• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.17.1-17.1
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• 2006

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• 한국결정성장학회지
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• 제7권4호
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• pp.648-657
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• 1997

합성원료로써 $Mg_3(PO_4)_2$와 $MgF_2$분말을 혼합한 후 백금밀폐용기를 사용하여 $1040^{\circ}C$에서 단일상의 wagnerite$(Mg_2PO_4F)$를 합성하였으며 이 결정상의 동질이상에 대하여 연구한 결과, 이미 발표된 연구 결과들과는 달리 $1255^{\circ}C$에서 단 한번의 가역적인 상전이가 관찰되었고, $1340^{\circ}C$에서 용융될 때까지 열분해 현상은 나타나지 않았으며, 이로써 2가 금속이온의 치환에 의해 여러 종류의 고용체를 합성해 낼 경우, 유약 및 플라스틱의 색상발현을 위한 안료로 사용될 수 있는 것으로 밝혀졌다. $Zn_4P_2O_8F_2$와 $Zn_3MgP_2O_8F_2$ wagnerite의 Zn 대신 2가 금속을 치환한 경우, 전반적으로 d값이 줄어들었으며 Co는 자주색, Ni은 금색, Cu는 녹색을 나타내었다. 또한 charge-coupled 치환을 시도한 결과, $A^{1+}A_3^{2+}X^{5+}X^{6+}O_8_F2$의 경우만 wagnerite가 형성되었다.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.214-218
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• 2020

In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2523-2528
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• 2012

Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

• 열처리공학회지
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• 제28권3호
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• pp.126-133
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• 2015

The aim of this study is to investigate the effect of solution treatment on the corrosion behavior of Mg-8%Al-(0-1)%Zn casting alloys in 1M NaCl aqueous solution. After the solution treatment, all alloys showed single ${\alpha}$-(Mg) phase microstructure by dissolution of ${\beta}(Mg_{17}Al_{12})$ phase into the ${\alpha}$-(Mg) matrix. The $H_2$ evolution volume decreased with an increase in Zn content, which indicates that the addition of Zn plays a beneficial role in decreasing corrosion rate of the Mg-Al-Zn alloy in solution-treated state. The microstructural evaluations on the corrosion products and corroded surfaces after the immersion test in 1 M NaCl solution revealed that the incorporation of more $Al_2O_3$ and ZnO into the corrosion product, by which the penetration of $Cl^-$ ions is impeded, are thought to be responsible for the better corrosion resistance in relation with the Zn addition.

• 한국재료학회지
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• 제10권3호
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• pp.223-226
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• 2000

산소 결핍 페라이트 (oxygen deficient ferrites, ODF) $MeFe_2O_{4-\delta}$는 약 $300^{\circ}C$의 낮은 온도에서 $CO_2$를 C와 $O_2$로 분해한다. 본 연구에서는 $(Ni_x,\;Zn_{1-x}Fe_2_4$ 초미세 페라이트 분말을 수열합성법으로 제조하여 $CO_2$ 분해특성을 살펴보았다. 제조된 페라이트는 XRD 분석 결과, 페라이트의 전형적인 스피넬 구조를 보여주고 있으며, ICP-AES, EDS 정량분석에 의하여 초기 혼합 조성비와 거의 동일한 조성비로 합성되었음을 알 수 있었다. 제조된 (Ni, Zn)-ferrites 분말의 BET 비표면적은 약 $110\textrm{mg}^2$/g$ 이상의 큰 값으로 나타났으며, 입자크기는 약 5~10nm로 매우 작았다. 산소결핍 페라이트 $(Ni_x,\;Zn_{1-x})Fe_2O_{4-{$\delta}}$의 $CO_2$ 분해 효율은 조성에 따라 큰 차이를 보이지 않았으며 3원계 (Ni, Zn)-ferrite가 Ni-ferrite보다 더 높았다.

• Journal of Magnetics
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• 제15권4호
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• pp.165-168
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• 2010

$Li_{0.1}Zn_{0.9}O$ and $MgFe_2O_4$ powders were synthesized using chemical methods and mixed in different proportions to prepare a mixture of $Li_{0.1}Zn_{0.9}O$ and $MgFe_2O_4$ that was thermally treated between 900 to $1100^{\circ}C$ for 1 hour. Structural characterization was done using X-ray powder diffraction measurements. Grain sizes and morphologies of $Li_{0.1}Zn_{0.9}O$, $MgFe_2O_4$, and $Li_{0.1}Zn_{0.9}O+MgFe_2O_4$ samples were observed using a scanning electron microscope. Variation of magnetic properties of the $Li_{0.1}Zn_{0.9}O+MgFe_2O_4$ samples due to the addition of $Li_{0.1}Zn_{0.9}O$ was studied in relation to the structural changes occurring due to the thermal treatment. In particular, changes in the cationic distribution between the tetrahedral and octahedral positions were studied with respect to the increase of the annealing temperature. Magnetization was found to be dependent on the cations distributed in the tetrahedral and octahedral sites of the $MgFe_2O_4$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.455-458
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• 2001

Spinel $LiMn_{2-y}$$M_{y}$ $O_4$powder was prepared solid-state method by calcining the mixture of LiOH - $H_2O$, Mn $O_2$, ZnO and MgO at 80$0^{\circ}C$ for 36h. To investigate the effect of substitution with Mg, Zn cation, charge-discharge experiments and initial impedance spectroscopy performed. The structure of $LiMn_{2-y}$$M_{y}$ $O_4$crystallites was analyzed from powder X-ray diffraction data as a cubic spinel, space group Fd3m. all cathode material showed spinel phase based on cubic phase in X-ray diffraction. Ununiform which calculated by (111) face and (222) face was constant in spite of the change of y value, except PUf\ulcorner LiM $n_2$ $O_4$. The discharge capacities of the cathode for the cation subbstitUtes $LiMn_{2-y}$$M_{y}$ $O_4$/Li cell at the 1st cycle and at the 40th cycle were about 120~124 and 108~112mAh/g except LiM $n_{1.9}$Z $n_{0.1}$ $O_4$/Li cell, respectively. This cell capacity is retained by 93% after 40th cycle. AC impedance of $LiMn_{2-y}$$M_{y}$ $O_4$/Li cells revealed the similar resistance of about 65~110$\Omega$ before cycling. before cycling.g.g.