• 제목/요약/키워드: $O_2/Ar$

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유연성 스테인레스와 폴리이미드 기판에서 제조된 CIGS 박막 태양전지의 효율 개선 및 특성 연구

  • 김재웅;김혜진;김기림;김진혁;정채환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.245-245
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    • 2015
  • Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 높은 효율과 낮은 제조비용, 높은 신뢰성으로 인해 박막 태양전지 중 가장 각광받고 있다. 특히 유리기판 대신 가볍고 유연한 철강소재나 플라스틱 소재를 이용하여 발전분야 외에 건물일체형, 수송용, 휴대용등 다양한 분야에 적용이 가능하다. 이러한 유연 기판을 이용한 CIGS 태양전지의 개발을 위해서는 기판의 특성에 따른 다양한 공정개발이 선행되어야 한다. 특히 CIGS 태양전지에서는 Na의 역할이 매우 중요한데 유연기판의 경우 이러한 Na이 없을 뿐만 아니라 철강기판의 경우 Fe, Ni, Cr등의 불순물이 확산되어 흡수층의 특성을 저하시켜 효율을 감소시킨다. 따라서 이러한 철강 기판의 경우 불순물의 확산을 방지하는 확산방지막이 필수적이다. 또한 플라스틱기판의 경우 내열성이 낮아 저온에서 공정을 진행해야하는 단점이 있다. 이러한 유연기판의 특성을 고려하여 본 연구에서는 유연기판으로 STS 430 stainless steel과 poly-imide를 이용하여 특성 개선을 진행하였다. 먼저 stainless steel과 Poly-imide, soda-lime glass, coning glass의 기판을 이용하여 기판에 따른 흡수층의 특성을 비교 분석하였으며 stainless steel 기판을 이용하여 확산 방지막의 유무 및 두께에 따른 흡수층 및 소자의 특성을 분석하였다. 이때 확산 방지막은 기존 TCO 공정에서 사용되는 i-ZnO를 사용하였으며 RF sputter를 이용하여 50~200nm로 두께를 달리하며 특성 비교를 실시하였다. 이때 효율은 확산방지막을 적용하지 않았을 때 약 5.9%에서 확산 방지막 적용시 약 10.6%로 증가하였다. 또한 poly-imide 기판을 이용하여 $400^{\circ}C$이하에서 흡수층을 제조하여 특성평가를 진행하였으며 소자 제조 후 효율은 약 12.2%를 달성하였다. 모든 흡수층은 Co-Evaporation 방법을 이용하여 제조하였으며 제조된 흡수층은 SEM, XRF, XRD, GD-OES, PL, Raman등을 이용하여 분석하였으며 그 외 일반적인 방법을 이용하여 Mo, CdS, TCO, Al grid를 제조하였다. AR 코팅은 제외 하였으며 제조된 소자는 솔라 시뮬레이터를 이용하여 효율 특성 분석을 실시하였으며 Q.E. 분석을 실시하였다.

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청색 Diode 개발을 위한 ZnSe 박막성장과 특성에 관한 연구 (Growth and Characterization of ZnSe Thin Film for Blue Diode)

  • 박창선;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.533-538
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    • 2001
  • The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450$^{\circ}C$ Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a$\_$o/ was 5.6687 ${\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 29 3K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, $\Gamma$$\_$8/ and $\Gamma$$\_$7/ to conduction band $\Gamma$$\_$6/ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δso is 0.0981 eV. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.

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The electronic structure of the ion-beam-mixed Pt-Cu alloys by XPS and XANES

  • Lim, K.Y.;Lee, Y.S.;Chung, Y.D.;Lee, K.M.;Jeon, Y.;Whang, C.N.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.133-133
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    • 1998
  • In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K a(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

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POLYMER SURFACE MODIFICATION WITH PLASMA SOURCE ION IMPLANTATION TECHNIQUE

  • Han, Seung-Hee;Lee, Yeon-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon;Kim, Hai-Dong;Kim, Gon-ho;Kim, GunWoo
    • 한국표면공학회지
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    • 제29권5호
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    • pp.345-349
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    • 1996
  • The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.

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keV and MeV Ion Beam Modification of Polyimide Films

  • Lee, Yeonhee;Seunghee Han;Song, Jong-Han;Hyuneui Lim;Moojin Suh
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.170-170
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    • 2000
  • Synthetic polymers such as polyimide, polycarbonate, and poly(methyl methacrylate) are long chain molecules which consist of carbon, hydrogen, and heteroatom linked together chemically. Recently, polymer surface can be modified by using a high energy ion beam process. High energy ions are introduced into polymer structure with high velocity and provide a high degree of chemical bonding between molecular chains. In high energy beam process the modified polymers have the highly crosslinked three-dimensionally connected rigid network structure and they showed significant improvements in electrical conductivity, in hardness and in resistance to wear and chemicals. Polyimide films (Kapton, types HN) with thickness of 50~100${\mu}{\textrm}{m}$ were used for investigations. They were treated with two different surface modification techniques: Plasma Source Ion Implantation (PSII) and conventional Ion Implantation. Polyimide films were implanted with different ion species such as Ar+, N+, C+, He+, and O+ with dose from 1 x 1015 to 1 x 1017 ions/cm2. Ion energy was varied from 10keV to 60keV for PSII experiment. Polyimide samples were also implanted with 1 MeV hydrogen, oxygen, nitrogen ions with a dose of 1x1015ions/cm2. This work provides the possibility for inducing conductivity in polyimide films by ion beam bombardment in the keloelectronvolt to megaelectronvolt energy range. The electrical properties of implanted polyimide were determined by four-point probe measurement. Depending on ion energy, doses, and ion type, the surface resistivity of the film is reduced by several orders of magnitude. Ion bombarded layers were characterized by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), XPS, and SEM.

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Cu배선을 위한 Ta-Si-N Barrier에 관한 연구 (Studies on the Ta-Si-n Barrier Used for Cu Interconnection)

  • 신영훈;김종철;이종무
    • 한국재료학회지
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    • 제7권6호
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    • pp.498-504
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    • 1997
  • Cu는 AI보다 비저항이 더 낮고, 일렉트로마이그레이션 내성이 더 강하기 때문에 AI을 대체하여 사용될 새로운 상부배선 재료로 널리 연구되고 있다. 그러나 Cu는 SiO$_{2}$층을 통해 Si기판 속으로 확산하는 것과 같은 열적불안정성을 갖고 있으므로 Cu 배선을 위해서는 barrier금속을 함께 사용해야 한다. 지금까지 알려진 가장 우수한 재료는 TaSi$_{x}$N$_{y}$이다. Tasi$_{x}$N$_{y}$는 90$0^{\circ}C$에서 불량이 발생하는 것으로 보고된 바 있으나, 그것의 barrier특성과 관련하여 확인하고 또 새로 조사되어야 할 내용들이 많이 있다. 본 연구에서는 반응성 스퍼터링 테크닉을 사용하여 (100)Si 웨이퍼상에 TaSi$_{x}$N$_{y}$막을 증착하고, Cu에 대한 barrier재료로서 반드시 갖추어야 할 열적 안정성을 면저항의측정, X선 회절 및 AES 깊이분석 등에 의하여 조사하였다. 스퍼터링 공정에서 N$_{2}$/Ar기체의 유량비가 15%일때 열적 안정성이 가장 우수한 TaSi$_{x}$N$_{y}$막이 얻어졌다. Ta와 TaN은 각각 $600^{\circ}C$$650^{\circ}C$에서 불량이 발생하는 반면, TaSi$_{x}$N$_{y}$는 90$0^{\circ}C$에서 불량이 발생하였다. TaSi$_{x}$N$_{y}$의 불량기구는 다음과 같다:Cu는 TaSi$_{x}$N$_{y}$막을 통과하여 TaSi$_{x}$N$_{y}$/Si계면으로 이동한 다음 Si기판내의 Si원자들과 반응한다. 그 결과 TaSi$_{x}$N$_{y}$Si가 생성된다.

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이온선 혼합법이 도재-금속 계면 변화에 미치는 영향에 관한 실험적 연구 (AN EXPERIMENTAL STUDY ON THE ALTERATIONS OF ION-BEAM-ENHANCED ADHESIONS ON A VARIETY OF CERAMIC-METAL INTERFACES)

  • 정극모;박남수;우이형
    • 대한치과보철학회지
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    • 제30권2호
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    • pp.135-154
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    • 1992
  • This study was performed to analyze bond strength, the alterations of the interfaces between metal films which are populary used and considered to contribute to the chemical reaction with porcelain, according to constant ion- beam- mixing, and the relation between interfacial chemical reactions and bond strength in metal/porcelain specimens. For this study, three seperate metals : selected-gold, indium and tin were chosen ; each to be bonded to a seperate body porcelain. Bonding occurs when the metal is deposited to the body porcelain using a vacuum evaporator. The vacuum evaporator used $10^{-5}\sim10^{-6}$ Torr vacuum states for the evaporation of various metals (Au, Sn, In). Ion-beam-mixing of the porcelain/metal interfaces caused reactions when the Ar+ was implanted into thin films using a 80 KeV accelerator. These ion-beam-mixed specimens were then compared with an unmixed control group. An analysis of bond strength and ionic changes between the the metal and porcelain was performed by electron spectroscopy of chemical analysis (ESCA) and scratch test. The finding led to the following conclusions : 1. Light microscopic views of the scratch test : The ion-beam-mixed Au/porcelain specimen showed narrower scratched streams than the unmixed specimen. However, the Sn/porcelain, In/porcelain specimens showed no differences in the two conditions. 2. Acoustic emissions in scratch tests : The ion-mixed Au/porcelain, In/porcelain specimens showed signals closer to the metal/porcelain interfaces than unmixed specimens. Conversely, the ion-mixed Sn/porcelain specimen showed more critical signals in superficial portions than unmixed specimens. 3. After ion- beam-mixing, the Au/porcelain specimen showed apparently increased bond strength, and the In/porcelain specimen showed very slightly increased bond strength. However, the Sn/porcelain specimen showed no differences between ion mixed specimen and the unmixed one. 4. ESCA analysis : The ion-beam-mixed Au/porcelain specimen showed a higher peak separated value (4.3eV) than that of the unmixed specimen(3.65eV), the ion-beam-mixed In/porcelain specimen showed a higher peak separated value (9.43eV) than that of the unmixed specimen(7.6eV) and the ion-beam-mixed Sn/porcelain specimen showed a higher peak separated value (8.79eV) than that of the unmixed specimen(8.5eV). 5. Interfacial changes were observed in the ion-mixed Au/porcelain, In/porcelain and Sn/porcelain specimens. Especially, significant interfacial changes were measured in the ion- mixed Sn/porcelain specimen. Tin dioxide(SnO2) and a combination of pure tin and tin dioxide (Sn+SnO2) were produced. 6. In the Au/porcelain specimen, the interfacial chemical reaction showed increased bond strength between gold and porcelain substrate. But, in the In/porcelain, Sn/porcelain specimens, interfacial chemical reactions did not affected the bond strength between metal and porcelain substrate. Especially, bonding strength on the ion mixed Sn/porcelain specimen showed the least amount of difference.

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울릉도(鬱陵島) 북부(北部) 알칼리 화산암류(火山岩類)에 대(對)한 암석학적(岩石學的) 연구(硏究) (Petrology of Alkali Volcanic Rocks in Northern part of Ulrung Island)

  • 김윤규;이대성
    • 자원환경지질
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    • 제16권1호
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    • pp.19-36
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    • 1983
  • The study revealed that the sequence of volcanism in Ulrung island can be classified into 5 stages, and the volcanic history is summerized as follow: 1st stage: Eruption of basaltic agglomerates, tuffs and lavas, 2nd stage: Eruption of trachytic and trachyandesitic agglomerates and tuffs, 3rd stage: Eruption of trachyte lavas and their lapilli tuffs, 4th stage: Eruption of trachyte lavas and nepheline phonolites, 5th stage: Eruption of pumice, trachytic ash and lapilli, and plutonic ejecta (fragments of alkali gabbro, monzonite and alkali feldspar syenite) and a subsequent caldera formation. Finally, a small scale eruption of leucite bearing trachyandesite lava in the caldera. Several evidences show that there have been long erosional intervals between the 1st and 2nd stages and between the 4th and 5th stages. A K-Ar age for trachybasalt lava of the 1st stage was determined to be 1.8 Ma, and a $C^{14}$ age, 9300Y. (Machida, 1981) is available for these volcanic events. Therefore, it is considered that volcanic activity of the island above sea level began at least in early Pleistocene, and continued to until 9300 years ago exploding large amount of pumice, prior to pouring out of leucite bearing trachyandesite from the inner caldera. Using solidification index (SI) of Kuno, microscopic texture and mineral composition as criteria of the classification, the volcanic rocks are classified into alkali basalt, trachybasalt, trachyandesite, trachyte and phonolite. These are mostly prophyritic in texture. Main constituent minerals of alkali basalt and trachybasalt are plagioclase, olivine, Ti-augite and magnetite. Principal minerals of trachyandesite are plagioclase, anorthoclase, clinopyroxenes, kaersutite, biotite and magnetite. Trachyte and phonolite consist mainly of anorthoclase, clinopyroxene and magnetite, showing typical trachytic texture in groundmass. In solidification index, alkali basalt ranges from 39 to 27, trachybasalt 17 to 14, trachyandesite 12 to 9 and trachyte 8.15 to 0.72. A trend of compositional variation showing a typical alkali volcanic rock series is revealed on $SiO_2$-oxides and SI-oxides diagrams. In $SiO_2$-total alkali diagram, alkali lime index and An-Ab'-Or diagram, the samples fall into the fields of potassic series of the alkali volcanic rock series, whereas in A-F-M diagram show a trend toward the alkali enrichment with a curve approaching toward the iron apex. In particular, trachybasalt lavas in this island have higher total iron contents which is comparable to alkali rocks in other areas, e. g. as Gough and Tristan volcanic islands located near the Mid-Oceanic ridge in South Atlantic Ocean.

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Diamond 박막 성장에 미치는 Si 표면 영향의 AES에 의한 연구 (A Study on the Effect of Si Surface on Diamond Film Growth by AES)

  • 이철로;신용현;임재영;정광화;천병선
    • 한국진공학회지
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    • 제2권2호
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    • pp.199-208
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    • 1993
  • Si 기판 표면상태 변화와 관련된 핵생성 자유에너지 증가에 따른 다이아몬드 박막성장 거동을 관찰하였다. 표면 염마조건 변화에 따른 3가지 기판(A-Si, B-Si, C-Si)위에 동일한 성장조건으로 다이아몬드를 성장하였으며, 이때 형상인자와 관련된 자유에너지 관계는 ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$이다. AES, SEM, XRD, RHEED에 의해 각각의 박막 A, B, C를 조사한 결과, 핵생성 자유에너지가 가장 적은 A 박막은 (100) (110) 면이 지배적인 고품위 다이아몬드 박막이다. 자유에너지가 A에 비해 다소 적은 B 박막은 (111) 면이 지배적인 8면체 다이아몬드 박막이고, 자유에너지가 자장 적은 C 박막은 흑연이 많이 함유된 구상의 다이아몬드이다.

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CIGSe2 박막태양전지용 Mo 하부전극의 물리·전기적 특성 연구 (A Study of Mo Back Electrode for CIGSe2 Thin Film Solar Cell)

  • 최승훈;박중진;윤정오;홍영호;김인수
    • 한국진공학회지
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    • 제21권3호
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    • pp.142-150
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    • 2012
  • CIGS 박막 태양전지 기판소재인 소다라임유리 표면에 플라즈마 전처리 후 DC 마그네트론 스퍼터링 방법으로 Mo 박막을 제조하였다. 증착압력과 증착시간 변화에 따른 Mo 박막의 물리적, 전기적 특성을 분석하였고, 셀렌화 처리 조건에 따른 $MoSe_2$ 생성 여부와 경향성을 연구하였으며, Mo 박막 두께에 따른 AZO/i-ZnO/CdS/CIGS/Mo/SLG 구조의 태양전지를 제조하여 그 특성을 분석 및 평가하였다. 증착압력이 4.9 mTorr에서 1.3 mTorr로 감소할수록 치밀하고 결정입자 사이의 공극이 적고, 증착속도가 감소하고 전기저항도가 낮은 Mo 박막이 증착되었다. 증착온도가 상온에서 $200^{\circ}C$로 증가할수록 Mo 박막은 치밀한 구조를 가지고 결정성은 향상되어 면저항이 낮게 나타났다. 셀렌화 시간이 길어질수록 Mo 박막 층은 줄어들고, $MoSe_2$ 층 생성두께가 커지는 것을 알 수 있었고, 열처리로 인해 결정화 되면서 전체 박막의 두께가 줄어들었으며, $MoSe_2$ 층의 배양성은 c축이 Mo 표면과 수직 방향으로 성장된 것을 알 수 있었다. Mo 박막의 두께가 1.2 ${\mu}m$와 0.6 ${\mu}m$인 AZO/i-ZnO/CdS/CIGS/Mo/SLG 구조로 이루어진 CIGS 박막 태양전지를 제조하였다. Mo 박막의 두께가 1.2 ${\mu}m$일 때 보다 0.6 ${\mu}m$일 때 CIGS 박막 태양전지의 변환 효율은 9.46%로 비교적 우수한 특성을 나타났다. CIGS 박막 태양전지에서 하부전극인 Mo 박막 특성은 유리기판 및 광흡수 층과의 계면 형성 따라 큰 영향을 미친다는 것을 알 수 있었고, 유리기판의 플라즈마 처리와 Mo 박막의 두께조절로 Na 효과 및 $MoSe_2$층 형성 제어함으로써 CIGS 박막 태양전지의 특성 개선에 효과를 가질 수 있었다.