• Title/Summary/Keyword: $MgB_2$ films

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Bi2Sr2CaCu2O8+d Thin Films Grown on (100) MgO Substrate by Metallorganic Decomposition Method (MOD 방법을 이용한 Bi2Sr2CaCu2O8+d 박막제작)

  • ;;;;Takayuki Ishibashi;Katsuaki Sato
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.11
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    • pp.1035-1040
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    • 2003

  • High $T_{c}$ superconducting B $i_2$S $r_2$CaC $u_2$ $O_{8+d}$ (BSCCO2212) films were prepared by a metallorganic decomposition (MOD) method. The metal organic solution of BSCCO2212 was spin-coated on MgO (100) substrates at 3000 rpm for 1 min. To achieve a high critical current density, we controlled heat-treatment conditions and atmosphere. The films were annealed at temperature 75$0^{\circ}C$ ∼ 80$0^{\circ}C$ in $O_2$ or air. We obtained c-axis orientated BSCCO thin films on MgO substrates. The annealed sample at 77$0^{\circ}C$ with $O_2$ showed the critical temperature about 77 K and critical current denstity of 1.19 ${\times}$ 10$^{5}$ A/$\textrm{cm}^2$ about 13 K.

  • https://doi.org/10.4313/JKEM.2003.16.11.1035 인용 PDF KSCI

Study on dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_{3}$thin films for high-frequency passive device (고주파 수동소자 유전체용 $Ba_{0.5}Sr_{0.5}TiO_{3}$ 박막의 유전특성에 관한 연구)

  • 이태일;최명률;박인철;김홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.263-266
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    • 2001

  • In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

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Effect of ${B_2}{O_3}$on the Adhesion Properties of Electrophoretically Deposited Phosphor Films (${B_2}{O_3}$가 전기영동법으로 제조된 형광막의 접착력에 미치는 영향)

  • 오승목;이현덕;강태식;김강진;변재동
    • Journal of the Korean Ceramic Society
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    • v.37 no.9
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    • pp.927-932
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    • 2000

  • Mg(NO$_3$)$_2$가 용해된 IPA 용액에서 형광 분말의 전기영동법에 의한 증착 과정을 증착 시간, Mg(NO$_3$)$_2$의 농도 및 열처리 조건에 따라 분석하였다. 전기영동법으로 가장 두께가 균일한 형광막을 얻기 위한 Mg(NO$_3$)$_2$의 최적 농도는 $10^{-3}$~$10^{-4}$ M였다. 형광체의 접착력을 향상시키기 위해 새로운 방법을 고안하였다. 즉 전기영동법으로 증착된 형광막에 B$_2$O$_3$가 용해된 IPA 용액을 분사한 후 열처리를 하였다. 그 결과 기존의 PL 특성을 그대로 유지하면서 접착력을 향상시킬 수 있었다. 그러나 CL 휘도는 약간 감소하였다.

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Growth and magnetic properties of Tb, Eu, EuTb-substituted garnet single crystal films (Tb, Eu, EuTb가 치환된 가네트 단결정 막의 성장과 자기적 특성)

  • Kim G. Y;Yoon S. G.;Chung I. S;Park S. B;Yoon D. H
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.5
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    • pp.193-198
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    • 2004

  • Using the $PbO-B_2O_3-Bi_2O_3$ flux system, $(TbBi)_3(FeAIGa)_5O_{12}(TbIG)$, $(EuBi)_3(FeAIGa)_5O_{12}(EuIG)$ and $(EuTbBi)_3(FeAIGa)_5O_{12}(EuTbIG)$ films were grown on $(GdCa)_3(GaMgZr)_5O_{12}(SGGG)$ substrates by the liquid phase epitaxy (LPE). The saturation magnetization of the grown TbIG, EuIG and EuTbIG films was about 150, 950 and 125 Oe, respectively. The TbIG films resulted in the single magnetic domain while the EuIG and EuTbIG films were observed to be the multi magnetic domains by magnetic force microscope (MFM).

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