• Title/Summary/Keyword: $O_2$ Sensor

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Trickling Performance of Individual Watering System with Variety, Thickness and Firing Temperature of Ceramic (세라믹 종류, 두께 및 소성온도에 따른 식물개체제어형 세라믹 자동점적관수시스템의 점적성능)

  • 양원모
    • Journal of Bio-Environment Control
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    • v.8 no.4
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    • pp.257-264
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    • 1999
  • The trickling system for automatic and individual watering were made with Bunchungto, Ongito and Backjato. The thickness of ceramics were 1.0, 1.5, 2.0, 2.5 and 3.0mm. And they were fired in a muffle furnace at five different temperatures between 500 and 900'E during 12 hours. The upper plastic parts of sensor consisted of five elements made by steel mold. With the photo fiber sensor attached to datalogger, an accumulated amount of drops for every 10 minutes were recorded. The porosity is higher in the order of Bunchungto, Backjato and Ongito; also, as the firing temperature is higher and the thickness is thicker, the porosity is higher. The ceramic sensors consisted of $SiO_2$ of 54.17~71.62wt.%, A1$_2$ $O_3$ of 15.42~33.79wt.% and the rest of 10wt.%, those were Fe$_2$ $O_3$, CaO, MgO, Na$_2$O, $K_2$O, Ti $O_2$, P$_2$ $O_{5}$. The pattern of dropping were changed according to the variety, thickness and firing temperature of ceramics. As the ceramics were made thicker, the fluctuation of dropping became more rapid, but it did not regularly work at 1mm thickness. As the firing temperature of ceramics became higher, the fluctuation of dropped amount became more rapid.

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Effect of Ultra-thin Catalyst Deposited upon $In_2O_3$ Thin Film on CO Sensitivity ($In_2O_3$ 박막위에 증착된 초박막 촉매가 CO의 검출 감도에 미치는 영향)

  • Lee, Hye-Jung;Song, Jae-Hoon;Kwon, Soon-Nam;Kim, Tae-Song;Kim, Kwang-Ju;Jung, Hyung-Jin;Choi, Won-Kook
    • Journal of Sensor Science and Technology
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    • v.9 no.6
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    • pp.430-439
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    • 2000
  • $In_2O_3$-based thin film sensor with 500-600 nm thick was fabricated for the detection of CO gas by rf magnetron sputtering. In order to improve both sensitivity to CO gas and selectivity to hydrogen gas containing -CH, ultra-thin transition metal Co catalyst was sputtered over $In_2O_3$ thin film and annealed at $500^{\circ}C$. Sensitivity to CO was maximum at the thickness of Co 2.1 nm and $300^{\circ}C$, and that to $C_3H_8$ was at the thickness of Co 1.4 nm and $350-400^{\circ}C$. From the x-ray photoelectron spectroscopy (XPS) result, ultra-thin Co was existed into CoO covered with $Co_2O_3$ on $In_2O_3$ particles, and thus p-n junction of $In_2O_3(n-type)$-CoO(p-type) was thought to be formed. In this p-n junction type sensors, sensing mechanism with reducing gases can be explained by the variation of depletion layer thickness formed in the interface.

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The Study on development of a SAW SO$_2$ gas sensor (표면탄성파를 이용한 아황산 가스센서 개발에 관한 연구)

  • Lee, Young-Jin;Kim, Hak-Bong;Roh, Yong-Rae;Cho, Hyun-Min;Baik, Sung;,
    • The Journal of the Acoustical Society of Korea
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    • v.16 no.2
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    • pp.89-94
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    • 1997
  • A new type SO$_2$ gas sensor with a particular inorganic thin film on SAW devices was developed. The sensor consisted of twin SAW oscillators of the center frequency of 54 MHz fabricated on the LiTaO$_3$ piezoelectric single crystal. One delay line of the sensor was coated with a CdS thin film that selectively adsorbed and desorbed SO$_2$, while the other was uncoated for use as a stable reference. Deposition of the CdS thin film was carried out by the spray pyrolysis method using an ultrasonic nozzle. The sensor could measure the concentration in air less than 0.25 parts per million of SO$_2$. Stability of the sensor turned out to be as good as less than 20ppm, recovery time after each measurement was as short as 5 minutes. Repeatability of the measurement was confirmed through so many reiterated experiments. Hence, the SAW sensor developed through this work showed promising performance as a microsensing tool of SO$_2$. Further work required to improve the performance of the sensor includes enhancement of the reactivity of the CdS thin film with SO$_2$ through appropriate dopant addition, an increase of the center frequency of the SAW device.

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Light-activated mechanism for metal oxide gas sensors (금속 산화물 가스 센서의 광 활성화 센싱 메커니즘)

  • Oum, Wansik;Shin, Ka Yoon;Yu, Dong Jae;Kang, Sukwoo;Kim, Eun Bi;Kim, Hyoun Woo
    • Journal of Sensor Science and Technology
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    • v.30 no.6
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    • pp.381-383
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    • 2021
  • Light-activated metal oxide gas sensors have been investigated in recent decades. Light illumination enhances the sensing attributes, including the operational temperature, sensitivity, and selectivity. Unfortunately, high operating temperature is a major problem for gas sensors because of the huge energy consumption. Therefore, the importance of light-activated room-temperature sensing has increased. This paper reviews recent light-activated sensors and their sensing mechanisms with a specific focus on metal oxide gas sensors. Studies use the outstanding ZnO and SnO2 sensors to research photoactivation when illuminated by various sources such as ultraviolet (UV), halogen lamp, or monochromatic light. Photon induction generates electron-hole pairs that increase the number of adsorption sites of gas molecules and ions improving the sensor's sensing properties.

Measurement of Thermo-Optic Coefficient of a Liquid Using a Cascade of Two Different Fiber Bragg Gratings

  • Kim, Kwang Taek;Kim, In Soo
    • Journal of Sensor Science and Technology
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    • v.22 no.2
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    • pp.95-99
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    • 2013
  • We proposed and demonstrated a fiber optic sensor for detecting the thermo-optic coefficient of a liquid, based on a cascade of two different FBGs. One of the two FBGs was etched, and its cladding was removed, for evanescent wave coupling with an external liquid. The Bragg wavelength of the non-etched FBG was used as a reference for the temperature of the surrounding liquid. The refractive index (RI) and thermo-optic (T-O) coefficient of a liquid can be detected from the difference between the Bragg wavelengths of the two FBGs, and the variation of the difference in accordance with temperature.

Sensitivity Analysis of Plasma Charge-up Monitoring Sensor Using Neural Networks

  • Lee, Sung-Joon;Kim, Sun-Phil;Soh, Dae-Wha;Hong, Sang-Jeen
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.303-306
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    • 2005
  • High aspect ration via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via hole, this sophisticated and important process still hold several problems, such as etching stop, loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

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Fabrication and Characteristics of Thick Film Alcohol Gas Sensors (후막형 알코올 센서의 제조 및 특성)

  • Choi Dong-Han
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.387-390
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    • 2004
  • Thick film alcohol gas sensors were fabricated. Their electrical properties and gas sensing characteristics were investigated. The sensitivity of $1wt.\%$ Pd-doped ${\gamma}-Fe_2O_3$ thick film heat treated at $400^{\circ}C$, 2hrs was $74\%$ to 500ppm alcohol gas at the operating temperature of $250^{\circ}C$. The selectivity of the film to alcohol was good. It showed fast response time to low concentrations of alcohol in air, hence this sensor can be used as a breath sensor.

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Epitaxial growth of Tin Oxide thin films deposited by powder sputtering method

  • Baek, Eun-Ha;Kim, So-Jin;Gang, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.185.2-185.2
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    • 2015
  • Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

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Magneto resistance in NiO/NiFe/Cu/NiFe spin-valve Sandwiches (NiO/NiFe/Cu/NiFe 스핀-밸브 샌드위치의 자기저항 특성)

  • 김재욱
    • Electrical & Electronic Materials
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    • v.10 no.10
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    • pp.1016-1021
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    • 1997
  • Magneto resistance properties in spin-valve sandwiches with various thickness of nanmagnetic layer in contact with the ferromagnetic NiFe film were investigated. The NiFe layer in contact with the NiO film was pinned by strongly exchange-biased coupling and the free NiFe layer at the film surface induced a sharp change in the magnetoresistance at -5~15Oe due to small coercivity. The NiO/NiFe/Cu/NiFe film showed a magnetoresistance ratio in the range of 2.3~2.9% and a field sensitivity above 2.2%/Oe with various of nonmagnetic layer. The NiO/NiFe/Cu/NiFe film of the field sensitivity above 2.2%/Oe suggests stang possibility of magnetic sensor matter.

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H2S Gas Sensing Properties of SnO2:CuO Thin Film Sensors Prepared by E-beam Evaporation

  • Sohn, Jae-Cheon;Kim, Sung-Eun;Kim, Zee-Won;Yu, Yun-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.4
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    • pp.135-139
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    • 2009
  • $H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.