• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.39-45
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• 2003

The varistor properties of ZnO-Pr$_{6}$O$_{11}$-CoO-based ceramics doped with Sm$_2$O$_3$were investigated in the addition range of 0.0~2.0 mol% Sm$_2$O$_3$at sintering temperature of 130$0^{\circ}C$ and 135$0^{\circ}C$. As Sm$_2$O$_3$ content is increased, the breakdown voltage was increased in the range of 348.9~521.8 V/mm for ceramics sintered at 130$0^{\circ}C$ and 8.5~381.3 V/mm for ceramics sintered at 135$0^{\circ}C$. On the whole, the increase of sintering temperature led to the low nonlinearity regardless of Sm$_2$O$_3$content. ZnO-Pr$_{6}$O$_{11}$-CoO-based ceramics doped with 1.0 mol% at each sintering temperature exhibited the most superior varistor properties, with the nonlinear exponent of 42.1 at 130$0^{\circ}C$, 36.8 at 135$0^{\circ}C$ and the leakage current of 9.2 $\mu$A at 130$0^{\circ}C$, 11.7 $\mu$A at 135$0^{\circ}C$.EX>.EX>.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.663-668
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• 2012

In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of $In_{1.6{\sim}1.8}Zn_{0.2}Sn_{0.2{\sim}0.4}O_3$ (IZTO), $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{\delta}}$(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at $400^{\circ}C$, the electrical resistivity of the film decreased to $6.34{\times}10^{-4}{\Omega}{\cdot}cm$ and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.

• Economic and Environmental Geology
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• v.45 no.6
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• pp.623-641
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• 2012

The Janggun lead-zinc-silver deposit is hydrothermal-metasomatic deposit. We have sampled wallrock, hydrother-maly-altered rock and lead-zinc-silver ore vein to study the element dispersion during wallrock alteration. The hydrothermal alteration that is remarkably recognized at this deposit consists of rhodochrositization and dolomitization. Wallrock is dolomite and limestone that consisit of calcite, dolomite, quartz, phlogopite and biotite. Rhodochrosite zone occurs near lead-zinc-silver ore vein and include mainly rhodochrosite with amounts of calcite, dolomite, kutnahorite, arsenopyrite, pyrite, chalcopyrite, sphalerite, galena and stannite. Dolomite zone occurs far from lead-zinc-silver ore vein and is composed of mainly dolomite and minor calcite, rhodochrosite, pyrite, sphalerite, chalcopyrite, galena and stannite. The correlation coefficients among major, trace and rare earth elements during wallrock alteration show high positive correlations(dolomite and limestone = $Fe_2O_3(T)$/MnO, Ga/MnO and Rb/MnO), high negative correlations(dolomite = MgO/MnO, CaO/MnO, $CO_2$/MnO, Sr/MnO; limestone = CaO/MnO, Sr/MnO). Remarkable gain elements during wallrock alteration are $Fe_2O_3(T)$, MnO, As, Au, Cd, Cu, Ga, Pb, Rb, Sb, Sc, Sn and Zn. Remarkable loss elements are CaO, $CO_2$, MgO and Sr. Therefore, elements(CaO, $CO_2$, $Fe_2O_3(T)$, MgO, MnO, Ga, Pb, Rb, Sb, Sn, Sr and Zn) represent a potential tools for exploration in hydrothermal-metasomatic lead-zinc-silver deposits.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.253-253
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• 2015

최근 세계적으로 대체 에너지는 중요한 이슈가 되고 있으며 특히 열전 재료는 유망한 에너지 기술로서 주목 받고 있다. 특히 고 직접화 전자 소자의 발열 문제를 해결하기 위해, 소형화와 정밀 온도 제어가 가능한 박막형 열전 소자에 대한 관심이 크다. 박막형 열전소자 중 산화물 반도체계에 대한 연구가 활발히 진행되고 있으며, 이러한 산화물 반도체계 중 In2O3는 BiTe, PbTe 등의 기존의 재료에 비해 독성이 낮을 뿐만 아니라 고온에서 열적 안정성이 우수하여 고온에서 적용 불가능한 금속계 열전 재료의 한계를 극복할 수 있다는 장점을 가진다. 좋은 성능의 열전 재료는 높은 전기 전도도 및 제백 계수 그리고 낮은 열전도도 특성을 가져야 한다. 비정질 구조를 가지는 박막 열전 재료는 격자에 의한 열 전도도가 낮기 때문에 결정질 구조와 비교하여 전체 열 전도도 값이 낮을 것으로 기대된다. 이러한 특성을 바탕으로 본 연구에서는 비정질 구조를 갖는 ZnO와 SnO2를 동시에 첨가한 In2O3 박막의 전기적 특성과 열전 특성에 관한 연구를 하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.18-21
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• 2014

Because the Pb-based piezoelectric materials showed problems such as an environmental pollution. lead-free $O_3$ materials were studied in the present study. The $O_3$ thin films were deposited at $640^{\circ}C$ on $Pt/Ti/SiO_2$ substrate by pulsed laser deposition (PLD) and were annealed for 5 min at $750^{\circ}C$ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at $750^{\circ}C$ showed a smooth morphology and an improvement of the dielectric and leakage properties, as compared with as-grown samples. However, electrical properties of the $O_3$ thin films obtained in the present study should be improved for piezoelectric applications.

• Journal of Powder Materials
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• v.28 no.3
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• pp.239-245
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• 2021

The SnSe single crystal shows an outstanding figure of merit (ZT) of 2.6 at 973 K; thus, it is considered to be a promising thermoelectric material. However, the mass production of SnSe single crystals is difficult, and their mechanical properties are poor. Alternatively, we can use polycrystalline SnSe powder, which has better mechanical properties. In this study, surface modification by atomic layer deposition (ALD) is chosen to increase the ZT value of SnSe polycrystalline powder. SnSe powder is ground by a ball mill. An ALD coating process using a rotary-type reactor is adopted. ZnO thin films are grown by 100 ALD cycles using diethylzinc and H₂O as precursors at 100℃. ALD is performed at rotation speeds of 30, 40, 50, and 60 rpm to examine the effects of rotation speed on the thin film characteristics. The physical and chemical properties of ALD-coated SnSe powders are characterized by scanning and tunneling electron microscopy combined with energy-dispersive spectroscopy. The results reveal that a smooth oxygen-rich ZnO layer is grown on SnSe at a rotation speed of 30 rpm. This result can be applied for the uniform coating of a ZnO layer on various powder materials.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.301-307
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• 2014

We have fabricated $SnO_2$/Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• 한국전자현미경학회:학술대회논문집
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• 2005.05a
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• pp.59-65
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• 2005

• Transactions of the Korean hydrogen and new energy society
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• v.14 no.3
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• pp.268-275
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• 2003

The water-splitting process by the metal oxides using solar heat is one of the hydrogen production method. The hydrogen production process using the metal oxides (NiFe2O4/NiAl2O4,CoFe2O4/CoAl2O4, CoMnNiFerrite, CoMnSnFerrite, CoMnZnFerrite, CoSnZnFerrite) was carried out by two steps. The first step was carried out by the CH4-reduction to increase activation of metal oxides at operation temperature. And then, it was carried out the water-splitting reaction using the water at operation temperature for the second step. Hydrogen was produced in this step. The production rates of H2 were 110, 160, 72, 29, 17, $21m{\ell}/hr{\cdot}g-_{Metal\;Oxide}$ for NiFe2O4/NiAl2O4, CoFe2O4/CoAl2O4, CoMnNiFerrite, CoMnSnFerrite, CoMnZnFerrite, CoSnZnFerrite respectively in the second step. CoFe2O4/CoAl2O4 had higher H2 production rate than the other metal oxides.