• Journal of IKEEE
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• v.21 no.3
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• pp.252-255
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• 2017

$Mo_xW_{1-x}Si_2$ heaters were fabricated by self-propagating high-temperature synthesis (SHS) process and post sintering process. To validate the reliability of the $Mo_xW_{1-x}Si_2$ heaters, the accelerated life test (ALT) was conducted, and then lifetime to $Mo_xW_{1-x}Si_2$ heaters was estimated by using Minitab programs. Also, the failure analysis of $Mo_xW_{1-x}Si_2$ heaters after ALT was performed through electrical and structural properties. As the results, it was confirmed that the dominant failure mode of $Mo_xW_{1-x}Si_2$ heaters is the crack formation in heaters and the delamination of protective $SiO_2$ layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.631-636
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• 2017

The degradation mechanism of $Mo_xW_{1-x}Si_2$ ultrahigh-temperature heating elements fabricated by self-propagating high-temperature synthesiswas investigated. The $Mo_xW_{1-x}Si_2$ specimens (with and without post-annealing) were subjected to ADTs (accelerated degradation tests) at temperatures up to $1,700^{\circ}C$ at heating rates of 3, 4, 5, 7, and $14^{\circ}C/min$. The surface loads of all the specimen heaters were increased with the increase in the target temperature. For the $Mo_xW_{1-x}Si_2$ specimens without annealing, many pores and secondary-phase particles were observed in the microstructure; the surface load increased to $23.9W/cm^2$ at $1,700^{\circ}C$, while the bending strength drastically reduced to 242 MPa. In contrast, the $Mo_xW_{1-x}Si_2$ specimens after post-annealing retained $single-Mo_xW_{1-x}Si_2$ phases and showed superior durability after the ADT. Consequently, it is thought that the formation of microcracks and coarse secondary phases during the ADT are the main causes for the degraded performance of the $Mo_xW_{1-x}Si_2$ heating elements without post-annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.200-207
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• 2020

MoSi₂, (Mo_1/2W_1/2)Si₂, and WSi₂ powders were synthesized by self-propagating high-temperature synthesis (SHS) method. The synthesized powders were heat-treated at 500, 1,000, 1,200, 1,300, 1,400, 1,500 and 1,600℃ in ambient atmosphere. Oxidation of Mo-W silicide powder was found at low temperature of 500℃. XRD structure analysis and DTA/TG data showed that MoO₃ was formed with 500℃ heat treatment for 1 hour, and that it was α-cristobalite phase that was formed with 1200℃ heat treatment, not α-quartz phase which is commonly found and stable at room temperature. Existence of W accelerated decomposition at both low and high temperature. Fully sintered MoSi₂ and (Mo_1/2W_1/2)Si₂ specimen did not show decomposition or weight loss by oxidation, with 1 hour heat treatment at either low or high temperature. Notably, it was difficult to sinter WSi₂ because of oxidation reaction at low temperature.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.92-98
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• 1999

(Mo.W)Si$_2$ composites were fabricated by vacuum hot-pressing elemental Mo, W and Si powders at various temperatures. Elemental Mo, W and Si powders were alloyed in the proper proportions to form solid solutions. The microstructure and properties of these materials was characterized by using x-ray diffraction, optical microscopy, energy dispersive x-ray spectroscopy and Vicker's technique. It was found that tungsten was mainly substituted for Mo atoms, and made a completed solid solution of (Mo.W)Si$_2$ over 1$600^{\circ}C$. The lattice parameters and Vickers hardness increased largely with increasing reaction temperature by the most soluble elements, due to the solid-solution hardening.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.05b
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• pp.745-752
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• 1995

고연소도 액체금속로용 금속연료를 개발하고자 U-l0wt%Zr 합금중 Zr 원소 대신에 X(:Si, Ta, Nb, W, Mo) 원소를 첨가한 U-7wt%Zr-3wt%X(:Si, Ta, Nb, W, Mo) 합금을 제조하여 미세조직에 미치는 합금원소 첨가의 영향을 조사하였다. 그 결과 U-7 wt%Zr-3wt%Si 합금을 제외한 모든 U-7wt%Zr-3wt%X(:Ta, Nb, W, Mo) 합금은 Matrix에 있어서 Laminar Structure를 그대로 유지하였다. U-7wt%Zr-3wt%Si 함금을 제외한 모든 U-7wt%Zr-3wt%X(:Ta, Nb, W, Mo) 합금의 주요한 상은 U-l0wt% Zr 합금과 마찬가지로 $\alpha$-U 및 $\delta$-UZr$_2$ 상이었다. U-7wt%Zr-3wt%X(:Ta, Nb, W, Mo) 합금은 U-l0wt%Zr 합금에 비해 Lamina Thickness가 크게 감소되었다. 특히 U-7wt%Zr-3wt%Mo 합금의 경우에 있어서는 U-l0wt%Zr 합금에 비해 1/3배 정도까지 Lamina Thickness가 크게 감소하였다. 이와 같은 합금원소 첨가에 의한 Laminar Structure의 미세화는 액체금속로강 금속연료내 Fission Gas의 Inter-connected Path가 보다 더 잘 형성됨으로 인해 Fission Gas Bubble에 대한 방출속도를 크게 증가시켜서 궁극적으로는 Fission Gas Bubble에 의한 Swelling을 저감시킬 것으로 기대된다.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.102-106
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• 1997

Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of $SiN_{x}/SiO_{x}/(NON)$ films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of $SiN_{x}$ and NON films arc $7.6{\times}10^{8}dyne/cm^2$ and $3.3{\times}10^{8}dyne/cm^2$, respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressi\e stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by $2.74W/cm^2$ to $1.10W/cm^2$. The hest value of film stress obt;~ined under condition of lOmtorr and $1.37W/cm^2$ in this' experiment was $1.2{\times}10^{9}dyne/cm^2$ cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy $2.74W/cm^2$ to $1.10W/cm^2$. Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1325-1326
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• 2006

Tungsten-molydiside $W_xMo_{1-x}Si_2$ was synthesized by self-propagating high temperature synthesis (SHS). The SHS product with the initial composition of (0.5Mo+0.5W+2Si) contains 23.9% $MoSi_2$, 40.89% $WSi_2$ with remaining 9.11% Mo, 9.16% Si and 16.94%W. Lattice parameters of the $MoSi_2$ and $WSi_2$ determined by Rietvelt analysis were a=0.3206 nm, c=0.7841 nm and a=0.3212 nm, c=0.7822 nm, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1008-1015
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• 2002

The fabricated La-modified lead titanate (PLT) thin film without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$(x=0.1) (PLT(10)) thin film haying 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}C$$textrm{cm}^2$$.$K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03 x $10^{-11}C$.cm/J and 1.46 x $10^{-10}C$.cm/J, respectively The PLT(10) thin film has voltage responsivity (RV) of 5.IS V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity ($D^{*}$) of the PLT(10) thin film are 9.93 x $10^{-8}$W/$Hz^{1/2}$ and 1.81 x $10^{6}$cm.$Hz^{1/2}$/W at the same frequency of 100 Hz,, respectively The results means that PLT thin film having 10 mol% La content is suitable for the sensing materials of pyroelectric IR sensors.

• Journal of the Korean Magnetics Society
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• v.1 no.1
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• pp.12-16
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• 1991

The effect of annealing on the magnetic properties and the microstructures of the amorphous $Fe_{76-x}Cu_1Mo_xSi_{14}B_9$(x=2,3) alloys were investigated. When annealed at 500${^{\circ}C}$ for 1hr, $8{\sim}9{\times}10^3$ of the effective permeability and 3~4 A/m of the coercive force were achieved upon crystallization to $\alpha$-Fe phase. And the average diameter of the $\alpha$-Fe grains was about 20nm. For the nanovrystalline ferromagnets. the fine grain size is the important requirement to obtain a good soft magnetic property. In this work, in order to get the finer grain size of $\alpha$-Fe phase, two-step annealing treatment was given. That is, following the low-temperature at $400{^{\circ}C}$ for 1~3hr, the high-temperature annealing at $500{^{\circ}C}$ for 1hr was carried out. As the low-temperature annealing time increased, the effective permeability increased to $1.2{\sim}1.7{\times}10^4$ and the coercive force decreased to about 2 A/m. And the grain size was observed to be smaller than 10nm. The increased permeability and the decreased coercive force were attributed to the reduced average crystalline anisotropy by the refinement of $\alpha$-Fe(Si) grains.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.938-944
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• 1998

$MoSi_2$/W composites were fabricated by vacuum hot press at $1600^{\circ}C$ under 30MPa for 3 hrs. The effects of the amount of tungsten in the composites was explained in terms of the microstructure and mechanical properties. Although tungsten was mainly substituted to Mo atoms forming a complete solid solution of (Mo.W).Si, (x= 1, 5, y=2, 3). the grain size of composites became smaller with the increase of tungsten added. Vickers hardness was increased with the increase of tungsten content due to the solid-solution hardening. On the other hand, toughness of composites decreased sharply by increasing the amount of tungsten. Optimum tungsten amount was determined to be a 10 vol% of composite. Indentation fracture toughness was calculated to be 4.5MPa\sqrt{m}$ in this composites, compared with $2.7MPa\sqrt{m}$ in pure $MoSi_2$.