• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.621-624
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• 2002

In this study, outgassing characteristics of MgO films, and the plasma cleaning effects of the deposited MgO films by atmospheric pressure plasma on outgassing rate were compared. The MgO layer was heated up to 350 $^{\circ}C$ and the outgassing characteristics were observed for the heated conditions. As the main impurity species $H_2,\;H_2O,\;N_2,\;CO_2,\;and\;H_2O$ were released from this panel. Impurity species of plasma treatment panel were lower than non-treated panels for the heating temperature

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.174-177
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• 1991

Fluorine-doped $SnO_2\;(SnO_2:F)$ films were prepared in ordinary atmosphere on borosilicate glass substrates using pyrosol deposition method starting from the solutions composed of $SnCl_4-5H_2O-NH_4F-CH_3OH-H_2O-HCl$ in an attempt to develop transparent conductors for use in amorphous silicon (a-Si) solar cello. The deposition rate of films increased with the increase in the content of $H_2O$, whereas it decreased with increasing the content of $CH_3OH$. When air was used as the carrier gas, the lowest electrical resistivity was obtained from a solution having $CH_3OH/H_2O$ mol ratio of about $2{\sim}3$ in the solution. The use of $N_2$ of the same flow rate as the carrier gab resulted always in the high resistive films, but the resistivity of the films decreased continuously with the increase in the content of $H_2O$. The surface morphology and preferred orientation of films were also affected by the solvent composition and the content of HCl in the solution. The room-temperature resistance of the films were fairly stable after heat-treatments up to $600^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1054-1058
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• 1993

The effects of TiO2 addition as a nucleating agent on the cordierite glass-ceramics were investigated. The glass compositiion was stoichiometric cordierite composition of 13.7MgO-34.9Al2O3-51.4SiO2(wt%), and TiO2 as a nucleating agent was added by 5, 10 and 15wt% in addition. The optimum amount of TiO2 addition and appropriate heat treatment schedule were determined by using dilatometer, DTA, XRDA and SEM. The composition containing 10wt% TiO2 was proved to be the best among the investigated compositions. And the optimum heat treatment schedule was 840℃-2h for the nucleation and 1140℃-2h for the crystallization. The properties were as follows. The crystallinity was ∼75%, thermal expansion coefficient 33×10-7/℃(25∼700℃), dielectric constant 7.6(1KHz) and Vicker's hardness 5.1GPa.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.426-428
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• 1989

As a first phase of plasma study intended for semiconductor processing research, we have studied the discharge phenomena. In particular, we have obtained a specific formula for the breakdown voltage as a function of the neutral state pressure of reactive gases. Our experimental results with H2,O2,Ar,CF4 seem ro verify this formula. In addition we find the voltage levels for various gases in the descending order of CF4>O2=Ar>H2 in high pressure region, while H2>CF4>O2>Ar in low pressure region. When H2 and CF4 were mixed, we observe the overall voltage dominated by the gas with lower breakdown volotage.

• Journal of Surface Science and Engineering
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• v.48 no.3
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• pp.110-114
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• 2015

The effect of hot-dip aluminizing on the corrosion of the low carbon steel was studied at $650-850^{\circ}C$ for 20-50 h in $N_2/0.5%\;H_2S$ gas. The aluminized steel consisted primarily of the Al topcoat and the underlying Al-Fe alloy layer. Aluminizing drastically improved the corrosion resistance by forming the ${\alpha}-Al_2O_3$ surface scale. Without aluminizing, the steel formed nonadherent, fragile, thick scales, which consisted of FeS as the major phase and iron oxides such as FeO, $Fe_3O_4$ and $Fe_2O_3$ as minor ones.

• Bulletin of the Korean Chemical Society
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• v.18 no.3
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• pp.324-327
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• 1997

Water soluble iridium complex, IrCl(CO)(TPPTS)2·χH2O (1) (TPPTS=m-trisulfonated triphenylphosphine) has been prepared from the reaction of a water soluble complex, IrCl(COD)(TPPTS)2·6H2O (COD=l,5-cyclooctadiene) with CO and unambiguously characterized by electronic absorption, 31P NMR, 13C NMR and IR spectral data. Complex 1 catalyzes the hydration of terminal alkynes to give ketones in aqueous solutions at room temperature. The rate of PhC≡CH hydration dramatically increases with addition of MeOH to the reaction mixture in H2O, which is understood in terms of i) the excellent miscibility between H2O and MeOH and ii) the assumed catalytic hydration pathway involving the initial formation of (alkyne)IrCl(CO)(TPPTS)2.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.478-481
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• 2000

Single phase $Pb(Mg_{1/3}Nb_{2/3})O_3$ ceramics doped by 10 mol% of electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, were synthesized and their B-site cationic ordering structures were investigated by XRD and TEM. In the XRD patterns, only fundamental reflections were observed for the undoped $Pb(Mg_{1/3}Nb_{2/3})O_3$, while the (h/2 $\textsc{k}$/2ι/2)(h,$\textsc{k}$,ι all odd) superlattice reflections resulting from the 1:1 ordering induced unit cell doubling were also observed for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. In the TEM selected area diffraction patterns, the (h/2 k/2 l/2)(h,k,l all odd) superlattice reflection spots as well as the fundamental reflection spots were observed for all the samples, but the relative intensities of the superlattice reflection spots to the fundamental reflection spots were significantly enhanced by the donor-doping. In the TEM dark-field images, antiphase boundaries were observed only for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. It was therefore experimentally verified that doping by electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, enhances the B-site cationic 1:1 ordering in $Pb(Mg_{1/3}Nb_{2/3})O_3$. These experimental results were interpreted in terms of the charge compensation mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of Pharmacopuncture
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• v.5 no.2
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• pp.52-62
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• 2002

Objectives : The purpose of this study was to investigate the effects of Bee Venom on NO, $H_2O_2$ expression induced by LPS in Raw 264.7 cells as a murine marcrophage cell line and on IL-1 expression induced by LPS in D10S cells. Methods : The expression of NO was measured by MTT Assay and IL-1 by MTS Assay. The expression of $H_2O_2$ was measured as ROS level within the cell using by FACS analysis. The non-toxic concentration(from $0.1\;{\mu}g/ml\;to\;5\;{\mu}g/ml$) of Bee Venom was determined by MTT Assay. Results : 1. Bee Venom inhibited the NO expression. The effective concentration of Bee Venom was $5\;{\mu}g/ml$ after 3 hours, 1 and $5\;{\mu}g/ml$ after 1 day and 2 days. The all concentration of Bee Venom inhibited the NO expression after 6, 12 hours and 3 days. 2. Bee Venom inhibited the $H_2O_2$ expression in a dose-dependent manner compared to the control. 3. Bee Venom could not significantly inhibit the IL-1 expression.