• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.305-310
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• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

• International Journal of Air-Conditioning and Refrigeration
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• v.15 no.3
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• pp.114-121
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• 2007

In this study, a modified reverse flow type, one of the triple effect absorption cycles, is studied for performance improvement. The cycle simulation is carried out by using EES(Engineering Equation Solver) program for the working fluid of $H_2O/LiBr$ solution. The split-ratios of solution flow rate, UA of each component, pumping mass flow rate of solution are considered as key parameters. The results show that the optimal SRH (split ratio of high side) and SRL (split ratio of low side) values are 0.596 and 0.521, respectively. Under these conditions, the COP is maximized to 2.1. The optimal pumping mass flow rate is selected as 3 kg/s and the corresponding UAEV A is 121 kW/K in the present system. The present simulation results are compared to the other literature results from Kaita's (2002) and Cho's (1998) triple effect absorption systems. The present system has a lower solution temperature and a higher COP than the Kaita's modified reverse flow, and it also gives a higher COP than the Cho's parallel flow by adjusting split ratios.

• Journal of Powder Materials
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• v.10 no.6
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• pp.448-455
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• 2003

$TiO_2$ nanopowder has been synthesized by means of the flame method using a precursor of titanium tetraisopropoxide (TTIP, Ti$(OC_3H_7)_4)$. In order to clarify the effect of cooling rate of hot flame on the formation of $TiO_2$ crystalline phases, the flame was controlled by varying the mixing ratio and the flow rate of gases. Anatase phase was predominantly synthesized under the condition having the steep cooling gradient in flame, while a slow cooling gradient enabled to form almost rutile $TiO_2$ nanopowder of above 95%.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.117-119
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• 2017

The multi-stage catalytic igniter for hybrid rocket auto ignition is described in this paper. After charging the catalyst and pre-heating the first stage, the $N_2O$ was supplied at the first stage with the low mass flow rate, and then the $N_2O$ with the high flow rate was supplied into the second stage. Even though the $N_2O$ flow rate was high, it was decomposed by supplying the high temperature gas which was evolved from the $N_2O$ decomposition in the first stage. This multi-stage ignitor resulted in the decrease of the ignition time in comparison with the previous ignitor, and confirmed the possibility of $N_2O$ decomposition with the high flow rate using the multi-stage catalytic-ignition system.

• Transactions of the Korean hydrogen and new energy society
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• v.14 no.1
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• pp.8-16
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• 2003

$TiO_2$ thin films were deposited by DC reactive magnetron sputtering with variations in sputtering parameter such as Ar and $O_2$ flow rate, DC power, substrate temperature and magnetic field. Deposition rate, crystal structure, chemical bond of $TiO_2$ films on the deposition conditions were investigated by Alpha-step, X-ray Diffractometer(XRD), X-ray Photoelectron Spectroscopy(XPS). When the DC power was applied at 500watt, deposition rate of $TiO_2$ film was about 480A/min. $TiO_2$ films coated under the deposition condition of 15sccm Ar and 7~10sccm $O_2$ flow rate was only observed anatase phase. With increasing substrate temperature from RT to $300^{\circ}C$, crystal orientation of $TiO_2$ films variously became.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.263-267
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• 1996

Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.1
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• pp.26-33
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• 2004

In general, an absorption chiller or heat pump is operated under the constant cooling water flow rate condition even though the system works with a partial load. The objective of this paper is to study the effect of the cooling water flow rates and the temperature of cooling water on the system performance to find the energy saving methode for the partial load operation of the double effect $H_2O$/LiBr absorption chiller. It is found that the performance of the system is sensitive to the temperature of cooling water than the cooling water flow rate, so the decrease of the performance due to reducing the cooling water flow rate can be overcome with the reduction of the cooling water temperature by 1$^{\circ}C$. The flow rate of the cooling water flow rate ranges from 50％ to 100％ of the flow rate at normal conditions with a partial load. It is also found that the operation cost of the cooling water pump and the cooling tower can be reduced by 23％.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.77-83
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• 2006

Anodic overpotential has been investigated with gas composition changes in a $100cm^2$ class molten carbonate fuel cell. The overpotential was measured with steady state polarization, reactant gas addition (RA), inert gas step addition (ISA), and electrochemical impedance spectroscopy (EIS) methods at different anodic inlet gas compositions, i.e., $H_2:CO_2:H_2O=0.69:0.17:0.14\;atm\;and\;H_2:CO_2:H_2O=0.33:0.33:0.33\;atm$, at a fixed $H_2$ flow rate. The results demonstrate that the anodic overpotential decreases with increasing $CO_2\;and\;H_2O$ flow rates, indicating the anode reaction is a gas-phase mass-transfer control process of the reactant species, $H_2,\;CO_2,\;and\;H_2O$. It was also found that the mass-transfer resistance due to the $H_2$ species slightly increases at higher $CO_2\;and\;H_2O$ flow rates. EIS showed reduction of the lower frequency semi-circle with increasing $H_2O\;and\;CO_2$ flow rate without affecting the high frequency semi-circle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.17-20
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.