• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.439-442
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• 2004

The effects of sintering additives on the low-temperature sintering and microwave dielectric properties of $Mg_4Nb_2O_9$ dielectric ceramics were studied. When $3{\sim}20wt%$ of $0.242Bi_2O_3-0.758V_2O_5$ was added, the sintering temperature decreased from $1100{\sim}1300^{\circ}C$ to $950^{\circ}C$ and high density was obtained. When $Mg_4Nb_2O_9$ was sintered at $950^{\circ}C$ with 10wt% of sintering additive, the microwave dielectric properties of $Q{\times}f_0\;=\;80.035GHz,\;\epsilon_r\;=\;13.3\;and\;\tau_f\;=\;-12.9\;ppm/^{\circ}C$ were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.300-301
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• 2007

$Mg_4(Nb_{2-x}V_x)O_9$ (MNV) ceramics have been prepared by a hydrothermal method. Low-temperature sintering of $Mg_4(Nb_{2-x}V_x)O_9$ (MNV) by V substitution for Nb was discussed in this study. A $Q{\cdot}f_0$ value of 103,297 GHz with a ${\varepsilon}_r$ of 12.56 and a ${\tau}_f$ of $-10.53\;ppm/^{\circ}C$ was obtained when x=0.0625 after sintering at $1100^{\circ}C$ for 5 h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.281-282
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• 2007

$Mg_4Nb_2O_9$ (MN) ceramics have been prepared by a sol-gel method. The powder characteristics, phase evolution, and microwave dielectric properties of the MN were investigated in various processing conditions such as sol-gel compositions, calcination, and sintering temperatures. A Qxfo value of 111,717 GHz with a ${\varepsilon}_r$ of 10.59 and a ${\tau}_f$ of $+1.736\;ppm/^{\circ}C$ was obtained after sintering at $1300^{\circ}C$ for 5 h.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1420-1421
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• 2006

In this study, structural and micowave dielectric properties of the $Mg_{5}B_{4}O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceeramics. The specimens are prepared through the solid-state route. According to the XRD pattern, $Mg_{4}Ta_{2}O_9$ and $MgTa_{2}O_6$ phase exist in calcined and sintered $Mg_{5}Ta_{4}O_{15}$ powder. Also $Mg_{5}Ta_{4}O_{15}$ phase added with increasing sintering temperature. In the case of calcined and sintered $Mg_{5}Nb_{4}O_{15}$ powder, single phase of $Mg_{5}Nb_{4}O_{15}$ were appeared. The bulk density and quality factor of the $Mg_{5}B_{4}O_{15}$ (B=Ta, Nb) ceramics were increased with sinteming temperature in $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased in another sintering temperature. Dielectric constant of the $Mg_{5}Ta_{4}O_{15}$ ceramics was increased continuously with increasing of sintering temperature. And the dielectric constant of the $Mg_{5}Nb_{4}O_{15}$ ceramics was increased in $1400^{\circ}C{\sim}1450^{\circ}C$ but decreased in $1475^{\circ}C$. In the case of the $Mg_{5}Ta_{4}O_{15}$ and $Mg_{5}Nb_{4}O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, -10.91 $ppm/^{\circ}C$ and 14, 37,350 GHz, -52.3 $ppm/^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.281-288
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• 1997

The effects of 0 to 6 mol% excess 91PbO-9WO3 addition on the microstructure and the dielectric pro-perties in 40Pb(Mg1/3Nb2/3)O3-30PbTiO3-30Pb(Mg1/2W1/2)O3 ternary system were investigated. Excess 91PbO-9WO3 addition enhanced densification at relatively lower temperature due to the formation of liquid phase. The dielectric constant of the specimen with standard composition was 16,400 and that of specimen with 1 mol% excess additive was the maximum of 18,500. And more than 2 mol% excess addition decreased dielec-tric constant. Specimens with 2~4 mol% 91PbO-9WO3 addition showed dual peak maxima in the tem-perature dependence of dielectric constant. In the specimens which have more than 5 mol% excess addition a new phase with W-rich composition was formed at grain boundary.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.498-501
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• 2001

The effects of MnO$_2$ addition on the piezoelectric properties in 0.9Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.1Pb$TiO_3$ relaxor ferroelectrics were studied in the ferroelectricity-dominated temperature range from -4$0^{\circ}C$ to 3$0^{\circ}C$. Dielectric, piezoelectric properties and electric-field- induced strain were examined to clarify the effect of MnO$_2$ addition. As the added amount of MnO$_2$ increase. dielectric and piezoelectric properties of Pb(Mg$_{1/3}$ Nb$_{2/3}$O$_3$ became harder. From the experimental results, it was suggested that Mn behaves as a ferroelectric domain pinning element.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.447-453
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• 1999

Congruent $LiNbO_3$ crystals with doped Mg and codoped with Mn or Fe were grown by the Czochralski method. It is known that the physical properties of $LiNbO_3$ depend strongly on the addition of Mg and transition metals. This is established by studying the following properties; XRD patterns, the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$ vibration and lines of the ESR of $Fe^{3+},\; Mn^{2+}$. The position of the UV absorption edge and the shape and peak point of the absorption band of the $OH^-$ vibrational band changed monotonously up to a critical concentration of $Mg^{2+}$ ions. The mechanism of the incorporation of Mg ions changes at this concentration. The transition temperature was estimated by measuring the dielectric temperature behavior up to $1230^{\circ}C$ in a frequency range of 100Hz to 10MHz. EPR of $Mn^{2+}\;and\; Fe^{3+}$ ions were employed to investigated the Mg doping effects in the $LiNbO_3$ crystal. The increase of linewidths and the asymmetry of signals were observed in all crystals. New signals of $Fe^{3+}$ arising from the new centers were observed I the heavily Mg-doped crystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.476-479
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• 2001

The microwave dielectric properties of $[(Pb_{1-x}Ba_{x})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ ceramics were investigated. When $[(Pb_{0.9}Ba_{0.1})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ ceramics were sintered at $1250^{\circ}C$ and $1350^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon_{r}=64\sim80$, $Q{\times}f=11,800\sim18,000$. As a result, $[(Pb_{0.9}Ba_{0.1})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ having $\varepsilon_{r}=80$, $Q{\times}f=11,800$ (at 4 GHz) was developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.476-479
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• 2001

The microwave dielectric properties of [(Pb$_{1-x}$ Ba$_{x}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ ceramics were investigated. When [(Pb$_{0.9}$Ba$_{0.1}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ ceramics were sintered at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$$_{r}$=64~80, Qxf=11,800~18,000. As a result, [(Pb$_{0.9}$Ba$_{0.1}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ having $\varepsilon$$_{r}$=80, Qxf=11,800 (at 4 GHz) was developed.ed.eveloped.ed.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.652-659
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• 1996

Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.