• Fibers and Polymers
• /
• v.5 no.2
• /
• pp.151-155
• /
• 2004

Cold plasma of $O_2$ or Ar was irradiated on hydrophobic Kapton surface to attenuate or remove the electrostatic potential. A measurement on charge dissipation speed clarifies the obscure effect of plasma. These consequences reveal that $O_2$ plasma etching is more effective than Ar plasma. After 30 days, the dissipation speed of accumulated charge on initially etched sample has not changed under summer season.

• Korean Journal of Materials Research
• /
• v.3 no.6
• /
• pp.565-574
• /
• 1993

The Ar/Ar- $H_{2}$ plasma method Lvas applied to reduce and refine high purity Nb metal. Inaddition, the reaction between molten Nb metal and hydrogen were also analyzed in the Ar-(20%)$H_{2}$plasma. The metallic Nb of 99.5wt% was obtained at the ratio of $C/Nb_{2}O_{5}$=5.00 in the Ar plasma reductionand the $O_2$ loss from the thermal decomposition of niobium oxides did not take place. In the Ar-(20%)Hi plasma the metallic Nb of 99.8wt% was produced at the ratio of $C/Nb_{2}O_{5}$=4.80. It was observedthat a major reaction of the deoxidation was the reaction with H, Hi, and a deoxidation by the evaporationof $NbO_x$ did not occur but a mass loss of Nb did by a "splash" effect. The deoxidation reaction rateobeyed the 1st order reaction kinetics and the reaction rate constant(k') of deoxidation was $7.8 \times 10_{-7}$(m/sec).The solubility of hydrogen in Nb metal was 60ppm and it was larger than the solubility of molecularstate hydrogen by 40ppm in the Ar-(20%)$H_{2}$ plasma method. A saturation was within 60sec anda hydrogen content was reduced below lOppm by a Ar plasma re-treatment.by a Ar plasma re-treatment.

• Korean Journal of Materials Research
• /
• v.2 no.5
• /
• pp.337-342
• /
• 1992

Spectroscopic diagnostics on reactive plasmas was carried out in a facing target sputtering unit with BaO +12Fe composite targets and 50% $O_2+$ Ar sputter gas. Spectra of rective plasmas were composed of peaks which were assigned to be Ba, B$a^+$, Fe, FeO, F$e^+$, Ar, $Ar^+$, O, $O^+$. As detecting positions in plasmas were far away from targets, the relative peak intensities of the ions and neutral species were decreased, but the relative intensities of the former decreased faster than those of the latter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.213-216
• /
• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.

• Korean Journal of Materials Research
• /
• v.22 no.11
• /
• pp.620-625
• /
• 2012

A general synthetic method to make $Fe_3O_{4-{\delta}}$ (activated magnetite) is the reduction of $Fe_3O_4$ by $H_2$ atmosphere. However, this process has an explosion risk. Therefore, we studied the process of synthesis of $Fe_3O_{4-{\delta}}$ depending on heat-treatment conditions using $FeC_2O_4{\cdot}2H_2O$ in Ar atmosphere. The thermal decomposition characteristics of $FeC_2O_4{\cdot}2H_2O$ and the ${\delta}$-value of $Fe_3O_{4-{\delta}}$ were analyzed with TG/DTA in Ar atmosphere. ${\beta}-FeC_2O_4{\cdot}2H_2O$ was synthesized by precipitation method using $FeSO_4{\cdot}7H_2O$ and $(NH_4)_2C_2O_4{\cdot}H_2O$. The concentration of the solution was 0.1 M and the equivalent ratio was 1.0. ${\beta}-FeC_2O_4{\cdot}2H_2O$ was decomposed to $H_2O$ and $FeC_2O$4 from $150^{\circ}C$ to $200^{\circ}C$. $FeC_2O4$ was decomposed to CO, $CO_2$, and $Fe_3O_4$ from $200^{\circ}C$ to $250^{\circ}C$. Single phase $Fe_3O_4$ was formed by the decomposition of ${\beta}-FeC_2O_4{\cdot}2H_2O$ in Ar atmosphere. However, $Fe_3C$, Fe and $Fe_4N$ were formed as minor phases when ${\beta}-FeC_2O_4{\cdot}2H_2O$ was decomposed in $N_2$ atmosphere. Then, $Fe_3O_4$ was reduced to $Fe_3O_{4-{\delta}}$ by decomposion of CO. The reduction of $Fe_3O_4$ to $Fe_3O_{4-{\delta}}$ progressed from $320^{\circ}C$ to $400^{\circ}C$; the reaction was exothermic. The degree of exothermal reaction was varied with heat treatment temperature, heating rate, Ar flow rate, and holding time. The ${\delta}$-value of $Fe_3O_{4-{\delta}}$ was greatly influenced by the heat treatment temperature and the heating rate. However, Ar flow rate and holding time had a minor effect on ${\delta}$-value.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1252-1253
• /
• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method with different $Ar/O_2$ ratio. The $V_{1.8}W_{0.2}O_5$ thin films were measured electrical and structural properties, fairly good Temperature coefficient of resistance(TCR). It was found that electrical and structural properties, TCR properties of thin films were strongly dependent upon the $Ar/O_2$ ratio. The dielectric constant of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were 93 with a dielectric loss of 0.535, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were -3.15%/$^{\circ}C$.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.3
• /
• pp.116-119
• /
• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.21-24
• /
• 2000

Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Journal of the Korean Ceramic Society
• /
• v.31 no.8
• /
• pp.886-892
• /
• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• Korean Journal of Materials Research
• /
• v.7 no.1
• /
• pp.3-7
• /
• 1997

VO$_{2}$ 써모크로믹 원도우의 가시광 투과율을 높히기 위하여 내마모성이 우수한 SiO$_{2}$박막을 이용하여 AR(anti-rdflection)코팅을 하였다. 두가지 중요한 공정변수인 기판온도와 증착속도가 AR효과에 미치는 영향을 조사하였다. 그리고 SiO$_{2}$박막의 AR효과는 낮은 기판온도와 높은 증착속도에서 더 우수한 것으로 나타났으며, 이는 SiO$_{2}$AR 박막의 굴절율과 상관관계가 있는 것으로 나타났다. VO$_{2}$ 써모크로믹 유리 위에 SiO$_{2}$AR-코팅을 했을 때 약 30% 정도의 가시광 투과율의 향상이 있었다. 그리고 AR-코팅을 하지 않은 경우보다 더 뚜렷한 써모크로미즘을 나타냈다. 또한 천이온도는 7$0^{\circ}C$정도로 AR-코팅을 하지 않은 VO$_{2}$써모크로믹 유리의 경우와 같게 나타났다.