• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.193-197
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• 2005

CuO has been synthesized using the layered organic-inorganic hybrids, $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$ as precursor. The simple thermal decomposition of $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$ is used without any external organic templates. This method provides large-scale production at a low cost of the single-crystalline CuO particles. The morphology of CuO aggregated particles is strongly dependent on structure of the precursor.

• Bulletin of the Korean Chemical Society
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• v.11 no.4
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• pp.318-323
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• 1990

The bis(malonato)diaquochromate(III) ion, $Cr(C_3H_2O_4)_2^-$ in acidic solution hydrolyzes to give $Cr(C_3H_2O_4)^{+}.$ This reaction is catalyzed by ferric ion and the rate law for this cation catalyzed-aquation in a $HClO_4/NaClO_4$ medium, $I = 1.00 M, is-d[Cr(C_3H_2O_4)_2^-]/dt = ({\kappa}_1[Fe^{3+}] + {\kappa}_2[H^+])[Cr(C_3H_2O_4)_2^-]$ where ${\kappa}_1(25^{\circ}C) = 4.72×10^{-5} M^{-1}sec^{-1} ({\Delta}H^{\neq} = 22.5 Kcal/mol, {\Delta}S^{\neq} = - 2.58 eu) and {\kappa}_2(25^{\circ}C) = 4.75{\times}10^{-5} M^{-1}sec^{-1} ({\Delta}H^{\neq} = 21.2 Kcal/mol, {\Delta}S^{\neq} = - 7.13 eu).$ Rapid preequilibrium association of basic Cr-bound oxygen with $Fe^{3+},$ followed by rate-determining ring opening, is proposed to account for the ${\kappa}_1,$ hydrolysis pathway.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.309-315
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• 1982

$FeAl_2O_4$ was formed from the starting material of $Fe_2O_3$ and $Al_2O_3$ by controlling the oxygen partial pressure using $H_2-CO_2$ gas mixture, over the temperature range of 800~120$0^{\circ}C$. The formation mechanism of $FeAl_2O_4$ was found to be a second order chemical reaction, and the activation energy of formation was observed as 39.97 kcal/mole. Vaporization behavior of $FeAl_2O_4$ under $CO_2$ atmosphere was observed over the temperature range of 800~120$0^{\circ}C$. $FeAl_2O_4$ was vaporized by a second order chemical reaction and the activation energy was found to be 21.8kcal/mole. Electrical conductivity of $FeAl_2O_4$ was also measured.

• Korean Journal of Crystallography
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• v.15 no.2
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• pp.93-98
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• 2004

The structure of C_{28}H_{41}N_4O_4Br\;{\cdot}\;2H_2O$ has been determined by X-ray deffraction methods. The crystal system is triclinic, space group Pl, unit cell constants, a=9.000(1) $\AA$, b=9.312(3) $\AA$, c=9.344(2) $\AA$, $\alpha=89.37(20)^{\circ},\;\beta=68.81(3)^{\circ},\;\gamma=84.70(4)^{\circ},\;V=726.7(8){\AA},\;T=298K,\;Z=1,\;D_c=1.402Mgm^{-3}$. The intensity data were collected on an Enraf-Nonius CAD4 Diffractometer with graphite monochromated $MoK\alpha$ radiation $(\lambda=0.71073\;{\AA}$. The molecular structure was solved by direct methods and refined by full-matrix least squares to a final $R=5.95\%$ for 2521 unique observed $F_0>4\sigma(F_0)$reflections and 370 parameters.

• Journal of the Korean Chemical Society
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• v.46 no.3
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• pp.179-186
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• 2002

A molecular orbital analysis based on the extended Huckel calculations has been carried out to study the OH bond activation of water on the $TiO_2$(110) surface. $H_2O$ binds with its axis perpendicular to the surfac on top of the five-coordinate $Ti^{4+}$ atom via its $3a_1$ orbital. In this bonding situation, the two-coordinated bridging $O^{2-}$ atom ($O_b$, basic site) on $TiO_2$(110) is too distant from an H atom of water to form hydrogen-bondig interactions with water that facilitate O-H bond cleavage. It has been elucidated that the O-H bond is appreciably weakened when the water molecule is tilted to give a hydrogen bond with the $O_b$ atom. This mechanism includes mutual transfer of electron density from the $3a_1$ orbital of the water molecule to the $Ti^{4+} 3d_{z2}$ orbital and from the $O_b$ P orbitals to the $2b_1$ of the adsorbed water molecule This should result in lengthening of the O-H bond in the surface complex and the subsequent dissociation into the fragments OH and H.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.6
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• pp.27-33
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• 2008

Given a polynomial ${\hbar}(x){\in}F_q[x]$ of degree h, it is an important problem to determine the size of multiplicative subgroup of $\(F_q[x]/({\hbar(x))\)*$ generated by $x-s_1,\;x-s_2,\;{\cdots},\;x-s_n$, where $\{s_1,\;s_2,\;{\cdots},\;s_n\}{\sebseteq}F_q$, and for all ${\hbar}(x){\neq}0$. So far the best known asymptotic lower bound is $(rh)^{O(1)}\(2er+O(\frac{1}{r})\)^h$, where $r=\frac{n}{h}$ and e(=2.718...) is the base of natural logarithm. In this paper, we exploit the coding theory connection of this problem and prove a better lower bound $(rh)^{O(1)}\(2er+{\frac{e}{2}}{\log}r-{\frac{e}{2}}{\log}{\frac{e}{2}}+O{(\frac{{\log}^2r}{r})}\)^h$, where log stands for natural logarithm We also discuss about the limitation of this approach.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Korean Journal of Materials Research
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• v.23 no.2
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• pp.128-134
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• 2013

A study on the corrosion behavior of Inconel alloys and Incoloy 800H in molten salt of LiCl-$Li_2O$ was investigated at $650^{\circ}C$ for 24-312 hours in an oxidation atmosphere. The order of the corrosion rate was Inconel 600 < Inconel 601 < Incoloy 800H < Inconel 690. Inconel 600 showed the best performance suggesting that the content of Fe, Cr and Ni are the important factor for corrosion resistance in hot molten salt oxidation conditions. The corrosion products of Inconel 600 and Inconel 601 were $Cr_2O_3$ and $NiFe_2O_4$, In case of Inconel 690, a single layer of $Cr_2O_3$ was formed in the early stage of corrosion and an outer layer of $NiFe_2O_4$ and inner layer of $Cr_2O_3$ were formed with an increase of corrosion time. In the case of Incoloy 800H, $Cr_2O_3$ and $FeCr_2O_4$ were observed. Most of the outer scale of the alloys was observed to be spalled from the results of the SEM analysis and the unspalled scale which adhered to the substrate was composed of three layers. The outer layer, the middle one, and the inner one were Fe, Cr, and Ni-rich, respectively. Inconel 600 showed localized corrosion behavior and Inconel 601, 690 and Incoloy 800H showed uniform corrosion behavior. Ni improves the corrosion resistance and too much Cr and/or Fe content deteriorates the corrosion resistance.

• Korean Journal of Materials Research
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• v.34 no.8
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• pp.387-394
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• 2024

Transition metal oxide-based materials have mainly been studied as electrodes for energy storage devices designed to meet essential energy demands. Among transition metal oxide-based materials, hydrated vanadium pentoxide (V₂O₅·nH₂O), a vanadium oxide material, has demonstrated great electrochemical performance in the electrodes of energy storage devices. Graphene oxide (GO), a carbon-based material with high surface area and high electrical conductivity, has been added to V₂O₅·nH₂O to compensate for its low electrical conductivity and structural instability. Here, V₂O₅·nH₂O/GO nanobelts are manufactured with water without adding acid to ensure that the GO is uniformly dispersed, using a microwave-assisted hydrothermal synthesis. The resulting V₂O₅·nH₂O/GO nanobelts exhibited a high specific capacitance of 206 F/g and more stable cycling performance than V₂O₅·nH₂O without GO. The drying conditions of the carbon paper electrodes also resulted in more stable cycling performance when conducted at high vacuum and high temperature, compared with low vacuum and room temperature conditions. The improvement in electrochemical performance due to the addition of GO and the drying conditions of carbon paper electrodes indicate their great potential value as electrodes in energy storage devices.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.183-188
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• 2002

In the present study AI$(CH_3)_3)$films were deposited by the ALD technique using trimethylaluminum(TMA) and ozone to improve the quality of the AI$(CH_3)_3)$ films, since the $OH^-$ radicals existing in the AI$(CH_3)_3)$ films deposited using TMA and $H_2O$ degrade the physical and the dielectric properties of the AI$(CH_3)_3)$ film. The XPS analysis results indicate that the $OH^-$ radical concentration in the AI$(CH_3)_3)$film deposited using $O_3$is lower than that using $H_2O$. The etch rate of the AI$(CH_3)_3)$film deposited using $O_3$is also lower than that using $H_2O$, suggesting that the chemical inertness of the former is better than the latter. The MIS capacitor fabricated with the TiN conductor and the $Al_2$O$_3$dielectrics formed using $O_3$offers lower leakage current, better insulating property and smaller flat band voltage shift $({\Delta}V_{FB})$.