• Korean Journal of Food Science and Technology
• /
• v.3 no.1
• /
• pp.68-77
• /
• 1971

Ninty four strains of lysine producing micro-organisms in culture broth during fermentation have been isolated from soil and other sources. From the comparison of the amounts of lysine produced, 6 strains have been selected as the potentially useful strains, and identified tentatively as Micrococcus sp. (S-16-4), Corynebactcrium sp. (S-27-12, S-281-3, CBY-4) and Brevibacterium sp. (M-6-71, F-629-2), respectively. From the further studies with Corynebacterium sp., S-27-12, its maximum yield was found to be 4mg lysine/ml of synthetic medium, consist of glucose(7.5%), urea(0.6%), $KH_2PO_4(0.2%)$, $Na_2HPO_4(0.05%)$, $MgSO_4{\cdot}7H_2O(0.03%)$, $MnSO_4{\cdot}4H_2O(0.001%)$ and $FeSO_4{\cdot}7H_2O(0.0005%)$ at pH 7.2 and $30^{\circ}C$ after 4 days.

• Journal of the Korean Ceramic Society
• /
• v.35 no.12
• /
• pp.1329-1336
• /
• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Journal of the Korean Magnetic Resonance Society
• /
• v.16 no.2
• /
• pp.111-121
• /
• 2012

The spin-lattice relaxation times, $T_1$, and spin-spin relaxation times, $T_2$, of the $^{27}Al$ and $^{87}Rb$ nuclei in $RbAl(CrO_4)_2{\cdot}2H_2O$ crystals were investigated. The presence of only one resonance line for the $^{27}Al$ nuclei indicates that the results in a dynamical averaging of the crystal electric field that produces a cubic symmetry field. The changes in the temperature dependence of $T_1$ are related to variations in the symmetry of the octahedra of water molecules surrounding $Al^+$ and $Rb^+$. The $T_1$ values for the $^{27}Al$ and $^{87}Rb$ nuclei are different due to differences in the local environments of these ions. We also compared these $^{27}Al$ and $^{87}Rb$ NMR results with those obtained for $RbAl(CrO_4)_2{\cdot}2H_2O$ crystals. The relaxation mechanisms of $RbAl(XO_4)_2{\cdot}nH_2O$ (X=Cr and S) crystals are characterized by completely different NMR behaviors.

• Journal of IKEEE
• /
• v.18 no.4
• /
• pp.447-455
• /
• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.284-284
• /
• 2011

Ion sensitive field effect transistor (ISFET)는 용액 중의 각종 이온 농도를 측정하는 반도체 이온 센서이다. ISFET는 작은 소자 크기, 견고한 구조, 즉각적인 반응속도, 기존의 CMOS공정과 호환이 가능하다는 장점이 있다. ISFET의 기본 구조는 기존의 metal oxide semiconductor field effect transistor (MOSFET)에서 고안되었으며, ISFET는 기존의 MOSFET의 게이트 전극 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다. ISFET소자의 pH 감지 메커니즘은 감지막의 표면에서 pH용액의 수소이온이 막의 표면에 속박되어 표면전위의 변화를 유발하는 것에 기인한다. 그 결과, 수소이온의 농도에 따라 ISFET의 문턱전압의 변화를 일으키게 되고 드레인 전류의 양 또한 달라지게 된다. 한편, ISFET의 좋은 pH감지특성과 높은 출력특성을 얻기 위하여 high-k물질들이 감지막으로써 지속적으로 연구되어져 왔다. 그 중 Al2O3와 HfO2는 높은 유전상수와 좋은 pH 감지능력으로 인하여 많은 연구가 이루어져온 물질이다. 하지만 HfO2는 높은 유전상수를 갖음에도 불구하고 화학용액에 대한 non-ideal 효과에 취약하다는 보고가 있다. 반면에 Al2O3의 유전상수는 HfO2보다 작지만 화학용액으로 인한 손상에 대하여 강한 immunity가 있는 재료이다. 본 연구에서는, 이러한 각각의 high-k 물질들의 단점을 보안하기 위하여 SiO2/HfO2/Al2O3(OHA) 적층막을 이용한 ISFET pH 센서를 제작하였으며 SOI 기판에서 구현되었다. SOI기판에서 OHA 적층막을 이용한 ISFET 제작이 이루어짐에 따라서 소자의 signal to noise 비율을 증대 시킬것으로 기대된다. 실제로 SOI-ISFET와 같이 제작된 SOI-MOSFET는 1.8${\times}$1010의 높은 on/off 전류 비율을을 보였으며 65 mV/dec의 subthreshold swing 값을 갖음으로써, 우수한 전기적 특성을 보이는 ISFET가 제작이 되었음을 확인 하였다. OHA 감지 적층막의 각 층은 양호한 계면상태, 높은 출력특성, 화학용액에 대한non-ideal 효과에 강한 immunity을 위하여 적층되었다. 결론적으로 SOI과 OHA 적층감지막을 이용하여 우수한 pH 감지 특성을 보이는 pH 센서가 제작되었다.

• Proceedings of the KIEE Conference
• /
• 1991.07a
• /
• pp.204-208
• /
• 1991

In this paper, the radiation properties of a far-Infrared using a PTC thermistor, the $BaTiO_3$+1.63mol% $Al_2O_3$+3.75mol% $SiO_2$+1.25mol% $TiO_2$(1/3 $Al_2O_3+xSiO_2$+(1-x) $TiO_2$; total x: 6.67mol%) ceramics, in order to progress the grade resistivity characteristics, by adding an ethanol solution of $Mn(NO_3){\cdot}6H_2O$ was investigated. The ceramics was fabricated by wet-mill method. The sintering temperature read 1300-1350$[^{\circ}C]$ and the holding time was 3 hours. The quantity of $Sb_2O_3$ and $Al_2O_3$ for an activation of the far-infrared radiation in ceramics was doped. In sintering, R-T property was measured by varying the grade temperature. The anatase-lighting apparatus and microstructures by using XRD and SEM were observed. $Sb_2O_3$. oxides additive. affected the semiconducting and emissivity and MnO was devoted an increase of resistivity. The specimen which only $Sb_2O_3$ is added to was high appeared far-infrared emissivity and Mno was not affacted the far-infrared radiation. The ceramics shows that it is effective in the structure of the human bodies as organic bodies and can be applied as electron device.

• Environmental Engineering Research
• /
• v.17 no.4
• /
• pp.205-210
• /
• 2012

Hydroperoxyl radical/superoxide anion radical ($HO_2{\cdot}/O_2^-{\cdot}$, $pK_a$=4.8) as an intermediate is of considerable importance in oxidation processes. Hence, the method of detecting $HO_2{\cdot}/O_2^-{\cdot}$ with high sensitivity is necessary to be developed. To achieve this objective, this study newly employed terephthalate (TA) as a probe for the measurement of $HO_2{\cdot}/O_2^-{\cdot}$ in the kinetic method presented in our previous study. This method was based on the hydroxylation of TA to produce mainly hydroxyterephthalic acid or hydroxyterephthalate (OHTA), which was analyzed by fluorescence detection (${\lambda}_{ex}$=315nm, ${\lambda}_{ex}$=425nm). The life-time of $HO_2{\cdot}/O_2^-{\cdot}$ and its concentration formed from the photolysis technique of $H_2O_2$ were reported in this study. At range of pH 2-10, the life-time of $HO_2{\cdot}/O_2^-{\cdot}$ was 51-422 sec. In particular, an increase in the life-time with pH was observed. The sensitivities of the kinetic method by using TA were always higher with 1.7-2.5 times at pH 8.0 than those by using benzoic acid. From these results, this study can contribute to understanding the basic functions of $HO_2{\cdot}/O_2^-{\cdot}$ in oxidation processes.

• Korean Journal of Materials Research
• /
• v.6 no.7
• /
• pp.716-722
• /
• 1996

Effect of Film thickness on the sensing behavior of thin-film-type ags sensor has been analyzed by deriving an equation form a simple model, and the equation was applied to the sensing behavior of ${SnO}_{2}$ and CuO-${SnO}_{2}$ thin-film sensors. It was revealed, from the equation,that the gas sensing property was closely related to gas diffusivity into the film which was a function of film thickness, reactivity of the gas detected with sensing material, operating temperature, etc. The equation derived was well consistent with the experimental results from ${SnO}_{2}$ and CuO-${SnO}_{2}$ thin-film sensors and explained their different ${H}_{2}S$ sensing behaviors. Finally, a medel was suggested, explainning the effect of gas diffusivity on sensing be havior of oxide semiconductor sensor.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.244-245
• /
• 2015

PEALD TiN 금속 전극을 갖는 MOS device에서 SC1 ($NH_4/H_2O_2/H_2O=1:2:5$), SPM ($H_2SO_4/H_2O_2=10:1$), $H_2O_2$ etch chemical을 이용해 TiN 식각 후 oxide 표면 잔류 Ti에 의한 전기적 특성 분석을 진행 하였다. Etch chemical 중 SPM을 이용한 소자의 전기적 특성이 우수하였는데, 이는 잔류Ti atom의 양이 다른 etch chemical을 사용한 것 대비 낮았기 때문이다. 이로 인하여 낮은 leakage current, less frequency dependence의 특성이 관찰되었다. 또한, 후속 열처리를 통해 더욱 우수한 특성이 관찰 되었다. 이러한 공정기술은 single 전극을 갖는 CMOS 형성 시 사용 될 수 있을 것으로 기대된다.

• Journal of the Korean Ceramic Society
• /
• v.32 no.9
• /
• pp.1076-1084
• /
• 1995

A mixture of aluminum isopropoxide (Al(OC3H7i)3) solution and sodium hydroxide (NaOH) solution was hydrolyzed in the range between pH 1~14. the powder obtained from sol-gel process was calcined at several temperatures and crystallization behaviors of various samples were investigated. The hydrolyzed sols of pH 1~6 wre clear, or near clear. On the other hand, powder precipitated from sols of pH 7~14. The sample obtained from pH 3 solution crystallized via complicated route, and $\beta$-Al2O3 and $\beta$"-Al2O3 phases appeared at lower temperature than samples from other pH conditions. And the quantity of remained $\beta$"-Al2O3 phase after heat treatment at 150$0^{\circ}C$ was more than samples from other pH conditions. After sintering, ionic conductivities were 1.3$\times$10-4S.cm-1 to 0.76$\times$10-4S.cm-1.0-4S.cm-1.