• Title/Summary/Keyword: $J_c$ (B)

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Electrical Characteristics and Microstructure of Thin Films $BaTiO_3$ depending on The Sintering Temperature ($BaTiO_3$계 박막의 소결온도에 따른 미세구조와 전기적 특성)

  • Kim, D.K.;Jeon, J.B.;Park, C.B.;Song, M.J.;Kang, Y.C.;Park, H.A.;Soo, B.M.;Kim, T.W.;Kang, D.Y.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1573-1576
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    • 1997

  • Thin films of $BaTiO_3$ system were prepared by radio frequency (rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat - treatment temperatures. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films shows that the specimen heat treated in between 900 and 1100[$^{\circ}C$] shows a grain growth. At 1100[$^{\circ}C$], the specimen stops grain-growing and becomes a crystal. A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn.

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Fabrication and Characterization of Low Noise Amplifier using MCM-C Technology (MCM-C 기술을 이용한 저잡음 증폭기의 제작 및 특성평가)

  • Cho, H.M.;Lim, W.;Lee, J.Y.;Kang, N.K.;Park, J.C.
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.11a
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    • pp.61-64
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    • 2000

  • We fabricated and characterized Low Noise Amplifier (LNA) using MCM-C (Multi-Chip-Module-Cofired) technology for 2.14 GHz IMT-2000 mobile terminal application. First, We designed LNA circuits and simulated it's high frequency characteristics using circuits simulator. For the simulation, we adopted high frequency libraries of all the devices used in LNA samples. By the simulation, Gain was 17 dB and Noise Figure was 1.4 dB. We used multilayer process of LTCC (Low Temperature Co-fired Ceramics) substrate and conductor, resistor pattern for the MCM-C LNA fabrication. We made 2 buried inductors, 2 buried capacitors and 3 buried resistors. The number of the total layers was 6. On the top layer, we patterned microstrip line and pads for the SMT device. We measured the high frequency characteristics, and the results were 14.7 dB Gain and 1.5 dB Noise Figure.

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The physical properties of several HTS coated conductors

  • Lee, Nam-Jin;Oh, Sang-Soo;Song, Kyu-Jeong;Ha, Dong-Woo;Kim, Ho-Sup;Ha, Hong-Soo;Ko, Rock-Kil;Kim, Tae-Hyung;Kim, Sang-Cheol;Yu, Kwon-Kuk;Moon, Seung-Hyun;Youm, Do-Jun
    • Progress in Superconductivity and Cryogenics
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    • v.9 no.4
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    • pp.19-23
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    • 2007

  • The superconducting properties of several HTS coated conductors (CC), which had different tape structures, fabricated by KERI, X and Y institutes were compared. We have fabricated the $high-J_c$ SmBCO CC, which has 273.5 A/cm, $1.2MA/cm^2$ and 93.5 K for $I_C,\;J_C\;and\;T_{c-zero}$, respectively, using the EDDC (Evaporation using Drum in Dual Chambers) process. Both X and Y institutes CCs, however, were purchased. The n-values of KERI, X and Y institutes CCs are 58.5, 40.7 and 31.5 in $V=1{\sim}10{\mu}V$ criterion, respectively. The in-field properties of $I_C$ at 77K were investigated and the $J_C(B)/J_C(0G)$ at 0.5 T with $B{\perp}$ ab-plane are 0.31, 0.19 and 0.24 for KERI, X and Y institutes CCs, respectively. From the $I_C-{\theta}-B$ measurement, we observed that the ab-plane of ReBCO phase was tilted for the ab-plane of substrate in the KERI and X institutes CCs. The tilted angle is about 5 degree. We confirmed that the peak shift (as an inclined texture) was observed by X-ray (102) pole figures of the SmBCO for the KERI CC.

  • https://doi.org/10.9714/psac.2007.9.4.019 인용 PDF KSCI