• Title/Summary/Keyword: $In_2O_3$ coating

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Effect of Al2O3 Inter-Layer Grown on FeCrAl Alloy Foam to Improve the Dispersion and Stability of NiO Catalysts (NiO 촉매의 분산성 및 안정성 향상을 위하여 FeCrAl 합금 폼 위에 성장된 Al2O3 Inter-Layer 효과)

  • Lee, Yu-Jin;Koo, Bon-Ryul;Baek, Seong-Ho;Park, Man-Ho;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.25 no.8
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    • pp.391-397
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    • 2015
  • NiO catalysts/$Al_2O_3$/FeCrAl alloy foam for hydrogen production was prepared using atomic layer deposition (ALD) and subsequent dip-coating methods. FeCrAl alloy foam and $Al_2O_3$ inter-layer were used as catalyst supports. To improve the dispersion and stability of NiO catalysts, an $Al_2O_3$ inter-layer was introduced and their thickness was systematically controlled to 0, 20, 50 and 80 nm using an ALD technique. The structural, chemical bonding and morphological properties (including dispersion) of the NiO catalysts/$Al_2O_3$/FeCrAl alloy foam were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy and scanning electron microscopy-energy dispersive spectroscopy. In particular, to evaluate the stability of the NiO catalysts grown on $Al_2O_3$/FeCrAl alloy foam, chronoamperometry tests were performed and then the ingredient amounts of electrolytes were analyzed via inductively coupled plasma spectrometer. We found that the introduction of $Al_2O_3$ inter-layer improved the dispersion and stability of the NiO catalysts on the supports. Thus, when an $Al_2O_3$ inter-layer with a 80 nm thickness was grown between the FeCrAl alloy foam and the NiO catalysts, it indicated improved dispersion and stability of the NiO catalysts compared to the other samples. The performance improvement can be explained by optimum thickness of $Al_2O_3$ inter-layer resulting from the role of a passivation layer.

The Preparation of High $J_c$ YBCO Films by DCA-MOD Method (DCA-MOD 법에 의한 High $J_c$ YBCO 박막의 제조)

  • Kim, Byeong-Joo;Kim, Hye-Jin;Yi, Keum-Young;Lee, Jong-Beum;Kim, Ho-Jin;Lee, Hee-Gyoun;Hong, Gye-Won
    • Progress in Superconductivity
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    • v.8 no.1
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    • pp.59-64
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    • 2006
  • High $J_c\;YBa_2Cu_3O_x$ superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Coating solutions were prepared by dissolving Y-, Ba- and Cu-acetates in DCA solvent followed by drying in rota vapor to obtain the blue gel that is diluted in methanol and 2-methoxyethanol for adjusting the cation concentration. DCA-MOD precursor solution was coated on a single crystal(001) $LaAlO_3(LAO)$ substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing oxygen atmosphere with a 7.2% humidity. Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. X-ray diffraction analysis showed that YBCO grains grew with a (001) preferred orientation. A High critical current density($J_c$) of 1.28 $MA/cm^2$(@77 K and self-field) was obtained id. the YBCO film prepared using 2-methoxyethanol as a solvent.

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Characteristics of Al-doped ZnO thin films prepared by sol-gel method (졸-겔법으로 제조한 Al-doped ZnO 박막의 특성에 관한 연구)

  • Kim, Yong-Nam;Lee, Seoung-Soo;Song, Jun-Kwang;Noh, Tai-Min;Kim, Jung-Woo;Lee, Hee-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.1
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    • pp.50-55
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    • 2008
  • AI-doped ZnO(AZO) thin films have been fabricated on glass substrate by sol-gel method, and the effect of Al precursors and post-annealing temperature on the characteristics of AZO thin films was investigated. The sol was prepared with zinc acetate, EtOH, MEA and Al precursors. In order to dope Al in ZnO, two types of aluminum nitrate and aluminum chloride were used as Al precursor. Zinc concentration was 0.5 mol/l and the content of Al precursor was 1 at% of Zn in the sol. The sol was spin-coated on glass substrate, and the coated films were annealed at 550ue for 2 hand were post-annealed at temperature ranges of $300{\sim}500^{\circ}C$ for 2 h in reducing atmosphere ($N_2/H_2$= 9/1). Structural, electrical and optical propertis of the fabricated AZO thin films were analyzed by XRD, FE-SEM, AFM, hall effect measurement system and UV-visible spectroscopy. Optical and electrical properties of AZO thin films prepared with aluminum nitrate as Al precursor were better than those of films prepared with aluminum chloride. The electrical resistivity and the optical transmittance of films decreased with increasing post-annealing temperatures. The minimum electrical resistivity of $2{\times}10^{-3}$ and the maximum optical transmittance of 91% were obtained for the AZO thin films post-annealed at $550^{\circ}C\;and\;300^{\circ}C$, respectively.

Seedling Establishment and Yield of Direct Subsurface Seeded Rice as Influenced by $CaO_2$ Coating and Seeding Rates (과산화석회 분의와 파종량이 침수 토중직파재배 벼의 입모와 수량에 미치는 영향)

  • 임준택;권병선;김학진
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.36 no.4
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    • pp.324-331
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    • 1991
  • To establish the direct seeding cultivation method in rice (Oryza sativa L.). direct subsurface seeding with different oxygen suppliers and seeding rates was conducted from May to Oct. 1989. at the experimental field of Suncheon National University. In direct subsurface seeding. calcium peroxide enhanced the ratio of seedling establishment. However. as number of plants per unit area increased. the occurrence of field lodging became progressively severe. so that the enhanced seedling establishment did not increase the yield. The optimal seeding rate and the number of sowing seeds per equally spaced spot were estimated to be 3.3Kg seeds/l0a and 3 seeds per spot with CaO$_2$-coated seeds. and 5.6Kg/10a and 5 seeds per spot with uncoated seeds. respectively, According to the results from the path coefficient analysis. percent of filled spikelets was identified to be the most influential variables on the variability in brown rice yield. so that improving percent of filled spikelets by inhibition of field lodging was the most important matter to increase the yield.

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Dispersion Stability and Mechanical Properties of ZrO2/High-temp Composite Resins by Nano- and Micro-particle Ratio for Stereolithography 3D Printing (나노 및 마이크로 입자 비율에 따른 광조형 3D 프린팅용 ZrO2/High-temp 복합 수지의 분산 안정성 및 기계적 특성)

  • Song, Se Yeon;Park, Min Soo;Yun, Ji Sun
    • Korean Journal of Materials Research
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    • v.29 no.4
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    • pp.221-227
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    • 2019
  • This study examines the role of the nano- and micro-particle ratio in dispersion stability and mechanical properties of composite resins for SLA(stereolithography) 3D printing technology. VTES(vinyltriethoxysilane)-coated $ZrO_2$ ceramic particles with different nano- and micro-particle ratios are prepared by a hydrolysis and condensation reaction and then dispersed in commercial photopolymer (High-temp) based on interpenetrating networks(IPNs). The coating characteristics of VTES-coated $ZrO_2$ particles are observed by FE-TEM and FT-IR. The rheological properties of VTES-coated $ZrO_2/High-temp$ composite solution with different particle ratios are investigated by rheometer, and the dispersion properties of the composite solution are confirmed by relaxation NMR and Turbiscan. The mechanical properties of 3D-printed objects are measured by a tensile test and nanoindenter. To investigate the aggregation and dispersion properties of VTES-coated $ZrO_2$ ceramic particles with different particle ratios, we observe the cross-sectional images of 3D printed objects using FE-SEM. The 3D printed objects of the composite solution with nano-particles of 80 % demonstrate improved mechanical characteristics.

Transparent Conducting Zinc-Tin-Oxide Layer for Application to Blue Light Emitting-diode

  • Kim, Do-Hyeon;Kim, Gi-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.346.2-346.2
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    • 2014
  • To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

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High-Ic YBCO thick film fabricated by the MOD process (MOD 공정으로 제조된 고임계전류 YBCO 후막)

  • Shin, Geo-Myung;Song, Kyu-Jung;Moon, Seung-Hyun;Yoo, Sang-Im
    • Progress in Superconductivity and Cryogenics
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    • v.10 no.1
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    • pp.6-9
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    • 2008
  • We have investigated the MOD process successfully for the fabrication of the YBCO thick film on the $LaAlO_3$(001) single crystalline substrate. The cracking problem in YBCO thick film, a serious problem in the conventional TFA-MOD method, could be overcome with a careful control of precursor materials. Thus coating solution was prepared for the YBCO thick film by using fluorine-free precursor material. The precursor solutions were coated on the LAO(001) single crystalline substrate using the dip coating method, calcined at the temperature up to $500^{\circ}C$, and fired at various high temperatures for 2 h in a reduced oxygen atmosphere. Optimally processed YBCO thick film exhibited high critical current($I_c$) over 200 A/cm-width at 77K in self-field.

Analyses of the Output Characteristics and the Internal Impedance of Dye-sensitized Solar Cell According to the Fabrication of the Blocking Layer (Blocking layer 제작에 따른 염료감응형 태양전지 출력특성 및 내부 임피던스 분석)

  • Kim, Jin-Kyoung;Son, Min-Kyu;Kim, Soo-Kyoung;Hong, Na-Yeong;Kim, Byung-Man;Prabarkar, Prabarkar;Kim, Hee-Je
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.1
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    • pp.85-88
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    • 2012
  • DSCs are based on a dye-adsorbed porous $TiO_2$ layer as a photo electrode [1]. Under the illumination, dye molecules are excited and electrons are produced. The injected electrons in the conduction band of $TiO_2$ may recombine with the electrolyte. To obtain high performance DSCs, it is essential to retard the recombination. The charge recombination can be reduced by forming core-shell structure. In this work, we investigated the core-shell structure with $Al_2O_3$ and MgO coating layer on the porous $TiO_2$ layer. We confirmed the photovoltaic properties by I-V characteristics. The current and the efficiency was improved. In addition to, Through decrease in the width of EIS arc, which is the sum of the interfacial charge transfer resistances of both electrodes, we can be indicated that the block effect.

Electrical Properties of Al3+ and Y3+ Co-doped SnO2 Transparent Conducting Films (Al3+와 Y3+ 동시치환 SnO2 투명전극 박막의 전기적 특성)

  • Kim, Geun-Woo;Seo, Yong-Jun;Sung, Chang-Hoon;Park, Keun-Young;Cho, Ho-Je;Heo, Si-Nae;Koo, Bon-Heun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.10
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    • pp.805-810
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    • 2012
  • Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

Optimization of Alumina Tape Casting Process for Building Big Data (빅데이터 구축을 위한 알루미나 테이프 캐스팅 공정 최적화)

  • Kim, Dong Ha;Kim, Shi Yeon;Lee, Joo Sung;Yeo, Dong-Hun;Shin, Hyo-Soon;Yoon, Sang-Ok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.6
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    • pp.483-489
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    • 2019
  • For machine learning techniques, a large amount of high-quality material property data should be accumulated. In this study, several data for an alumina tape casting process were produced with the variables of slurry viscosity, gap size, and coating speed. The alumina tapes were manufactured in the range of 1,000~6,000 cps for slurry viscosity, $300{\sim}1,000{\mu}m$ for gap size, and 0.5~2.0 m/min for coating speed. As a result, the lower the viscosity, coating speed, and gap size, the more pore-free tapes could be manufactured. The viscosity of the slurry limited the minimum thickness of the tape. Green sheets with high packing density were manufactured from the slurry of 100~6,000 cps slurry viscosity, coating speed of 0.5 m/min, and a $300{\sim}500{\mu}m$ gap size.