• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• Journal of Sensor Science and Technology
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• v.21 no.1
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• pp.1-6
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• 2012

Using a current-mode multiple reset, a current-to-voltage(I-V) converter with a wide dynamic range was produced. The converter consists of a trans-impedance amplifier(TIA), an analog-to-digital converter(ADC), and an N-bit counter. The digital output of the I-V converter is composed of higher N bits and lower bits, obtained from the N-bit counter and the ADC, respectively. For an input current that has departed from the linear region of the TIA, the counter increases its digital output, this determines a reset current which is subtracted from the input current of the I-V converter. This current-mode reset is repeated until the input current of the TIA lies in the linear region. This I-V converter is realized using 0.35 ${\mu}m$ LSI technology. It is shown that the proposed I-V converter can increase the maximum input current by a factor of $2^N$ and widen the dynamic range by $6^N$. Additionally, the I-V converter is successfully applied to a photometric sensor.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.457-460
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• 1997

The photoconductive gain mechanism in various types of hydrogenated amorphous silicon devices, such as p-i-n, n-i-n and n-i-p-i-n structures was investigated in connection with applications to radiation detection. We measured the photoconductive gain in two time scales: one for short pulses of visible light $(<1{\mu}sec)$ which simulate the transit of energetic charged particles, and the other for rather long pulses of light $(\sim1msec)$ which simulate x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of $3\sim9$ for short pulses and a few hundred for long pulses at a dark current density level of $10mA/cm^2$.

• Bulletin of the Korean Mathematical Society
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• v.35 no.3
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• pp.409-420
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• 1998

In this paper as a univesal Banach space of the separable Banach spaces we investigate the complemented Banach subspaces of $_wL_{\hat {I}}$. Also, using Peck's theorem and the properties of the envelope norm of $_wL_{\hat {I}}$ we will find a canonical basis of $l_1^n, l_\infty^n$ for each n.

• Journal of the Korean Mathematical Society
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• v.33 no.2
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• pp.413-421
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• 1996

A path g in the plane $R^2$ is the sequence of the points $(t_0, t_1, \ldots, t_n)$, with coordinates in $Z^2$. The point $t_0$ is the starting point and the point $t_n$ is the arriving point. An elementary step of g is a couple $(t_i, t_{i+1}), 0 \leq i \leq n - 1$. We denote the length of the path g by $\mid$g$\mid$ = n.

• Bulletin of the Korean Mathematical Society
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• v.41 no.2
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• pp.275-282
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• 2004

Let {$a_{ni},\;u_n\;{\leq}\;{\upsilon}_n,\;n\;{\geq}\;1$} be an arry of constants. Let {X_{ni},\;u_n\;{\leq}\;i\;{\leq}\;{\upsilon}_n,\;n\;{\geq}\;1$} be {$a_{ni}$}-uniformly integrable random variables. Weak laws for the weighted sums ${{\Sigma}_{i=u_n}}^{{\upsilon}_n}\;a_{ni}X_{ni}$ are obtained.

• Communications for Statistical Applications and Methods
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• v.6 no.1
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• pp.267-274
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• 1999

We consider a doubly stochastically perturbed dynamical system {$X_n$} generated by $X_n\Gamma_n(X_{n-1})+W_n where \Gamma_n$ is a Markov chain of random functions and $W_n$ is i.i.d. random elements. Sufficient conditions for stationarity and geometric ergodicity of $X_n$ are obtained by considering asymptotic behaviours of the associated Markov chain. Ergodic theorem and functional central limit theorem are proved.

• Bulletin of the Korean Mathematical Society
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• v.39 no.3
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• pp.471-478
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• 2002

Let $Let\eta={\eta m}m$ be an eventually constant sequence of unit vectors $\eta m$ in $C^{n}$ and let $\rho$η be the pure state on $UHF_{n}$ algebra which is defined by $\rho\eta(\upsilon_i_1....\upsilon_i_k{\upsilon_{j1}}^*...{\upsilon_{j1}}^*)={\eta_1}^{i1}...{\eta_k}^{ik}{\eta_k}^{jk}...{\eta_1}^{j1}$. We find infinitely many state extensions of $\rho\eta$ to Cuntz algebra $O_n$ using representations and unitary operators. Also, we present theirconcrete expressions.

• Journal of the Chungcheong Mathematical Society
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• v.20 no.4
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• pp.411-418
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• 2007

Let $X_1$, ${\cdots}$, $X_n$ be nondegenerate and positive independent identically distributed(i.i.d.) random variables with common absolutely continuous distribution function F(x) and $E(X^2)$ < ${\infty}$. The random variables $X_1+{\cdots}+X_n$ and $\frac{X_1+{\cdots}+X_m}{X_1+{\cdots}+X_n}$are independent for 1 $1{\leq}$ m < n if and only if $X_1$, ${\cdots}$, $X_n$ have gamma distribution.

• Journal of the Korean Statistical Society
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• v.12 no.2
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• pp.61-68
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• 1983

A parallel flats fraction for the $3^n$ factorial experiment is defined as the union of flats, ${t$\mid$At=C_i(mod 3)}, i=1,2,\cdot,f$, in EG(n,3) and is symbolically written as At=C where A is of rank r. The A matrix partitions the effects into u+1 alias sets where $u=(3^{n-r}-1)/2$. For each alias set the f flats produce an alias component permutation matrix (ACPM) with elements from $S_3$. In this paper, a detection vector of the ACPM was constructed for each combination of k or fewer two-factor interactions. Also the relationship between the detection vectors has been shown.