• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.111-112
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• 2005

To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• 공학논문집
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• 제5권1호
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• pp.73-87
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• 2004

수산화칼슘현탁액과 탄산가스를 출발물질로 15~$50^{\circ}C$의 온도에서 기액반응으로 비정질 탄산칼슘($CaCO_3$.$nH_2 O$)의 생성과정을 전기저도도의 연속측정법, X-선회절법 및 투과전자현미경법을 이용하여 조사한 결과, 반응초기생성물은 비정질 탄산칼슘으로 반응현탁액의 전기전도도는 비정질 탄산칼슘의 생성 중 크게 강하하고 있으며, 이것은 수산화칼슘의 입자표면이 비정질 탄산칼슘미립자로 뒤덮여 용해를 방해받는 것과 비정질 탄산칼슘이 용액 속에서 불안정하여 즉시 용해한 다음 석출하여 칼사이트로 전이되어 미세한 침강성 탄산칼슘이 나란히 결합한 연쇄형 칼사이트가 생성된다. 비정질 탄산칼슘이 연쇄형 칼사이트로 변화하는 동안 현탁액의 전기전도도는 급격히 회복되고 이 과정에서 고농도 수산화칼슘현탁액의 외관점도가 상승한다. 이것은 연쇄형 칼사이트의 뒤얽힘에 의한 것이며, 다시 전기전도도의 1회 회복단계 이후에는 미반응 수산화칼슘에 의하여 비정질 탄산칼슘이 생성이 소멸되어 칼사이트의 성장반응이 이루어지고 pH가 9.5이하에서 연쇄형 칼사이트는 결합부분이 먼저 용해하여 결정질 탄산칼슘으로 분리생성된다. 비정질 탄산칼슘의 생성 및 합성온도의 영역은 전기전도도법에서 $15^{\circ}C$일 때 1차 강하단계(a-단계)에서 가장 적합하다.

• 센서학회지
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• 제13권2호
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• 대한치과재료학회지
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• 제44권2호
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• pp.151-161
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• 2017

본 연구에서는 다양한 두께와 색조를 가진 레진 -나노세라믹 CAD-CAM block(RNB)의 시편을 이용하여 광중합 시 시편을 투과하는 광자의 수와 시편을 통과하는 빛의 양에 영향을 미칠 수 있는 반투명도 지수를 측정하고, 시편 하방의 이원중합 레진시멘트의 미세경도 측정을 통해 그 중합적 특성을 파악하였다. Lava Ultimate (3M/ESPE, St. Paul, MN, USA) 세라믹 시편을 A1, A2, A3색조 (HT (high translucency)와 LT (low translucency))로 각각 1, 2, 3, 4 mm 두께로 제작하였다 (n = 3). Photodiode detector (M1420, EG&G PARC, Princeton, NJ, U.S.A.)를 통해 시편을 통과하는 광자의 수를 측정하였고 spectrophotometer (SpectroPro-500, Acton Research, Acton, MA, U.S.A.)를 이용하여 시편의 반투명도 지수를 측정하였다. Stainless steel mold (6 mm 직경, 1 mm 두께)를 제작하여 이원중합 레진시멘트(Rely X ARC, 3M/ESPE, St. Paul, MN, USA)를 제조사의 지시대로 조작하여 적용 후 Mylar strip를 얹은 뒤 주입된 레진시멘트가 완전히 덮일 수 있도록 각 실험군의 시편을 위치시키고 광조사기로 40초간 광중합 하였다. 이후 24시간 동안 $37^{\circ}C$에 보관 후 미세경도를 측정하였다. 광자의 수는 HT, LT군에서 모두 세라믹 시편의 두께가 증가함에 따라 유의하게 감소하였고, A1 군이 A2군과 A3군에 비해 유의하게 적은 감소를 보였다 (p<0.05). 반투명도 지수는 HT, LT 그룹에서 시편의 두께가 증가함에 따라 유의하게 감소하였고 A1군이 A2군과 A3군에 비해 높은 값을 나타냈다 (p<0.05). HT, LT그룹 각각 두께가 증가함에 따라, 색조가 증가함에 따라 미세경도는 감소하였으며, 1 mm군과 4 mm군, 그리고 A1군과 A3군에서는 통계적으로 유의하게 감소하였다 (p<0.05).