• Title/Summary/Keyword: $La_3Ga_5SiO_{14}$

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GROWTH AND CHARACTERIZATIONS OF $La_3Ga_5SiO_{14}$ SINGLE CRYSTALS AND SINTERED BODY FOR THE APPLICATIONS OF FILER AND RESONATOR

  • Jung, Il-Hyoung;Kyung Joo;Shim, Kwang-Bo;Auh, Keun-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.09a
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    • pp.73-77
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    • 1998
  • Langasite(La3Ga5SiO14) is a new piezoelectric material which is similar to quartz, LN(LiNbO3) and LT(LiTaO3) in its acoustic behavior. In this study, pure Langasite and Langasite family groups were synthesized by the solid state reactions in air. For the synthesis process, diffusion species were investigated and sintered body of synthesized powders were studied on dielectric property according to surface microstructures.

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Growth of $La_{3}Ga_{5}SiO_{14}$ single crystals by the floating zone method

  • Won Ki Yoon;Jong Cheol Kim;Keun Ho Auh
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.6
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    • pp.547-552
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    • 1999
  • Langasite$(La_{3}Ga_{5}SiO_{14})$ single crystal was successfully grown by Floating Zone (FZ) method and characterized. The growth rate was 1.5 mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. The grown crystal was 12 mm in length and 6 mm in diameter. The grown crystal was dark orange color and it was grown along [001] direction. The composition of grown crystal and the structure were analyzed using XRD and WDS. The electrical properties of grown crystal at various frequencies and temperatures were discussed.

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A promising new piezoelectric material -Langasite and its related compounds-

  • Kawanaka, Hiroyuki;Takeda, Hiroaki;Shimamura, Kiyoshi;Onozato, Norio;Fukuda, Tsuguo
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1997.06a
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    • pp.145-145
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    • 1997
  • Recent progress of electric technology requires new piezoelectric crystals having superior properties such as zero temperature coefficients and large electromechanical coupling factors. We have developed a series of new leading chandidates, La$_3$Ga5SiO14(langasite, LGS), La3Nb0.5Ga5.5O14(LNG), La3Ta0.5O14(LTG), to satisfy those requirements. High quality LGS, LNG and LTG single crystals, with dimensions of 2 inches in diameter, were successfully grown by the Czochralski method at a pulling rate of 1mm/h. Since no variation of chemical composition was observed when whole melt in a crucible was crystallized, congruency of these compositions was confirmed. Physical constants such as elastic constants, dielectric constants and piezoelectric constants were measured. Filters and oscillators made of grown LGS, LNG and LTG single crystals showed superior properties such as three times wider passband than that of quartz, low insertion loss and easy processing, Langasite family crystals were shown to be superior materials to other known materials such as quartz, LiTaO$_3$, $\alpha$-AlPO$_4$ and Li$_2$B$_4$O7.

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Crystal growth of langasite by floating zone method and characterization (bloating zone법을 이용한 Langasite 단결정 성장 및 특성 분석)

  • 김영석;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.2
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    • pp.63-67
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    • 2002
  • Langasite single crystal was grown by Xenon-arc floating zone method in mixutre of Af and $O_2$ gas atmosphere. Growing and rotation speed were 1.5 much and 15 rPm respectively. The grown crystal had a c-axis and color of orange. Composition of the grown crystal was $La_{3.10}Ga_{4.73}Si_{1.17}O_{14}$. Activation energy of the crystal was 0.23 eV and was PTC characteristics.

Synthesis and characterization of powders in the La-Al-Si-O system

  • Kyoung Jin Kim;Kwang Suk Joo;Kun Chul Shin;Keun Ho Auh;Kyo Seon Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.5
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    • pp.475-479
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    • 1999
  • Langasite ($La_{3}Ga_{5}SiO_{14}$) was found to have wide application as a promising piezoelectric material. It has high thermal stability of the frequency and large electromechanical coupling factor. For the further development of new compounds with langasite type structure, powders in the La-Al-Si-O system were synthesized by a modified Pechini process. The evolution of the crystalline phase during calcination was studied using TG-DTA, XRD and TEM for the precursor powders. Decomposition proceeded via dehydration and removal of excess solvents at low temperatures ($T<500^{\circ}C$), followed by the crystallization of lanthanum aluminum silicate ($T>800^{\circ}C$) and phase transformation to $LaAlO_{3}$ phase ($T>1200^{\circ}C$). Transmission electron microscopy (TEM) of the calcined powders showed diffuse hollow rings corresponding to an amorphous phase at $800^{\circ}C$ and clear diffraction patterns corresponding to a crystalline phase from the P321 space group ($T<1200^{\circ}C$) and the R3m ($T<1200^{\circ}C$).

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Synthesis of Langasite Powder by a Chemical Route

  • Kim, Kyoung-Jin;Kim, Jung-Hwan;Kim, Young-Do;Joo, Kwang-Suk;Shin, Kun-Chul;Auh, Keun-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.06a
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    • pp.105-109
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    • 1998
  • Langasite({{{{ { La}_{ 3} {Ga }_{5 } {SiO }_{14 } , LGS}}}}) powder was prepared by a polymerized complex method based on the Pechini-type reaction. A mixed solution of ethylene glycol(EG), cotric acid(CA), lanthanum, gallium and silicon ions, with a molar ratio of EG:CA:La:Ga:Si=100:25:3:5:1, was polymerzed to from a transparent resin, which was used as a precursor for the synthesis of LGS. X-ray diffraction(XRD) patterns indicated that the LGS phase could be formed by the heat-treatment in air at 1000$^{\circ}C$ for 3hrs

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On the growth and properties of GaP single crystals (GaP단결정의 성장과 특성에 관하여)

  • 김선태;문동찬
    • Electrical & Electronic Materials
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    • v.5 no.3
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    • pp.284-294
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    • 1992
  • 합성용질확산법으로 GaP단결정을 성장시키고 몇가지 성질을 조사하였다. 정지상태에서 결정의 성장속도는 1.75[mm/day]이었고 결정성장용 석영관을 전기로내에서 하강시키므로써 양질의 GaP 단결정을 성장하였다. 에치피트밀도는 결정의 성장축 방향으로 3.8*$10^{4}$[$cm^{-2}$]부터 2.3*$10^{5}$[$cm^{-2}$] 까지 증가하였다. 성장된 GaP결정의 이동도와 캐리어농도는 실온에서 197.49[$cm^{2}$/V.sec]와 6.75*$10^{15}$[$cm^{-3}$]이었고 77K의 온도에서는 266.91[$cm^{2}$ /V.sec]와 3.13*$10^{14}$[$cm^{-3}$]이었다. 에너지갭의 온도의존성은 실험적으로 $E_{g}$(T)=2.3383-(6.082*$10^{-4}$) $T^{2}$/(373.096+T)[eV]로 구하여졌다. 저온에서 측정된 광루미네센스 스펙트럼은 구속된 여기자의 복사재결합과 재결합 과정에 포논의 참여로 인하여 에너지갭 부근의 복잡한 선 스펙트럼이 나타났고 얕은 준위의 Si도너와 Zn억셉터준위 사이에서의 복사재결합 및 이에 대한 1LO, 2LO의 포논복제가 나타났으며 S $i_{Ga}$ -S $i_{p}$의 쌍방출에 의하여 1.8932[eV]에서 넓은 반치전폭의 피크가 나타났다. GaP의 적외선 흡수는 TO, LO, LA, T $A_{1}$, T $A_{2}$ 포논들의 이중결합모드와 G $a_{2}$O의 진동모드 및 Si도너와 Zn억셉터들에 의하여 일어났다. Zn를 확산시키어 제작한 p-n GaP발광다이오드는 실온에서의 발광중심피크가 6250[.angs.]이었고 최대광출력은 0.0916[mW], 양자효율은 0.51%이었다.이었다.

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Characterization of Langasite $(La_3Ga_5SiO_{14}$ systems sintered body

  • Jung, Il-Hyiung;Kyoung Joo;Shin, Kwang-Bo;Auh, Keun-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.06a
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    • pp.121-125
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    • 1998
  • Langasite is a new piezoelectric material which is similar to quartz in its acoustic behaviours. In this study, pure Langasite and Langasite family grouo powders were synthesized by the solid state reaction in air. And then diffusion of synthesized powders were controlled by B and C ions in the{{{{ { A}_{ 3} { B}_{5} { CD}_{ 14 }}}}} structure. Dielectric constant and lattice anisotripy of Langasite and family group were measured to be 17, 22~27 in the range of 1 kHz to 13 MHz and about 1.6. respectively.

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