 본 연구는 압전 특성이 우수한 PZT계 세라믹스 조성인 $(Pb_{0.94}Sr_{0.06})[(Ni_{1/2}W_{1/2})_{0.02}(Mn_{1/3}Nb_{2/3})_{0.07}(Zr_{0.51}Ti_{0.49})_{0.91}]O_3$에 특성 향상을 위해 PbO, $Fe_2O_3$, $CeO_2$, Xwt% $Nb_2O_5$ 조성별로 첨가하였으며 그에 따른 유전, 압전 특성을 조사하고 또한 Rosen type의 압전 트랜스포머를 제작하여 각 조성별 변환효율을 측정하였다. 실험방법은 일반적인 세라믹스 제조공정으로 파우더 혼합 후 24시간 ball milling하고 $850^{\circ}C$ 에서 2시간 하소 후 $1230^{\circ}C$에서 2시간 소결하였다. 또한 최종 소결 시편을 이용하여 Rosen type의 압전 트랜스포머를 제작하였다. 상 분석을 위해 XRD를 이용하여 perovskite구조를 확인하고 미세구조확인을 위해 SEM으로 관찰하였다. 압전 특성을 평가하기 위해 압전 $d_{33}$ Meter를 사용하였으며, Impedence analyzer HP 4194A를 이용하여 전기적 특성을 측정하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.131-134
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• 2001

In this paper, the piezoelectric and dielectric properties as a function of x and a in $aPbZr_xTi_{1-x}O_3-(1-a)Pb(Mn_{1/3}Nb_{2/3})O_3$ + ywt%MgO is investigated. As a results, when a is 0.95 and x is 0.505, electromechanical coupling factor$(k_p)$, permittivity${\varepsilon}_33^T/{\varepsilon}_0$, piezoelectric strain constant$(d_{33})$ and mechanical quality factor$(Q_m)$ are 58 %, 1520, 272 pC/N and 1550, respectively. From XRD analysis, when x is 0.505, it is MPB which present rhombohedral and tetragonal phase in same quantity. Also, From SEM observation, when sintering temperature is $1150^{\circ}C$, grain size is about $2\;{\mu}m$. As a results added MgO dopant in the ternary piezoelectric ceramic, when MgO content is 0.1 wt%, $k_p$ increases to 63[%].

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.186-189
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• 2003

The role of excess Pb about the crystallization behavior and electrical properties in b(Zr$\sub$0.52/Ti$\sub$0.48/)O3(PZT) thin films has not been precisely defined. In this work, the effect of excess Pb content on the ferroelectric properties of these films was investigated. To analyze the effect, PZT films containing various amounts of excess Pb were Prepared. PZT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (111) and no pyrochlore phase was observed. As higher excess Pb was included, the films showed that value of leakage current shift from 2.03${\times}$10$\^$-6/ to 6.63 ${\times}$ 10$\^$-8/A/cm$^2$ at 100kV/cm, and value of remanent polarization shift from 8.587 ${\mu}$C /cm$^2$ to 4.256 ${\mu}$C/ cm$^2$. Electrical properties of PZT thin film affected by Pb excess content of target were explained to be caused of defect among space charges and defect grain boundaries.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.178-180
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• 2005

In this study, in order to develop multilayer low temperature sintering piezoelectric transformer, $Pb_{0.97}Sr_{0.03}[(Mn_{1/3}Nb_{2/3})x(Zr_{0.48}Ti_{0.52})_{1-x}O_3]+$ 0.25wt% $CeO_2$+0.3 wt% $Nb_2O_5$ system ceramics were fabricated using $Li_2CO_3-CaCO_3$ and CuO as sintering aids and their piezoelectric and dielectric characteristics were investigated with the amount of PMN substitution. With increasing PMN substitution, electromechanical coupling factor kp and dielectric constant were increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.38-41
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• 1992

Pb(Zr,Ti)$O_3$ powders were synthesized by the partial oxalate method and the modified partial oxalate method, where the difference between the two is the use of pre-reacted (Zr,Ti)$O_2$ in the former method. When compared with conventional mixed oxide method, calcination temperature can be reduced to less than $700^{\circ}C$ by both partial oxalate methods, and the resulting particle size was finer and more uniform. Using partial oxalate-derived PZT powders, sintering temperatures can also be reduced as low as $950^{\circ}C$ without sacrificing desired dielectric and piezoelectric properties, such as relative permittivity, electromechanical coupling factor, and piezoelectric coefficient. Two partial oxalate methods yield ceramics with almost the same physical and electrical properties, so that the step of producing ZTO powder does not seem to be necessary.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• 한국분말재료학회지
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• 제25권6호
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• pp.487-493
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• 2018

The impact of different mixing methods and sintering temperatures on the microstructure and piezoelectric properties of PZNN-PZT ceramics is investigated. To improve the sinterability and piezoelectric properties of these ceramics, the composition of $0.13Pb((Zn_{0.8}Ni_{0.2})_{1/3}Nb_{2/3})O_3-0.87Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZNN-PZT) containing a Pb-based relaxor component is selected. Two methods are used to create the powder for the PZNN-PZT ceramics. The first involves blending all source powders at once, followed by calcination. The second involves the preferential creation of columbite as a precursor, by reacting NiO with $Nb_2O_5$ powder. Subsequently, PZNN-PZT powder can be prepared by mixing the columbite powder, PbO, and other components, followed by an additional calcination step. All the PZNN-PZT powder samples in this study show a nearly-pure perovskite phase. High-density PZNN-PZT ceramics can be fabricated using powders prepared by a two-step calcination process, with the addition of 0.3 wt% MnO2 at even relatively low sintering temperatures from $800^{\circ}C$ to $1000^{\circ}C$. The grain size of the ceramics at sintering temperatures above $900^{\circ}C$ is increased to approximately $3{\mu}m$. The optimized PZNN-PZT piezoelectric ceramics show a piezoelectric constant ($d_{33}$) of 360 pC/N, an electromechanical coupling factor ($k_p$) of 0.61, and a quality factor ($Q_m$) of 275.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권4호
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• pp.232-238
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• 2000

PZT thin films(3500 ) have been prepared onto $Pt/Ti/SiO_2/Si$ substrates with a RF magnetron sputtering system using PB1.05(Zr0.52,Ti0.48)O3 ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at $700^{\circ}C$ for 60 seconds were like these remanent polarization were $12.1 \muC/cm^2$, coercive field were 110 kV/cm, leakage current density were $4.1\times10-7 A/cm^2,\; \varepsilonr=442,$ and remanent polarization were decreased by 22% after 1010 cycles, respectively.