• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.371-377
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• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.309-316
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• 2006

The $SnO_{2}$ thin film sensors were fabricated by a thermal oxidation method. $SnO_{2}$ thin film sensors were treated in $N_{2}$ atmosphere. The sensors with $O_{2}$ treatment after $N_{2}$ treatment showed 70 % sensitivity for 1 ppm $H_{2}S$ gas, which is higher than the sensors with only $O_{2}$ treatment. The Ni metal was evaporated on Sn thin film on the $Al_{2}O_{3}$ substrate. And the sensor was heated to grow the Sn nanowire in the tube furnace with $N_{2}$ atmosphere. Sn nanowire was thermally oxidized in $O_{2}$ environments. The sensitivity of $SnO_{2}$ nanowire sensor was measured at 500 ppb $H_{2}S$ gas. The selectivity of $SnO_{2}$ nanowire sensor compared with thin film and thick film $SnO_{2}$ was measured for $H_{2}S$, CO, and $NH_{3}$ in this study.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3299-3302
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• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.571-574
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• 2000

In this study, Tin oxide thin film for secondary battery was deposited on Pt/Ti/Si(100). It was fabricated by r.f. reactive sputtering with Tin metal target. At constant power (130W), pressure (Base 5$\times$10$^{-6}$ Torr, working 5$\times$10$^{-3}$ Torr) and at room temperature, it was fabricated by Ar/O2 gas ratio. After deposition, we got AFM & SEM to investigated surface of thin films and had XRD to find crystalline of thin films. Charge/discharge characteristics were carried out in 1M LiPF$_{6}$ , EC:DMC = 1:1 liquid electrolyte using lithium metal at room temperature.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.35-39
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• 2003

This paper is contents on the orthorhombic crystalline calcined by the solid phase method with LiMnO$_2$ thin film structured as the result which an average pore diameter of power was 132.3${\AA}$ in porosity analysis. Voltage ranges are able to get the properties of charge and discharge for experimental results of LiMnO$_2$ thin film were 2.2V 4.3V. The current density and scan speed were 0. 1㎃/$\textrm{cm}^2$ and 0.2㎷/sec respectively. Properties of the charge and discharge are obtained by optimum experiment condition parameters. Li dense ratio of the LiMnO$_2$ thin film that discharged capacities were 87㎃h/g have been 96.9［ppm］ at 670.784［nm］ wavelength. The dense ratio of Mn analyzed to 837［ppm］ at 257.610［nm］ wavelength. It can be estimated the quality of the LiMnO$_2$ thin film as that the wrong LiMnO$_2$ thin film pulled up from cell of electrolyte and became dry it at 800$^{\circ}C$. The results of SEM and XRD were the same as that of original researchers.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.76-79
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• 2011

In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO ($In_2O_3$ 90wt%, $SnO_2$ 10wt%) target and an AZO (ZnO 98wt%, $Al_2O_3$ 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX).

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.422-425
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• 2004

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.