• Journal of Periodontal and Implant Science
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• v.29 no.1
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• pp.209-231
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• 1999

Even though titanium(Ti) and its alloys are the most used dental implant materials, there are some problems that Ti wears easily and interferes normal osteogenesis due to the metal ions. Ti coated with bioactive ceramics such as hydroxyapatite has also such problems as the exfoliation or resorption of the coated layer, Recent studies on implant materials have been proceeding to improve physical properties of the implant substrate and biocompatibility of the implant surfaces. The purpose of the present study was to examine the physical property and bone tissue compatibility of bioinert nitrides ion plated Ti, Button type specimens(14mm in diameter, 2.32rrun in height) for the abrasion test and cytotoxicity test and thread type implants(3.75mm in diameter, 6mm in length) for the animal experiments were made from Ti(grade 2) and 316LVM stainless steel. Ti specimens were ion plated with TiN, ZrN by the low temperature arc vapor deposition, and the depth profile of the TiN/Ti, ZrN/Ti ion plated surface was examined by Auger Electron Spectroscopy. Three kind of button type specimens .of TiN/Ti, ZrN/Ti and Ti were used for abrasion test, and HEPAlClC7 cells and CCD cells were cultivated for 4 days with the specimens for cytotoxicity test. Thread type implants of TiN/Ti, ZrN/Ti, Ti, 316LVM were implanted on the femur of 6 adult dogs weighing 10kg-13kg. Two dogs were sacrified for histological examination after 45 days and 90 days, and four dogs were sacrified for the removal torque test of the implant') after 90 days. The removal torque force was measured by Autograph (Shimadzu Co., AGS-1000D series, Japan). Abrasion resistance of TiN/Ti was the highest, and that of ZrN/Ti and Ti were followed. The bioinert nitride ion plated Ti had much better abrasion resistance, compared with Ti, In the cytotoxicity test, the number of both cells were increased in all specimens, and there were no significant difference in cytotoxic reaction among all groups (p>0.1), In histological examination, 316LVM showed the soft tissue engagement in interface between the implant and bone, but the other materials after 45 days noted immature new bone formation in the medullary portion along the implant surface, and those after 90 days showed implant support by new bone formation in both the cortical and the medullary portion, The removal torque force of Tilv/Ti showed significantly higher than that of Ti(p(O,05). The difference in removal torque force between TiN/Ti and ZrN/Ti was not significant(p>0.05), and that of 316LVM was lowest among all groups(p<0.05). These results suggest that bioinert nitrides ion plated Ti can resolve the existing problems of Ti and bioactive ceramics, and it may be clinically applicable to human.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.2
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• pp.210-225
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• 2004

Statement of problem: Implant screw loosening has been remained problem in restorative practices. Surface treatment of screw plays a role of preventing screw from loosening in implant screw mechanism. Purpose : The purpose of this study was to investigate surface characteristics of TiN and ZrN film ion plated screw with titanium and gold alloy screw and to evaluate wear resistance, surface roughness, and film adhesion on screw surface using various instruments. Material and methods : GoldTite screws and titanium screws provided by 3i (Implant Innovation, USA) and TorqTite screws or titanium screws by Steri-Oss (Nobel Biocare, USA) and gold screws and titanium screws by AVANA (Osstem Implant, korea) were selected. Ion plating which is much superior to other surface modification techniques was carried out for gold screws and titanium screws using Ti and Zr coating materials with nitrogen gas. Ion nitrided surface of each abutment screw was observed with field emission scanning electron microscopy (FE-SEM, micro-diamond scratch tester, vickers hardness tester, and surface roughness tester. Results : 1) The surface of gold screw and GoldTite is more smooth than ones of other kinds of non coated screw. 2) The ZrN and TiN coated surface is the more smooth than ones of other kinds of screw. 3) The hardness of TiN and ZrN coated surface showed higher than that of non coated surface. 4) The TiN coated titanium screw and ZrN coated gold screw have a good wear resistance and adhesion on the surface. 5) The surface of ZrN coated screw showed low surface roughness compared with the surface of TiN coated screw. Conclusion : It is considered that the TiN and ZrN coated screw which would prevent a screw from loosening can be applicable to implant system and confirmed that TiN and ZrN film act as lubricant on surface of screw due to decrease of friction for recycled tightening and loosening.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.5-6
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• 2009

In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.237.1-237.1
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• 2011

Resistivity of GaN has been investigated under the influence of ion implantation. n-type, p-type and also undoped GaN has been used here. A ring shape pattern of Au was fabricated on GaN film by the photolithography technique. H, He and Ar were used for implantation. The ion implantation energy, fluence and post-implant annealing temperature varied in this research. Because of the making barrier in some selected area using ions, the resistivity changed in all the samples with the change of both fluence and energy. At room temperature, the resistivity of n-type GaN has been increased from $1.9{\times}10-2$ to $17.7{\times}10-2\;{\Omega}-cm$. This is high for He ion. But undoped and p-type GaN showed some anomalous character.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.307-317
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• 1994

The surf ace microstructure modification by $N^+$ ion implantation into 7050Al alloy and its low cycle fatigue behavior were investigated. Ion implantation method is to physically implant accelerated ions to the surface of a substrate. High dose of nitrogen($5{\times}10^{17}ions/cm^2$) were implanted into 7050Al alloy using current density of accellerating voltage of 100KeV. The implanted layers were characterized by Electron Probe-Micro Analysis(EPMA), Auger Elecron Spectroscopy(AES), X-Ray Diffraction(XRD), X-Ray Photoelectron Spectroscopy(XPS), and Transmission Electron Microscopy(TEM). The experimental results were compared with computer simulation data. It was shown that AlN was formed to 4500 ${\AA}$ deep. The low cycle fatigue life of the $N^4$ion modified material was prolonged by about three times the unimplanted one. The improved low cycle fatigue life was attributed to the formation of AlN and the damaged region on the surface by $N^+$ ion implantation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1375-1381
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• 2018

In this paper, we studied coatings of the DLC thin film for improving loosening torque of dental implant screw. We used a filtered arc ion plating process which can realize the most dense DLC layer by coating the DLC thin film on the surface of the dental abutment screw. It showed both hardness comparable to diamond and low friction coefficient similar to graphite, and to improve the loosening phenomenon by increasing the screw tightening force Cr/CrN, Ti/TiN or Ti/TiN/Cr/CrN buffer layers were deposited for 5 to 10 minutes to improve the adhesion of the DLC thin film to the surface of the Ti (Gr.5), and then the DLC thin film was coated for about 15 minutes. As a result, the Cr/CrN buffer layer exhibited the highest hardness of 29.7 GPa, the adhesion of 18.62N on average, and a very low coefficient of friction of less than 0.2 as a whole. And we measured loosening torque after one million times with masticatory movement simulator. As a result, the values of the coated screw loosening torque were clearly higher than those of the uncoated screw. From this, it was found that the DLC coating was effective methods improving the loosening torque. In addition, it was confirmed that the cytotoxicity test and cell adhesion test showed high biocompatibility.

• Analytical Science and Technology
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• v.7 no.4
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• pp.527-540
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• 1994

The surface microstructure modification by $N^+ion$ implantation into 7050A1 alloy was investigated. Ion implantation method is to implant physically accelerated ions to the surface of a substrate. High doses of nitrogen($5{\times}10^{15}ions/cm^2$, $5{\times}10^{17}ions/cm^2$, $8{\times}10^{17}ions/cm^2$) were implanted into 7050A1 alloy using accelerating voltage of 100KeV and current density of $23.1{\mu}A/cm^2$. The implanted layers were characterized by EPMA, AES, XRD, and TEM. The experimental results were compared with computer simulation data. The results showed that AlN was formed from the surface to $4000{\AA}$ depth with Gaussian distribution and the damage region was also observed. This surface modification by $N^+ion$ implantation increased the microhardness of 7050A1 alloy surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• Journal of Biomedical Engineering Research
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• v.25 no.2
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• pp.157-163
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• 2004

Nitrogen ion implantation and ion plating techniques were applied for improvement of the wear resistance of metallic implant materials. In this work, the wear dissolution behaviour of a nitrogen ion implanted super stainless steel (S.S.S, 22Cr-20Ni-6Mo-0.25N) was compared with those of S.S.S, 316L SS and TiN coated 316L SS. The amounts of Cr and Ni ions worn-out from the specimens were Investigated using an electrothermal atomic absorption spectrometry. Furthermore, the Ti(Grade 2) disks were coated with TiN, ZrN and TiCN by use of low temperature arc vapor deposition and the wear resistance of the coating layers was compared with that of titanium. The chemical compositions of the nitrogen ion implanted and nitride coated layers were examined with a scanting auger electron spectroscopy. It wat observed that the metal ions released from the nitrogen ion implanted S.S.S surface were significantly reduced. From the results obtained, it was shown that the nitrogen ion implanted zone obtained with 100 KeV ion energy was easily removed within 200,000 revolutions from a wear dissolution testing under a similar load condition when applied to artificial hip joint. The remarkable improvement in wear resistance weir confirmed by the nitrides coated Ti materials and the wear properties differ greatly according to the chemical composition of the coating layers. for specimens with the same coating thickness of about 3$\mu\textrm{m}$, TiCN coated Ti showed the highest wear resistance. However, after removing the coating layers, the wear rates of all nitrides coated Ti reverted to their normal rates of below 10,000 revolutions from Ti-disk-on-disk wear testing under the same load condition. From the results obtained, it is suggested that the insufficient depth of the 100 Kel N$\^$＋/ ion implanted zone and of the nitrides coated layers of 3$\mu\textrm{m}$ are subject to restriction when used as frictional parts of load bearing implants.