• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.37-42
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• 1996

ZnO films have been deposited on oxide grown Si wafers by the conventional thermal evaporation method. Anhydrous zinc acetate was directly heated and sublimed in the laboratory-made brass boat. The substrates temperature varied from $200^{\circ}C$ to $600^{\circ}C$. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. The films deposited at high oxygen pressure exhibited higher resistivity than films at low pressure. X-Ray Diffraction(XRD), Energy Dispersive Spectroscopy(EDS) and Rutherford Backscattering Spectrometry (RBS) were conducted on the films to reveal the crystallinity and composition of the ZnO films. The ZnO films deposited at high oxygen pressure were extremly sensitive to the humidity of higher than 70 % RH.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.136-140
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• 1998

This work demonstrates a method for modeling of electrical conductivity in high-temperature proton-conducting oxides. Total conductivity was calculated assuming that it comprises partial conductivities contributed by protons, oxygen ions and electron holes. From the polt $\sigma_{tot}$ vs. $po_2\;{1/4}$ in wet atmosphere, thermodynamic and kinetic parameters were obtained representing transport properties such as concentration and mobility of the charge-carrying defects. The formulas for the calculation of partial conduction were derived based on the defect structure of HTPCs. Illustrative calculation were made for $SrCe_{0.95}Yb_{0.05}O_{2.975}$ system.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.111-115
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• 2000

$BaTIO_3$ thin films were prepared on (100) $BaTIO_3$ substrates by coating- pyrolysis process using metal-organic compounds of Ba and Ti. The amorphous films prefired at $450^{\circ}C$were crystallized above $700^{\circ}C$ under oxygen partial pressure of $2\times 10^{-4}$. The lattice parameters of the perpendicular axis for the $BaTIO_3$ thin films heat-treated below $800^{\circ}C$ were closer to a value of cubic $BaTIO_3$, whereas those above $800^{\circ}C$ were closer to a value of tetragonal BaTiG. The results of XRD P scan and pole-figure analyses indicated that BaTiO, thin films have an epitaxial relationship with the $SrTiO_3$ substrates. The $BaTIO_3$thin films annealed at$800^{\circ}C$ showed the surface with island-like grains about 0.4$mu \textrm{m}$ and the cross section of 0.8 $mu \textrm{m}$ thickness with granular grains.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.235-239
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• 1998

Ultrafine $SnO_2$ powder was prepared by the diffusion mixing gas-phase reaction of $SnCl_4$(g) and water vapor. The effects of reaction variables, such as the chloride partial pressure, the reaction temperature, and the residence time is the reactor, on the powder size were examined systematically. Calculated concentration and distribution of chemical species, using the Burke-Schumann diffusion mixing model, were compared with the experimetal results. The effects of the reaction variables on the powder size were also discussed qualitatively.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.484-489
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• 1995

The synthesis of new bismuth-barium containing members of layered cuprates with 2201 type structure was reported. By solution calorimetry the formation enthalpies for Bi2MLaCuO6.5 (M=Ba, Ba0.5Sr0.5, Sr) were obtained. Crucial influence of partial oxygen pressure and size of lanthanoid on stability of layered cuprates was shown. Electronic states of variable valence atoms were studied by voltammetry of solids.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.409-414
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• 1999

The influence of ion beam energy and reactive oxygen partial pressure on the electrical and crystallographic characteristics of transition metal oxide compound(Cr0x) film was studied in this paper. Chromium oxide films were prepared onto the coverglass using Ion Beam Sputter Deposition(1BSD) technique according to the processing conditions of the partial pressure of reactive oxygen gas and ion beam energy. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. As results, according to the XRD, XPS and resistivity measurement, the deposited films were the cermet type films which has a crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increasernent of the ion b m energy during the deposition process happened to decreasernent of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.91-94
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• 2002

Textured Ce$O_{2}$ buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition The texture of deposited Ce$O_{2}$ films was varied with deposition temperature(T) and oxygen partial pressure($Po_{2}$). ($\ell$ 00) textured Ce$O_{2}$ films were deposited at T= 500~$520^{\circ}C$, $Po_{2}$= 0.90~3.33 Torr. The growth rate of the Ce$O_{2}$ films was 150~200 nm/min at T= $520^{\circ}C$ and $Po_{2}$= 2.30 Torr, which was much faster than that prepated by other physical deposition method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.70-73
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• 2002

Thin films of vanadium oxide($VO_{x}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure, chemical composition, molecular structure and optical properties of films sputter-deposited under different oxygen gas pressures and in-situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD. RBS, FTlR and optical absorption measurements. The films as-deposited are amorphous and those annealed for time longer than 4h are polycrystalline. $V_{2}O_{5}$ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric $V_{2}O_{5}$. When annealed at $400^{\circ}C$, the as-deposited films are reduced to a lower oxide. It is observed that the oxygen atoms located on the V-O plane of $V_{2}O_{5}$ layer participate more readily in the oxidation and reduction process. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly between 400 and 550nm.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.67-68
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• 2007

마그네트론 스퍼터링을 이용하여 사파이어 기판위에 $O_2$의 분압에 따른 성장된 ZnO박막의 특성에 대해 연구하였다. $O_2$의 분압은 $Ar/O_2$의 비율에 의해 조절을 하여 성장을 하였으며, $O_2$의 분압이 감소함에 따라 결정성이 좋아지는 결과를 얻었다. PL측정결과에서 순수한 Ar분위기에서 성장된 ZnO박막에서 UV 발광과 더불어 Deep 1evel에 기인하는 Green 발광을 보였고, UN-Visible spectroscopy 측정결과 순수한 Ar분위기를 제외한 샘플에서 $60{\sim}80%$의 투과도를 보였다. SEM과 TEM의 이미지를 통해 미세 힐락들을 관찰되었는데, 이로 인해 투과도의 저하 원인으로 분석된다.