• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.93-98
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• 2014

The $Cr_2AlC$ carbides oxidized at 700, 850 and $1000^{\circ}C$ in air from 70 hours up to 360 days. They oxidized according to the reaction; $Cr_2AlC+O_2{\rightarrow}{\alpha}-Al_2O_3+CO(g)$. The scales consisted primarily of the thin, essentially pure $Al_2O_3$ layer and the underlying Al-dissolved $Cr_7C_3$ layer. They grew via the outward diffusion of Al and carbon, and the inward diffusion of oxygen. The oxidation resistance of $Cr_2AlC$ was excellent due to the formation of the protective $Al_2O_3$ layer. Even when $Cr_2AlC$ oxidized at $1000^{\circ}C$ for 360 days, the ${\alpha}-Al_2O_3$ layer was only about 4 ${\mu}m$-thick.

• Journal of Powder Materials
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• v.21 no.6
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• pp.434-440
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• 2014

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Journal of IKEEE
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• v.18 no.2
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• pp.214-219
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• 2014

In this paper, the usage of tilt-implanted trench Schottky diode(TITSD) based on silicon carbide is proposed. A tilt-implanted trench termination technique modified for SiC is proposed as a method to keep all the potentials confined in the trench insulator when reverse blocking mode is operated. With the side wall doping concentration of $1{\times}10^{19}cm^{-3}$ nitrogen, the termination area of the TITSD is reduced without any sacrifice in breakdown voltage while potential is confined within insulator. When the trench depth is set to 11um and the width is optimized, a breakdown voltage of 2750V is obtained and termination area is 38.7% smaller than that of other devices which use guard rings for the same breakdown voltage. A Sentaurus device simulator is used to analyze the characteristics of the TITSD. The performance of the TITSD is compared to the conventional trench Schottky diode.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.549-555
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• 2012

Silicon carbide(SiC) exhibits many unique properties, such as high strength, corrosion resistance, and high temperature stability. In this study, a SiC-fiber web was prepared from polycarbosilane(PCS) solution by employing the electrospinning process. Then, the SiC-fiber web was pyrolyzed at $1800^{\circ}C$ in argon atmosphere after it was subjected to a thermal curing. The SiC-fiber web (ground web)/phenolic resin (resol) composite was fabricated by hot pressing after mixing the SiC-fiber web and the phenolic resin. The SiC-fiber web composition was controlled by changing the fraction of filler (filler/binder = 9:1, 8:2, 7:3, 6:4, 5:5). Thermal conductivity measurement indicates that at the filler content of 60%, the thermal conductivity was highest, at 6.6 W/mK, due to the resulting structure formed by the filler and binder being closed-packed. Finally, the microstructure of the composites of SiC-fiber web/resin was investigated by FE-SEM, EDS, and XRD.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1474-1480
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• 2013

Silicon carbide (SiC)-zirconium diboride ($ZrB_2$) composites were prepared by subjecting a 60:40 vol% mixture of ${\beta}$-SiC powder and $ZrB_2$ matrix to spark plasma sintering (SPS) in 15 $mm{\Phi}$ and 20 $mm{\Phi}$ molds. The 15 $mm{\Phi}$ and 20 $mm{\Phi}$ compacts were sintered for 60 sec at $1500^{\circ}C$ under a uniaxial pressure of 50 MPa and argon atmosphere. Similar composites were simulated using $Flux^{(R)}$ 3D computer simulation software. The current and power densities of the specimen sections of the simulated SiC-$ZrB_2$ composites were higher than those of the mold sections of the 15 $mm{\Phi}$ and 20 $mm{\Phi}$ mold simulated specimens. Toward the centers of the specimen sections, the current densities in the simulated SiC-$ZrB_2$ composites increased. The power density patterns of the specimen sections of the simulated SiC-$ZrB_2$ composites were nearly identical to their current density patterns. The current densities of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composites were higher than those of the 20 $mm{\Phi}$ mold in the center of the specimen section. The volume electrical resistivity of the simulated SiC-$ZrB_2$ composite was about 7.72 times lower than those of the graphite mold and the punch section. The power density, 1.4604 $GW/m^3$, of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composite was higher than that of the 20 $mm{\Phi}$ mold, 1.3832 $GW/m^3$. The $ZrB_2$ distributions in the 20 $mm{\Phi}$ mold in the sintered SiC-$ZrB_2$ composites were more uniform than those of the 15 $mm{\Phi}$ mold on the basis of energy-dispersive spectroscopy (EDS) mapping. The volume electrical resistivity of the 20 $mm{\Phi}$ mold of the sintered SiC-$ZrB_2$ composite, $6.17{\times}10^{-4}{\Omega}cm$, was lower than that of the 15 $mm{\Phi}$ mold, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$, at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.67-68
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• 2008

In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

• Composites Research
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• v.31 no.2
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• pp.43-50
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• 2018

The effects of deposition temperature on chemical vapor deposited silicon carbide (CVD-SiC) were studied to obtain high deposition rates and excellent bending strength characteristics. Silicon carbide prepared at $1250{\sim}1400^{\circ}C$ using methyltrichlorosilane(MTS : $CH_3SiCl_3$) by hot-wall CVD showed deposition rates of $95.7{\sim}117.2{\mu}m/hr$. The rate-limiting reaction showed the surface reaction at less than $1300^{\circ}C$, and the mass transfer dominant region at higher temperature. The activation energies calculated by Arrhenius plot were 11.26 kcal/mole and 4.47 kcal/mole, respectively. The surface morphology by the deposition temperature changed from $1250^{\circ}C$ pebble to $1300^{\circ}C$ facet structure and multi-facet structure at above $1350^{\circ}C$. The cross sectional microstructures were columnar at below $1300^{\circ}C$ and isometric at above $1350^{\circ}C$. The crystal phases were all identified as ${\beta}$-SiC, but (220) peak was observed from $1300^{\circ}C$ or higher at $1250^{\circ}C$ (111) and completely changed to (220) at $1400^{\circ}C$. The bending strength showed the maximum value at $1350^{\circ}C$ as densification increased at high temperatures and the microstructure changed from columnar to isometric. On the other hand, at $1400^{\circ}C$, the increasing of grain size and the direction of crystal growth were completely changed from (111) to (220), which is the closest packing face, so the bending strength value seems to have decreased.

• Journal of the Korean institute of surface engineering
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• v.17 no.1
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• pp.7-13
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• 1984

Carburizing of a 12%Cr steel containing 0.6%Si was performed at 950$^{\circ}C$ for various times, and the microstructure, hardness and the water characteristics of the carburized chromium steel were examined. The results obtained in this study are as follows: 1. Carbide-dispersed layer (CD layer) with fine dispersion of $Cr_7C_3$ in martensite matrix was formed by carburizing. The radius and amount of the carbides in the surface region of CD layer were about 0.3${\mu}m$ and 35% by volume, respectively. 2. Chromium steel carburized and quench-tempered showed better wear resistance and hardness than ordinary high chromium tool steel. It is concluded from these results that fine dispered carbides are very effective in improving wear resistance and hardness.

• Korean Journal of Metals and Materials
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• v.47 no.7
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• pp.406-415
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• 2009

A study was conducted on the effects of carbon, tungsten, and vanadium on the wear properties and surface roughness of four High Speed Steel (HSS) rolls manufactured by the centrifugal casting method. Hot-rolling simulation tests were carried out using a high-temperature wear tester capable of controlling speed, load, and temperature. HSS rolls contained a large amount (up to 25 vol.%) of carbides such as MC, $M_{2}C$, $M_{7}C_{3}$, and $M_{6}C$ carbides formed in the tempered martensite matrix. The matrix consisted mainly of lath tempered martensite when the carbon content in the matrix was small, and contained a considerable amount of plate tempered martensite when the carbon content increased. The high-temperature wear test results indicated that the wear properties and surface roughness of the rolls improved when the amount of hard MC carbides formed inside solidification cells increased. The rolls distribution was also homogeneous. The best wear properties and surface roughness were obtained from a roll where a large amount of MC carbides was homogeneously distributed in the lath tempered martensite matrix. The proper contents of carbon equivalent, tungsten equivalent, and vanadium were 2.0~2.3%, 9~10%, and 5~6%, respectively.