• Title/Summary/Keyword: $Ni_2O_3$

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Effect of Promoter with Ru and Pd on Hydrogen Production over Ni/CeO2-ZrO2 Catalyst in Steam Reforming of Methane (메탄의 수증기 개질 반응에서 Ni/CeO2-ZrO2 촉매의 수소 생산에 대한 Ru 및 Pd의 조촉매 효과)

  • In Ho Seong;Kyung Tae Cho;Jong Dae Lee
    • Applied Chemistry for Engineering
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    • v.35 no.2
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    • pp.134-139
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    • 2024
  • In the steam reforming of methane reactions, the effect of adding noble metals Ru and Pd to a Ni-based catalyst as promoters was analyzed in terms of catalytic activity and hydrogen production. The synthesized catalysts were coated on the surface of a honeycomb-structured metal monolith to perform steam methane reforming reactions. The catalysts were characterized by XRD, TPR, and SEM, and after the reforming reaction, the gas composition was analyzed by GC to measure methane conversion, hydrogen yield, and CO selectivity. The addition of 0.5 wt% Ru improved the reduction properties of the Ni catalyst and exhibited enhanced catalytic activity with a methane conversion of 99.91%. In addition, reaction characteristics were analyzed according to various process conditions. Methane conversion of over 90% and hydrogen yield of more than 3.3 were achieved at a reaction temperature of 800 ℃, a gas hourly space velocity (GHSV) of less than 10000 h-1, and a ratio of H2O to CH4 (S/C) higher than 3.

Micro Structure and Surface Characteristics of NiCr Thin films Prepared by DC Magnetron Sputter according to Annealing Conditions (DC 마그네트론 스퍼터링 NiCr 박막의 열처리 조건에 따른 미세구조 및 표면특성)

  • Kwon, Yong;Kim, Nam-Hoon;Choi, Dong-You;Lee, Woo-Sun;Seo, Yong-Jin;Park, Jin-Seong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.6
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    • pp.554-559
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    • 2005
  • Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.

Improved Physical Properties of Ni-doped $BiFeO_3$ Ceramic

  • Yoo, Y.J.;Park, J.S.;Kang, J.H.;Kim, J.;Lee, B.W.;Kim, K.W.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.250-250
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    • 2012
  • Recently, multiferroic materials have attracted much attention due to their fascinating fundamental physical properties and potential technological applications in magnetic/ferroelectric data storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3$, in particular, has received considerable attention because of its very interesting magnetoelectric properties for application to spintronics. Enhanced ferromagnetism was found by Fe-site ion substitution with magnetic ions. In this study, $BiFe_{1-x}Ni_xO_3$ (x=0 and 0.05) bulk ceramic compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Fe_3O_4$ and NiO powders were mixed with the stoichiometric proportions, and calcined at $450^{\circ}C$ for 24 h to produce $BiFe_{1-x}Ni_xO_3$. Then, the samples were directly put into the oven, which was heated up to $800^{\circ}C$ and sintered in air for 20 min. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The Raman measurements were carried out with a Raman spectrometer with 514.5-nm-excitation Ar+-laser source under air ambient condition on a focused area of $1-{\mu}m$ diameter. The field-dependent magnetization and the temperature-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The x-ray diffraction study demonstrates the compressive stress due to Ni substitution at the Fe site. $BiFe_{0.95}Ni_{0.05}O_3$ exhibits the rhombohedral perovskite structure R3c, similar to $BiFeO_3$. The lattice constant of $BiFe_{0.95}Ni_{0.05}O_3$ is smaller than of $BiFeO_3$ because of the smaller ionic radius of Ni3+ than that of Fe3+. The field-dependent magnetization of $BiFe_{0.95}Ni_{0.05}O_3$ exhibits a clear hysteresis loop at 300 K. The magnetic properties of $BiFe_{0.95}Ni_{0.05}O_3$ were improved at room temperature because of the existence of structurally compressive stress.

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Reactive Ion Etching of NiFe Film with Organic Resist Mask and Metal Mask by Inductively Coupled Plasma

  • Kanazawa, Tomomi;Motoyama, Shin-Ichi;Wakayama, Takayuki;Akinaga, Hiroyuki
    • Journal of Magnetics
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    • v.12 no.2
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    • pp.81-83
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    • 2007
  • Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

Effects of Surface Microstructure on Microwave Dielectric Properties of ZrO2-NiO added Ba(Zn1/3Ta2/3)O3 Ceramics (ZrO2와 NiO가 첨가된 Ba(Zn1/3Ta2/3)O3에서 표면 미세조직이 고주파 유전특성에 미치는 영향)

  • Kang, Sung-Woo;Kim, Tae-Heui;Moon, Joo-Ho;Kim, Sung-Youl;Park, Jun-Young;Choi, Sun-Hee;Kim, Joo-Sun
    • Journal of the Korean Ceramic Society
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    • v.45 no.11
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    • pp.701-706
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    • 2008
  • High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

Tunneling Magnetoresistance of a Ramp-edge Type Junction With Si3N4 Barrier (Si3N4장벽층을 이용한 경사형 모서리 접합의 터널링 자기저항 특성)

  • Kim, Young-Ii;Hwang, Do-Guwn;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.12 no.6
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    • pp.201-205
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    • 2002
  • The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and +90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.

Ni-Cu alloy electroplating to improve Electromagnetic Shielding effect (전자파 차폐능 향상을 위한 Ni-Cu합금 도금)

  • Im, Seong-Bong;Lee, Ju-Yeol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2011.05a
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    • pp.137-138
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    • 2011
  • 구리 이온은 -0.40V (vs. SCE)에서 전기화학적 환원이 일어나는 반면, 니켈 이온은 -1.19V (vs. SCE)에서 전착이 발생한다. 따라서, 단일 도금욕조 내에서 Ni-Cu 합금도금층을 제조하기 위해서는 두 금속 이온종 간의 전위차를 줄여주어야 하는데, 이를 위해 본 연구에서는 $Na_3C_6H_5O_7{\cdot}2H_2O$를 착화제로 사용하였다. 다양한 Ni-Cu 합금 도금층의 조성을 얻기 위하여 기본 도금욕 내 황산니켈과 황산구리의 비율을 10:1로 설정하였다. 도금 공정 조건에 따른 합금 도금층 조성 변화를 관찰하기 위하여 도금액 pH와 교반 속도에 따른 도금층 조성 변화를 분석하였으며, 도금액의 UV-VIS과 도금층의 XRD 와 SEM 측정을 통하여 도금욕과 도금층 간의 상관 관계를 유추하였다. 본 도금액에 사용된 $Na_3C_6H_5O_7{\cdot}2H_2O$ 착화제의 효과는 pH3에서 가장 현저하였으며, pH 변화 및 교반 속도 변화를 이용하여 다양한 합금 조성을 얻을 수 있었다.

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Effect of YSZ Particle Size and Sintering Temperature on the Microstructure and Impedance Property of Ni-YSZ Anode for Solid Oxide Fuel Cell (고체산화물 연료전지용 Ni-YSZ 음극의 미세구조와 임피던스특성에 미치는 YSZ 입자크기 및 소결온도의 영향)

  • 김구대;문지웅;이기태;이홍림
    • Journal of the Korean Ceramic Society
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    • v.38 no.5
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    • pp.466-473
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    • 2001
  • Ni-YSZ 음극의 미세구조와 임피던스특성에 미치는 YSZ 입자크기 및 소결온도의 영향을 고찰하였다. 0.3~0.6$\mu\textrm{m}$의 미세한 NiO 분말을 사용할 경우에는 NiO 분말과 크기가 비슷한 미세한 YSZ 분말(TZ8Y, 0.3$\mu\textrm{m}$)을 첨가했을 때 NiO의 입성장을 억제하는 효과가 가장 크고 환원후 Ni의 입자크기를 미세하게 유지할 수 있는 미세구조를 형성하였다. 또한 미세한 YSZ 분말 (TZ8Y, 0.3$\mu\textrm{m}$)과 조대한 YSZ 분말(FYT13.0, 2$\mu\textrm{m}$)의 혼합비를 달리하여 후막을 제조하였을 때에 TZ8Y 분말만 첨가한 조성이 가장 낮은 분극 저항을 나타내었다. 한편 소결온도는 삼상계면의 양과 분극저항에 영향을 주었으며, 140$0^{\circ}C$에서 소결한 시편의 분극저항이 가장 낮은 값을 나타내었다.

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Variation of Tensile Strength by Addition of Y2O3 and Effect of Aging Treatment in Ni Base Alloy Fabricated by MA Method (MA법으로 제조된 Ni기 합금에서 Y2O3 첨가에 따른 인장강도변화와 시효처리 효과)

  • Kim, Il-Ho;Lee, Won-Sik;Ko, Se-Hyun;Jang, Jin-Man;Kwun, Sook-In
    • Journal of Powder Materials
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    • v.15 no.1
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    • pp.23-30
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    • 2008
  • Ni-20Cr-20Fe-5Nb alloy with or without $Y_2O_3$ was manufactured by mechanical alloying process and consolidated by spark plasma sintering (SPS). The grain size of the alloy with $Y_2O_3$ was smaller than that of alloy without $Y_2O_3$ which results from the effect of $Y_2O_3$ suppressing grain growth. The tensile strength at room temperature was increased by the addition of $Y_2O_3$ but decreased abruptly at temperature above $600^{\circ}C$. It seems to result from the change of deformation mechanism due to fine grain size, that is, grain boundary sliding is predominant at above $600^{\circ}C$ while internal dislocation movement is predominant at below $600^{\circ}C$. After conventional heat treatment process of solution treatment and aging, a small amount of ${\delta}(Ni_3Nb)$ phase was formed in Ni-20Cr-20Fe-5Nb alloy while a large amount of ${\gamma}"(Ni_3Nb)$ was formed in Inconel 718 in the previous report. This is due to exhaustion of Nb content by the formation of NbC during consolidation.

The Effect of NiO Addition to the PNN-PZT Piezoelectric Ceramics on Piezoelectric Properties (Pb(Ni1/3Nb2/3)O3-PZT 세라믹스 고용체에서 과잉 NiO첨가에 따른 압전특성 변화)

  • Choi Y. G.;Son Y. J.;Kweon J. C.;Cho K. W.;Yoon M. S.;Kim I. H.;Kim Y. M.;Ur S. C.
    • Korean Journal of Materials Research
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    • v.15 no.6
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    • pp.413-418
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    • 2005
  • Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.