• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.17-20
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• 2003

This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.45-50
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• 1984

V-groove N+P solar cell is fabricated by thermal diffusion in silicon wafer with (100) crystal structure. To form the V-grooves in (100) silicon surface, a mixture of etylen-diamine, water, pyrocathecol is used as the etchant of anisotropic etching. Under light intensity of 100mW/$\textrm{cm}^2$, the efficiency of the V-groove solar cell is 2.5-3.5% greater than the conventional N+P solar cell and 0.4-0.6% greater than the texturized one.

• Journal of the Korean Society of Safety
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• v.18 no.3
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• pp.64-68
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• 2003

ITO_{(n)}/Si_{(p)}$ solar cell is fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The maximum output of fabricated solar cell is obtained when the composition of the thin film is consisted of indium oxide 91[mole %] and tin oxide 9(mole %). The solar cell electrical charateristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min].

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.37-44
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• 2018

Solar panels are modules made up of many cells, like the N-type monosilicon, P-type monosilicon, P-type multisilicon, amorphous thin-film silicon, and CIGS solar cells. An efficient photovoltaic (PV) power is important to use to determine what kind of cell types are used because residential solar systems receive attention. In this study, we used 3-type solar panels - such as N-type monosilicon, P-type monosilicon, and CIGS solar cells - to investigate what kind of solar panel on a house or building performs the best. PV systems were composed of 3-type solar panels on the roof with each ~1.8 kW nominal power. N-type monosilicon solar panel resulted in the best power generation when monitored. Capacity Utilization Factor (CUF) and Performance Ratio (PR) of the N-type Si solar panel were 14.6% and 75% respectively. In comparison, N-type monosilicon and CIGS solar panels showed higher performance in power generation than P-type monosilicon solar power with increasing solar irradiance.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Journal of the Optical Society of Korea
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• v.19 no.2
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• pp.199-205
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• 2015

We investigated the effects of the thickness and doping concentration in p- and n-type poly-Si layers on the performance of a solar cell based on a carbon fiber in order to improve the energy conversion efficiency of the cell. The short-circuit current density and open-circuit voltage of the carbon fiber-based solar cell were significantly influenced by the thickness and doping concentration in the p- and n-type poly-Si layers. The solar cell efficiency was successfully enhanced to ~10.5%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.162-167
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• 2013

An epitaxial layer structure for heterojunction p-InGaP/N-InAlGaP solar cell has proposed. Simulation for current density-voltage characteristics has been performed on p-InGaP/N-InAlGaP structure and the simulation results were compared with p-InGaP/p-GaAs/N-InAlGaP structure and homogeneous InGaP pn junction structure. The simulation result showed that the maximum output power and fill factor have greatly increased by replacing n-InGaP with N-InAlGaP. The thicknesses of p-InGaP and n-InAlGaP were optimized for the epitaxial layer structure of p-InGaP/N-InAlGaP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.450-451
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• 2008

Amorphous silicon Solar cell has n-i-p structure in general, and each layer's thickness and doping concentration are very important factors which are as influential on efficiency of salar cell. Using AFORS HET simulation to get the high efficiency, by adjusting n layer's thickness and doping concentration, p layer's doping concentration. The optimized values are a-Si:H(n)'s thickness of 1nm, a-Si:H(n)r's doping concentration of $2\times10^{20}cm^{-3}$, a-Si:H(p+)r's doping concentration of $1\times10^{19}cm^{-3}$. After optimization, the solar cell shows $V_{oc}$=679.5mV, $J_{sc}$=39.02mA/$cm^2$, FF=83.71%, and a high Efficiency=22.21%. Though this study, we can use this study for planning or manufacturing solar cell which has high efficiency.