• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.605-608
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• 2001

Molybdenum disilicide is widely used for manufacturing high-temperature heating elements owing to its low electrical resistivity, good thermal conductivity, and ability to withstand oxidation at high temperatures. MoSi$_2$heating elements with 4-5wt% of montmorillonite type bentonite as plasticzer and a small amount of Si$_3$N$_4$, ThO$_2$, and B as additives was manufactured. Extruded rods of 3.7mmø and 6.7mmø diameter and 400mm long were fabricated using a vacuum extruder, which were then sinrered for 4-5 hrs. at the max. temperrature of 140$0^{\circ}C$. After 10 minute's oxidation treatment, the diameter of the rod is reduced. The heating elements thus prepared was stable at 1$700^{\circ}C$ and the physical properties such as specific electrical resistivity, hardness, apparent densisty, thermal expansion coefficient, and bending strength were almost identical with thoes of commercial heating elements. In this study we have tried to gain the practical knowledge of manufacturing MoSi$_2$heating elements so that it may be utilized later in a research of pilot scale and eventually be transferred to industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.155-160
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• 2020

Ga₂O₃/n-type 4H-SiC heterojunction diodes were fabricated by RF magnetron sputtering. The optical properties of Ga₂O₃ and electrical properties of diodes were investigated. I-V characteristics were compared with simulation data from the Atlas software. The band gap of Ga₂O₃ was changed from 5.01 eV to 4.88 eV through oxygen annealing. The doping concentration of Ga₂O₃ was extracted from C-V characteristics. The annealed oxygen exhibited twice higher doping concentration. The annealed diodes showed improved turn-on voltage (0.99 V) and lower leakage current (3 pA). Furthermore, the oxygen-annealed diodes exhibited a temperature cross-point when temperature increased, and its ideality factor was lower than that of as-grown diodes.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.21-26
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• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.

• Applied Chemistry for Engineering
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• v.17 no.4
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• pp.349-356
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• 2006

We have investigated adsorption and desorption properties of CO adsorption on silica supported Ru/Ni alloys at various Ru/Ni mole content ratio as well as CO partial pressures using Fourier transform infrared spectrometer (FT-IR). For Ru-$SiO_{2}$ sample, four bands were observed at $2080.0cm^{-1}$, $2021.0{\sim}2030.7cm^{-1}$, $1778.9{\sim}1799.3cm^{-1}$, $1623.8cm^{-1}$ on adsorption and three bands were observed at $2138.7cm^{-1}$, $2069.3cm^{-1}$, $1988.3{\sim}2030.7cm^{-1}$ on vacumn desorption. For Ni-$SiO_{2}$ sample, four bands were observed at $2057.7cm^{-1}$, $2019.1{\sim}2040.3cm^{-1}$, $1862.9{\sim}1868.7cm^{-1}$, $1625.7cm^{-1}$ on adsorption and two bands were observed at $2009.5{\sim}2040.3cm^{-1}$, $1828.4{\sim}1868.7cm^{-1}$ on vacumn desorption. These absorption bands correspond with those of the previous reports approximately. For Ru/Ni(9/1, 8/2, 7/3, 6/4, 5/5; mole content ratio)-$SiO_{2}$ samples, three bands were observed at $2001.8{\sim}2057.7cm^{-1}$, $1812.8{\sim}1926.5cm^{-1}$, $1623.8{\sim}1625.7cm^{-1}$ on adsorption and three bands were observed at $2140.6cm^{-1}$, $2073.1cm^{-1}$, $1969.0{\sim}2057.7cm^{-1}$ on vacumn desorption. The spectrum pattern observed for Ru/Ni-$SiO_{2}$ sample at 9/1 Ru/Ni mole content ratio on CO adsorption and on vacumn desorption is almost like the spectrum pattern observed for Ru-$SiO_{2}$ sample. But the spectrum patterns observed for Ru/Ni-$SiO_{2}$ samples under 8/2 Ru/Ni mole content ratio on CO adsorption and vacumn desorption are almost like the pattern observed for $Ni-SiO_{2}$ sample. It may be suggested surfaces of alloy clusters on the Ru/Ni-$SiO_{2}$ samples contain more Ni components than the mole content ratio of the sample considering the above phenomena. With Ru/Ni-$SiO_{2}$ samples the absorption band shifts may be ascribed to variations of surface concentration, strain variation due to atomic size difference, variation of bonding energy and electronic densities, and changes of surface geometries according to surface concentration variation. Studies for CO adsorption on Ru/Ni alloy cluster surface by LEED and Auger spectroscopy, interation between Ru/Ni alloy cluster and $SiO_{2}$, and MO calculation for the system would be needed to look into the phenomena.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.510-515
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• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.98.1-98.1
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• 2017

본 연구에서는 정전류 조건에서 알루미늄 합금의 PEO(Plasma Electrolytic Oxidation) 피막 형성 거동에 대한 전해질 조성의 영향을 아크 발생 양상, 전압-시간 곡선 및 형성된 표면피막의 구조를 관찰하여 연구하였다. 실험에 사용된 전해질은 NaOH 수용액에 $Na_2SiO_3$을 혼합하여 구성되었으며, NaOH와 $Na_2SiO_3$의 농도는 각각 0.01 ~ 1.0 M 와 0 ~ 2.0 M 사이로 조절되었다. 0.01 M NaOH 이하의 용액에서는 양극전압이 500 V 이상으로 상승되고 미세한 아크가 시편 표면 전체에 발생했으나, 0.02 M NaOH 이상의 농도에서는 양극전압이 300 V 이하로 감소되었고 아크발생이 관찰되지 않았다. 아크발생이 일어나지 않는 고농도의 0.5 M NaOH 용액의 경우 0.1 M 이상의 $Na_2SiO_3$를 첨가하였을 때 작은 아크의 무리가 발생되었다. 0.5 M NaOH 수용액에 0.1 M ~ 0.2 M $Na_2SiO_3$가 첨가되었을 땐 아크 무리가 발생하나 이내 일부 영역에서만 반복적으로 아크가 발생하는 로컬 버닝 현상이 일어났다. 한편 0.5 M NaOH 수용액에 0.5 M 이상의 $Na_2SiO_3$가 첨가되었을 때는 로컬 버닝이 일어나지 않고 전 표면에 걸쳐서 아크 무리가 이동하며 PEO 피막이 형성되었다. 0.01 M NaOH 수용액에서 형성된 PEO 피막의 두께는 처리 시간에 따라 증가하지 않고 $10{\mu}m$ 이하의 낮은 값을 보였다. 반면에 NaOH와 $Na_2SiO_3$ 혼합수용액에서 형성된 피막의 두께는 약 $30{\mu}m$ 이상의 높은 값을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.120-121
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• 2007

Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.

• Applied Chemistry for Engineering
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• v.3 no.4
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• pp.649-656
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• 1992

The synthesis of epichlorohydrin was carried out by the epoxidation of allyl chloride with tert-butyl hydroperoxide(TBHP) over silica supported molybdenum catalyst. Kinetic study was performed at $60-80^{\circ}C$ and 10 atm with the molar ratio of TBHP/Allyl chloride between 0.01 and 0.1 in a batch reactor. The epoxidation of allyl chloride was inhibited by tert-butyl alcohol and kinetic data could be represented by Michaelis-Meten type rate equation. The reaction mechanism could be explained by the combination of reversible adsorption of TBHP and tert-butyl alcohol accompanied by reaction of allyl chloride with TBHP adsorbed on $Mo/SiO_2$ catalyst.

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.672-677
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• 2005

In this study we prepared the Sr-ferrite powders and magnet by a molten salt method using the (NaCl+KCl) salt mixture. Starting materials of $Fe_{2}$$O_{3}$ and Sr$Co_{3}$ were mixed as the molar ratio of 5.70:1, and 0.08 mol$ \% $ $Al_{2}$$O_{3}$, 0.10 mo1$ \% $ Si$O_{2}$ and 0.12 mo1$ \% $ CaO were added as additives. Sr-ferrite powders synthesized at the reaction temperatures of 800$\∼$1200$ ^{\circ}C $ showed the typical M-type hexagonal ferrite phase, and hexagonal plate-like morphology with uniform distribution of 1$\∼$3 $\mu$m particle size. The bulk density of the sintered Sr-ferrite magnet prepared with powders by the molten salt method showed the maximum density of 4.82 g/$cm^{3}$ at the sintering temperature of 1200$^{\circ}C $. The maxima of remanent flux density (Br, 45 emu/g) and coercive force (iHc, 3.75 kOe) occurred at the sintering temperatures of 1150$ ^{\circ}C$ and 1200$^{\circ}C $.

• Nuclear Engineering and Technology
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• v.56 no.3
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• pp.812-818
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• 2024

The volume and toxicity of radioactive waste can be decreased by separating the components of high-level liquid waste according to their properties. An impregnated silica-based adsorbent was prepared in this study by combining N,N,N',N',N",N"-hexa-n-octylnitrilotriacetamide (HONTA) extractant, N',N'-di-n-hexyl-thiodiglycolamide (Crea) extractant, and macroporous silica polymer composite particles (SiO₂-P). The performance of platinum-group metals adsorption and separation on prepared (HONTA + Crea)/SiO₂-P adsorbent was then assessed together with that of co-existing metal ions by batch-adsorption and chromatographic separation studies. From the batch-adsorption experiment results, (HONTA + Crea)/SiO₂-P adsorbent showed high adsorption performance of Pd(II) owing to an affinity between Pd(II) and Crea extractant based on the Hard and Soft Acids and Bases theory. Additionally, significant adsorption performance was observed toward Zr(IV) and Mo(VI). Compared with studies using the Crea extractant, the high adsorption performance of Zr(IV) and Mo(VI) is attributed to the HONTA extractant. As revealed from the chromatographic experiment results, most of Pd(II) was recovered from the feed solution using 0.2 M thiourea in 0.1 M HNO₃. Additionally, the possibility of recovery of Zr(IV), Mo(VI), and Re(VII) was observed using the (HONTA + Crea)/SiO₂-P adsorbent.