• Journal of the Korean Magnetics Society
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• 제7권5호
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• pp.237-242
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• 1997

The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at $P_{O2}=10%$ by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, is investigated. Newly developed $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits good soft magnetic properties with $4{\pi}M_s=17.7$ kG, $H_c=0.7$ Oe and ${\mu}_{eff}$(0.5~100MHz)=2,500, respectively. The Fe-Hf-O films are composed of $\alpha$-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally. It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf. It results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity. The $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits the quality factor (Q=$\mu$'/$\mu$") of 25 at 20 MHz. These good frequency characteristics are considered to be superior to other films already reported.o other films already reported.

• Korean Journal of Materials Research
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• 제15권5호
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• Journal of the Korean Ceramic Society
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• 제56권3호
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• pp.317-324
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• 2019

Cr-diamond-like carbon (Cr-DLC) films were deposited using a hybrid method involving both physical vapor deposition and plasma-enhanced chemical vapor deposition. DLC sputtering was carried out using argon and acetylene gases. With an increase in the DC power, the Cr content increased from 14.7 to 29.7 at%. The Cr-C bond appeared when the Cr content was 17.6 at% or more. At a Cr content of 17.6 at%, the films showed an electrical conductivity of > 363 S/cm. The current density was 9.12 × 10^-2 ㎂/㎠, and the corrosion potential was 0.240 V. Therefore, a Cr content of 17.6 at% was found to be optimum for the deposition of the Cr-DLC thin films. The Cr-DLC thin films developed in this study showed high conductivity and corrosion resistance, and hence, are suitable for applications in separators.

• The Transactions of the Korean Institute of Electrical Engineers P
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• 제67권4호
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• pp.214-220
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• 2018

Light sources induced by gas discharge using rare gases have been widely used in the thin film deposition, the surface modification and the polymer etching. A dielectric barrier discharge (DBD) has been developed in order to consistently emit light and control the wavelength of the emission light. However, much research on the characteristics of the movement of discharge particles is required to improve the efficiency of the light lamp and the life-time of the light apparatus in detail. In this paper, we developed a He DBD discharge simulation tool and investigated the characteristics of discharge particles which were electrons, two positive ions ($He^+$, $He_2^+$) and 5 excited particles ($He^*(1S)$, $He^*(3S)$, $He^*$, $He^{**}$, $He^{***}$). The discharge currents showed the transition from pulse mode to continuous mode with the increase of power. With the accumulated charges on the barrier walls, the discharge current was rapidly increased and caused oscillation of the discharge voltage. As the gas pressure increased, $He_2^+$ and $He^*(3S)$ became the dominant activated particles. The input power was mostly consumed by electrons and $He_2^+$ ion. And the change curve showed that power consumption by electrons increased more with gas pressure than with source voltage or frequency.

• Journal of the Korean Vacuum Society
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• 제7권1호
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• pp.51-58
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• 1998

ZnS and TB-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (AKE) and characterized using materials and surface analysis techniques. $ZnCl_2$, $H_2$S,and tris(2,26,6-tetramethyl-3,5-heptandionato) terbium ($Tb(TMHD)_3$) were used as the precursors in the growth of ZnS:Tb films. The dependence of Cl content in ZnS films on growth temperature was investigated using Rutherford backscattering spectrometry. The Cl content decreased from approximately 9 at.% to 1 at. % as increasing the growth temperature from 400 to $500^{\circ}C$. The segregation of Cl in near surface region was also observed by depth profiling using Auger electron spectroscopy. Scanning electron microscopic studies showed that the ALE-grown ZnS and ZnS:Tb film during ALE process using $Tb(TMHD)_3$was also investigated. Approximately 1 at.% of O in ZnS:Tb(0.5 at.%) film which showed a good crystallinity of hexagonal 2H structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.529-532
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• 2003

Quench behavior of resistive superconducting fault current limiters (SFCLs) with various pattern shapes was investigated. The pattern shapes employed were meander, bi-spiral, and spiral shapes of identical line width, gap and margin. SFCLs were fabricated from YBCO thin films grown on two-inch diameter $Al_2O_3$ substrates under the same conditions. Resistance rise of current limiting elements was low at a spiral shape before the whole quench completion, which may act as a disadvantage for simultaneous quench in serial connection between current limiting elements, but the temperature tended to have similar values at higher voltages. On the other hand, bi-spiral shape was severe at insulation level between current limiting lines. When these aspects were considered, we concluded that a meander shape was appropriate to design for a resistive SFCL based on thin films except the concentration of electric field at edge areas of strip lines.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권3호
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of Information Display
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• 제9권3호
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• pp.16-22
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• 2008

A novel class of conjugated dendritic molecules bearing N-hexyl-substituted carbazoles as peripheral groups and various conjugative aromatic cores was synthesized through Heck coupling and the Horner-Emmons reaction. A multilayered structure of ITO/PEDOT:PSS (30 nm)/emitting material (50 nm)/BCP (10 nm)/$Alq_3$ (10 nm)/LiF (1 nm)/Al (100 nm) was employed to evaluate the synthesized dendritic materials. The electroluminescence spectrum of the multilayered device made of 3Cz predominantly exhibited blue emissions. Similar emissions were observed in the PL spectra of it's the device's thin film. The multilayered devices made of 3Cz, 3BCz, and 4BCz showed luminance values of 6,250 cd $m^{-2}$ at 24 V, 3,000 cd $m^{-2}$ at 25 V, and 1,970 cd $m^{-2}$ at 36 V, respectively. The smallest molecule, 3Cz, which bore three carbazole peripheral groups, exhibited a blue-like emission with CIE 1931 chromaticity coordinates of x = 0.17 and y = 0.21.

• Journal of the Korean Chemical Society
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• 제41권11호
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• pp.594-599
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• 1997

Lithium nickel oxide ($Li_{2x}Ni_{1-x}O$) thin films have been prepared by the RF sputtering of lithiated nickel oxide target, where the film microstructure was controlled by the sputtering atmosphere $(Ar/O_2)$ and the substrate temperature ($T_s=50/230^{\circ}C$). From the transmission electron microscopic analysis, it is found that the most porous film with the grain size of $∼80\AA$ could be fabricated under the sputtering atmosphere of $P(O_2)=8{\times}10^2$ mbar with the $$T_s$=50^{\circ}C.$ In the optical and electrochemical studies, the$Li_{2x}Ni_{1-x}O$ films exhibit a significant electrochromic property in association with the lithium insertion/deinsertion process. The amount of charge insertion ($Q_i$) and the optical density (OD) variation depend on the crystallinity of the film as well as its thickness, and for the $Li_{2x}Ni_{1-x}O$ film (170 nm thickness) prepared under $O_2$ atmosphere and $T_s=50^{\circ}C$, the OD could be increased up to ∼1.3 by the charge insertion with $Q_i=30\;mC/cm^2.$

• Bulletin of the Korean Chemical Society
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• 제11권1호
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• pp.11-15
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• 1990

The temperature dependence of electrical conductivities and thermoelectric power of $I_2$-doped poly(1,4-penylene vinylene-co-2,5-dimethoxy-1,4-phenylene vinylene)s [poly(PV-co-DMPV)] and poly(1,4-phenylene vinylene-co-2,5-thienylene vinylene)s [poly(PV-co-TV)] were studied. The former copolymers were also doped with $FeCl_3$. All the samples used were in thin film forms. The temperature dependence of electrical conductivity implies that the variable range hopping conduction mechanism applises to these systems. The activation energy for the electrical conduction in dimethoxy-phenylene vinylene (DMPV) copolymers ranged from about 7 to 30 meV depending on the polymer composition and the nature of the dopant. It was significantly higher for $I_2$-doped thienylene vinylene (TV) copolymers, namely 90-200 meV. The values of the room temperature thermoelectric power were $30-70{\mu}V/K$ for DMPV copolymer and $100-800{\mu}V/K$ for TV copolymers. Anisotropy in the electrical conductivities was also studied for oriented films obtained by uniaxial stretching of the precursor polymer films.