• Title/Summary/Keyword: $O_2$ Sensor

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Bio-inspired Cr2O3 and Co3O4 Nanoparticles Loaded Electrospun WO3 Nanofiber Chemical Sensor for Early Diagnosis of Halitosis (고분산성 Cr2O3 및 Co3O4 전이금속 나노입자 촉매가 기능화된 다공성 WO3 나노섬유를 이용한 구취진단용 화학센서)

  • Jang, Ji-Soo;Kim, Sang-Joon;Choi, Seon-Jin;Koo, Won-Tae;Kim, Il-Doo
    • Journal of Sensor Science and Technology
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    • v.25 no.3
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    • pp.223-228
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    • 2016
  • In this work, we prepared porous WO3 nanofibers (NFs) functionalized by bio-inspired catalytic $Cr_2O_3$ and $Co_3O_4$ nanoparticles as highly sensitive and selective $H_2S$ gas sensing layers. Highly porous 3-dimensional (3D) NFs networks decorated by well-dispersed catalyst NPs exhibited superior $H_2S$ gas response ($R_{air}/R_{gas}$ = 46 at 5 ppm) in high humidity environment (95 %RH). In particular, the sensors showed outstanding $H_2S$ selectivity against other interfering analytes (such as acetone, toluene, CO, $H_2$, ethanol). Exhaled breath sensors using $Cr_2O_3$ and $Co_3O_4$ catalysts-loaded $WO_3$ NFs are highly promising for the accurate detection of halitosis.

Charicteristics of PZT-PMNS using for piezoelectric element of AE sensor (AE센서의 압전소자에 이용할 PZT-PMNS 특성)

  • Kwon, O.D.;Yoo, J.S.;Yoon, Y.J.;Kang, S.H.;Lim, K.J.
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1612-1614
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    • 2004
  • The piezoelectric ceramics for AE-sensor are desired large electromechanical coupling factor, high mechanical quality factor and good characteristic resonance frequency. In this study, the empirical formula of specimens is used 0.9Pb$(Zr_xTi_{1-x})O_3-0.1Pb(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$ (PZT-PMNS). The piezoelectric and dielectric characteristic are investigated by sintering temperature and value of x as functions of $Ti^{2+},\;Zi^{2+}$ moi rate. MPB(morphotropic phase boundary) is defned in the x=0.522. Because it is appeared to the best piezoelectric and dielectric characteristic in the x=0.522, it can be application of AE sensor. PZT-PMNS ceramics without pre-amplifier and filter are tested for AE-signal of PD and arc detecting. The detection characteristic is evaluated wave form, frequency distribution.

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A study of piezoelectric element for AE sensor using PZT ceramics (PZT세라믹을 이용한 AE센서의 압전소자 연구)

  • Kwon, O.D.;Yun, Y.J.;Yoo, J.S.;Kang, S.H.;Lim, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05b
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    • pp.173-176
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    • 2004
  • The piezoelectric ceramics for AE sensor piezoelectric devices are desirable to possess higher resonance vibrations. The compositions of $0.9Pb(Zr_xTi_{1-x})O_3-0.1Pb(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$ (PZT-PMNS) in this work are selected for obtaining especially large electromechanical coupling factor, high mechanical quality factor and high Curie temperature. This ceramic has higher piezoelectric activity and higher electromechanical coupling factor, but the ceramic has lower Curie temperature. The piezoelectric and dielectric characteristics of PZT-PMNS ternary system are investigated as functions of $Ti^{2+}$, $Zi^{2+}$ mol rate. As the results, MPB(morphotropic phase boundary) in this piezoelectric ceramic is x=0.522. Resonance vibrations of PZT ceramics are investigated as ball-bearing drop test. For the use of AE sensor that driving with pre-amplifier, filter circuit after packed this ceramic and an elastic body.

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Characteristics of detecting arc of AE sensor for using PZT ceramics (PZT 세라믹을 이용한 AE센서의 아크 검출 특성)

  • Yoo, J.S.;Kwon, O.D.;Yun, Y.J.;Kang, S.H.;Lim, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.515-518
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    • 2004
  • The Piezoelectric ceramics for AE(Acoustic Emission) sensor are desired large electromechanical coupling factor, high mechanical quality factor and good characteristic resonance frequency. In this study, the empirical formula of specimens is used $0.9Pb(Zr_xTi_{1-x})O_3-0.1Pb(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$ (PZT-PMNS). The piezoelectric and dielectric characteristic are investigated by sintering temperature and value of x as functions of $Ti^{2+},\;Zi^{2+}$ mol rate. MPB(morphotropic Phase boundary) is defined in the x=0.522. Because it is appeared to the best piezoelectric and dielectric characteristic in the x=0.522, it can be application by AE sensor. PZT-PMNS ceramics without pre-amplifier and filter are tested for detecting of arc signal. The detection characteristic is evaluated wave form, frequency distribution.

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Ga doped ZnO Thin Films for Gas Sensor Application (Ga이 첨가된 ZnO 박막의 가스센서로의 응용 연구)

  • Hwang, Hyun-Suk;Yeo, Dong-Hun;Kim, Jong-Hee;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.6
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    • pp.499-502
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    • 2008
  • In this work, Ga-doped ZnO (GZO) thin films for gas sensor application were deposited on low temperature co-fired ceramics (LTCC) substrates, by RF magnetron sputtering method. The LTCC substrate is one of promising materials for this application since it has many advantages (e.g., low cost production, high manufacturing yields and easy realizing 3D structure etc.). The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The structural properties of the fabricated GZO thin film with thickness of 50 nm is analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The film shows good adhesion to the substrate. The GZO gas sensors are tested by gas measurement system and show fast response and recovery characteristics to $NO_x$ gas that is 27.2 and 27.9 sec, recpectively.

Analog Front-End Design Techniques and Method for Saturation of Hemoglobin with Oxygen Sensor (센서 기반 헤모글로빈의 산소 포화도 측정을 위한 아날로그 프런트 엔드 설계 기술 및 방법)

  • Park, Sejin;Lee, Hokyu;Park, Jongsun;Kim, Chulwoo
    • Journal of IKEEE
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    • v.18 no.1
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    • pp.172-178
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    • 2014
  • This paper describes the design technique and the method of analog front-end to measure the saturation of hemoglobin with oxygen sensor. To process the $SpO_2$ value from the sensor, the current data from the sensor should be converted into voltage domain. Designed analog front-end usually converts the current data from the sensor into voltage domain data to pass it on analog-to-digital converter called ADC with a different level of gain characteristics. This circuit was fabricated in a $0.11{\mu}m$ CMOS technology and has 4 level of gain properties. The occupied area is $0.174mm^2$.

Multimode fiber-optic pressure sensor based on dielectric diaphragm (유전체 다이아프램을 이용한 다모드 광섬유 압력센서)

  • 김명규;권대혁;김진섭;박재희;이정희;손병기
    • Journal of the Korean Vacuum Society
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    • v.6 no.3
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    • pp.220-226
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    • 1997
  • An optical intensity-type pressure sensor has been fabricated by coupling multimode optical fiber with 100 nm-Au/30 nm-NiCr/150 nm-$Si_3N_4/300 nm-SiO_2/150 nm-Si_3N_4$ optical reflection layer supported by micromachined frame-shape silicon substrate, and its characteristics was investigated. For the application of $Si_3N_4/SiO_2/Si_3N_4$ diaphragm to the optical reflection layer of the sensor, NiCr and Au films were deposited on the backside of the diaphragm by thermal evaporation , respectively, and thus optical low caused by transmission in the reflection layer could be decreased to a few percents. Dielectric diaphragms with uniform thickness were able to be also reproduced because top- and bottom-$Si_3N_4$ layer of the diaphragm could automatically stop silicon anisotropic etching. The respective pressure ranges in which the sensor showed linear optical output power-pressure characteristics were 0~126.64 kPa, 0~79. 98 kPa, and 0~46.66 kPa, and the respective pressure sensitivities of the sensor were about 20.69 nW/kPa, 26.70 nW/kPa, and 39.33 nW/kPa, for the diaphragm sizes of 3$\times$3 $\textrm{mm}^2$, 4$\times$4 $\textrm{mm}^2$, and 5$\times$5 $\textrm{mm}^2$, indicating that the sensitivity increases as diaphragm size increases.

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SnO2 Semiconducting Nanowires Network and Its NO2 Gas Sensor Application (SnO2 반도체 나노선 네트웍 구조를 이용한 NO2 가스센서 소자 구현)

  • Kim, Jeong-Yeon;Kim, Byeong-Guk;Choi, Si-Hyuk;Park, Jae-Gwan;Park, Jae-Hwan
    • Korean Journal of Materials Research
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    • v.20 no.4
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    • pp.223-227
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    • 2010
  • Recently, one-dimensional semiconducting nanomaterials have attracted considerable interest for their potential as building blocks for fabricating various nanodevices. Among these semiconducting nanomaterials,, $SnO_2$ nanostructures including nanowires, nanorods, nanobelts, and nanotubes were successfully synthesized and their electrochemical properties were evaluated. Although $SnO_2$ nanowires and nanobelts exhibit fascinating gas sensing characteristics, there are still significant difficulties in using them for device applications. The crucial problem is the alignment of the nanowires. Each nanowire should be attached on each die using arduous e-beam or photolithography, which is quite an undesirable process in terms of mass production in the current semiconductor industry. In this study, a simple process for making sensitive $SnO_2$ nanowire-based gas sensors by using a standard semiconducting fabrication process was studied. The nanowires were aligned in-situ during nanowire synthesis by thermal CVD process and a nanowire network structure between the electrodes was obtained. The $SnO_2$ nanowire network was floated upon the Si substrate by separating an Au catalyst between the electrodes. As the electric current is transported along the networks of the nanowires, not along the surface layer on the substrate, the gas sensitivities could be maximized in this networked and floated structure. By varying the nanowire density and the distance between the electrodes, several types of nanowire network were fabricated. The $NO_2$ gas sensitivity was 30~200 when the $NO_2$ concentration was 5~20ppm. The response time was ca. 30~110 sec.