• Journal of the Korean Chemical Society
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• v.38 no.4
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• pp.276-282
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• 1994

Perovskite-type mixed oxides LaBO$_3$(B = Mn, Fe, Co) were prepared by citrate sol-gel method in $air(850^{\circ}C$, 24h). The oxygen stoichiometries and structures of these oxides were determined by XRD and TPR results as followings; LaMnO$_{3.16}$(a = 5.507, c = 13.329 $\AA$, hexagonal), LaFeO$_{3.17}$(a = 5.554, b = 5.555, c = 7.863 $\AA$, orthorhomibic), LaCoO$_{3.0}$(a = 5.436, c = 13.095 $\AA$, hexagonal). The temperature programmed reduction(TPR) experiments in static 300 torr H$_2$ atmosphere shows that the reduction reaction of LaBO$_3$(B = Mn, Fe, Co) proceeds into two stages, and thermal stabilities of these oxides decreased in the order of LaMnO$_3$ > LaFeO$_3$ > LaCoO$_3$. According to the kinetic analysis the lowest activation energy was obtained for LaCoO$_3$.

• Journal of Powder Materials
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• v.25 no.3
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• pp.203-207
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• 2018

Plastic pollution is threatening human health and ecosystems, resulting in one of the biggest challenges that humanity has ever faced. Therefore, this study focuses on the preparation of macroporous carbon from biowaste (MC)-supported manganese oxide ($MnO_2$) as an efficient, reusable, and robust catalyst for the recycling of poly(ethylene terephthalate) (PET) waste. As-prepared $MnO_2/MC$ composites have a hierarchical pore network and a large surface area ($376.16m^2/g$) with a narrow size distribution. $MnO_2/MC$ shows a maximum yield (98%) of bis(2-hydroxyethyl)terephthalate (BHET) after glycolysis reaction for 120 min. Furthermore, $MnO_2/MC$ can be reused at least nine times with a negligible decrease in BHET yield. Based on this remarkable catalytic performance, we expect that $MnO_2$-based heterogeneous catalysts have the potential to be introduced into the PET recycling industry.

• Corrosion Science and Technology
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• v.21 no.1
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• pp.53-61
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• 2022

Alloys of Fe-(5.3-29.8)%Mn-(1.1-1.9)%Al-(0.4-0.5)%C were oxidized at 550 ℃ to 650 ℃ for 20 h to understand effects of alloying elements on oxidation. Their oxidation resistance increased with increasing Mn level to a small extent. Their oxidation kinetics changed from parabolic to linear when Mn content was decreased and temperature was increasing. Oxide scales primarily consisted of Fe₂O₃, Mn₂O₃, and MnFe₂O₄ without any protective Al-bearing oxides. During oxidation, Fe, Mn, and a lesser amount of Al diffused outward, while oxygen diffused inward to form internal oxides. Both oxide scales and internal oxides consisted of Fe, Mn, and a small amount of Al. The oxidation of Mn and carbon transformed γ-matrix to α-matrix in the subscale. The oxidation led to the formation of relatively thick oxide scales due to inherently inferior oxidation resistance of alloys and the formation of voids and cracks due to evaporation of manganese, decarburization, and outward diffusion of cations across oxides.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.829-834
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• 2002

Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.130-137
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• 2008

$La_{0.7}Sr_{0.3}MnO_3$ films were deposited on $SiO_2$/Si and Si substrates annealed at $350^{\circ}C$ by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, $La_{0.7}Sr_{0.3}MnO_3$ thin films on $SiO_2$/Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of $La_{0.7}Sr_{0.3}MnO_3$ thin films was increased with increasing oxygen gas flow rate. The sheet resistance of $La_{0.7}Sr_{0.3}MnO_3$ thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of $La_{0.7}Sr_{0.3}MnO_3$ thin films were obtained from -2.0% to -2.2%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.506-510
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• 2012

In this study, lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics were fabricated by conventional mixed oxide method. Structural and electrical properties of lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics with the variation of sintering temperature were investigated. As results of x-ray diffraction analysis, all specimens showed a typical polycrystalline perovskite structure without presence of the second phase. Sintered density increased with an increases of sintering temperature and the specimen sintered at $1,020^{\circ}C$ showed the maximum value of 4.5 $g/cm^3$. The average grain size of the $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimen sintered at $1,020^{\circ}C$ is about 0.83 ${\mu}m$. Electromechanical coupling factor, relative dielectric constant and dielectric loss of $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimens sintered at $1,020^{\circ}C$ were 0.252, 741 and 0.043% respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.303-310
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• 2010

We fabricated $La_{0.6}Sr_{0.4}MnO_3$ thin films using radio frequency (RF) magnetron sputtering. They were grown on sapphire substrates with various deposition conditions. After the growth of the $La_{0.6}Sr_{0.4}MnO_3$ thin films, they were annealed at various temperatures to be crystallized. We successfully fabricated single phase $La_{0.6}Sr_{0.4}MnO_3$ thin films with high electrical conductivity. The room temperature resistivity was $1.5{\times}10^{-2}{\Omega}{\cdot}cm$. It can be considered that $La_{0.6}Sr_{0.4}MnO_3$ thin films are one of the feasible candidates for electrodes for integrated device applications.

• Journal of the Korean Institute of Gas
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• v.4 no.2 s.10
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• pp.27-32
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• 2000

In this study, $Mn_3O_4$ was synthesized by the different equivalent ratios using solution of $MnCL_2 {\cdot} 4H_2O$ and NaOH. We have investigated the crystal structure and surface area by XRD, BET Method, studied on the decompositon and adsorption of carbon dioxide with synthesized $Mn_3O_4$. As the results, we surveyed that main peak was $Mn_3O_4$, some Peaks were $MnO_2$ and $Mn_5O_8$ The specific surface area was ranged from $13.92m^2/g$ to $32.33m^2/g$. The decomposition of $CO_2$ was observed by the differential equivalent ratios at $450^{\circ}C$. $CO_2$ was well decomposed at equivalent ratio of 0.75. The amount of chemisorption of $CO_2$ was ranged from 2.885 to 19.628cc/g. Optimal equivalent ratio was 1.00 for the chemisorption of $CO_2$.

• Bulletin of the Korean Chemical Society
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• v.15 no.12
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• pp.1058-1064
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• 1994

Mn/In$_2O_3$ systems with a variety of Mn mol${\%}$ were prepared to investigate the effect of Mn-addition on the catalytic activity of Mn/In$_2O_3$ in the oxidative coupling of methane. The oxidative coupling of methane was examined on pure In$_2O_3$ and Mn/In$_2O_3$ catalysts by cofeeding gaseous methane and oxygen under atmospheric pressure between 650 and 830 $^{\circ}C$. Although pure In$_2O_3$ showed no C$_2$ selectivity, both the C$_2$ yield and the C$_2$ selectivity were increased by Mn-doping. The 5.1 mol${\%}$ Mn-doped In$_2O_3$ catalyst showed the best C$_2$ yield of 2.6${\%}$ with a selectivity of 19.1${\%}$. The electrical conductivities of pure and Mn-doped In$_2O_3$ systems were measured in the temperature range of 25 to 100 $^{\circ}C$ at PO$_2$'S of 1 ${\times}$ 10$^{-7}$ to 1 ${\times}$ 10 $^{-1}$ atm. The electrical conductivities were decreased with increasing Mn mol${\%}$ and PO$_2$, indicating the specimens to be n-type semiconductors. Electrons serve as the carriers and manganese can act as an electron acceptor in the specimens. Manganese ions doped in In$_2O_3$ inhibit the ionization of neutral interstitial indium or the transfer of lattice indium to interstitial sites and increase the formation of oxygen vacancy, giving rise to the increase of the concentration of active oxygen ion on the surface. It is suggested that the active oxygen species adsorbed on oxygen vacancies are responsible for the activation of methane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1056-1060
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• 2004

In this study, 0.96B $i_{0.5}$($Na_{0.84}$ $K_{0.16}$)$_{0.5}$Ti $O_3$ + 0.04SrTi $O_3$ + 0.3 wt% N $b_2$ $O_{5}$+0.2 wt% L $a_2$ $O_3$ + xwt % Mn $O_2$ were investigated as a function of the amount of Mn $O_2$ addition in order to improve dielectric and piezoelectric properties of Lead-free piezoelectric ceramics. With increasing the amount of Mn $O_2$ addition, the density, electromechanical coupling factor( $k_{p}$), piezoelectric constant( $d_{33}$, $g_{33}$) and curie temperature (Tc) showed the maximum value of 5.7 g/㎤, 38 %, 219 pC/N, 26 mVㆍm/N and 32$0^{\circ}C$ at 0.1 wt% Mn $O_2$ addition, respectively, and mechanical quality factor( $Q_{m}$ ) showed the maximum value of 158 at 0.3 wt% Mn $O_2$ addition.ddition.ion.n.