• Korean Journal of Materials Research
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• v.32 no.9
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• Journal of Surface Science and Engineering
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• v.47 no.5
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• pp.263-268
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• 2014

Nanocrystalline diamond(NCD) coated SiC balls were applied in a ball-on-disk tribometer. After seeding in an ultrasonic bath containing nanometer diamond powders, $2.2{\mu}m$ thick NCD films were deposited on sintered 3 mm diameter SiC balls at $600^{\circ}C$ in a 2.45 GHz microwave plasma CVD system. Bare $ZrO_2$ and SiC balls were prepared for comparison as test balls. Tribology tests were performed in air with pairs of three different balls and mirror polished steel(SKH51) disk. The wear tracks on balls and disks were examined by optical microscope and alpha step profiler. Under the load of 3 N, the friction coefficients of steel against $ZrO_2$, SiC and NCD-coated balls were between 0.4 and 0.8. After a few thousands sliding laps, the friction coefficient of NCD-coated balls dropped from 0.45 to below 0.1 and maintained thereafter. Under a higher load of 10 N or 20 N with a long sliding distance of 2 km, $ZrO_2$ and SiC balls exhibited the similar friction coefficients as above. The friction coefficient of NCD-coated balls was less than 0.1 from the beginning and increased to above 0.1 steadily or with some fluctuations as sliding distance increased. NCD coating layers were found worn out after long duration and/or high load sliding test, which resulted in the friction coefficient higher than 0.1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.337-343
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• 2020

This study investigated the low temperature sintering with various templates of Bi-based lead-free piezoelectric ceramics. The effects of using CuO-coated Na_0.5Bi_4.5Ti₄O₁₅ templates on the sintering behavior as well as the dielectric, ferroelectric, and piezoelectric properties of Bi_1/2(Na_0.78K_0.22)_1/2TiO₃ (BNKT) ceramics have been examined. In comparison with the specimens sintered with the Na_0.5Bi_4.5Ti₄O₁₅ templates without CuO coating, those sintered with the CuO-coated Na_0.5Bi_4.5Ti₄O₁₅ templates showed larger template sizes as well as a larger electric field induced strain (S_max/E_max) of 422 pm/V after sintering at temperatures as low as 975℃. These results are promising for low-cost multilayer ceramic actuator applications.

• Progress in Superconductivity and Cryogenics
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• v.7 no.3
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• pp.9-12
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• 2005

[ $Y_1Ba_2Cu_3O_{7-8}$ ] (YBCO) coated conductor has been fabricated by batch-type process using oxide-precursor-based metal-organic deposition (MOD) method. The batch-type process can be scaled up more simply to Produce long-length YBCO conductor than the reel-to-reel process. Also, it has less handling problems and is adequate to the ambient gas environment. In this work, YBCO oride powder was used as a starting precursor for MOD method. After reel-to-reel dip coating process, me ter-long-buffered metal tape was wound around a cylinder and underwent calcination and annealing processes. Annealed YBCO films showed good c-axis alignment and dense surface morphology with no cracks, but exhibited very low critical current density of $10^5\;A/cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.3
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• pp.83-88
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• 2015

Coating materials used in the electron beam (EB) deposition method, which is being studied as one of the fabrication methods of thermal barrier coating, are exposed to high power electron beam at focused area during the EB deposition. Therefore the coating source for EB process is needed to form as ingot with appropriate density and microstructure to sustain their shape and stable melts status during EB deposition. In this study, we tried to find the optimum powder condition for fabrication of ingot of 8 wt% yttria stabilized zirconia which can be used for EB irradiation. It seems that the ingot, which is fabricated through bi-modal type initial powder mixture which consists of tens of micro and nano size particles, was shown better performance than the ingot which is fabricated using monolithic nanoscale powder when exposed to high power EB.

• Journal of the Korean Electrochemical Society
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• v.4 no.3
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• pp.125-131
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• 2001

A long-term variation of electrode polarization in the MCFC has been analyzed successfully using a single cell with a Au, $CO_2/O_2$ reference electrode Four different cells with different components were operated and their electrode polarizations were analyzed. As published in the literatures, the cathode polarization was larger than that of the anode. The more stable operation of a single cell with the Al-coated cell frame up to 6,000hrs indicates that the corrosion at the cell frame, particularly wet seal area, plays an important role to determine the lifetime of a MCFC. At the initial stage of the cell operation, the voltage of the cell using a cathode stabilized by the $LiCoO_2$ coating was relatively low due to the high cathode polarization. As the cell was operated and the stabilized cathode was lithiated sufficiently, the cathode polarization decreased and the cell voltage was recovered. It was observed that the voltage of the cell using the $Li_2CO_3/Na_2CO_3$ electrolyte fluctuated with operation time and the cathode polarization fluctuated along with the cell voltage quite similarly. Although the mechanisms of the voltage fluctuation were not clear yet, the results imply that the voltage fluctuation was related with a reaction in the cathode side. After testing every single cell, the cathode polarization increased with the steep decrease in the cell voltage. Thus, the cathode should be improved in order to develop more durable MCFC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.288-291
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• 2001

It is very important to select suspension solution for forming electrophoretic deposited YBCO thick mm, because it is heavily affected to its superconducting properties. In this paper, high-temperature superconductor films of $YBa_{2}Cu_{3}O_{7-x}$ were fabricated by electrophoretic deposition (EPD) from alcohol-based suspension such as iso-propanol, iso-butanol, and their mixture. For the formation of YBCO dense and adherent coating on a silver wire by EPD, 1 % PEG(1000) 2 ml, as a additive for making their surface crack-free, was used for electrophoresis. As a results, the cracks were considerably decreased and the superconducting critical current density $(J_e)$ without/with PEG was $1200A/cm^2$ and $2020A/cm^2$, which films deposited in mix iso-propanol and iso-butanol suspension.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.288-291
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• 2001

It is very important to select suspension solution for forming electrophoretic deposited YBCO thick film, because it is heavily affected to its superconducting properties. In this paper, high-temperature superconductor films of YBa$_2$Cu$_3$$O_{7-x}$ were fabricated by electrophoretic deposition (EPD) from alcohol-based suspension such as iso-propanol, iso-butanol, and their mixture. For the formation of YBCO dense and adherent coating on a silver wire by EPD, 1% PEG(1000) 2 $m\ell$, as a additive for making their surface crack-free, was used for electrophoresis. As a results, the cracks were considerably decreased and the superconducting critical current density (J$_{c}$) without/with PEG was 1200 A/$\textrm{cm}^2$ and 2020 A/$\textrm{cm}^2$, which films deposited in mix ism-propanol and iso-butanol suspension.ion.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.