• 제목/요약/키워드: $N_2O$ plasma

검색결과 545건 처리시간 0.029초

플라즈마 반응기구조에 따른 코로나방전 및 NO-NO$_2$ 전환특성에 관한 실험적 연구 (Experimental Study on the Effect of Plasma Reactor Type on Corona Discharge and NO-NO2 Conversion Characteristics)

  • 박용성;전광민
    • 한국자동차공학회논문집
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    • 제10권6호
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    • pp.65-71
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    • 2002
  • Characteristics of corona discharge of the different types of the plasma reactors which are cone-hole and cone-plate is investigated experimentally. The discharge starts at lower voltage for the cathode corona than the anode corona and spark occurs at higher voltage for the cathode corona. And the cathode corona makes more stable discharge than the anode corona. The effect of the base gas in corona discharge for different O$_2$/N$_2$ concentrations is related with the gas molecular weight. The discharge for the smaller molecular weight gas occurs easier than for the high molecular weight gas. The discharge current decreases with the increase of oxygen concentration and it increases more sharply for anode corona than for cathode corona as discharge voltage increases after corona onset voltage. NO-NO$_2$ conversion increases with the energy density of corona discharge and the addition of O$_2$ in a base N$_2$ gas.

NF3 / H2O 원거리 플라즈마 건식 세정 조건 및 SiO2 종류에 따른 식각 이방 특성 (Etching Anisotropy Depending on the SiO2 and Process Conditions of NF3 / H2O Remote Plasma Dry Cleaning)

  • 오훈정;박세란;김규동;고대홍
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.26-31
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    • 2023
  • We investigated the impact of NF3 / H2O remote plasma dry cleaning conditions on the SiO2 etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF3 flow rate, and H2O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO2 layer was situated between Si3N4 and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.

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HIPIMS Arc-Free Reactive Deposition of Non-conductive Films Using the Applied Material ENDURA 200 mm Cluster Tool

  • Chistyakov, Roman
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.96-97
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    • 2012
  • In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

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Thermal Stability and Electrical Properties of HfOxNy Gate Dielectrics with TaN Gate Electrode

  • Kim Jeon-Ho;Choi Kyu-Jeong;Seong Nak-Jin;Yoon Soon-Gil;Lee Won-Jae;Kim Jin-dong;Shin Woong-Chul;Ryu Sang-Ouk;Yoon Sung-Min;Yu Byoung-Gon
    • Transactions on Electrical and Electronic Materials
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    • 제4권3호
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    • pp.34-37
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    • 2003
  • [ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

5-(2'-(N-(1-메틸-3-(3'-카바밀페닐)-n-프로필))아미노에틸)-8-히드록시-4- 메틸카보스티릴 유도체의 합성 및 안정성 연구 (Synthesis and in Vitro Stability Evaluations of 5-(2'-(N-(1-methyl-3'-carbamylphenyl)-n-propyl))aminoethyl)-8-hydroxy-4-methylcarbostyril Derivatives)

  • 윤성화;박규순
    • 약학회지
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    • 제39권5호
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    • pp.506-510
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    • 1995
  • The 5-(2'-(N-(1-methyl-3'-carbamylphenyl)-n-propyl))aminoethyl)-8- hydroxy-4-methyl-carbostyril derivatives which have isoelectronic and isosteric structural similarity with dobutamine without having the Catechol-O-Methyltransferase (COMT) vulnerable m-hydroxy group were synthesized via 7 synthetic steps, and their stabilities in phosphate buffer solution(pH=7.4), human blood. 80% human plasma and 20% rat liver homogenate were determined in vitro condition.

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Fabrication of Graphene p-n Junction Field Effect Transistors on Patterned Self-Assembled Monolayers/Substrate

  • Cho, Jumi;Jung, Daesung;Kim, Yooseok;Song, Wooseok;Adhikari, Prashanta Dhoj;An, Ki-Seok;Park, Chong-Yun
    • Applied Science and Convergence Technology
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    • 제24권3호
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    • pp.53-59
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    • 2015
  • The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

유연성 유기 박막트랜지스터 적용을 위한 다층 게이트 절연막의 전기적 및 기계적 특성 향상 연구 (Improvement of Electrical and Mechanical Characteristics of Organic Thin Film Transistor with Organic/Inorganic Laminated Gate Dielectric)

  • 노화영;설영국;김선일;이내응
    • 한국표면공학회지
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    • 제41권1호
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    • pp.1-5
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    • 2008
  • In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

$Ca^{2+}$ Effect on Conversion of Exogenous 1-Aminocyclopropane-1-Carboxylic Acid to Ethylene in Vigna radiata Protoplasts

  • Seung-Eun Oh
    • Journal of Plant Biology
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    • 제37권3호
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    • pp.271-276
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    • 1994
  • The possibility that 1-aminocyclopropane-1-carboxylic acid (ACC)-uptake may be dependent on the H+-gradient established across the plsma membrane was tested in protoplasts isolated from 2.5 day old mungbean hypocotyls. The ACC-induced ethylene production was inhibited when the H+-gradient was collapsed by the treatment with carbonycyamide-p-trifluro-methoxy-phenylhydrazone (FCCP). Moreover, the treatment with o-vanadate, a specific inhibitor of plasma membrane H+-ATPase, caused the inhibition of ethylene production. The ACC-induced ethylene production was inhibited by the treatemnt with verapamil (Ca2+-channel blocker), or ethylene glycol-bis($\beta$-aminoethyl ether) N, N, N', N'-tetraacetic acid (EGTA) (Ca2+-chelator). In contrast, the ehtylene production was stimulated by the application of A23187 (Ca2+ ionophore). The inhibitory effect of EGTA in the ethylene producton was magnified in the presence of A23187. From these results, we suggest that the external Ca2+ influx to the cytosol resulted in the stimulatin of ACC oxidase activity after ACC-uptake resulting from a H+-gradient across the plasma membrane.

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$TiO_2$ 촉매를 이용한 플라즈마반응에 의한 NOx의 분해 (Reduction and Decomposition of Hazardous NOx by Discharge Plasma with $TiO_2$)

  • 박성국;우인성;황명환
    • 한국안전학회지
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    • 제23권5호
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    • pp.54-60
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    • 2008
  • The objective of this study is to obtain the optimal process condition and the maximum decomposition efficiency by measuring the decomposition efficiency, electricity consumption, and voltage in accordance with the change of the process variables such as the frequency, maintaining time period, concentration, electrode material, thickness of the electrode, the number of windings of the electrode, and added materials etc. of the harmful atmospheric contamination gases such as NO, $NO_2$, and $SO_2$ etc. with the plasma which is generated by the discharging of the specially designed and manufactured $TiO_2$ catalysis reactor and SPCP reactor. The decomposition efficiency of the NO, the standard samples, is obtained with the plasma which is being generated by the discharge of the combination effect of the $TiO_2$ catalysis reactor and SPCP reactor with the variation of those process variables such as the frequency of the high voltage generator($5{\sim}50kHz$), maintaining time of the harmful gases($1{\sim}10.5sec$), initial concentration($100{\sim}1,000ppm$), the material of the electrode(W, Cu, Al), the thickness of the electrode(1, 2, 3mm), the number of the windings of the electrode(7, 9, 11turns), basic gases($N_2$, $O_2$, air), and the simulated gas($CO_2$) and the resulting substances are analyzed by utilizing FT-IR & GC.

Consumption of Oxidized Soybean Oil Increased Intestinal Oxidative Stress and Affected Intestinal Immune Variables in Yellow-feathered Broilers

  • Liang, Fangfang;Jiang, Shouqun;Mo, Yi;Zhou, Guilian;Yang, Lin
    • Asian-Australasian Journal of Animal Sciences
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    • 제28권8호
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    • pp.1194-1201
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    • 2015
  • This study investigated the effect of oxidized soybean oil in the diet of young chickens on growth performance and intestinal oxidative stress, and indices of intestinal immune function. Corn-soybean-based diets containing 2% mixtures of fresh and oxidized soybean oil provided 6 levels (0.15, 1.01, 3.14, 4.95, 7.05, and $8.97meqO_2/kg$) of peroxide value (POV) in the diets. Each dietary treatment, fed for 22 d, had 6 replicates, each containing 30 birds (n = 1,080). Increasing POV levels reduced average daily feed intake (ADFI) of the broilers during d 1 to 10, body weight and average daily gain at d 22 but did not affect overall ADFI. Concentrations of malondialdehyde (MDA) increased in plasma and jejunum as POV increased but total antioxidative capacity (T-AOC) declined in plasma and jejunum. Catalase (CAT) activity declined in plasma and jejunum as did plasma glutathione S-transferase (GST). Effects were apparent at POV exceeding $3.14meqO_2/kg$ for early ADFI and MDA in jejunum, and POV exceeding $1.01meqO_2/kg$ for CAT in plasma and jejunum, GST in plasma and T-AOC in jejunum. Relative jejunal abundance of nuclear factor kappa B ($NF-{\kappa}B$) P50 and $NF-{\kappa}B$ P65 increased as dietary POV increased. Increasing POV levels reduced the jejunal concentrations of secretory immunoglobulin A and cluster of differentiation (CD) 4 and CD8 molecules with differences from controls apparent at dietary POV of 3.14 to $4.95meqO_2/kg$. These findings indicated that growth performance, feed intake, and the local immune system of the small intestine were compromised by oxidative stress when young broilers were fed moderately oxidized soybean oil.