• The Journal of the Korea Contents Association
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• v.21 no.7
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• pp.340-350
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• 2021

This study was conducted by utilizing the Q research method, which is one of the qualitative analysis methods that can approach the in-depth and essential meaning of consumers' restaurant O2O service operation behavior. The purpose of this study is to classify the behavior of restaurant O2O services by type, to find out the characteristics of variables, and to suggest future improvement directions. An exploratory study was conducted using the Q-methodology to analyze the subjective perception of the restaurant O2O service behavior. To this end, positive and negative statement cards were prepared, P samples were selected, and Q-sort, which was subjected to classification, was analyzed using the PC QUANL program and Q factor analysis. As a result of the analysis, it was classified into three single types. Type 1 【(N= 7: Restaurant O2O Service Convenience Syndrome Type】, Type 2 【(N= 7): Restaurant O2O Service Benefit Pursuit Type】, Type 3 【(N= 6): Restaurant O2O Service Convenience Type】 The name of the factor was set as [Type], and it was found that each type has different characteristics. Through this analysis, the marketing strategy according to each factor detected is presented, and the point of supplementing the restaurant's O2O service and the direction of future operation. services in future studies.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Journal of Microbiology and Biotechnology
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• v.23 no.1
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• pp.99-105
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• 2013

In this study, nitrous oxide ($N_2O$) emission was compared between the operations of two different sequencing batch reactors, conventional sequencing batch reactor (CNVSBR) and simultaneous nitrification and denitrification sequencing batch reactor (SND-SBR), using synthetic wastewater. The CNV-SBR consisted of anoxic (denitrification) and aerobic phases, whereas the SND-SBR consisted of a microaerobic (low dissolved oxygen concentration) phase, which was achieved by intermittent aeration for simultaneous nitrification and denitrification. The CNV-SBR emitted 3.9 mg of $N_2O$-N in the denitrification phase and 1.6 mg of $N_2O$-N in the nitrification phase, resulting in a total emission of 5.5mg from 432mg of $NH_4^+$-N input. In contrast, the SND-SBR emitted 26.2mg of $N_2O$-N under the microaerobic condition, which was about 5 times higher than the emission obtained with the CNV-SBR at the same $NH_4^+$-N input. From the $N_2O$ yield based on $NH_4^+$-N input, the microaerobic condition produced the highest yield (6.1%), followed by the anoxic (0.9%) and aerobic (0.4%) conditions. It is thought that an appropriate dissolved oxygen level is critical for reducing $N_2O$ emission during nitrification and denitrification at wastewater treatment plants.

• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.466-472
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• 2012

Visible-light-responding photocatalysts, $N-TiO_2$, were prepared by nitrogen doping onto $TiO_2$. The crystalline structure and morphology, doping state of the prepared photocatalysts were characterized by XRD, FE-SEM, and XPS. The activity of the prepared photocatalysts was examined by the decomposition of methyleneblue. The prepared catalysts were anatase type and the crystallinity was increased with pH. The particle sizes of the prepared catalysts were 5.42, 5.99, 7.58 nm at pH 2.2, 4.7, 9.0, respectively. The particle sizes of the prepared catalysts were slightly increased with pH. The activity of the photocatalysts was directly proportional to the crystallinity of the catalysts. $N-TiO_2$ prepared by nitrogen doping onto $TiO_2$ showed activity under visible light. The doped nitrogen was located not in the lattice but on the surface.

• YAKHAK HOEJI
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• v.38 no.4
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• pp.455-461
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• 1994

Each nitrogen and oxygen site isotope enriched the cyclophosphamide metabolite phosphoramide mustard was synthesized. Reaction of N,N-bis(2-chloroethyl)phosphoramidic dichloride$[Cl_2P(O)N(CH_2CH_2Cl)_2]$ with benzyl alcohol and ammonia gave N,N-bis(2-chloroethyl)phosphorodiamidic acid phenylmethyl ester $[BzO(H_2N)P(O)N(CH_2CH_2Cl)_2]$. Catalytic hydrogenation of this benzyl ester followed by the addition of cyclohexylamine provided PM. Incorporation of $^{15}NH_3$ into this general scheme gave PM with a $^{15}NH_2$ moiety. Glycine-$^{15}N$ was converted to bis(2-chloroethyl)amine-$^{15}N$ hydrochloride which, in turn, provided for N,N-bis(2-chloroethyl)phosphorodiamidic-$^{15}N$ dichloride. Use of this compound in the general synthetic pathway yielded PM CHA with $^{15}N$ in the mustard moiety. $^{17}O$-Enriched PM was generated through the use of benzyl alcohol-$^{17}O$. To obtain the alcohol, labelled benzaldehyde was made by exchange with $^{17}OH_2$ and was then reduced with sodium borohydride.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.269-275
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• 1993

미래의 ULSI 소자의 게이트 산화막으로 이용하기 위하여 $N_{2}$O 가스 분위기에서 기존의 전기로를 이용한 실리콘의 열산화에 의해 $N_{2}$O 산화막을 형성하였고 MOS 소자를 제작하여 전기적 특성을 고찰하였다. 900.deg.C에서 90분간 산화한 $N_{2}$O 산화막의 경우, 플랫밴드 전압( $V_{FB}$ ), 고정전하밀도 ( $N_{f}$)와 플랫밴드 전압의 변화량(.DELTA. $V_{FB}$ )은 각각 0.81[V], 6.7x$10^{10}$[$cm^{-2}$]와 80~95[mV]를 나타내었다. $N_{2}$O 산화막의 전기전도기구는 저전계 영역에서는 Fowler-Nordheim 터널링, 고전계영역에서는 Poole-Frenkel 방출이 지배적으로 나타났고 절연파괴전계는 16[MV/cm]로 높게 나타났다. 따라서 $N_{2}$O 산화로 형성된 게이트 산화막이 ULSI소자의 게이트 유전체로 응용이 가능하리라 생각된다..

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.117-127
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• 1994

In this paper, electrical and reliability properties of N$_2$O oxides, grown at the temperature of 95$0^{\circ}C$ and 100$0^{\circ}C$ to 74$\AA$, and 82$\AA$. respectively, using NS12TO gas in a conventional furnace, have been compared with those of pure oxide grown at the temperature of 850 to 84$\AA$ using O$_2$ gas. Initial IS1gT-VS1gT characteristics of N$_2$O oxides were similar to those of pure oxide, and reliability properties of N$_2$O oxides, such as charge trapping, interface state density and leakage current at low electric field under F-N stress, were improved much better than those of pure oxide. But, with increasing capacitor area. TDDB characteristics of N$_2$O oxides were more degraded than those of pure oxide and this degradation of TDDB characteristics was more severe in 100$0^{\circ}C$ N$_2$Ooxide than in 95$0^{\circ}C$ N$_2$O oxide. The improvement of reliability properties excluding TDDB in N$_2$Ooxides was attributed to the hardness of the interface improved by nitrogen pile-up at the interface of Si/SiO$_2$, but on the other hand, the degradation of TDDB characteristics in N$_2$O oxides was obsered due to the increase of local thinning spots caused by excessive nitrogen at interface during the growth of N$_2$O oxides.

• Proceedings of the Korean Information Science Society Conference
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• 2006.10a
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• pp.511-515
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• 2006

집합이나 배열의 원소, 트리의 노드, 그래프의 정점과 간선 등과 같은 이산 객체는 일반적으로 주기억장치의 논리적 주소 값과 같은 정수로 표현되어 왔다. Succinct 표현은 이와 같은 n개의 이산 객체를 O(n) 비트에 표현하는 방법이다. 대부분의 succinct 표현은 rank와 select라는 함수를 기본적으로 사용하며, 다양한 연구들에 의해 현재 rank와 select 함수는 o(n)?? 비트만을 사용하여 ??O(1) 시간에 수행될 뿐만 아니라, 실제로도 실용적으로 구현되었다. 본 논문에서는 $n{\times}n$ 배열, 즉 2차원 비트 스트링에 대한 Rank 및 Select 함수를 새롭게 정의한다. 또한, $O(n^2log\;n)$ 비트를 사용하여 O(1) 시간에 Rank 질의를 수행하고 O(log n) 시간에 Select 질의를 수행하는 방법과, 보다 적은 $O(n^2)$ 비트를 사용하면서 O(log n) 시간에 Rank 질의를 수행하고 $O(log^2\;n)$ 시간에 Select 질의를 수행하는 방법을 제안한다. 본 논문에서 정의하는 2차원 배열 상의 Rank와 Select 함수는 이미 개발된 2차원 상의 써픽스 트리 등을 기반으로 향후 개발될 2차원 상의 압축된 인덱스 자료구조나 이미지 프로세싱 등에 유용하게 사용된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.31-33
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• 1992

This paper is studies the addition effects of $La_2O_3$ on the magnetic properties of Sr ferrite. Compositions were chosen according to the formula $[SrO{\cdot}nFe_2O_3]_{100-x}(La_2O_3)_x$. where n was varied between 5.8~6.1 and x between 0~3. The composition of the best value $(BH)_{max}$=1.48MGOe was n=6(stoichiometric composition) and x=2 at $La_2O_3$ addition. This value was higher than that of ordinary isotropic strontium ferrite.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.