• Title/Summary/Keyword: $O_2$ partial pressure

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High-$J_c$ $GdBa_2Cu_3O_y$ films on $BaHfO_3$ buffered IBAD MgO template ($BaHfO_3$ 완충층을 사용한 IBAD MgO 기판 위에 제조된 고임계전류밀도의 $GdBa_2Cu_3O_y$ 박막)

  • Ko, K.P.;Lee, J.W.;Ko, R.K.;Moon, S.H.;Oh, S.S.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.13 no.1
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    • pp.6-11
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    • 2011
  • The $BaHfO_3$ (BHO) buffer layer on the IBAD MgO template was turned to be effective for a successful fabrication of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films with high critical current density ($J_c$). Both the BHO buffer layers and GdBCO films were prepared by pulsed laser deposition (PLD). The effects of the PLD conditions, including substrate temperature ($T_s$), oxygen partial pressure ($PO_2$), and deposition time on the in-plane texture, surface roughness, and microstructures of the BHO buffer layers on the IBAD MgO template were systematically studied for processing optimization. The c-axis oriented growth of BHO layers was insensitive to the deposition temperature and the film thickness, while the in-plane texture and surface roughness of those were improved with increasing $T_s$ from 700 to $800^{\circ}C$. On the optimally processed BHO buffer layer, the highest $J_c$ value (77 K, self-field) of 3.68 $MA/cm^2$ could be obtained from GdBCO film deposited at $780^{\circ}C$, representing that BHO is a strong candidate for the buffer layer on the IBAD MgO template.

Peculiarities of ReBaCuO superconductor preparation

  • Fan, Zhanguo;Soh, Dea-Wha;Li, Ying-Mei;Park, Jung-Cheol;Korobova, N
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.913-916
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    • 2001
  • From 1994 the cooperation between NEU of China and MJU of South Korea for study of ReBaCuO (Re=Rare earth elements) superconductors has been carried out. The progress has been got in following projects. Critical current density ($J_c$) of YBaCuO superconductor prepared by Melting Textured Growth (MTG) was improved. In the preparation of textured YBaCuO, 20 wt.% of YBaCuO 211 phase was added, which would be climactic for the microcracks in the textured YBaCuO. The effects of the 211 phase and Ag content on the superconductivity were studied and discussed in detail. The improved $J_c$ value was reached to 8$\times$10^4 A/cm^2 (77K,0T). Single phase $YbBa_{2}Cu_{3}O_{x}$ superconductor was sintered by the traditional powder metallurgical method, and its reaction process was studied. In recent years, NdBaCuO superconductor is being performed. The behavior of $Nd_{4}Ba_{2}Cu_{2}O_{10}$(Nd422 phase) and the solid solubility, x in the superconductor $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ by the heat treatment in the low oxygen partial pressure (1%) or Ar at $950{\circ}C$ were investigated. The zone-melting process was used to make oriented NdBaCuO superconductor in order to increase the critical current density.

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Decomposition Reaction of Methanol over Ni-Cu/SiO$_2$Catalyst (Ni-Cu/SiO$_2$촉매 상에서의 메탄올 분해 반응)

  • 박지영;문승현;윤형기;박성룡;이상남;정승용
    • Journal of Energy Engineering
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    • v.5 no.1
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    • pp.65-71
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    • 1996
  • Decomposition reaction of methanol was conducted on Ni-Cu/SiO$_2$catalysts with several variables. Variables used in this study are S.V(Space Velocity), partial pressure of methanol, reaction temperature, and composition rate of Ni-Cu. The range of S.V is 10,000-30,000h$\^$-1/, the temperature range is 150-400$^{\circ}C$ and values of Cu/(Ni+Cu) are 0, 0.25, 0.5, 0.75, and 1. Over Ni/SiO$_2$, and Ni-Cu/SiO$_2$, the conversion rate of decomposition reaction of methanol arrived at 100% with increasing of temperature. At this time the selectivity of CO on Ni/SiO$_2$, was suddenly decreased, but on Ni-Cu/SiO$_2$, it was still sustained highly. The main products of reaction were CO and H$_2$, and by-products were CO$_2$ and CH$_4$mainly.

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Production of Hydrogen from Methane Using a 3 Phase AC Glidarc Discharge (3상 교류 부채꼴 방전을 이용한 메탄으로부터 수소 생산)

  • Kim, Seong-Cheon;Chun, Young-Nam
    • Journal of Hydrogen and New Energy
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    • v.18 no.2
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    • pp.132-139
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    • 2007
  • Popular techniques for producing synthesis gas by converting methane include steam reforming and catalyst reforming. However, these are high temperature and high pressure processes limited by equipment, cost and difficulty of operation. Low temperature plasma is projected to be a technique that can be used to produce high concentration hydrogen from methane. It is suitable for miniaturization and for application in other technologies. In this research, the effect of changing each of the following variables was studied using an AC Glidarc system that was conceived by the research team: the gas components ratio, the gas flow rate, the catalyst reactor temperature and voltage. Glidarc plasma reformer was consisted of 3 electrodes and an AC power source. And air was added for the partial oxidation reaction of methane. The result showed that as the gas flow rate, the catalyst reactor temperature and the electric power increased, the methane conversion rate and the hydrogen concentration also increased. With $O_2/C$ ratio of 0.45, input flow rate of 4.9 l/min and power supply of 1 kW as the reference condition, the methane conversion rate, the high hydrogen selectivity and the reformer energy density were 69.2%, 36.2% and 35.2% respectively.

Polycrystalline $Y_{3}Fe_{5}O_{12}$ Garnet Films Grown by a Pulsed Laser Ablation Technique (엑시머 레이저 증착기술에 의한 $Y_{3}Fe_{5}O_{12}$ 다결정 박막 제조)

  • Yang, C.J.;Kim, S.W.
    • Journal of the Korean Magnetics Society
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    • v.4 no.3
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    • pp.214-218
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    • 1994
  • $Y_{3}Fe_{5}O_{12}$ based garnet films(thin or thick) offer a great promise for the application of microwave communication components. We investigated the magnetic and crystallographic preperties of $Y_{3}Fe_{5}O_{12}$ thick films prepared by KrF eximer laser ablation of a stoichiometric garnet target. It was possible to obtain almost epitaxially oriented films on $Al_{2}O_{3}$(1102) plane. Although the crystalline quality depends on substrate temperature and $O_{2}$ partial pressure used($Po_{2}$), 4.1m thick films of $4{\pi}M_{s}=1300$ Gauss and $H_{c}=37.5$ Oe were obtained at the substrate temperature of $700^{\circ}C$ with the $Po_{2}$ of 100 mTorr after annealing the as-deposited films at $700^{\circ}C$ for 2 hours. These films are expected to be used for magnetostatic spin wave filters at narrow bandwidth frequency.

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XPS study of NiO Growth on Ag(100) (Ag(001)에 성장된 NiO 극초박막의 화학 결함 연구)

  • Yang, Seol-Un;Seong, Shi-Jin;Kim, J.S.;Hwang, Han-Na;Hwang, C.C.;Chang, Young J.;Park, Soo-Hyon;Min, H.G.
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.311-321
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    • 2007
  • We have researched the chemical defects of NiO ultrathin films grown on Ag(001) by x-ray photoelectron spectroscopy. In particular, O 1s and Ni 2p spectra were analyzed consistently with control film thickness, $O_2\;and\;H_2O$ partial pressure and substrate temperature. As a result, we could identify each chemical defect. In addition, we suggest the optimum growth condition to minimize the defect density.

Fabrication of SmBCO coated conductor using $CeO_2$ single buffer layer ($CeO_2$ 단일 완충층을 이용한 SmBCO 초전도테이프 제조)

  • Kim, T.H.;Kim, H.S.;Oh, S.S.;Yang, J.S.;Ko, R.K.;Ha, D.W.;Song, K.J.;Ha, H.S.;Jung, K.D.;Pa, K.C.;Cho, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.261-262
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    • 2006
  • High temperature superconducting coated conductor has multi-layer structure of protecting layer/superconducting layer/buffer layer/metallic substrate. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is $CeO_2$(cap layer)/YSZ(diffusion barrier layer)/$CeO_2$(seed layer). Multi-buffer layer deposition required many times and process. Therefore single buffer layer deposition study reduce 2G HTS manufacture efforts. Evaporation technique for single buffer deposition method is used for the $CeO_2$ layer. $CeO_2$ single buffer film could be achieved in the chamber. Detailed deposition conditions (temperature and partial gas pressure of deposition) were investigated for the rapid growth of high quality $CeO_2$ single buffer film.

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The effect of step heat treatment in the critical current density of BSCCO 2223 tapes (BSCCO 2223선재의 임계전류밀도에 영향을 미치는 단계별 열처리의 효과)

  • 박성창;유재무;고재웅;김영국;김철진
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.90-93
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    • 2002
  • The sintering process of BSCCO 2223 tapes is a complex process that is very sensitive to parameters, such as temperature, oxygen partial pressure, heating and cooling rate and holding time. During the first heat treatment, 2212 phase of precursor powder is partially transformed into 2223 phase and some residual secondary phases, such as $(Bi,Pb)_2$$Sr_2$CuO/sub y/(2201), $(Ca,Sr)_2$CuO/sub y/(2/1AEC), (Ca,Sr)/sub 14/Cu/sub 24/O/sub 41/(14/24 AEC) etc. The secondary phases are difficult to be removed from the BSCCO 2223 matrix on the heat treatment. These secondary phases degrade the critical current density. In order to minimize the amount and size of alkaline earth cuprate(AEC) particles step heat treatment is applied during the first heat treatment under the varying atmosphere. Experimental results showed that by adapting the step heat treatment process, the amount and particle size of the secondary phases in the final tapes are decreased. Consequently, the BSCCO 2223grain texture and Jc properties are improved.

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Production of Hydrogen from Methane by 3phase AC GlidArc Plasma (3상 교류 부채꼴 방전을 이용한 메탄으로부터 수소 생산)

  • Chun, Young-Nam;Kim, Seong-Cheon;Lim, Mun-Seup
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2232-2237
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    • 2007
  • Steam reforming and catalytic reforming of $CH_4$ conversion to produce synthesis gas require both high temperatures and high pressure. Non-thermal plasma is considered to be a promising technology for the hydrogen rich gas production from methane. In this study, three phase AC GlidArc plasma system was employed to investigate the effects of gas composition, gas flow rate, catalyst reactor temperature and applied electric power on the $CH_4$ and $H_2$ yield and the product distribution. The studied system consisted of three electrode and it connected AC generate power system different voltages. In this study, air was used for the partial oxidation of methane. The results showed that increasing gas flow rate, catalyst reactor temperature, or electric power enhanced $CH_4$ conversion and $H_2$ concentration. The reference conditions were found at a $O_2$/C molar ratio of 0.45, a feed flow rate of 4.9 ${\ell}$/min, and input power of 1kW for the maximum conversions of $CH_4$ with a high selectivity of $H_2$ and a low reactor energy density.

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Cation Self-Diffusin and Impurity Diffusion of Mn and Zn in CoO: (I) A comparison of the Residual Activity and the Tracer Sectioning Method

  • Lee, Jong-Ho;Martin, Manfred
    • The Korean Journal of Ceramics
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    • v.4 no.2
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    • pp.90-94
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    • 1998
  • Self diffusion coefficients of $^{67}$Co and impurity diffusion coefficients of $^{51}$Mn and $^{65}$Zn in single crystalline CoO have been measured by applying different radioactive isotopes simultaneously. To compare the residual activity method and the tracer sectioning method we analyzed our tracer diffusion experiments by using both methods simultaneously. According to our experimental results, the diffusion coefficients obtained from both methods are identical within experimental error, demonstrating the relibility of our experimental procedures. The diffusion coefficients of all the isotopes obtained during these test experiments for the methodology are similar in magnitude and show similar dependences on oxygen partial pressure. These first observations indicate that impurity diffusion of Mn and Zn occur via a vacancy mechanism as known for self diffusion of cobalt.

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