• The korean journal of orthodontics
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• v.31 no.4 s.87
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• pp.403-414
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• 2001

The purpose of this study was to evaluate treatment effects of the modified Teuscher appliance (MTA) in early Class II division 1 malocclusion. For this purpose, treatment effects of the bionator were compared with those of the MTA. The twenty subjects who were treated excellently with bionator and MTA were selected in each group. In pre- and post-treatment lateral cephalograms, 50 variables were measured, and then the differences between pretreatment and posttreatment data of the bionator and the MTA were statistically evaluated by t-test. The results were as follows : 1. The linear measurements that showed large difference between the bionator group and the MTA group are U1 to FH, U1 to PP, U6 to FH, U6 to PP, Ar-Pog, ramus height, L1 to A-Pog, L1 to facial plane (p<0.05). 2. The angular measurements that showed large difference between the bionator group and the MTA group are SNB, SNA, FABA, APDI (p<0.05). 3. The measurements of the growth pattern such as facial height ratio, FMA, SN-MP angle showed no difference between two groups (p>0.05). These results suggest that the bionator influence the mandiblar growth and lower dentoalveolar structures more than the MTA, and the MTA influence upper jaw and upper dentoalveolar structures more than the bionator comparatively in early Class II division I malocclusion.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.215-220
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• 2001

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

• Journal of the Mineralogical Society of Korea
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• v.13 no.1
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• pp.1-14
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• 2000

알루나이트는 포항지역의 제3기 연일층군의 이암 층내의 탄산염 결핵체 주변에서 할로이사이트와 함께 극미립 변질물 (1-2 $\mu\textrm{m}$)로서 산출된다. 알루나이트는 정육면체와 유사한 능면체 결정형을 이루고 침상 내지 단주상의 할로이사이트와 밀접한 공생관계를 이룬다. X-선회절 분석에 의해서 이 알루나이트는 a=6.9897(1) $\AA$, c=17.2327(4)$\AA$, V=728.75(3) $\AA$3의 격자상수값을 갖는 것으로 밝혀졌다. X-선형광된 이 알루나이트의 화학식은 (K0.94N0.06)(Al2.55Fe3+0.45)(SO4)2(OH)6 으로서, 나트로알루나이트 단성분을 6-7 mole%정도 함유하는 것으로 분석되었다. 또한 시차열분석 (TG-DTG-DTA)을 통해서 알루나이트의 승화성 성분들 (H2O와 SO3)의 존재와 함유 정도를 조사하였고, 고온X-선회절분석을 병행하여 이 광물의 OH기의 이탈 반응 (52$0^{\circ}C$)과 고온상으로의 전이 반응 ($600^{\circ}C$ 및 $700^{\circ}C$)을 감정 하였다. K/Ar 법으로 측정된 알루나이트의 생성 연대 ($0.342\pm$0.008 Ma)와 안정동위원소들의 분석 결과 ($\delta$18Oso4=-1.7, $\delta$DSMOW=-31, $\delta$34S=-10.8)는 이 알루미늄 황산염 광물이 연일충군의 융기 이후에 야기된 민물의 유입에 의한 표성기원의 변질작용의 결과로 생성되었음을 지시한다. 알루나이트+할로이사이트 공생군의 침전은 이암 내에서 조성된 강산성 (pH=2-3)의 알루미늄 황산염 용액이 탄산염 결핵체를 만나 반응하여 pH가 국지적으로 증가되어 (pH=4) 과포화되는 과정에 의해서 야기되었다. 컴퓨터를 이용한 Al3+의 포화지수에 관한 화학적 평형 모델링 실험 결과, 알루미늄 황산염 용액으로부터의 알루나이트와 할로이사이트의 침전은 pH=4 및 \ulcornerSO42-=10-4M 조건에서 K+과 Si(OH)4의 농도가 10-4M 이상 유지되어야 가능한 것으로 밝혀졌다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.51-51
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• 2008

Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.48-56
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• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Economic and Environmental Geology
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• v.29 no.4
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• pp.411-419
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• 1996

The Janggun magnetite deposits occur as the lens-shaped magnesian skarn, magnetite and base-metal sulfide orebodies developed in the Cambrian Janggun Limestone Formation. The K-Ar age of alteration sericite indicates that the mineralization took place during late Cretaceous age (107 to 70 Ma). The ore deposition is divided into two stages as a early skarn and late hydrothermal stage. Mineralogy of skara stage (107 Ma) consists of iron oxide, base-metal sulfides, Mg-Fe carbonates and some Mg- and Ca-skarn minerals, and those of the hydrothermal stage (70 Ma) is deposited base-metal sulfides, some Sb- and Sn-sulfosalts, and native bismuth. Based on mineral assemblages, chemical compositions and thermodynamic considerations, the formation temperature, $-logfs_2$, $-logfo_2$ and pH of ore fluids progressively decreased and/or increased with time from skarn stage (433 to $345^{\circ}C$, 8.8 to 9.9 atm, 29.4 to 31.6 atm, and 6.1 to 7.2) to hydrothermal stage (245 to $315^{\circ}C$, 11.2 to 12.3 atm, 33.6 to 35.4 atm, and 7.3 to 7.8). The ${\delta}^{34}S$ values of sulfides have a wide range between 3.2 to 11.6‰. The calculated ${\delta}^{34}S_{H_2S}$ values of ore fluids are relatively homo-geneous as 2.9 to 5.4‰ (skam stage) and 8.7 to 13.5‰ (hydrothermal stage), which are a deep-seated igneous source of sulfur indicates progressive increasing due to the mixing of oxidized sedimentary sulfur with increasing paragenetic time. The ${\delta}^{13}C$ values of carbonates in ores range from -4.6 to -2.5‰. Oxygen and hydrogen isotope data revealed that the ${\delta}^{38}O_{H_2O}$ and ${\delta}D$ values of ore fluids decreased gradually with time from 14.7 to 1.8‰ and -85 to -73‰ (skarn stage), and from 11.1 to -0.2‰ and -87 to -80‰ (hydrothermal stage), respectively. This indicates that magmatic water was dominant during the early skarn mineralization but was progressively replaced by meteoric water during the later hydrothermal replacement.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.111.2-111.2
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• 2015

Typical electrodes (metal or indium tin oxide (ITO)), which were used in conventional organic light emitting devices (OLEDs) structure, have transparency and conductivity, but, it is not suitable as the electrode of the flexible OLEDs (f-OLEDs) due to its brittle property. Although Graphene is the most well-known alternative material for conventional electrode because of present electrode properties as well as flexibility, its carrier injection barrier is comparatively high to use as electrode. In this work, we performed plasma treatment on the graphene surface and alkali metal doping in the organic materials to study for its possibility as anode and cathode, respectively. By using Ultraviolet Photoemission Spectroscopy (UPS), we investigated the interfaces of modified graphene. The plasma treatment is generated by various gas types such as O2 and Ar, to increase the work function of the graphene film. Also, for co-deposition of organic film to do alkali metal doping, we used three different organic materials which are BMPYPB (1,3-Bis(3,5-di-pyrid-3-yl-phenyl)benzene), TMPYPB (1,3,5-Tri[(3-pyridyl)-phen-3-yl]benzene), and 3TPYMB (Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane)). They are well known for ETL materials in OLEDs. From these results, we found that graphene work function can be tuned to overcome the weakness of graphene induced carrier injection barrier, when the interface was treated with plasma (alkali metal) through the value of hole (electron) injection barrier is reduced about 1 eV.

• Korean Journal of Agricultural Science
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• v.16 no.2
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• pp.163-168
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• 1989

Fourty-four isolates showed acetylene-reducing(nitrogenase)activity under the atmosphere of 89% Ar, 10% $C_2H_2$ and 1 % $O_{2{\cdot}}$, these nitrogen-fixing isolates characterized chemotaxonomically and their taxonomic status was disscussed; twenty-three isolates corresponded to Azospirillum. They were curved/spiral rods, gram negative, motile by a polar flagellum, and also utilized glucose in nitrogen free medild by a polar flagellum, and also utilized glucose in nitrogen free medium. but the cellular fatty acid composition and quinone system of these isolates showed quite different characteristics with reference strains. Therefore, the taxonomic status of this nitrogen-fixing bacteria is disscussed and a new species Azospirillum. Sixty forur isolates utilized C-l compounds such as methanol and formic acid. phenotypic and chemotaxonomic characteristics of methanol utilizing isolates were investigated and their taxonomic status was discussed; Twenty-one isolates corresponded to Hyphomicrobium and for the other regular rods and irregular rods utilizing isolates showed different cellular fatty acid composition. These isolates were grouped into 8 cluster analysis and similarity values based on correlation coefficients. Among these 8 clusters, two corresponded Pseudomonas and for the other were not decided.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.