• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.5-8
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• 2007

All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.

• Journal of the Korean Chemical Society
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• v.37 no.11
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• pp.923-928
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• 1993

The series of solid solutions in the $Sr_{1+x}Ho_{1-x}FeO_{4-y}$ (x = 0.00, 0.25, 0.50, 0.75 and 1.00) systems with $K_2NiF_4$ type structure have been prepared at 1550$^{\circ}$C under an atmospheric air pressure. The X-ray powder diffraction spectra of these samples assign that the crystallographic phases are tetragonal system over the whole x range. The lattice volume was increased with increasing the substitution amount of the $Sr^{2+}$ ion. The mole ratio of the $Fe^{4+}$ ion to total iron ions or ${\tau}$ value has been determined by Mohr salt titration of the sample and then the y value was calculated from x and ${\tau}$ values. The ${\tau}$ and y values have been increased with x values. The nonstoichiometric chemical formula are formulated from the general formula of $Sr_{1+x}Ho_{1-x}Fe^3_{1-}\;^+_{\tau}Fe_{\tau}^{4+}O_{4-y}$ replaced by x,${\tau}$ and y values. Mossbauer spectra show the mixed valence state and coordination state of $Fe^{3+}\;and\;Fe^{4+}$ ions. It is found out that the magnetic property of the samples is paramagnetic at room temperature. Electrical conductivity varied within the semiconductivity range of 1.0 to 1 ${\times}\;10^{-9}{\Omega}^{-1}cm^{-1}$. Activation energy of the electrical conductivity was decreased with the $\tau$ value. The conduction mechanism should be explained by the hopping model of the conduction electrons between the valence states of $Fe^{3+}\;and\;Fe^{4+}$ ions.

• Journal of Environmental Science International
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• v.21 no.4
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• pp.421-435
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• 2012

Novel $N_2O_2$ tetradentate ligands, H-3BPD and H-2BPD were synthesized. Hydrochloric acid salts of Br-3BPD, Cl-3BPD, Br-2BPD and Cl-2BPD having Br and Cl substituents at the $para$ position of the phenol hydroxyl group, were synthesized. The ligands were characterized by C. H. N atomic analysis, $^1H$ NMR, $^{13}C$ NMR, UV-visible, and mass spectra. The proton dissociation constants ($logK_n{^H}$) of the phenol hydroxyl group and secondary amine of the synthesized $N_2O_2$ ligands were shown by four step wise values. The orders of the calculated overall proton dissociation constants ($log{\beta}_p$) were Br-3BPD < Cl-3BPD < H-3BPD in case of 3BPD and Br-2BPD < Cl-2BPD < H-2BPD in case of 2BPD respectively. The order agreed well with that of $para$ Hammett substituent constants(${\delta}_p$). The stability constants($logK_{ML}$) of the complexes between the synthesized ligands and transition metal(II) ions agreed with the order of $log{\beta}_p$ of the ligands. The order of the $logK_{ML}$ value of the each transition metal (II) ion was Co(II) < Ni(II) < Cu(II) > Zn(II) > Cd(II) > Pb(II), which agreed well with that of Iriving-Williams series.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.98-103
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• 2013

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.27-28
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• 2014

투명전극이란 전기 전도도를 갖는 동시에 가시광선 영역에서 빛을 투과하는 성질을 가지는 소재이다. 일반적으로 가시광선 영역(380nm~780nm)에서 80%이상의 광 투과도를 가지며, 비저항이 $10^{-3}{\Omega}{\cdot}cm$ 이하, optical band gap 이 3.3 eV 이상인 물질을 TCO(Transparent Conducting oxide)라고 한다. 현재까지 국내의 TCO 관련 연구는 터치패널, 디스플레이, 태양전지 등 광전자분야에서 가장 널리 사용되고 있는 ITO(Sn:In2O3)에 치중되어 있으며, 관련 연구도 거의 디스플레이 맞춤형 연구개발이 주류를 이루어왔다. ITO가 전기전도성이 우수하고 동시에 가시광선 영역에서의 투과율도 80%이상으로 전기적, 광학적 특성이 우수하다는 장점을 가지고 있으나, In의 희소성으로 인한 고가격, 유독성, 접착력 문제 때문에 이를 대체하기 위해 제조원가가 ITO에 비하여 월등히 저렴하고 내화학성과 내마모성이 우수하면서도, 가시광선 영역에서의 광투과율이 80%이상으로 좋다는 $SnO_2$에 관한 연구가 활발히 진행되어 왔다. 적절한 dopant를 첨가하여 $SnO_2$자체의 높은 광학적 투과도를 유지하면서 전기전도성을 더 높일수 있고, 투명전극이 가져야 할 고온 안정성을 가지고 있으며 비독성이고 수소 플라즈마에 대한 내성이 더 클 뿐만 아니라 저온에서 성장이 가능하다. $SnO_2$의 전기 전도도를 높이기 위한 Al, In, Ga, B와 같은 3족 원소가 $SnO_2$의 n형 dopant로 널리 사용되고 있다. 그 중 Al은 반응성이 커서 박막 증착 중에 산화되기 쉬운 반면, 전기적 특성 및 광학적 특성의 향상을 이룰 수 있다. 본 연구에서는 Rf Sputtering법을 사용하여 quartz기판 위에 다층박막 형태의 투명전도막을 제작한 후, 열처리를 수행, 이에 의한 다층박막 내 계면간 상호확산 현상을 이용하여 투명 전도막의 특성변화를 관찰하였다. 박막의 구조적 특성은 XRD장비를 사용하여 분석하였으며, 전기적, 광학적 특성은 각각 표면저항기, 홀 측정 장비, 그리고 UV-VIS-NI를 사용하여 확인하였다.

• Journal of the Korean Chemical Society
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• v.29 no.4
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• pp.397-405
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• 1985

The adsorption behaviors of some oxime compounds well known as metal chelating agents on the Amberlite XAD resins were compared by measuring their distribution coefficients (log Kd) in various media, respectively. Among the oxime compounds, salicylaldoxime (SAO) and $\alpha-benzoinoxime(${\alpha}$-BzO)$ which showed large log Kd values were chosen. The characteristics of XAD-4 resins impregnated with SAO and ${\alpha}$-BzO have been studied to apply them for the adsorption and recovery of minute quantities of metal ions in aqueous solution. The optimum conditions for adsorption of SAO and ${\alpha}$-BzO on the resin were 30% methanol media having pH range of 1~8(for SAO) and 1~9 (for ${\alpha}$-BzO), respectively. The distribution coefficients of two oxime compounds were decreased as temperature increased. From the adsorption enthalpy data of SAO and ${\alpha}$-BzO, ranging from 4.96 to 6.66 Kcal/mol, it is suggested that their adsorption mechanism on XAD-4 resin is likely due to molecular adsorption equivalent to dipole-dipole interaction. The impregnated resins were considerably stable in the aqueous solutions of pH 5.0~10.0 and in 0.1~5M hydrochloric acid solutions. The former is the medium for adsorption of metal ions, while the latter is for recovery of the adsorbed metal ions. The adsorption mole ratio of Mn(II), Co(II), Ni(II), Zn(II) ions on SAO-XAD-4 and ${\alpha}$-BzO-XAD-4 resins were about 1 : 2 at the optimum conditions, respectively. The adsorbed metal ions were recovered completely by eluting with 3M HCl-50% methanol solution

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.255-258
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• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.128-131
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• 1997

기본 조성식 M $n_{1-x}$/F $e_{2+x}$/ $O_4$(이하 Mg계), M $n_{1-x}$/F $e_{2+x}$/ $O_4$(이하 Mg계)의 식에서 x를 0.0,0.025,0.1,0.2로 변화시키고, 하소온도 80$0^{\circ}C$, 소결은도를 l10$0^{\circ}C$~12$50^{\circ}C$로 $50^{\circ}C$간격으로 변화 시켰을 때와 Mn계와 Mg계를 1:1로 흔합하였을 때, F $e_2$ $O_3$의 과잉 양이 증가할수록 비저항은 감소하였고, 저항온도계수 $\alpha$는 밀도와 비례하는 관계를 나타내었으며, B정수는 4600(K)에서 10500(K)의 범위를 나타내었다. 본 조성의 실험으로써 Mn-Ni-Co계 서미스터의 대체가 가능함을 확인할 수 있었다.있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.645-651
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• 2008

To reduce noise in high frequency and distortion of signal, the composition of $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$ and $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ was developed. The composition was not solid solution, but mixtures of various phases composed of Ca, Sr, Zr, Ti and Ba oxides. The dielectric constant increased, the quality factor and the insulation resistance decreased with $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ content. The composition of $0.4(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ satisfied the electric characteristics and the temperature coefficient of dielectric constant (TCC). In addition, the glass frit and $MnO_2$ also affected the electric characteristics. From the result of the best fit simulation, $MnO_2$ 0.3 mol%, the glass frit 0.6 wt% showed the insulation resistance $906{\Omega}{\cdot}F$, the quality factor 821, and the dielectric constant 92. With the selected composition, MLCC capacitors sized $4.5{\times}3.2{\times}2.5mm$ were manufactured with 105 layered of the dielectric thickness $16{\mu}m$ using Ni inner electrode, They represented the capacitance $98{\sim}102$ nF, the quality factor 1,200 and the insulation resistance $1,500{\Omega}{\cdot}F$. Also, they had high break-down voltage with $107{\sim}115V/{\mu}m$, and satisfied the SL TCC characteristics.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.571-576
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• 1998

This study was carried out for investigating the corrosion behaviors, corrosion mechanisms, and behaviors of elements on a separator for a molten carbonate fuel cell under both the electrolyte and anode side environment. A 310S austenitic stainless steel was used as the separator material. Corrosion proceeded via three steps; the formation step of corrosion product in which rapid corrosion takes place until stable corrosion product is formed after the beginning of corrosion, the protection step against corrosion until breakaway occurs after the formation step of stable corrosion product and the advancing step of corrosion after the breakaway. From the standpoint of the behavior of the elements in the specimen, Fe and Cr, Ni were enriched in the region of corrosion product, in the region of corrosion protection, and at the Cr-deplete zone, respectively. With respect to corrosion mechanism, ionization of electrolyte at the anode side was the main corrosion mechanism, and the final corrosion products were $LiFeO_2$ and $LiCrO_2$ at the anode side.