• Title/Summary/Keyword: $O_2$ Sensor

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NO Gas Sensing Characteristics of Layered Composites of Carbon Nanotubes Coated with Al-Doped ZnO (탄소나노튜브를 알루미늄이 첨가된 산화아연으로 코팅한 층상 복합체의 일산화질소 가스 감지 특성)

  • Ahn, Eun-Seong;Jung, Hoon-Chul;Nguyen, Nguyen Le;Oh, Dong-Hoon;Kim, Hyo-Jin;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.19 no.11
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    • pp.631-636
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    • 2009
  • We investigated the NO gas sensing characteristics of ZnO-carbon nanotube (ZnO-CNT) layered composites fabricated by coaxial coating of single-walled CNTs with a thin layer of 1 wt% Al-doped ZnO using rf magnetron sputtering deposition. Morphological studies clearly revealed that the ZnO appeared to form beadshaped crystalline nanoparticles with an average diameter as small as 30 nm, attaching to the surface of the nanotubes. It was found that the NO gas sensing properties of the ZnO-CNT layered composites were dramatically improved over Al-doped ZnO thin films. It is reasoned from these observations that an increase in the surface-to-volume ratio associated with the numerous ZnO “nanobeads” on the surface of the CNTs results in the enhancement of the NO gas sensing properties. The ZnO-CNT layered composite sensors exhibited a maximum sensitivity of 13.7 to 2 ppm NO gas at a temperature of 200${^{\circ}C}$ and a low NO gas detection limit of 0.2 ppm in dry air.

Dielectric and piezoelectric properties of 0.96(Na0.5K0.5)NbO3-0.04(Ba(1-x)Srx)TiO3 lead-free ceramics (0.96(Na0.5K0.5)NbO3-0.04(Ba(1-x)Srx)TiO3 무연 세라믹스의 유전 및 압전 특성)

  • Kim, Mi-Ro;Yoon, Seok-Jin;Choi, Ji-Won
    • Journal of Sensor Science and Technology
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    • v.19 no.2
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    • pp.155-159
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    • 2010
  • 0.96$(Na_{0.5}K_{0.5})NbO_3$-0.04$(Ba_{(1-x)}Sr_x)TiO_3$ lead free piezoelectric ceramics were synthesized to enhance the piezoelectric properties of (Na,K)$NbO_3$. The systhesis and sintering method were the conventional solid state reaction method and general sintering method in air atmosphere. The polymorphic phase transition(PPT) was observed at all composition(0 $\leq$ x $\leq$ 0.05) when $(Ba_{(1-x)}Sr_x)TiO_3$ were added in the $(Na_{0.5}K_{0.5})NbO_3$. As Sr concentration was increased, grain size, dielectric loss(tan$\delta$) and mechanical quality factor($Q_m$) were decreased and piezoelectric constant($d_{33}$) and electromechanical coupling factor($k_p$) were increased within a limited value. The optimized piezoelectric and properties, $d_{33}$, $k_p$, $Q_m$, and tand, of 0.96$(Na_{0.5}K_{0.5})NbO_3$-0.04$(Ba_{(1-x)}Sr_x)TiO_3$ were 139 pC/N, 0.31 %, 95, 0.04 at the composition of x=0.04.

Structure and Electrical Properties of 0.85NaNbO3-0.15LiNbO3 Ceramics (0.85NaNbO3-0.15LiNbO3 세라믹스의 구조 및 전기적 특성)

  • Jeon, Chang Jun;Jeong, Young Hun;Yun, Ji Sun;Nam, Joong Hee;Paik, Jong Hoo;Cho, Jeong Ho
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.105-109
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    • 2014
  • Structure and electrical properties of $0.85NaNbO_3-0.15LiNbO_3$ ($(Li_{0.15}Na_{0.85})NbO_3$) ceramics were investigated as a function of sintering temperature. $(Li_{0.15}Na_{0.85})NbO_3$ ceramics were prepared by conventional solid state processing. A main phase of the orthorhombic perovskite structure and secondary phase of $LiNbO_3$ were confirmed for all sintered specimens. Dense $(Li_{0.15}Na_{0.85})NbO_3$ ceramics were obtained at sintering temperature above $1050^{\circ}C$. With increasing sintering temperature, the electromechanical coupling factor ($k_p$), piezoelectric constant ($d_{33}$) and relative dielectric constant (${\varepsilon}_r$) of the sintered specimens increased, while the mechanical quality factor ($Q_m$) decreased. These results are due to the increase of grain size and crystallite size of orthorhombic perovskite structure. Based on the temperature dependence of ${\varepsilon}_r$, stable piezoelectric properties were expected because no phase transition found up to $300^{\circ}C$. Typically, kp of 18%, $d_{33}$ of 34.7 pC/N, ${\varepsilon}_r$ of 135, and $Q_m$ of 62.8 were obtained for the specimens sintered at $1200^{\circ}C$ for 5 h.

Preparation of ZnO Powders by Hydrazine Method and Its Sensitivity to C2H5OH (하이드라진 방법에 의한 ZnO 미분말의 합성 및 에탄올 감응성)

  • Kim, Sun-Jung;Lee, Jong-Heun
    • Korean Journal of Materials Research
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    • v.18 no.11
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    • pp.628-633
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    • 2008
  • ZnO nanopowders were synthesized by the sol-gel method using hydrazine reduction, and their gas responses to 6 gases (200 ppm of $C_2H_5OH$, $CH_3COCH_3$, $H_2$, $C_3H_8$, 100 ppm of CO, and 5 ppm of $NO_2$) were measured at $300\;{\sim}\;400^{\circ}C$. The prepared ZnO nanopowders showed high gas responses to $C_2H_5OH$ and $CH_3COCH_3$ at $400^{\circ}C$. The sensing materials prepared at the compositions of [$ZnCl_2$]:[$N_2H_4$]:[NaOH] = 1:1:1 and 1:2:2 showed particularly high gas responses ($S\;=\;R_a/R_g,\;R_a$ : resistance in air, $R_g$ : resistance in gas) to 200 ppm of $C_2H_5OH$($S\;=\;102.8{\sim}160.7$) and 200 ppm of $CH_3COCH_3$($S\;= 72.6{\sim}166.2$), while they showed low gas responses to $H_2$, $C_3H_8$, CO, and $NO_2$. The reason for high sensitivity to these 2 gases was discussed in relation to the reaction mechanism, oxidation state, surface area, and particle morphology of the sensing materials.

The Hall Measurement and TMA Gas Detection of ZnO-based Thin Film Sensors (ZnO 박막 센서의 TMA 가스 및 Hall 효과 측정)

  • Ryu, Jee-Youl;Park, Sung-Hyun;Choi, Hyek-Hwan;Lee, Myong-Kyo;Kwon, Tae-Ha
    • Journal of Sensor Science and Technology
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    • v.6 no.4
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    • pp.265-273
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    • 1997
  • The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigate the surface carrier concentration, Hall electron mobility, electrical resistivity and sensitivity according to temperature variation and TMA gas concentration. The ZnO-based thin film sensors prepared by sputtering in oxygen showed higher surface carrier concentration, higher Hall mobility, higher sensitivity, and lower electrical resistivity than sensors prepared by sputtering in argon. The doping ZnO-based thin film sensors showed the same electrical properties in comparison with nondoping sensors. In case of sputtering on the oxygen gaseous atmosphere, the ZnO-based thin film sensors doped with 4.0 wt.% $Al_{2}O_{3}$, 1.0 wt.% $TiO_{2}$, and 0.2 wt.% $V_{2}O_{3}$ showed the highest surface carrier concentration of $5.95{\times}10^{20}cm^{-3}$, Hall electron mobility of $177\;cm^{2}/V{\cdot}s$, lowest electrical resistivity of $0.59{\times}10^{-4}{\Omega}{\cdot}cm$ and highest sensitivity of 12.1(working temperature, $300^{\circ}C$, TMA gas, 8 ppm).

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Characteristics of thick film Co2 sensors attached with Na2CO3-CaCO3 auxiliary phases (Na2CO3-CaCO3 보조상을 사용한 후막형 Co2 센서의 특성연구)

  • Shim, H.B.;Choi, J.W.;Kang, J.H.;Yoo, K.S.
    • Journal of Sensor Science and Technology
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    • v.15 no.3
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    • pp.168-172
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    • 2006
  • Potentiometric $CO_{2}$ sensors were fabricated using a NASICON ($Na_{1+x}Zr_{2}Si_{X}P_{3-X}O_{12}$, 1.8 < x < 2.4) thick film and auxiliary layers. The powder of a precursor of NASICON with high purity was synthesized by a sol-gel method. By using the NASICON paste, an electrolyte was prepared on the alumina substrate by screen printing and then sintered at $1000^{\circ}C$ for 4 h. A series of $Na_{2}CO_{3}-CaCO_{3}$ auxiliary phases were deposited on the Pt sensing electrode. The electromotive force (emf) values were linearly dependent on the logarithm of $CO_{2}$ concentration in the range between 1,000 and 10,000 ppm. The device attached with $Na_{2}CO_{3}-CaCO_{3}$ (1:2 in mol.%) showed good sensing properties in the low temperatures.

센서 통합 능력을 갖는 다중 로봇 Controller의 설계 기술

  • 서일홍;여희주;엄광식
    • ICROS
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    • v.2 no.3
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    • pp.81-91
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    • 1996
  • 이 글에서는 Multi-Tasking Real Time O.S인 VxWorks를 기본으로 하여 다중센서 융합(Multi-Sensor Fusion) 능력을 갖는 다중 로봇 협조제어 시스템의 구현에 대하여 살펴보았다. 본 제어 시스템은 두대 로봇의 제어에 필요한 장애물 회피, 조건 동작(Conditional Motion) 혹은 동시동작(Concurrent Motion)과 외부 디바이스와의 동기 Motion(Conveyor Tracking)을 수행할 수 있게 구현하였고, 몇몇 작업을 통해 우수성을 입증하였다. 앞으로 본 연구와 관련한 추후 과제로는 1) 자유도가 6관절형인 수직다관절 매니퓰레이터를 위한 충돌회피 알고리즘의 개발, 2) Two Arm Robot의 상대 위치를 위한 Auto-Calibration 시스템의 개발, 3) CAD Based Trajectory 생성 등이 있다.

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Material and Sensing Properties of SnO2 prepared by Sol-Gel Methods (Sol-Gel법에 의한 SnO2의 물성 및 센싱 특성)

  • Park, Bo-Seok;Hong, Kwang-Joon;Kim, Ho-Gi;Park, Jin-Seoung
    • Journal of Sensor Science and Technology
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    • v.11 no.6
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    • pp.327-334
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    • 2002
  • Fine particles of $SnO_2$ were fabricated by the sol-gel powder processing using tine(II) chloride dihydrate($SnCl_2{\cdot}2H_2O$) and ethanol($C_2H_5OH$) as raw materials. The powders were investigated about the properties and electrical sensing. Gel powders were fabricated by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_2$ phase was increased below $600^{\circ}C$ due to the elimination of volatile components, and the $SnO_2$ phase was almost completed by the heat treatment at $700^{\circ}C$ for 30min. The grain sizes were about 30nm below $700^{\circ}C$, and it showed the narrow distribution of the grain sizes. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_2$ was showed the intrinsic behaviour of semiconducting ceramics above at $450^{\circ}C$. The constant conductance was observed in the temperature range of $200{\sim}450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

Wet-etching Properties of GaAs Using $NH_4OH-H_2O_2-H_2O$ Mixed Solution and Its Application to Fabrication Method for Released GaAs Microstructures with Rectangular Cross Section ($NH_4OH-H_2O_2-H_2O$ 혼합액을 이용한 GaAS의 습식식각 특성 연구 및 이를 이용한 부유된 사각형 단면을 가지는 GaAs 미세구조물의 제작 방법)

  • Kim, Jong-Pal;Park, Sang-Jun;Paik, Seung-Joon;Kim, Se-Tae;Koo, Chi-Wan;Lee, Seung-Ki;Cho, dong-Il
    • Journal of Sensor Science and Technology
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    • v.10 no.5
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    • pp.304-313
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    • 2001
  • In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

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