• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.29-32
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• 2000

Meta1-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/LiNbO$_{3}$/AIN/Si structure were successfully fabricated. AIN thin films were made into metal-insulator-semiconductor(MIS) devices by evaporating aluminum in a dot array on the film surface. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V ) characteristic is 8. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$10$^{-8A}$ $\textrm{cm}^2$ order at the electric field of 500㎸/cm. A typica] value of the dielectric constant of MFIS device was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500㎸/cm was about 5.6$\times$ 10$^{13}$ $\Omega$.cmcm

• 한국전기전자재료학회논문지
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• 제25권8호
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• pp.646-650
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• 2012

Multifunctional structures with two kinds of materials have been intensively investigated in order to improve their electrical characteristic with two functions simultaneously. However, the research regarding of multifunctional ceramic sensor is still in a preliminary stage and how to integrate them with low-cost and high-yield mass production process remains a challenge issue. In this study, we fabricated the multifunctional ceramic sensor composed of temperature and gas sensors. Moreover, we investigated the CO sensing properties of three dimensional nanostuctured $Nb_2O_5$ thin film gas sensors fabricated with silica ($SiO_2$ nanosphere (${\O}$= 750 nm). Compared to plain films, the nanostructured films show enhanced gas sensing of greater sensitivity and a faster response. This result reveals that significantly increased sensitivity is an increase in the effective surface area for the adsorption of gas molecules.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

• 전기학회논문지
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• 제60권6호
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• pp.1175-1177
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• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• 한국재료학회지
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• 제14권9호
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• pp.607-613
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• 2004

This study was to investigate the surface properties of electrochemically oxidized Ti-6Al-7Nb alloy by anodic spark discharge technique. Anodizing was performed at current density 30 $mA/cm^2$ up to 300 V in electrolyte solutions containing $DL-{\alpha}$-glycerophosphate disodium salt hydrate($DL-{\alpha}$-GP) and calcium acetate (CA). Hydrothermal treatment was done at $300^{\circ}C$ for 2 hrs to produce a thin outermost layer of hydroxyapatite (HA). The bioactivity was evaluated from HA formation on the surfaces in a Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 30 days. The size of micropores and the thickness of oxide film increased and complicated multilayer by increasing the spark forming voltage. Needle-like HA crystals were observed on anodic oxide film after the hydrothermal treatment at $300^{\circ}C$ for 2 hrs. When increasing $DL-{\alpha}$-GP in electrolyte composition, the precipitated HA crystals showed the shape of thick and shorter rod. However, when increasing CA, the more fine needle shape HA crystals were appeared. The bioactivity in Hanks' solution was accelerated when the oxide films composed with strong anatase peak with presence of rutile peak. The increase of amount of Ca and P was observed in groups having bioactivity in Hanks' solution. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal and it was closer to 1.67 as increasing the immersion time in Hanks' solution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.343-343
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• 2008

• 한국재료학회지
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• 제14권12호
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• pp.876-884
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• 2004

This study was to investigate whether the bioactivity of the anodized and hydrothermally treated Ti-6Al-7Nb alloy were affected by the time of hydrothermal treatment. Anodizing was performed at current density 30 $mA/cm^2$ up to 300 V in electrolyte solutions containing $DL-{\alpha}-glycerophosphate$ disodium salt hydrate $(DL-{\alpha}-GP)$ and calcium acetate (CA). Hydrothermal treatment was done at $300^{\circ}C$ for 30 min, 1 hr, 2 hrs, and 4 hrs to produce a thin film layer of hydroxyapatite (HA). The bioactivity was evaluated from HA formation on the surfaces in a Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 10, 20, and 30 days. Anodic oxide films were porous with pore size of $1\sim4{\mu}m\;and\;3\sim4{\mu}m$ thickness. The anodic oxide films composed with strong anatase peak with presence of rutile peak, and showed the increase in intensity of anatase peak after hydrothermal treatment. It was shown that the intensity of anatase peak increased with increasing the time of hydrothermal treatment but was no difference in rutile peak. The corrosion voltage was the highest in the group of hydrothermal treatment for 2 hrs (Ecorr: -338.6 mV). The bioactivity in Hank's solution was accelerated with increasing the time of hydrothermal treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.116-116
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• 2007

21 세기에 접어들면서 인터넷을 통한 정보 통신의 발달과 개인 휴대용 이동 통신기기의 활발한 보급에 따라 휴대형 전자기기들의 소형화와 고성능화로 나아가고 있다. 이러한 전자기기에 사용될 IC의 내장 메모리 또한 집적화 및 고속화, 저 전력화가 이루어져야 한다. 이러한 전자기기들에 필수적인 압전 세라믹스 부품 중 압전 부저 및 기타 음향 부품등을 각종 전자기기와 무선 전화기에 채택함으로써 압전 부품에 대한 수요와 생산이 계속 증가할 것으로 전망된다. 이처럼 압전 세라믹스를 이용한 그 응용 범위는 대단히 방대하며, 현재 모든 압전 부품들은 PZT 계열 재료로 만들어지고 있고, 차후 모두 비납계열 재료로 대체될 것이 확실시된다. Pb의 환경오염은 이미 오래전부터 큰 문제점으로 인식되고 있었으며 그 일례로 미국의 캘리포니아 주에서는 1986년부터 약 800종의 유해물질, 그 중에서도 Pb 사용을 300ppm 이하로 규제하는 Proposition 65를 제정하여 실행하고 있다. 그리고 2003년 2월에 EU (European Union) 에서 발표한 전자산업에 관한 규제 사항중 하나인 위험물질 사용에 관한 지칭 (Restriction of Hazardous Substance, RoHS) 에 의하면, 2006 년 7월부터 전기 전자 제품에 있어서 위험 물질인 Pb을 포함한 중금속 물질(카드늄, 수은, 6가 크롬, 브롬계 난연재)의 사용을 금지한다고 발표하였다. 비록 전자세라믹 부품에 함유된 Pb는 예외 사항으로 두었지만 대체 가능한 물질이 개발되면 전자세라믹 부품에서도 Pb의 사용을 금지한다고 규정하였다. 더욱이 일본은 2005 년부터 Pb 사용을 금지시켰다. 이와 같이 Pb가 환경에 미치는 영향 때문에 비납계 강유전 물질 및 압전 세라믹스 재료에 대한 연구가 전 세계적으로 활발히 진행되고 있다. 본 연구에서는 비납계 강유전체의 patterning을 위해서, NKN 박막을 고밀도 플라즈마원인 ICP를 이용하여 식각 mechanism을 연구하고, 식각변수에 따른 식각 공정을 최적화에 대하여 연구하였다. 가스 혼합비에 따라 식각 할때 700 W의 RF 전력과 - 150 V의 직류 바이어스 전압을 인가하였고, 공정 압력은 2 Pa, 기판 온도는 $23^{\circ}C$로 고정하였다. 식각 속도는 Tencor사의 Alpha-step 500을 이용하여 측정되었으며 식각 시 NKN 박막 표면과 라디칼과의 화학적인 반응을 분석하고 식각 메커니즘을 규명하기 위하여 XPS(x-ray photoelectron spectroscopy)를 사용하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.86-89
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• 2000

The detection technique both the polarization and the mobile charge density at the same time in ferroelectric films on Si using TVS method have been proposed. This method yields a polarizable and an ionic displacement current peaks whose areas are proportional to the total polarization reversal charge and the total moble ionic space charge, respectively. The calculated polarization and the mobile charge density were 0.42 [$\mu$C/$\textrm{cm}^2$] and 5.5$\times$10$^{11}$ (ions/$\textrm{cm}^2$) in the SBT film of MFIS structure measured at 25$0^{\circ}C$, and 1.4 [$\mu$C/$\textrm{cm}^2$] in the LiNbO$_3$ film of MFS structure measured at 30$0^{\circ}C$, respectively.

• 한국재료학회지
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• 제14권9호
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• pp.634-641
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• 2004

The photocatalytic performance of $TiO_2$ thin films coated on porous alumina balls using various aqueous $TiOCl_2$ solutions as starting precursors, to which 1.0 $mol\%$ transition metal ($Ni^{2+},\;Cr^{3+},\;Fe^{3+},\;Nb^{3+},\;and\;V^{5+}$) chlorides had been already added, has been investigated, together with characterizations for $TiO_2$ sols synthesized simultaneously in the same autoclave through hydrothermal method. The synthesized $TiO_2$ sols were all formed with an anatase phase, and their particle size was between several nm and 30 nm showing ${\zeta}-potential$ of $-25{\sim}-35$ mV, being maintained stable for over 6 months. However, the $TiO_2$ sol added with Cr had a much lower value of -potential and larger particle sizes. The coated $TiO_2$ thin films had almost the same shape and size as those of the sol. The pure $TiO_2$ sol showed the highest optical absorption in the ultraviolet light region, and other $TiO_2$ sols containing $Cr^{3+},\;Fe^{3+}\;and\;Ni^{2+}$ showed higher optical absorption than pure sol in the visible light region. According to the experiments for removal of a gas-phase benzene, the pure $TiO_2$ film showed the highest photo dissociation rate in the ultraviolet light region, but in artificial sunlight the photo dissociation rate of $TiO_2$ coated films containing $Cr^{3+},\;Fe^{3+}\;and\;Ni^{2+}$ was measured higher together with the increase of optical absorption by doping.