• 제목/요약/키워드: $Ni_3$Al

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The Effects of Aging Heat Treatments on the Hardness and Electrocemical Corrosion for the Nimonic 80A Superalloy (Nimonic 80A 초내열합금의 경도와 전기화학적부식에 미치는 시효열처리의 효과)

  • 나은영
    • Journal of Advanced Marine Engineering and Technology
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    • v.22 no.5
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    • pp.660-669
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    • 1998
  • In this paper the Hardness and Electro-chemical corrosion of the Nimonic 80A superalloy were studied. It aging heat treatments was carried out at $650^{\circ}C$, $700^{\circ}C$, $750^{\circ}C$,$800^{\circ}C$ and $850^{\circ}C$ with different time of 20min , 30min 1hour, 2hours, 4hours, and 16hours additionally 64hours and 128hours at $650^{\circ}C$. The obtained results were as follows; 1. As aging temperature increased the time for the maximum hardness was reduced from 128hours at $650^{\circ}C$ to 30min at $850^{\circ}C$ whereas the highest hardness was reduced from Hv 381 at $650^{\circ}C$ to Hv 321 at $850^{\circ}C$. 2. In the Electro-chemical corrosion test as a function of aging heat treatment time and tem-perature the corrosion potential was reversely proportional to Hardness which indicated the effects of ${\gamma}/{\gamma}'$ coherency of base material and precipitate. 3. Initiation point of the pitting was observed at grain boundary twin boundary and near${\gamma}'$ pre-cipitates. The results of composition analysis by EDS at this point indicated that sulphur originat-ed from 1N $H_2SO_4$ solution was found in depletion at the grain boundaries and the pit which arouse in the near precipitates were lack of Al Ti and Ni which are the main element of ${\gamma}'$ The depletion of such element was cause breakdown of passive film.

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Microwave Annealing in Ag/HfO2/Pt Structured ReRAM Device

  • Kim, Jang-Han;Kim, Hong-Ki;Jang, Ki-Hyun;Bae, Tae-Eon;Cho, Won-Ju;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.373-373
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    • 2014
  • Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

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The Mineralogical and Geochemical Study on Korean Scheelites and its Application to the Ore Prospecting (한국산 灰重石鑛의 광물학적, 지화학적 연구 및 그의 探査에의 이용)

  • So, Chil-Sup;Park, Maeng-Eon
    • Economic and Environmental Geology
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    • v.12 no.2
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    • pp.79-93
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    • 1979
  • Twenty five samples of the scheelite-powellite series from twelve Korean tungsten deposits of various geologic settings were studied mineralogically and geochemically. Variations in the trace-element contents of the scheelite minerals are considered in relation to geologic settings and mineralogic properties. Scheelites from ore deposits developed in similar geologic settings and under similar physicochemical conditions are characterized by specific combinations of trace elements.

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Metal-induced Crystallization of Amorphous Semiconductor on Glass Synthesized by Combination of PIII&D and HiPIMS Process

  • Jeon, Jun-Hong;Choi, Jin-Young;Park, Won-Woong;Moon, Sun-Woo;Lim, Sang-Ho;Han, Seung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.286-286
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    • 2011
  • 최근 폴리머를 기판으로 하는 Flexible TFT (thin film transistor)나 3D-ULSI (three dimensional ultra large-scale integrated circuit)에서 높은 에너지 소비효율과, 빠른 반응 속도를 실현 시키기 위해 낮은 비저항(resistivity)을 가지며, 높은 홀 속도(carrier hall mobility)를 가지는 다결정 반도체 박막(poly-crystalline thin film)을 만들고자 하고 있다. 이를 실현 시키기 위해서는 높은 온도에서 장시간의 열처리가 필요하며, 이는 폴리머 기판의 문제점을 야기시킬 뿐 아니라 공정시간이 길다는 단점이 있었다. 이에 반도체 박막의 재결정화 온도를 낮춰주는 metal (Al, Ni, Co, Cu, Ag, Pd etc.,)을 이용하여 결정화 시키는 방법이 많이 연구 되어지고 있지만, 이 또한 재결정화가 이루어진 반도체 박막 안에 잔여 금속(residual metal)이 존재하게 되어 비저항을 높이고, 홀 속도를 감소시키는 단점이 있다. 이에 본 실험은 HiPIMS (High power impulse magnetron sputtering)와 PIII and D (plasma immersion ion implantation and deposition) 공정을 복합시킨 프로세스로 적은양의 금속이온주입을 통하여 재결정화 온도를 낮췄을 뿐 아니라, 잔여 하는 금속의 양도 매우 적은 다결정 반도체 박막을 만들 수 있었다. 분석 장비로는 박막의 결정화도를 측정하기 위해 GAXRD (glancing angle X-ray diffractometer)를 사용하였고, 잔여 하는 금속의 양과 화학적 결합 상태를 알아보기 위해 XPS를 통해 분석을 하였다. 마지막으로 홀 속도와 비저항을 측정하기 위해 Hall measurement와 Four-point prove를 사용하였다.

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Selective Metal Ion Sensing of Bipyridine-Bisterpyridine containing Fluorescent Dyes (다중 피리딘 구조를 가지는 형광염료의 금속 이온 반응성에 대한 연구)

  • Zo, Hye Jin;Kim, Arong;Jeong, Sooyeon;Park, Jong S.
    • Textile Coloration and Finishing
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    • v.25 no.4
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    • pp.254-261
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    • 2013
  • In this study, we synthesized a new fluorescent polypyridyl dye 2 containing a 2,2'-bipyridine in the center and two 2,2':6',2"-terpyridines at both ends. When exposed to various metal ions, the dye 2 showed selective fluorescence responses. In the presence of $Cu^{2+}$ and $Ni^{2+}$, it exhibited a highly effective fluorescence quenching, leading to large $K_{sv}$ values of up to $10^5$. In response to most other metal ions including $Al^{3+}$, in contrast, its fluorescence changes little, showing a small Ksv value at $10^2$. Meanwhile, the compound 2 revealed a differentiated fluorescence response to $Zn^{2+}$, which is evidenced by a large red shift of > 100 nm. Such a red shift from the ion binding is attributed to the planarization of the bipyridyl unit extending the effective conjugation length in conjunction. A polypyridyl compound will find important usefulness in chemosensor application due to its selective binding to metal ions. Subsequent research concerned with modified derivatives is currently going on, as a way to provide high solubility even after metal-complexing.

A Study in the High Temperature Wear and Thermal Shock Resistance of the Functional Gradient Thermal Barrier Coating by Air Plasma Spray with ZrO$_2$ (APS법에 의한 경사기능성 지르코니아 열장벽 피막의 열충격 및 고온내마모 특성에 관한 연구)

  • 한추철;박만호;송요승;변응선;노병호;이구현;권식철
    • Journal of the Korean institute of surface engineering
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    • v.30 no.4
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    • pp.272-280
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    • 1997
  • The Thermal Barrier Coation(TBC) to improve the that barrier and wear resistant propenrty in high temperature ofthe aircraftength between the accumlation of the aircraft engine and the automobile engine has usually the two layer structure. One is a creamic top layer for heat insulation and the other is a metal bond layer to facilitate the bond strength between the top ceramic layer and the substrate. But, the coated layers should be peeled off because of the accumulation of the thermal stress by the differance of the thermal expantion coefficient between metal and ceramics in a hrat cyclic environment. In this study, the intermediate layer by plasm spray process was introduced to reduce the thermal stress. The powders of plasm spray coating were the Yttria Stabilized Zirconia (YSZ), the Magnesia Stabillized Zirconia(MSZ) and NiCrAlY. the intermediate layer was sprayed with the powders of the bond cast for the purpose of test were executed. The high temperature wear resistance tends to decreasnceee wear and thermal shock test were exeucuted. The high temperature were resistance of the YSZ TBC is better that of the MSZ TBC. The wearrsistance tends to decrease accoring to incresing the temperature between $400^{\circ}C$to $600^{\circ}C$. The thermal shock life of the 3 layer TBC with YSZ top casting was the most outstanding thermal shock rsisstasnce. This means that the intermediate layer should play an importnat roll to alleviate the diffrerence of the thermal expansion coef frcients between metallic layer and cermics layer.

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Performance Evaluation of Selective Coatings for Solar Thermal Collectors (태양열 집열기에 사용될 선택흡수막의 성능 평가)

  • Lee, Kil-Dong
    • Journal of the Korean Solar Energy Society
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    • v.32 no.4
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    • pp.43-50
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    • 2012
  • Metal-metal oxide (M-M oxide) cermet solar selective coatings with a double cermet layer film structure were deposited on the Al-deposited glass substrate by using a directed current (DC) magnetron sputtering technology. M oxide (CrO and ZrO) was used as the ceramic component in the cermets, and Cr and Zr used as the metallic components. In addition, black Cr (Cr-$Cr_2O_3$ cermet) solar selective coatings were deposited on the Ni-plated Cu substrate by using a electroplating method for comparison. The thermal stability tests were carried out for performance evaluation of solar coatings. Reflectance measurements were used to evaluate both solar absorptance(${\alpha}$) and thermal emittance (${\epsilon}$) of the solar coatings before and after thermal testing by using a spectrometer. Optical properties of optimized cermet solar coatings were ${\alpha}{\simeq}0.94-0.96$ and ${\epsilon}{\simeq}0.1$ ($100^{\circ}C$). The results of thermal stability test of M-M oxide solar coatings showed that the Cr-CrO cermet solar selective coatings were more stable than the Zr-ZrO cermet selective coatings at temperature of both $400^{\circ}C$ in air and $450^{\circ}C$ in vacuum. The black Cr solar selective coatings were degraded in air at temperature of $400^{\circ}C$. The main optical degradation modes of these coatings were diffusion of metal atoms, and oxidation.

Antimutagenic effects of browning products reacted with polyphenol oxidase extracted from peach (복숭아 효소 갈변반응 생성물의 돌연변이원성 억제효과)

  • Ham, Seung-Shi;Choi, Kyeong-Kun
    • Applied Biological Chemistry
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    • v.35 no.2
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    • pp.82-86
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    • 1992
  • This research was carried out to investigate antimutagent effect of peach enzymatic browning reaction products(PEBRP) obtained by reacting each of polyphenol compounds with oxidase extracted from Korea-cultivated peach. In methods, rec-assay with B. subtilis strains $H17(rec^+)\;and\;M45(rec^-)$, and Ames test with S. typhimurium TA98 and TA100 were used. The spore rec-assay of PEBRP, pyrogallol, hydroxyhydroquinone, homocatechol and caffeic acid were not showed mutagenicity. In the effects of various metal ions$(Al^{3+},\;Cu^{2+},\;Fe^{2+},\;Mn^{2+},\;Ni^{2+},\;Pb^{2+},\;Zn^{2+})$ on the rec-assay, all PEBRP except caffeic acid was increased inhibition zone(5 mm) only with $Zn^{2+}$. In paticular, the Py-PEBRP was decreased the difference of inhibition zone of growth on MMC(mitomycin C). In results of Ames test, all PEBRP were not showed mutagenicity on S. typhimurium TA98 and TA100; however, Ca-PEBRP and Hca-PEBRP were suppressed mutagenic effects on Trp-P-1 and B(a)P in the presence of S-9Mix.

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A Study on the Reaction Optimization for the Utilization of CO2 and CH4 from Bio-gas (바이오가스에서 CO2/CH4 활용에 관한 반응최적화 연구)

  • KHO, DONGHYUN;CHO, WOOKSANG;BAEK, YOUNGSOON
    • Transactions of the Korean hydrogen and new energy society
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    • v.27 no.5
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    • pp.554-561
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    • 2016
  • Depending on the Bio-gas sources, main component gases of $CH_4$ and $CO_2$ are shown to be variously present in amounts. For the anaerobic digester, The concentration of $CH_4$ and $CO_2$ in the gases are 60~70 and 30~35 vol%. For the landfill gas, $CH_4$ and $CO_2$ are 40~60 and 40~60 vol%. For the food wastes, $CH_4$ and $CO_2$ are 60~80 and 20~40 vol%, respectively. In this study, maximum conversion rates of $CO_2$ were obtained from the variety of concentrations of $CH_4$ and $CO_2$ by the catalysts of reforming reactions. Moreover, in order to get maximum producing amount of synthetic gas, experimental studies were performed to optimize the reaction variables. On the basis of $CH_4$, 243 ml, R [$CH_4/(O2+CO_2)$] value were varied from 0.8 to 1.35, in the study of $CH_4$ and $CO_2$ reforming reactions. It was shown that the optimal results were obtained for 1.35 of R value. And also, at $850^{\circ}C$ and 1 atm, the production rate of synthetic gas was 90% and the conversion rates of $CH_4$ and $CO_2$ were higher than 99% and 90%, respectively.

증착방법을 달리한 $TiO_2$ 박막의 표면처리에 따른 저항변화 특성 연구

  • Seong, Yong-Heon;Kim, Sang-Yeon;Do, Gi-Hun;Seo, Dong-Chan;Jo, Man-Ho;Go, Dae-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.206-206
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    • 2010
  • 정보화 기술이 급속히 발전함에 따라서 보다 많은 양의 data를 전송, 처리, 저장 하게 되면서 이를 처리 할 수 있는 대용량, 고속, 비휘발성의 차세대 메모리의 개발이 요구 되고 있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Off state)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을 가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time이 $10^5$배 이상 빠르며, 2~5V 이하의 낮은 전압에서 동작이 가능하다. 또한 구조가 간단하여 공정상의 결함을 현저히 줄일 수 있다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 저항 변화의 특징을 잘 나타내는 물질에는 $TiO_2$, $Al_2O_3$, $NiO_2$, $HfO_2$, $ZrO_2$등의 많은 전이금속산화물들이 있다. 본 연구에서는 Reactive DC-magnetron Sputtering 방법과 DC-magnetron sputter를 이용하여 Ti를 증착한 후 Oxidation 방법으로 각각 증착한 $TiO_2$박막을 사용하여 저항변화특성을 관찰하였다. $TiO_2$상부에 Atomic Layer Deposition (ALD)를 이용하여 $HfO_2$ 박막을 증착하여 표면처리를 하고, 또한 $TiO_2$에 다른 전이 금속박막 층을 추가 증착하여 저항변화 특성에 접합한 조건을 찾는 연구를 진행하였다. 하부 전극과 상부 전극 물질로는 Si 100 wafer 위에 Pt 또는 TiN을 사용하였다. 저항변화 특성을 평가하기 위해 Agilent E5270B를 이용하여 current-voltage (I-V)를 측정하였다. X-ray Diffraction (XRD)를 이용하여 증착 된 전기금속 박막 물질의 결정성을 관찰했으며, Atomic Force Microscopy (AFM)을 이용하여 증착 된 샘플의 표면을 관찰했다. SEM과 TEM을 통해서는 sample의 미세구조를 확인 하였다.

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