• Journal of Sericultural and Entomological Science
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• v.31 no.1
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• pp.20-24
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• 1989

The purpose of this experiment was to obtain the basic information on heterosis and inbreeding depression of quantitative characters in the silkworm by diallel crosses of seven varieties differing widely in each character. Period of 5th instar cocoon weight, cocoon layer weight, cocoon layer ratio, boiling off ratio, raw silk percent, bave length, bave weight, bave size, weight of first molting larva and fourth molting larva were investigated. The results obtained were summarized as follows : The degrees of positive heterosis of cocoon weight and cocoon layer weight were higher. Period of 5th instar and boiling off ratio were negative heterosis. In F1 generation, cocoon weight and bave weight showed positive heterobeltiosis, while fifth instar-period, cocoon layer ratio and boiling off ratio showed negative heterobeltiosis in the F1 and F2 generation. Inbreeding depression was observed in cocoon layer ratio and boiling off ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.149-150
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• 2007

ONO(Oxide-Nitride-Oxide)구조는 기억소자의 전하보유 능력을 향상시키기 위해 도입된 게이트 절연막이다. 본 연구에서는 ELA(Excimer Laser Annealing)방법으로 비정질 실리콘을 결정화 시켜서 그 위에 NVM(Nonvolatile Memory)소자를 만들어 전기적 특성을 측정하여 결과를 나타내었다. 실험 결과 같은 크기의 $V_D$에서 $V_G$를 조절함으로써 $I_D$의 크기를 조절할 수 있었다. $V_G-I_D$ Graph에서는 $I_{on}$과 $I_{off}$, 그리고 Threshold Voltage를 알 수 있었다. $I_{on}/I_{off}$ Ratio는 $10^3-10^4$이다. $V_G-I_D$ Graph에서는 게이트에 인가하는 Bias의 양을 통해서 Threshold Voltage의 크기를 조절할 수 있었다. 이는 Trap되는 Charge의 양을 임의로 조절할 수 있다는 것을 의미하며, 이러한 Programming과 Erasing의 특성을 이용하여 기억소자로서의 역할을 수행하게 된다.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• Journal of Korean Society of Water and Wastewater
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• v.25 no.3
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• pp.407-417
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• 2011

Nowadays, the high land use, mainly used for urbanization, is affecting runoff loads of non-point pollutants to increase. According to this fact, increasing runoff loads seems like to appear that it contributes to high ratio of pollution loads in the whole the pollution loads and that this non-point source is the main cause of water becoming worse quality. Especially, concentrated pollutants on the impermeable roads run off to the public water bodies. Also the coefficient of runoff from roads is high with a fast velocity of runoff, which ends up with consequence that a lot of pollutants runoff happens when it is raining. Therefore it is very important project to evaluate the quantity of pollutant loads. In this study, I computed the pollutant loadings depending on time and rainfall to analyze characteristics of runoff while first flush storm water and evaluated the runoff time while first flush storm water and rainfall based on the change in curves on the graph. I also computed contribution ratio to identify its impact on water quality of stream. I realized that the management and treatment of first flush storm water effluents is very important for the management of road's non-point source pollutants because runoff loads of non-point source pollution are over the 80% of whole loads of stream. Also according to the evaluation of runoff loads of first flush storm water for SS, run off time was shown under the 30 minute and rainfall was shown under the 5mm which is less than 20% of whole rainfall. These are under 5mm which is regarded amount of first flush storm water by the Ministry of Environment and it is judged to be because run off by rainfall is very fast on impermeable roads. Also, run off time and rainfall of BOD is higher than SS. Therefore I realized that the management of non-point source should be managed and done differently depending on each material. Finally, the contribution ratio of pollutants loads by rainfall-runoff was shown SS 12.7%, BOD 12.7%, COD 15.9%, T-N 4.9%, T-P 8.9%, however, the pollutants loads flowing into the steam was shown 4.4%. This represents that the concentration of non-point pollutants is relatively higher and we should find the methodical management and should be concerned about non-point source for improvement on water quality of streams.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1336_1337
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• 2009

본 논문에서는 유기 박막 트랜지스터의 전극을 잉크젯 프린팅과 스크린 프린팅 방법을 이용하여 유기 박막 트랜지스터를 제작하였다. 전극으로 PEDOT:PSS와 Ag 잉크를 사용하였고, 게이트 절연막으로 polymethyl methacrylate (PMMA)와 poly(4-vinylphenol) (PVP)를 사용하였다. 유기물 활성층으로 pentacene을 진공 증착하였다. 잉크젯 프린팅 방법을 이용하여 제작한 유기 박막 트랜지스터는 전계이동도 (${\mu}_{FET}$) $0.068\;cm^2$/Vs, 문턱전압 ($V_{th}$) -15 V, 전류 점멸비 ($I_{on}/I_{off}$ current ratio) >$10^4$의 전기적 특성을 보였고, 스크린 인쇄 방법을 이용하여 제작한 유기 박막 트랜지스터는 전계이동도 (${\mu}_{FET}$) $0.016\;cm^2$/Vs, 문턱전압 ($V_{th}$) 6 V, 전류 점멸비 ($I_{on}/I_{off}$ current ratio) >$10^4$의 전기적 특성을 보였다. 이를 통하여 프린팅 방법을 이용한 유기 박막 트랜지스터 단일 소자 및 유기 전자 회로 제작의 가능성을 확인 하였다.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1412-1413
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• 2011

Effects of thermal annealing on electrical characteristics of thin film transistors (TFTs) using hydrogenated zinc oxide (ZnO:H) films as active channel were extensively investigated. The ZnO:H films were deposited at room temperature by RF sputtering. The device parameters of the ZnO:H-based TFTs, such as threshold voltage ($V_{th}$), subthreshold swing (S.S.), and on-off current ratio ($I_{on}/I_{off}$), were characterized in terms of the annealing temperature as well as the gas flow ratio of $H_2$/Ar.

• Journal of Korean Society for Quality Management
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• v.16 no.1
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• pp.23-31
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• 1988

This paper studies the handling of significant digits and rounding off methods in domestic industries. ANOVA tables made by six well-known big companies are selected and analyzed. There exist various mistakes in handling of significant digits and rounding off methods such as: * too many significant digits in the Sum of Squares values in comparison to the original data * too many significant digits in the variance ratio in comparison to the F table values. * no consistancy in the number of significant digits * no consideration for the number of significant digits in computations * ignoring the KS A 0021 in rounding off methods etc. Such mistakes are caused from the characteristics of the personal computers rather than the misunderstandings about the significant digits conception. A subroutine is developed for PC in BASIC language to help the handling of significant digits and rounding off.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.756-759
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• 2007

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

• Journal of IKEEE
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• v.23 no.2
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• pp.375-379
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• 2019

$ZnO-SnO_2(ZTO)$ was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1 as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors (TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick $Si_3N_4$ film grown on 100 nm-thick $SiO_2$ film was adopted as gate dielectrics. The mobility, threshold voltage, $I_{on}/I_{off}$, and interface trap density were obtained from the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on the property variation of ZTO TTFT were analyzed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.135-140
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• 2018

Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.