• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.97-97
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• 2009

원격 고주파 원도결합 플라즈마 증착공정을 이용하여 태양광의 반사도를 낮추고, 흡수효율을 개선할 수 있는 피라미드형 표면구조를 가지느니 투명전동성 ZnO 박막을 높은 증착속도로 증착할 수 있는 공정조건을 찾기 위하여 반응압력, $H_{2}O$/DEZn 유량비, 플라즈마 출력과 기판온도에 대하여 실험하였다. 실험결과 400$\sim$600nm/min 이상의 높은 증착속도을 얻을 수 있었으며, 넓은 공정 영역에서 안정적인 피라미드 표면 구조를 가지는 공정조건을 확보하였다. 증착된 박막의 표면구조와 물분석 결과와 공정조건과의 관계에 대한 연구 결과를 발표할 예정이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.206-206
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• 2010

정보화 기술이 급속히 발전함에 따라서 보다 많은 양의 data를 전송, 처리, 저장 하게 되면서 이를 처리 할 수 있는 대용량, 고속, 비휘발성의 차세대 메모리의 개발이 요구 되고 있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Off state)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을 가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time이 $10^5$배 이상 빠르며, 2~5V 이하의 낮은 전압에서 동작이 가능하다. 또한 구조가 간단하여 공정상의 결함을 현저히 줄일 수 있다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 저항 변화의 특징을 잘 나타내는 물질에는 $TiO_2$, $Al_2O_3$, $NiO_2$, $HfO_2$, $ZrO_2$등의 많은 전이금속산화물들이 있다. 본 연구에서는 Reactive DC-magnetron Sputtering 방법과 DC-magnetron sputter를 이용하여 Ti를 증착한 후 Oxidation 방법으로 각각 증착한 $TiO_2$박막을 사용하여 저항변화특성을 관찰하였다. $TiO_2$상부에 Atomic Layer Deposition (ALD)를 이용하여 $HfO_2$ 박막을 증착하여 표면처리를 하고, 또한 $TiO_2$에 다른 전이 금속박막 층을 추가 증착하여 저항변화 특성에 접합한 조건을 찾는 연구를 진행하였다. 하부 전극과 상부 전극 물질로는 Si 100 wafer 위에 Pt 또는 TiN을 사용하였다. 저항변화 특성을 평가하기 위해 Agilent E5270B를 이용하여 current-voltage (I-V)를 측정하였다. X-ray Diffraction (XRD)를 이용하여 증착 된 전기금속 박막 물질의 결정성을 관찰했으며, Atomic Force Microscopy (AFM)을 이용하여 증착 된 샘플의 표면을 관찰했다. SEM과 TEM을 통해서는 sample의 미세구조를 확인 하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.125-128
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• 2023

Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO₂ used as a gate oxide have occurred. In order to overcome the limitation of SiO₂, many studies have been conducted on HfO₂ that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO₂, and has an appropriate band gap. In this study, HfO₂, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO₂ thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.223-224
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• 2005

In this paper, multiple regression analysis of the electrical characteristics for $HfO_2$ thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as, the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of $HfO_2$ thin films. The input factors on the process are the substrate temperature, Ar gas flow, and $O_2$ gas flow. For statistical analysis, the design of experiments was carried out and the effect plots were used to analyze the manufacturing process. This methodology can predict the electrical characteristics of the thin film growth mechanism related to the process conditions.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1351-1352
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• 2007

$ZrO_2$ 와 $HfO_2$ 박막에 이온 주입을 거친 후 열처리 과정을 통해 Ge 나노입자를 형성시켜 MOS 커패시터를 제작하였다. C-V 곡선에서는 반시계 방향의 hysteresis가 관찰되었으며, $ZrO_2$ MOS 커패시터에서는 -9 V에서 9 V까지 전압변화를 주었을 때 3 V 정도의 메모리 윈도우가 나타남을 확인 할 수 있었다. 또한, $HfO_2$ MOS 커패시터에서는 -10 V에서 10 V까지 전압변화를 주었을 때 3.45 V의 메모리 윈도우를 관찰 할 수 있었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.160.1-160
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.240-241
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• 2005

In this paper, Latin Hypercube Sampling based the neural network model for the electrical characteristics of $HfO_2$ thin films grown by metal organic molecular beam epitaxy was investigated. The accumulation capacitance and the hysteresis index are extracted to be the main responses to examine the characteristics of $HfO_2$ thin films. X-ray diffraction was used to analyze the characteristic variation for the different process conditions. The initial weights and biases are selected by Latin Hypercube Sampling method. This modeling methodology can allow us to optimize the process recipes and improve the manufacturability.