• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.123-124
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• 2011

플라즈마 화학적 기상 증착(plasma enhanced chemical vapor deposition)공정 중 NH3 gas flow rate, RF power, SiH4 gas flow rate을 고정시키고 N2O gas flow rate을 0 sccm부터 250 sccm까지 변화시키는 조건 하에 SiON박막을 증착한 후 그 투과율, 굴절률을 측정하고 분석하였다. N2O gas flow rate조건별 시편들은 증착율을 계산하여 350 nm 두께로 동일하게 SiON을 증착하였고, borofloat위에 SiON을 증착한 샘플은 투과율을, 실리콘기판 위에 SiON을 증착한 샘플로는 굴절률을 측정하였다. 투과율의 경우는 UV/Vis spectrometer를 이용해 633 nm, 1550 nm 두 가지 파장 대 모두에서 N2O gas flow rate이 가장 큰 250 sccm일 때 가장 높은 것을 알 수 있었고 N2O gas flow rate이 낮아질수록 투과율 또한 작아지는 경향을 보였다. 굴절률은 ellipsometer를 이용해 측정하였으며 633 nm 파장에서 N2O gas flow rate가 가장 낮은 0 sccm일 때 굴절률이 가장 큰 값을 가지고 N2O gas flow rate이 커질수록 굴절률은 지수함수적으로 감소되었다(n=1.837~1.494). 이는 N2O gas flow rate이 낮을수록 SiN계열에 커질수록 SiO2계열에 가까워지는 현상으로 이해된다. 이러한 실험분석 결과는 향후 실리카 도파로의 설계 및 최적화를 위해 사용될 수 있다.

• 한국진공학회지
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• 제16권4호
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• pp.298-304
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• 2007

rf 플라즈마 소스가 장착된 분자선 에피택시 장비를 이용하여 Si(111) 기판위에 GaN 나노로드를 성장할 때, N2의 흐름양을 조절하여 나노로드의 구조 및 광학적인 특성을 조사하였다. $N_2$의 양이 1.1sccm에서 2.0sccm으로 변할 때 육각형 모양의 나노로드가 성장되었으며, 평균 직경이 80nm에서 190nm 까지 변화 하였다. 그러나 나노로드와 compact한 영역의 길이 (두께)비는 $N_2$의 양이 1.7sccm 까지는 증가하지만 그 이상에서는 변화지 않았다. PL 측정으로부터, $N_2$의 양이 적은 나노로드에서 자유 엑시톤의 피이크가 더욱 뚜렷하게 관측되었고, 모든 PL 피이크의 위치는 직경이 적을수록 나노로드의 크기 효과에 의해서 고에너지 쪽으로 이동하였다. $N_2$의 양이 1.7sccm 인 시료에서는 온도에 따른 PL의 피이크의 위치가 온도가 증가함에 따라서 "S-형"의 거동을 나타내었다.

• The Korean Journal of Ecology
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• 제6권2호
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• pp.81-89
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• 1983

The change of environmental factors with flow rates were studied quantitatively for two rivers, the Nakdong River and the Sin stream, which have different basins in ecosystem structures, during short period after a heavy rain. In the Nakdong River, transparency, DO, alkalinity and hardness were negatively correlated with the flow rate by logarithmic function, but the concentration of SiO2 was relatively constant regardless of the flow chage. In the Sin stream, transparency, alkalinity, hardness and the concentration of NH3-N, NO2-N and SO4= showed negative correlation with the flow rate by logarithmic function. The ratios of maximum to minimum values for aquatic environmental factors during the samller than that for flow rate in the respective rivers (28 in the Nakdong R.; 50 in the Sin S.). Immediately after the heavy rain, the concentrations of NO2-N, NH3-N and PO4-P in the Sin stream were 8, 6 and 1 times as high as those in the Nakdong River, respectively, but in the stable flow state, those became 94, 25 and more than 10 times, respectively. The load for most of the dissolved environmental constituents changed similarly to the flow rate in both rivers. It is notable that, at the stable flow state, the loads for NH3-N (59g/sec) and NO2-N (3.3g/sec) in the Sin stream were 4.3 and 1.3 times as high as those in the Nakdong River.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.188-195
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• 1996

The AlSi etching process using the MERIE type reactor carried out with different process parameters such as C1$_{2}$ and N$_{2}$ gas flow rate, RF power and chamber pressure. The etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. As the N2 gas flow rate is increased, the AlSi etch rate is decreased and uniformity has remained constant within .+-.5%. The etch rate is increased and uniformity is decreased, according to increment of the C1$_{2}$ gas flow rate, RF power and chamber pressure. Selective etching of TEOS with respect to AlSi is decreased as the RF power is increased while it is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, on the other hand, selective etching of photoresist with respect to AlSi is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, it is decreased as the N$_{2}$ gas flow rate is increased.

• 한국방사선학회논문지
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• 제14권1호
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• pp.53-60
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• 2020

이 연구의 목적은 Roadmap 영상에서 화질에 영향을 미치는 인자들을 알아보기 위한 것으로, 조영제의 희석률, Collimation Field, Flow Rate를 변화하여 연구를 하였다. 화질의 정량적인 평가를 위해, 아크릴를 이용하여 3mm 혈관모형의 Water Phantom을 자체 제작하였고, 자체 제작한 혈관모형의 Water Phantom으로 Roadmap 영상을 획득하고, SNR(Signal to Noise Ratio)과 CNR(Contrast to Noise Ratio)을 분석하였다. CM : N/S 희석률 변화에 대한 연구에서 CM : N/S 희석률을 (100%~10% : 100%)로 변화를 주었으며, 혈관모형 Water Phantom을 이용하여 촬영한 Roadmap 영상의 SNR과 CNR의 측정 결과 CM에 N/S 희석률이 높아질수록 SNR의 측정값이 점차적으로 낮아짐을 나타났고, CNR의 측정값도 점차적으로 낮아짐을 나타났다. 결론적으로 CM : N/S의 희석률이 높아질수록 SNR과 CNR 낮아짐을 확인하였고, CM : N/S의 희석률(100%~70 : 30%)에서 유의한 이미지를 얻을 수 있음을 확인하였다. Collimation Field 변화에 대한 연구에서 혈관모형 Water Phantom을 이용하여 Colimation Field를 혈관모형 중심으로 좌, 우 2 cm 간격으로 좁히면서 0 cm, 2 cm, 4 cm, 6 cm, 8 cm 10 cm, 12 cm으로 각각 변화를 주었으며, Roadmap을 촬영한 영상의 SNR과 CNR의 측정 결과는 Collimation Field를 혈관모형 중심으로 좁힐수록 SNR과 CNR의 측정값이 증가하는 것을 확인할 수 있었다. Flow rate 변화에 대한 연구에서 Autoinjector의 Volume을 15로 일정하게 하고, Flow Rate를 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 으로 각각 변화를 주었다. 혈관모형 Water Phantom을 이용하여 Roadmap 영상을 촬영한 이미지의 SNR과 CNR의 측정 결과 Flow Rate를 증가했을 때, SNR의 측정값이 점차적으로 감소하다가 Flow Rate 9~10에서 SNR의 측정값이 점차적 증가를 보였고, CNR의 측정값도 점차적으로 감소하다가 Flow Rate 9~10에서 CNR의 측정값이 점차적으로 증가를 보였다. 그러나 ROI Mean 값과 Background Mean 값으로 SNR과 CNR의 상관관계를 확인할 수 없었다. 상관관계를 확인하기 위해 Flow Rate 변화에 따른 Roadmap 연구는 향후 더 많은 연구로 확인해야 할 것으로 사료된다. 결론적으로 Roadmap 영상의 화질에 영향을 미치는 인자들을 알아보기 위해 조영제의 희석률, Collimation Field, Flow Rate 변화에 대한 연구에서 조영제에 N/S의 희석률이 증가할수록 SNR과 CNR이 낮아져 화질과 대조도가 낮아지는 것을 확인하였으며, Collimation Field를 좁힐수록 SNR과 CNR이 증가하여 화질과 대조도가 높아지는 것을 확인하였다. 그러나 Flow Rate 변화에 대한 연구에서는 상관관계를 확인할 수 없었다. 검사 및 시술을 할 때 신장의 영향을 최소화하기 위해 적절한 조영제 농도 선택과 대조도 향상 및 피폭 감소를 위한 적절한 Collimation Field를 사용하는 것이 유용할 것으로 판단된다.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• 한국표면공학회지
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• 제15권3호
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• pp.138-145
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• 1982

The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

• 한국표면공학회지
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• 제34권2호
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• pp.89-96
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• 2001

N- or O-doped STS304 stainless films were synthesized by an unbalanced magnetron sputtering process with various argon and reactive gas ($N_2$, $O_2$) mixtures. These films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and Knoop microhardness tester. The Results from X-ray diffraction (XRD) analysis showed that a STS304 stainless steel film synthesized without reactive gas using a bulk STS304 stainless steel target had a ferrite bcc structure ($\alpha$ phase), while the N-doped STS304 stainless film was consisted of a nitrogen supersaturated fcc structure, which hsa a strong ${\gamma}$(200) phase. In the O-doped films, oxide Phases ($Fe_2$$O_3$ and $Cr_2$$O_3$) were observed from the films synthesized under an excess $O_2$ flow rate of 9sccm. AES analysis showed that nitrogen content in N-doped films increased as the nitrogen flow rate increased. Approximately 43 at.%N in the N-doped film was measured using a nitrogen flow rate of 8sccm. In O-doped film, approximately 15 at.%O was detected using a $O_2$ flow rate of 12sccm. the Knoop microhardness value of N-doped film using a nitrogen flow rate of 8 sccm was measured to be approximately $H_{ k}$ 1200 and this high value could be attributed to the fine grain size and increased residual stress in the N-doped film.