• Title/Summary/Keyword: $KNbO_3$

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The growth and characterization of Rb-doped $KNbO_3$ nonlinear optical crystals

  • Beh, C.Y.;Chong, T.C.;Kumagai, H.;Hirano, M.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1997.06a
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    • pp.149-155
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    • 1997
  • We have successfully grown colorless and transparent Rb-doped potassium niobate (KRN) single crystals using the top seeded solution growth(TSSG) technique. In our crystal growth experiments, the Rb doping concentrations within the melt range from 2-15 mol% relative to that of Nb$_2$O5. Atomic absorption measurements indicate that the Rb content in the KRN solid solution is rather low; the Rb segregation coefficient is found to be on the order of 0.05. It is believed that this is due to the relatively much larger Rb+ ionic radius compared to that of K+, rendering it more difficult for Rb to replace K in the KNbO$_3$(KN) host lattice. Preliminary single-pass second harmonic generation (SHG) experimental results indicate that there exists marginal improvement in the phase-matching temperature tolerance of KRN compared to that of pure Kn single crystals.

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Growth of lead-based functional crystals by the vertical bridgman method

  • Xu Jiayue
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.1
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    • pp.1-7
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    • 2006
  • Some lead-based crystals show excellent ferroelectric, piezoelectric or scintillation properties and have attracted much attention in recent years. However, the erosion of the high temperature solution on platinum crucible and the evaporation of PbO component are the main problems often encountered during the crystal growth. In this paper, we reported recent progress on the Bridgman growth of lead-based functional crystals, such as novel relaxor ferroelectric crystals (PZNT and PMNT), scintillation crystals $(PbWO_4,\;PbF_2\;and\;PbClF)$ and piezoelectric crystals $(Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}),$ in Shanghai Institute of Ceramics, Chinese Academy of Sciences. The vertical Bridgman method has been modified to grow PZNT crystals from high temperature solution and as-grown crystals have been characterized. Large size lead-based scintillators, $PbWO_4\;and\;PbF_2$ crystals, have been mass-produced by the vertical Bridgman method in the multi-crucible fumace. These crystals have been supplied to CERN and other laboratories for high-energy physics experiments. The Bridgman growth of piezoelectric crystals $Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}$ are discussed also.

Crystal Growth and their photorefractive properties for optical memo (광메모리 단결정의 성장과 그 특성)

  • 유영문
    • Broadcasting and Media Magazine
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    • v.6 no.1
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    • pp.78-87
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    • 2001
  • Seven kinds of most representative photorefractive crystals expected to contribute to the realization of the volume holographic storage were reviewed The growth conditions and problems for highly homogeneous optical qualities of the following crystals depending on the growth methods were discussed;(1) $LiNbO_3$ and $Bi_2SiO_{20}$ by Czochralski method (2) $Bi_{12}TiO_{20}$, $KNbO_3$ and $BaTiO_3$ by top seeded solution growth and (3) $(Sr_{1-x}Ba_{x})Nb_{2}O_{6}$ and $(K_{1-y}Na_y)_{2A-2}(Sr_{1-x}Ba_x)_{2-A}Nb_2O_6$ by Stepanov method, And then the figure of merits for the estimation of phororefractive materials on performances, such as $Q_1$, $Q_2$ and sensitivity, were discussed.

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Piezoelectric Properties and phase transition of $KNbO_3$ Ceramics with B-site substitution ((K,Na)$NbO_3$세라믹스에서 B-site의 Sb 치환에 따른 압전 특성 및 상전이 거동)

  • Lee, Moon-Seok;Lee, Yong-Hyun;Bang, Je-Myong;Suk, Jong-Min;Choi, Jong-Bum;Cho, Jeong-Ho;Kim, Byung-Ik;Shim, Kwang-Bo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.210-211
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    • 2005
  • [ $(K_{0.5}Na_{0.5})NbO_3$ ](KNN) 세라믹스의 소결 특성과 압전 특성을 높이기 위해 B-site에 Sb를 치환하여 Sb함량에 따른 특성을 측정 하였다. Sb 의 함량을 0mol $\sim$ 0.1mol 까지 첨가한 결과 소결 밀도는 Sb의 첨가량이 많아질수록 증가하다 Sb-0.08mol에서 4.40g/$cm^3$으로 가장 높은 밀도를 가졌으며, 여기서의 전기기계 결합 계수가(Kp) 0.45로 높은 값을 나타내었다. 상전 이 온도는 375$^{\circ}C$로 순수한 KNN 의 420$^{\circ}C$ 보다 약 45$^{\circ}C$정도 떨어졌으나 orthorhombic에 서 tetragonal 로 바뀌는 전이 온도는 KNN이 220$^{\circ}C$, KNNS 가 225$^{\circ}C$로 크게 변하지 않았다.

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Second Harmonic Generation and Frequency Stabilization of a Diode Laser Using an External Ring Resonator

  • Kwon, Taeg-Yong;Yang, Sung-Hoon;Lee, Ho-Seong
    • Journal of the Optical Society of Korea
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    • v.2 no.1
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    • pp.1-4
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    • 1998
  • The second harmonic light of an 842 nm diode laser was generated from a KNbO3 crystal in an external ring resonator. The power of the second harmonic light was about 0.8 mV at an input fundamental power of 87 mW. The laser frequency was stabilized to the resonance frequency of the ring resonator, and the frequency fluctuation was measured as about 3 MHz.

Oxygen Vacancy Effects of Two-Dimensional Electron Gas in SrTiO3/KNbO3 Hetero Structure

  • Choi, Woo-Sung;Kang, Min-Gyu;Do, Young-Ho;Jung, Woo-Suk;Ju, Byeong-Kwon;Yoon, Seok-Jin;Yoo, Kwang-Soo;Kang, Chong-Yun
    • Journal of Sensor Science and Technology
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    • v.22 no.4
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    • pp.244-248
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    • 2013
  • The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.

$(Na,Li)NbO_3-BaTiO_3$세라믹스의 유전 및 압전 특성

  • Seong, Geum-Hyeon;Lee, Yu-Hyeong;Ryu, Ju-Hyeon;Jeong, Yeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.77-77
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    • 2009
  • $Pb(Zr,Ti_O_3$계 세라믹스는 우수한 압전 특성으로 인하여 압전변압기 및 액츄에이터, 센서 등 많은 분야에 응용이 되어져 왔다. 그러나, 최근 들어 $1000^{\circ}C$에서 급속도로 많은 휘발을 하는 PbO는 환경 및 인체에 나쁜 영향을 미칠 뿐 아니라 사용 후의 처리도 어려워 선진국에서는 사용을 제한하거나 줄이고 있는 추세에 있다. 따라서, PbO를 포함하지 않은 무연 (Lead-free)계 압전 세라믹스에 대한 연구가 많은 관심을 끌고 있으며 앞으로는E 장래성 있는 하나의 이슈 분야가 될 것이다. 이러한 Pb-based System 세라믹스를 대체 할 재료로서 $(Bi_{1/2}Na_{1/2})TiO_3$나 Tungsten-Bronze type, $(K_{1/2}Na_{1/2})NbO_3$ 등이 주로 연구가 되고 있다. 특히, alkali niobate를 기초로 한 $(K_{1/2}Na_{1/2})NbO_3(NKN)$은 무연 압전 물질로서 많은 주목을 받고 있다. 그러나, NKN의 주요 성분인 K 의 높은 조해성 때문에 일반적인 고상방법으로는 고 밀도의 세라믹을 얻기 힘들뿐더러 낮은 상전이 온도 때문에 많은 응용에는 제약이 되고 있다. 이러한 세라믹의 단점을 보완하고자 Hot forging, RTGG, SPS 등 과 같이 특수한 소결방법을 사용하여 고밀도의 세라믹을 제작하지만 이 방법들은 제품 대량 생산에 있어 경제적으로나 복잡한 제조과정을 고려할 때 매우 비효율적이라고 판단된다. 그러므로 $BaTiO_3$, $LiTaO_3$, Mg, Ca등을 첨가 시켜 소결을 향상시키고 고밀도를 얻기 위해 많은 연구가 진행 중이다. 따라서 본 연구에서는 Pb-based계의 세라믹스를 대체할 우수한 특성의 세라믹스를 제작하고자 기존의 $(K_{1/2}Na_{1/2})NbO_3(NKN)$세라믹스에서 낮은 용융온도 때문에 소결하기 어려운 $KNbO_3$를 제거한 $NaNbO_3$$LiNbO_3$$BaTiO_3$를 추가한 $NaLiNbO_3-BaTiO_3$세라믹스에 $K_4CuNb_8O_{23}$(KCN)을 첨가함으로서 이에 따른 압전 및 유전 특성을 조사하였다.

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Electrocaloric Effect of (Bi0.5Na0.5)TiO3 Ceramics ((Bi0.5Na0.5)TiO3 세라믹스의 유전 및 전기열량 특성)

  • Han, Jong-Dae;Yoo, Ju-Hyun;Jeong, Yeong-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.5
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    • pp.284-287
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    • 2017
  • The electrocaloric effect in $0.94(Bi_{0.5}Na_{0.5})TiO_3+0.06KNbO3+0.9wt%$ G.F.ferroelectricceramics was observed in terms of the temperature change (${\Delta}T$) of the fabricated ceramics, Curie temperature $T_c$, and applied electric field. The specimens were fabricated by a conventional solid-state reaction. $T_c$ appeared near $165{\sim}170^{\circ}C$. The P-E hysteresis showed a tendency to slim down with a temperature increase and finally was slimmest near $150^{\circ}C$. With the increase of temperature, the polarization revealed a gradual decrease, and a sharp decline near $T_c$. When an electric field of 45 kV/cm was applied, the largest polarization was shown. The maximum value of the temperature change (${\Delta}T=0.31^{\circ}C$) was obtained at $165^{\circ}C$ under an applied electric field of 45 kV/cm.

(1-x)$(Na_{0.5}K_{0.5})NbO_3-xLiNbO_3$ 무연 압전세라믹스의 첨가물질에 따른 전기적 특성 평가

  • U, Deok-Hyeon;Ryu, Seong-Rim;Yun, Man-Sun;Gwon, Sun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.260-260
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    • 2007
  • 강유전성 세라믹스 재료로써는 PZT계열의 세라믹재료가 널리 쓰이고 있다. 이는 우수한 유전 및 압전특성을 가지고 있으나, PbO을 다량 함유하고 있어 $1000^{\circ}C$이상에서 PbO가 급격하게 휘발되는 성질에 따라서 조성의 변동이 생겨 재현성이 어려우며 이를 방지하기 위하여 과잉 PbO를 첨가시키기 때문에 PbO휘발로 인한 강한 독성이 인체에 유해하다. 최근에는 Pb의 환경문제가 대두됨에 따라 이를 대체할 다른 물질의 개발이 활발하게 연구되고 있다. 대표적인 비납계 강유전 세라믹스인 $(Na_{0.5}K_{0.5})NbO_3$ ($d_{33}$ = 120 pC/N, Kp = 39%, Qm = 210, 이하 NKN라 표기) 조성은 $KNbO_3,\;NaNbO_3$ 상태도에 따라 순수한 NKN 세라믹스는 $1140^{\circ}C$에서 안정상을 가지나, 높은 온도로 인하여$Na_2O$$K_2O$가 쉽게 휘발됨에 따라 화학량 비의 변화가 생겨 이차 상을 형성하기도 한다. 따라서 본 연구에서는 $LiNbO_3$의 새로운 고용체를 추가시켜 기본 NKN조성에 압전성 및 고온에서의 상안정성을 향상시키고자 하였다. 최적 조성을 설계하기 위하여 (1-x)$(Na_{0.5}K_{0.5})NbO_3-xLiNbO_3$, x=(0,0.02,0.04,0.06,0.08)의 범위에서 조성을 변화시키면서 실험하였다. 시편 제작은 일반적인 세라믹스 소결 공정을 적용하였는데, $850^{\circ}C$에서 5시간 하소 후 $1080^{\circ}C$에서 2시간 소결하였다. 하소 및 소결 후에는 XRD분석을 통해 perovskite구조를 확인하였고, 미세구조 확인을 위해 주사전자현미경 (SEM)으로 관찰하였다. 압전특성을 평가하기 위해 압전 $d_{33}$-meter를 사용하였으며, impedance analyzer (HP 4194A)를 이용하여 전기적 특성을 측정하였다.

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