• Korean Journal of Materials Research
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• v.4 no.1
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• pp.97-106
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• 1994

The dependence of the electrical resistivity on the eutectic composition and growth rates was investigated in the unidirectionally solidified Sb-InSb and Sn-Bi eutectic alloy systems, which were generally classified into the groups of f-f and nf-f eutectic system. Sb-InSb alloys containing 26-34wt.% In and Sn-Bi alloys containing 53-65wt.%Bi were prepared in vacuum sealed in a silica tube, and then these were unidirectionally solidified. Electrical resistivity of the specimens prepared by cutting the crystal section in parallel with the transverse direction and by cutting in longitudinal direction was measured. As the growth rate increased, the Sb-InSb and Sn-Bi eutectic alloys showed that the resistivity of longitudinal to the growth direction was increased but that of transverse to the growth direction was decreased. In the case of Sb-InSb eutectic alloy, increas~ng the phase boundary area and decreasing the fiber directionallity caused to increase the $p \; \parallel$ , while increasing the phase boundary area increased the $p \; \\perp$ As expected, the eutectic microstructure could be analysed well in terms of electrical resistivity.

• Journal of radiological science and technology
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• v.36 no.1
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• pp.39-47
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• 2013

For radiotherapy in rectal cancer patients treated with small bowel displacement device (SBDD) and belly board, We will suggest new indication of using SBDD depending on obesity index by analyzing correlation between obesity and irradiated small bowel volume. In this study, We reviewed 29 rectal cancer patients who received pelvic radiation therapy with belly board and SBDD from January to April in 2012. We only analyzed those patients treated with three-field technique (PA and both LAT) on 45 Gy (1.8 Gy/fx). We measured patients' height, weight, body mass index (BMI), waist-hip ratio (WHR) and divided BMI into two groups.(${\geq}23$:BMI=group1, <23:BMI=group2) We performed a statistical analysis to evaluate correlation between total volume of bladder($TV_{bladder}$), obesity index and high dose volume of small bowel (small bowel volume irradiated at 90% of prescribed dose, $HDV_{sb}$), low dose volume of small bowel (small bowel volume irradiated at 33% of prescribed dose, $LDV_{sb}$). The result shows, gender, WHR and status of pre operative or post operative do not greatly affect $HDV_{sb}$ and $LDV_{sb}$. Statistical result shows, there are significant correlation between $HDV_{sb}$ and BMI (p<0.04), $HDV_{sb}$ and $TV_{bladder}$ (p<0.01), $LDV_{sb}$ and $TV_{bladder}$ (p<0.01). BMI seems to correlate with $HDV_{sb}$ but does not with $LDV_{sb}$ (p>0.05). There are negative correlation between $HDV_{sb}$ and BMI, $TV_{bladder}$ and $HDV_{sb}$, $TV_{bladder}$ and $LDV_{sb}$. Especially, BMI group1 has more effective and negative correlation with $HDV_{sb}$ (p=0.027) than in BMI group2. In the case of BMI group 1, $TV_{bladder}$ has significant negative correlation with $HDV_{sb}$ and $LDV_{sb}$ (p<0.04). In conclusions, we confirmed that Using SBDD with belly board in BMI group1 could more effectively reduce irradiated small bowel volume in radiation therapy for rectal cancer. Therefore, We suggest using belly board with SBDD in order to reduce the small bowel toxicity in rectal radiotherapy, if patients' BMI is above 23.

• ETRI Journal
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• v.34 no.6
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• pp.950-953
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• 2012

Schottky barrier single electron transistors (SB-SETs) and Schottky barrier single hole transistors (SB-SHTs) are fabricated on a 20-nm thin silicon-on-insulator substrate incorporating e-beam lithography and a conventional CMOS process technique. Erbium- and platinum-silicide are used as the source and drain material for the SB-SET and SB-SHT, respectively. The manufactured SB-SET and SB-SHT show typical transistor behavior at room temperature with a high drive current of $550{\mu}A/{\mu}m$ and $-376{\mu}A/{\mu}m$, respectively. At 7 K, these devices show SET and SHT characteristics. For the SB-SHT case, the oscillation period is 0.22 V, and the estimated quantum dot size is 16.8 nm. The transconductance is $0.05{\mu}S$ and $1.2{\mu}S$ for the SB-SET and SB-SHT, respectively. In the SB-SET and SB-SHT, a high transconductance can be easily achieved as the silicided electrode eliminates a parasitic resistance. Moreover, the SB-SET and SB-SHT can be operated as a conventional field-effect transistor (FET) and SET/SHT depending on the bias conditions, which is very promising for SET/FET hybrid applications. This work is the first report on the successful operations of SET/SHT in Schottky barrier devices.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.61-64
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• 2008

Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

• Proceedings of the PSK Conference
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• 2002.10a
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• pp.233.3-234
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• 2002

SB31, an extract of Pulsatilla koreana, has been tried as an antitumor agent by traditional medicine pratitioner in Korea for the past 30 years, SB31 was evaluated for cytotoxic and antitumor activity against a variety of cancer cell lines. The SB31 exhibited 5-6 fold less cytotoxic activity against normal mononuclear cells (ED$\sub$50/. 1.1 mg/$m\ell$) than against cancer cell lines (ED$\sub$50/ 0.14-0.19mg/$m\ell$). (omitted)

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• Asian-Australasian Journal of Animal Sciences
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• v.9 no.6
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• pp.647-650
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• 1996

Fifteen sheep were used in a trial which compared the feeding value of whole barley gain and cottonseed cake as supplements to a basal diet of leaves of fourwing saltbush (Atriplex canescens). Diet SB contained 700 g (air-dry matter) of saltbush alone, diet SB + BG contained 700 g SB with 400 g whole barley grain and diet SB + CS contained 700 g SB with 400 g cottonseed cake. The digestibility of the dry matter of diets SB (69%) and SB + CS (70%) were lower (p < 0.001) than of diet SB + BG (76%). Sheep offered SB alone daily lost 80g whereas those fed the other diets gained 11 g (SB + CS) or 17 g (SB + BG) per day. Daily water consumption of the sheep offered the three diets was similar (p > 0.05), but their water consumption was higher (p < 0.001) than that of sheep offered daily 700 g wheat straw and 200 g barley grain. The results indicate that, at the levels of feeding used, barley grain and cottonseed cake had similar value as supplements to fourwing saltbush harvested in summer. The addition of the supplement allowed the sheep to gain some live weight. However, the presence of saltbush leaves in the diet resulted in higher water intakes by the sheep.

• Imaging Science in Dentistry
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• v.48 no.4
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• pp.277-281
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• 2018

Purpose: This study was performed to investigate the relationship between sleep bruxism(SB) and pulpal calcifications in young women. Materials and Methods: A total of 100 female participants between 20 and 31 years of age who were referred to our radiology clinic for a dental check-up, including 59 SB and 41 non-SB patients, were sampled for the analysis. SB was diagnosed based on the American Academy of Sleep Medicine criteria. All teeth were evaluated on digital panoramic radiographs to detect pulpal calcifications, except third molars, teeth with root canal treatment, and teeth with root resorption. Binary logistic regression analysis was used to determine the risk factors for pulpal calcifications. The Spearman correlation coefficient was applied and the Pearson chi-square test was used for categorical variables. To test intra-examiner reproducibility, Cohen kappa analysis was applied. P values <.05 were considered to indicate statistical significance. Results: A total of 2800 teeth were evaluated (1652 teeth from SB patients and 1148 from non-SB patients), and 61% of patients had at least 1 dental pulpal calcification. No statistically significant relationship was found between SB and pulpal calcifications (P>0.05). In SB patients, the total number of pulpal calcifications was 129, while in non-SB patients, it was 84. Binary logistic analysis showed that SB was not a risk factor for the presence of pulpal calcifications(odds ratio, 1.19; 95% CI, 0.52-2.69, P>.05). Conclusion: No relationship was found between SB and pulpal calcifications.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.353-356
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• 2010

InSb thin films with a thickness of approximately 300 nm were prepared using single- and double-source vacuum evaporation methods and their structures and properties were investigated in terms of a heat treatment procedure. The double-source InSb films, prepared by the alternate stacking of In and Sb, were polycrystalline in structure and included small amounts of unreacted In and Sb phases. After annealing at elevated temperatures below the melting point of InSb (525$^{\circ}C$), the films changed into the InSb phase and were found to contain small amounts of unreacted In. The formation capability of the InSb compound was slightly lower for multilayer films than for single-layer films. The electrical and galvanomagnetic properties were found to be strongly related to the microstructures of the films. The maximum value of the Hall mobility and the magnetoresistance were determined to be $4.3{\times}10^3cm^2$/Vs and 70%, respectively, for the single-layer films, while these values for the alternately stacked films were respectively $2.9{\times}10^3cm^2$/Vs and 29% for the $[Sb(2.5)/In(2.5)]_{60}$ films, and $3.1{\times}10^3cm^2$/Vs and 10% for the $[Sb(150)/In(150)]_1$ films.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.135-138
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• 2005

We investigated the electrochemical formation of a stoichiometric III-V compound semiconductor of InSb from an aqueous citric solution. Under an? optimized electrochemical condition, not like other research results, the electrodeposited InSb are satisfied exactly with the stoichiometry. Furthermore it retains the inherent characteristics of III-V compound semiconductor, InSb without heat treatment. EPMA, XPS and XRD were employed for confirmation of its composition/stoichiometry, chemical state, and crystallographic orientation, respectively.