• 대한수학회지
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• 제34권4호
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• pp.859-869
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• 1997

It is shown that for $A_{k, m}$ a k-homogeneous $C^*$-algebra over $S^{2n - 1} \times S^1$ such that no non-trivial matrix algebra can be factored out of $A_{k, m}$ and $A_{k, m} \otimes M_l(C)$ has a non-trivial bundle structure for any positive integer l, we construct an $A_{k, m^-} C(S^{2n - 1} \times S^1) \otimes M_k(C)$-equivalence bimodule to show that every k-homogeneous $C^*$-algebra over $S^{2n - 1} \times S^1)$. Moreover, we prove that the tensor product of the k-homogeneous $C^*$-algebra $A_{k, m}$ with a UHF-algebra of type $p^\infty$ has the tribial bundle structure if and only if the set of prime factors of k is a subset of the set of prime factors of pp.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.48-49
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• 2007

본 논문에서는 전력계통운영과 전력시장운영시스템과의 연계 기능을 포함한 한국형 통합 에너지관리시스템(K-EMS)용 발전계획 응용프로그램 중에서 경제급전(Economic Dispatch) 프로그램 개발에 대해 소개한다. K-EMS 개발은 기술적 난이도에 따라 3단계로 구분되며 경제급전은 그 중 1단계에 포함되는 내용으로 이 후 안전도제약 경제급전 (SCED: Security Constrained Economic Dispatch)로 발전될 예정이다.

• 대한방사선협회지
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• 제25권1호
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• pp.311-316
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• 1999

• Journal of applied mathematics & informatics
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• 제30권3_4호
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• pp.455-462
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• 2012

The cyclic group $Cn={\langle}(12{\cdots}n){\rangle}$ acts on the set ($^{[n]}_k$) of all $k$-subsets of [$n$]. In this action of $C_n$ the number of orbits of size $d$, for $d|n$, is $$O^{n,k}_d=\frac{1}{d}\sum_{\frac{n}{d}|s|n}{\mu}(\frac{ds}{n})(^{n/s}_{k/s})$$. Stanton and White[7] generalized the above identity to construct the orbit polynomials $$O^{n,k}_d(q)=\frac{1}{[d]_{q^{n/d}}}\sum_{\frac{n}{d}|s|n}{\mu}(\frac{ds}{n})[^{n/s}_{k/s}]{_q}^s$$ and conjectured that $O^{n,k}_d(q)$ have non-negative coefficients. In this paper we give a combinatorial proof for the positivity of coefficients of the orbit polynomial $O^{n,3}_d(q)$.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2006년도 제33회 추계학술대회 발표논문집
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• pp.78-78
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• 2006

• Korean Journal of Mathematics
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• 제25권3호
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• pp.349-358
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• 2017

The cyclic group $C_n={\langle}(12{\cdots}n){\rangle}$ acts on the set $(^{[n]}_k)$ of all k-subsets of [n]. In this action of $C_n$ the number of orbits of size d, for d | n, is $$O^{n,k}_d={\frac{1}{d}}{\sum\limits_{{\frac{n}{d}}{\mid}s{\mid}n}}{\mu}({\frac{ds}{n}})(^{n/s}_{k/s})$$. Stanton and White [6] generalized the above identity to construct the orbit polynomials $$O^{n,k}_d(q)={\frac{1}{[d]_{q^{n/d}}}}{\sum\limits_{{\frac{n}{d}}{\mid}s{\mid}n}}{\mu}({\frac{ds}{n}})[^{n/s}_{k/s}]_{q^s}$$ and conjectured that $O^{n,k}_d(q)$ have non-negative coefficients. In this paper we give a constructive proof for the positivity of coefficients of the orbit polynomial $O^{n,2}_d(q)$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.638-639
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• 2007

본 논문에서는 EMTP-RV를 이용하여 선로가압 시 발생하는 개폐서지에 대해 분석하였다. 신안산S/S$\sim$남안산S/S의 154kV 지중케이블 2회선 실계통 선로 모델을 구성하여 부하단의 크기 변화에 따른 조건으로 시뮬레이션 하였으며 그 결과를 분석하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.106.1-106.1
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• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• BMB Reports
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• 제44권5호
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• pp.323-328
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• 2011

We screened four B. thuringiensis strains whose parasporal inclusions contained the S-layer protein (SLP), and cloned two slp genes from each strain. Phylogenetic analysis indicated these SLPs could be divided into two groups, SLP1s and SLP2s. To confirm whether SLPs were present in the S-layer or as a parasporal inclusion, strains CTC and BMB1152 were chosen for further study. Western blots with isolated S-layer proteins from strains CTC and BMB1152 in the vegetative phase showed that SLP1s and SLP2s were constituents of the S-layer. Immunofluorescence utilizing spore-inclusion mixtures of strains CTC and BMB1152 in the sporulation phase showed that SLP1s and SLP2s were also constituents of parasporal inclusions. When heterogeneously expressed in the crystal negative strain BMB171, four SLPs from strains CTC and BMB1152 could also form parasporal inclusions. This temporal and spatial expression is not an occasional phenomenon but ubiquitous in B. thuringiensis strains.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 학술대회 논문집 전문대학교육위원
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.